JP6085592B2 - 固相拡散により極浅ドーピング領域を形成する方法 - Google Patents

固相拡散により極浅ドーピング領域を形成する方法 Download PDF

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JP6085592B2
JP6085592B2 JP2014502829A JP2014502829A JP6085592B2 JP 6085592 B2 JP6085592 B2 JP 6085592B2 JP 2014502829 A JP2014502829 A JP 2014502829A JP 2014502829 A JP2014502829 A JP 2014502829A JP 6085592 B2 JP6085592 B2 JP 6085592B2
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dopant
layer
substrate
boron
patterned
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JP2014513416A (ja
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ディー クラーク，ロバート
ディー クラーク，ロバート
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority claimed from US13/077,688 external-priority patent/US8580664B2/en
Priority claimed from US13/077,721 external-priority patent/US8569158B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66356—Gated diodes, e.g. field controlled diodes [FCD], static induction thyristors [SITh], field controlled thyristors [FCTh]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
JP2014502829A 2011-03-31 2012-03-30 固相拡散により極浅ドーピング領域を形成する方法 Expired - Fee Related JP6085592B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13/077,688 US8580664B2 (en) 2011-03-31 2011-03-31 Method for forming ultra-shallow boron doping regions by solid phase diffusion
US13/077,688 2011-03-31
US13/077,721 US8569158B2 (en) 2011-03-31 2011-03-31 Method for forming ultra-shallow doping regions by solid phase diffusion
US13/077,721 2011-03-31
PCT/US2012/031410 WO2012135599A1 (fr) 2011-03-31 2012-03-30 Procédé de formation de régions de dopage ultra-minces par diffusion en phase solide

Publications (2)

Publication Number Publication Date
JP2014513416A JP2014513416A (ja) 2014-05-29
JP6085592B2 true JP6085592B2 (ja) 2017-02-22

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JP2014502829A Expired - Fee Related JP6085592B2 (ja) 2011-03-31 2012-03-30 固相拡散により極浅ドーピング領域を形成する方法

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JP (1) JP6085592B2 (fr)
KR (2) KR101932897B1 (fr)
CN (1) CN103477419B (fr)
WO (1) WO2012135599A1 (fr)

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Publication number Priority date Publication date Assignee Title
US9245754B2 (en) * 2014-05-28 2016-01-26 Mark E. Granahan Simplified charge balance in a semiconductor device
CN104282556B (zh) * 2014-06-23 2017-06-23 上海先进半导体制造股份有限公司 双极型晶体管发射极的掺杂方法
US9640400B1 (en) * 2015-10-15 2017-05-02 Applied Materials, Inc. Conformal doping in 3D si structure using conformal dopant deposition
CN106960790A (zh) * 2016-01-11 2017-07-18 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法、电子装置
US10068981B2 (en) * 2016-03-02 2018-09-04 Lam Research Corporation Rare earth metal surface-activated plasma doping on semiconductor substrates
US10032628B2 (en) * 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
JP6630237B2 (ja) 2016-06-06 2020-01-15 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置及びプログラム
US9881918B1 (en) 2016-09-30 2018-01-30 Taiwan Semiconductor Manufacturing Company, Ltd. Forming doped regions in semiconductor strips
US10522354B2 (en) * 2017-06-08 2019-12-31 Lam Research Corporation Antimony co-doping with phosphorus to form ultrashallow junctions using atomic layer deposition and annealing
CN107369622B (zh) * 2017-06-30 2020-02-14 上海集成电路研发中心有限公司 一种超浅结的制备方法
JP6988216B2 (ja) * 2017-07-12 2022-01-05 富士電機株式会社 半導体装置の製造方法

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JPS551117A (en) * 1978-06-16 1980-01-07 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH01165113A (ja) * 1987-12-21 1989-06-29 Seiko Instr & Electron Ltd 拡散層の形成方法
JPH07162014A (ja) * 1993-12-07 1995-06-23 Honda Motor Co Ltd 半導体装置の製造方法
JPH097962A (ja) * 1995-06-15 1997-01-10 Hitachi Ltd ボロン不純物層形成方法およびそれを用いて製造された半導体装置
US5994209A (en) * 1996-11-13 1999-11-30 Applied Materials, Inc. Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films
JP2000091254A (ja) * 1998-09-11 2000-03-31 Oki Electric Ind Co Ltd Ｚｎ固相拡散方法およびこれを用いた発光素子
JP2003158263A (ja) * 2001-11-26 2003-05-30 Hitachi Ltd 半導体装置の製造方法
JP2004031529A (ja) * 2002-06-25 2004-01-29 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2006093216A (ja) * 2004-09-21 2006-04-06 Toshiba Corp 半導体装置
KR100704380B1 (ko) * 2005-12-06 2007-04-09 한국전자통신연구원 반도체 소자 제조 방법
US7968440B2 (en) * 2008-03-19 2011-06-28 The Board Of Trustees Of The University Of Illinois Preparation of ultra-shallow semiconductor junctions using intermediate temperature ramp rates and solid interfaces for defect engineering

Also Published As

Publication number Publication date
CN103477419A (zh) 2013-12-25
KR20140023960A (ko) 2014-02-27
CN103477419B (zh) 2017-07-07
WO2012135599A1 (fr) 2012-10-04
KR20180070713A (ko) 2018-06-26
KR101932897B1 (ko) 2018-12-27
JP2014513416A (ja) 2014-05-29

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