CN103887287B - 半导体装置和半导体装置的制造方法 - Google Patents

半导体装置和半导体装置的制造方法 Download PDF

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Publication number
CN103887287B
CN103887287B CN201310712188.8A CN201310712188A CN103887287B CN 103887287 B CN103887287 B CN 103887287B CN 201310712188 A CN201310712188 A CN 201310712188A CN 103887287 B CN103887287 B CN 103887287B
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Prior art keywords
insulating film
film
main surface
semiconductor device
wiring
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Expired - Fee Related
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Chinese (zh)
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CN103887287A (zh
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船矢琢央
鴫原宏美
鴫原久雄
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Renesas Electronics Corp
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Renesas Electronics Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07553—Controlling the environment, e.g. atmosphere composition or temperature changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/537—Multiple bond wires having different shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacturing & Machinery (AREA)
  • Coils Or Transformers For Communication (AREA)
CN201310712188.8A 2012-12-21 2013-12-20 半导体装置和半导体装置的制造方法 Expired - Fee Related CN103887287B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012279843A JP6091206B2 (ja) 2012-12-21 2012-12-21 半導体装置および半導体装置の製造方法
JP2012-279843 2012-12-21

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CN103887287A CN103887287A (zh) 2014-06-25
CN103887287B true CN103887287B (zh) 2019-04-09

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US (4) US8987861B2 (enExample)
JP (1) JP6091206B2 (enExample)
CN (1) CN103887287B (enExample)
HK (1) HK1198303A1 (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8994494B2 (en) 2008-10-10 2015-03-31 Polaris Industries Inc. Vehicle security system
US9162558B2 (en) 2009-06-15 2015-10-20 Polaris Industries Inc. Electric vehicle
US8517136B2 (en) 2010-04-06 2013-08-27 Polaris Industries Inc. Vehicle
WO2012138991A2 (en) 2011-04-08 2012-10-11 Polaris Industries Inc. Electric vehicle with range extender
CN102832189B (zh) * 2012-09-11 2014-07-16 矽力杰半导体技术(杭州)有限公司 一种多芯片封装结构及其封装方法
US9929038B2 (en) 2013-03-07 2018-03-27 Analog Devices Global Insulating structure, a method of forming an insulating structure, and a chip scale isolator including such an insulating structure
US9653396B2 (en) * 2013-03-25 2017-05-16 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
JP6395304B2 (ja) 2013-11-13 2018-09-26 ローム株式会社 半導体装置および半導体モジュール
CN104810244B (zh) * 2014-01-26 2018-12-18 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法、半导体器件和电子装置
JP6402978B2 (ja) * 2014-07-25 2018-10-10 セイコーエプソン株式会社 半導体回路素子、電子機器、および移動体
US10236265B2 (en) 2014-07-28 2019-03-19 Infineon Technologies Ag Semiconductor chip and method for forming a chip pad
JP6434763B2 (ja) * 2014-09-29 2018-12-05 ルネサスエレクトロニクス株式会社 半導体装置
DE102014117510A1 (de) 2014-11-28 2016-06-02 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
CN105789108B (zh) * 2014-12-16 2019-02-12 中芯国际集成电路制造(上海)有限公司 功率晶体管芯片的制作方法及功率晶体管芯片
JP6589277B2 (ja) * 2015-01-14 2019-10-16 富士電機株式会社 高耐圧受動素子および高耐圧受動素子の製造方法
JP6724308B2 (ja) * 2015-08-07 2020-07-15 セイコーエプソン株式会社 発振モジュール、振動デバイス、電子機器、および移動体
JP2017045864A (ja) * 2015-08-26 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US20180261467A1 (en) * 2015-10-01 2018-09-13 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
US9941565B2 (en) 2015-10-23 2018-04-10 Analog Devices Global Isolator and method of forming an isolator
US10204732B2 (en) 2015-10-23 2019-02-12 Analog Devices Global Dielectric stack, an isolator device and method of forming an isolator device
JP2017098334A (ja) * 2015-11-19 2017-06-01 ルネサスエレクトロニクス株式会社 半導体装置
JP2018182223A (ja) * 2017-04-20 2018-11-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6819564B2 (ja) * 2017-12-19 2021-01-27 三菱電機株式会社 半導体装置およびその製造方法
DE102019122844B4 (de) 2018-08-29 2024-07-25 Analog Devices International Unlimited Company Back-to-Back-Isolationsschaltung
CN109326571B (zh) * 2018-09-26 2020-12-29 矽力杰半导体技术(杭州)有限公司 芯片封装组件及其制造方法
JP2020088200A (ja) * 2018-11-27 2020-06-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US11450469B2 (en) 2019-08-28 2022-09-20 Analog Devices Global Unlimited Company Insulation jacket for top coil of an isolated transformer
US11716117B2 (en) * 2020-02-14 2023-08-01 Texas Instruments Incorporated Circuit support structure with integrated isolation circuitry
JP7332775B2 (ja) * 2020-03-19 2023-08-23 株式会社東芝 アイソレータ
JP7284121B2 (ja) * 2020-03-23 2023-05-30 株式会社東芝 アイソレータ
JP2021174955A (ja) * 2020-04-30 2021-11-01 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
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US11887948B2 (en) * 2021-08-02 2024-01-30 Stmicroelectronics S.R.L. Integrated circuit chip including a passivation nitride layer in contact with a high voltage bonding pad and method of making
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JP7615073B2 (ja) * 2022-02-25 2025-01-16 三菱電機株式会社 トランス素子、半導体装置、トランス素子の製造方法、および半導体装置の製造方法
US20240113094A1 (en) * 2022-09-30 2024-04-04 Texas Instruments Incorporated Galvanic isolation device
WO2024072851A1 (en) * 2022-09-30 2024-04-04 Texas Instruments Incorporated Micro device with shear pad

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5170302A (en) * 1990-05-07 1992-12-08 Mitsubishi Denki Kabushiki Kaisha Thin-film magnetic head with multiple interconnected coil layers
US5969911A (en) * 1997-03-06 1999-10-19 Read-Rite Smi Corporation Inductive/MR composite type thin-film magnetic head
CN1866467A (zh) * 2005-05-18 2006-11-22 米辑电子股份有限公司 一种线路元件的制作方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629662A (ja) * 1992-07-10 1994-02-04 Toray Ind Inc 多層配線構成体およびポリイミド系絶縁膜のパターン加工方法
JP3420703B2 (ja) * 1998-07-16 2003-06-30 株式会社東芝 半導体装置の製造方法
JP3408172B2 (ja) * 1998-12-10 2003-05-19 三洋電機株式会社 チップサイズパッケージ及びその製造方法
US6483662B1 (en) * 1999-07-09 2002-11-19 Read-Rite Corporation High density multi-coil magnetic write head having a reduced yoke length and short flux rise time
JP2005150329A (ja) * 2003-11-14 2005-06-09 Canon Inc 配線構造及びその作製方法
JP2009212332A (ja) * 2008-03-05 2009-09-17 Nec Electronics Corp 半導体装置及びその製造方法
JP2009267215A (ja) * 2008-04-28 2009-11-12 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
JP2009302268A (ja) * 2008-06-13 2009-12-24 Toyota Central R&D Labs Inc トランス素子が形成されている半導体装置とその製造方法
JP2009302418A (ja) 2008-06-17 2009-12-24 Nec Electronics Corp 回路装置及びその製造方法
KR101548777B1 (ko) * 2011-12-19 2015-09-01 삼성전기주식회사 노이즈 제거 필터
US9653396B2 (en) * 2013-03-25 2017-05-16 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
EP3101685B1 (en) * 2014-01-29 2020-01-01 Renesas Electronics Corporation Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5170302A (en) * 1990-05-07 1992-12-08 Mitsubishi Denki Kabushiki Kaisha Thin-film magnetic head with multiple interconnected coil layers
US5969911A (en) * 1997-03-06 1999-10-19 Read-Rite Smi Corporation Inductive/MR composite type thin-film magnetic head
CN1866467A (zh) * 2005-05-18 2006-11-22 米辑电子股份有限公司 一种线路元件的制作方法

Also Published As

Publication number Publication date
JP2014123671A (ja) 2014-07-03
CN103887287A (zh) 2014-06-25
US9818815B2 (en) 2017-11-14
US8987861B2 (en) 2015-03-24
US20180069073A1 (en) 2018-03-08
JP6091206B2 (ja) 2017-03-08
US10157974B2 (en) 2018-12-18
US20140175602A1 (en) 2014-06-26
HK1198303A1 (en) 2015-03-27
US9219108B2 (en) 2015-12-22
US20150162395A1 (en) 2015-06-11
US20160087025A1 (en) 2016-03-24

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