CN103887287B - 半导体装置和半导体装置的制造方法 - Google Patents

半导体装置和半导体装置的制造方法 Download PDF

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Publication number
CN103887287B
CN103887287B CN201310712188.8A CN201310712188A CN103887287B CN 103887287 B CN103887287 B CN 103887287B CN 201310712188 A CN201310712188 A CN 201310712188A CN 103887287 B CN103887287 B CN 103887287B
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Prior art keywords
insulating film
film
main surface
semiconductor device
wiring
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Expired - Fee Related
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Chinese (zh)
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CN103887287A (zh
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船矢琢央
鴫原宏美
鴫原久雄
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Renesas Electronics Corp
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Renesas Electronics Corp
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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CN201310712188.8A 2012-12-21 2013-12-20 半导体装置和半导体装置的制造方法 Expired - Fee Related CN103887287B (zh)

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JP2012279843A JP6091206B2 (ja) 2012-12-21 2012-12-21 半導体装置および半導体装置の製造方法
JP2012-279843 2012-12-21

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CN102832189B (zh) * 2012-09-11 2014-07-16 矽力杰半导体技术(杭州)有限公司 一种多芯片封装结构及其封装方法
US9929038B2 (en) 2013-03-07 2018-03-27 Analog Devices Global Insulating structure, a method of forming an insulating structure, and a chip scale isolator including such an insulating structure
US9653396B2 (en) * 2013-03-25 2017-05-16 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
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