HK1198303A1 - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same Download PDF

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Publication number
HK1198303A1
HK1198303A1 HK14111822.5A HK14111822A HK1198303A1 HK 1198303 A1 HK1198303 A1 HK 1198303A1 HK 14111822 A HK14111822 A HK 14111822A HK 1198303 A1 HK1198303 A1 HK 1198303A1
Authority
HK
Hong Kong
Prior art keywords
insulating film
film
semiconductor device
region
forming
Prior art date
Application number
HK14111822.5A
Other languages
English (en)
Chinese (zh)
Inventor
Funaya Takuo
Shigihara Hiromi
Shigihara Hisao
Original Assignee
瑞萨电子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 瑞萨电子株式会社 filed Critical 瑞萨电子株式会社
Publication of HK1198303A1 publication Critical patent/HK1198303A1/xx

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07553—Controlling the environment, e.g. atmosphere composition or temperature changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/537—Multiple bond wires having different shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacturing & Machinery (AREA)
  • Coils Or Transformers For Communication (AREA)
HK14111822.5A 2012-12-21 2014-11-21 Semiconductor device and method of manufacturing the same HK1198303A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012279843A JP6091206B2 (ja) 2012-12-21 2012-12-21 半導体装置および半導体装置の製造方法
JP2012-279843 2012-12-21

Publications (1)

Publication Number Publication Date
HK1198303A1 true HK1198303A1 (en) 2015-03-27

Family

ID=50956112

Family Applications (1)

Application Number Title Priority Date Filing Date
HK14111822.5A HK1198303A1 (en) 2012-12-21 2014-11-21 Semiconductor device and method of manufacturing the same

Country Status (4)

Country Link
US (4) US8987861B2 (enExample)
JP (1) JP6091206B2 (enExample)
CN (1) CN103887287B (enExample)
HK (1) HK1198303A1 (enExample)

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US9653396B2 (en) * 2013-03-25 2017-05-16 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
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CN104810244B (zh) * 2014-01-26 2018-12-18 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法、半导体器件和电子装置
JP6402978B2 (ja) * 2014-07-25 2018-10-10 セイコーエプソン株式会社 半導体回路素子、電子機器、および移動体
US10236265B2 (en) 2014-07-28 2019-03-19 Infineon Technologies Ag Semiconductor chip and method for forming a chip pad
JP6434763B2 (ja) * 2014-09-29 2018-12-05 ルネサスエレクトロニクス株式会社 半導体装置
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CN105789108B (zh) * 2014-12-16 2019-02-12 中芯国际集成电路制造(上海)有限公司 功率晶体管芯片的制作方法及功率晶体管芯片
JP6589277B2 (ja) * 2015-01-14 2019-10-16 富士電機株式会社 高耐圧受動素子および高耐圧受動素子の製造方法
JP6724308B2 (ja) * 2015-08-07 2020-07-15 セイコーエプソン株式会社 発振モジュール、振動デバイス、電子機器、および移動体
JP2017045864A (ja) * 2015-08-26 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US20180261467A1 (en) * 2015-10-01 2018-09-13 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
US9941565B2 (en) 2015-10-23 2018-04-10 Analog Devices Global Isolator and method of forming an isolator
US10204732B2 (en) 2015-10-23 2019-02-12 Analog Devices Global Dielectric stack, an isolator device and method of forming an isolator device
JP2017098334A (ja) * 2015-11-19 2017-06-01 ルネサスエレクトロニクス株式会社 半導体装置
JP2018182223A (ja) * 2017-04-20 2018-11-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6819564B2 (ja) * 2017-12-19 2021-01-27 三菱電機株式会社 半導体装置およびその製造方法
DE102019122844B4 (de) 2018-08-29 2024-07-25 Analog Devices International Unlimited Company Back-to-Back-Isolationsschaltung
CN109326571B (zh) * 2018-09-26 2020-12-29 矽力杰半导体技术(杭州)有限公司 芯片封装组件及其制造方法
JP2020088200A (ja) * 2018-11-27 2020-06-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US11450469B2 (en) 2019-08-28 2022-09-20 Analog Devices Global Unlimited Company Insulation jacket for top coil of an isolated transformer
US11716117B2 (en) * 2020-02-14 2023-08-01 Texas Instruments Incorporated Circuit support structure with integrated isolation circuitry
JP7332775B2 (ja) * 2020-03-19 2023-08-23 株式会社東芝 アイソレータ
JP7284121B2 (ja) * 2020-03-23 2023-05-30 株式会社東芝 アイソレータ
JP2021174955A (ja) * 2020-04-30 2021-11-01 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
DE112021004413B4 (de) * 2020-09-23 2024-06-13 Rohm Co. Ltd. Halbleitervorrichtung, Halbleitermodul, Motoransteuerungsvorrichtung und Fahrzeug
JP7535953B2 (ja) * 2021-01-13 2024-08-19 三菱電機株式会社 トランス装置および半導体装置
JP2022144836A (ja) 2021-03-19 2022-10-03 株式会社東芝 アイソレータ
CN113035507B (zh) * 2021-04-22 2025-09-30 全球能源互联网研究院有限公司 一种用于直流gis的电压互感器
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Also Published As

Publication number Publication date
JP2014123671A (ja) 2014-07-03
CN103887287A (zh) 2014-06-25
US9818815B2 (en) 2017-11-14
US8987861B2 (en) 2015-03-24
CN103887287B (zh) 2019-04-09
US20180069073A1 (en) 2018-03-08
JP6091206B2 (ja) 2017-03-08
US10157974B2 (en) 2018-12-18
US20140175602A1 (en) 2014-06-26
US9219108B2 (en) 2015-12-22
US20150162395A1 (en) 2015-06-11
US20160087025A1 (en) 2016-03-24

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