JP6043295B2 - 電子デバイス - Google Patents
電子デバイス Download PDFInfo
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- JP6043295B2 JP6043295B2 JP2013540384A JP2013540384A JP6043295B2 JP 6043295 B2 JP6043295 B2 JP 6043295B2 JP 2013540384 A JP2013540384 A JP 2013540384A JP 2013540384 A JP2013540384 A JP 2013540384A JP 6043295 B2 JP6043295 B2 JP 6043295B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (15)
- 基板上の層の積層において、下側の高さと上側の高さで位置決めされた、パターニングされた導電性層を含むトランジスタのアレイを備えるデバイスであって、
前記パターニングされた導電性層は、前記トランジスタのアレイのソース電極−ドレイン電極とゲートコンダクタと、
前記ドレイン電極のそれぞれに接続され、それぞれの導電性層間リンクの基部を提供する複数のドレインパッドと、
前記ソース電極−ドレイン電極の対におけるソース電極−ドレイン電極間に半導体チャネルを提供する半導体層とを画定し、
前記層の積層は、前記下側の高さの下に誘電性層をさらに備え、そして、前記誘電性層の下に、さらなるパターニングされた導電性層をさらに備え、
前記さらなるパターニングされた導電性層が、開口部を画定し、前記開口部を介して、前記誘電性層が、前記基板と前記下側の高さで位置決めされた前記パターニングされた導電性層との間の粘着強度を増加させるように働き、
また前記さらなるパターニングされた導電性層は、前記アレイのトランジスタのソース電極−ドレイン電極対の半導体チャネルと重なることなく、前記誘電性層を介して容量的に結合するために前記ドレインパッドと重なる導電性要素のアレイを画定し、
かつ、前記導電性要素のアレイは、重なる前記ドレインパッドよりも大きい、デバイス。 - 前記基板は上側有機表面を備える、請求項1に記載のデバイス。
- 前記基板は、有機平坦化層でコーティングされた有機ポリマーサポートを含む、請求項2に記載のデバイス。
- 前記誘電性層は無機材料を含む、請求項1〜3のいずれかに記載のデバイス。
- 前記半導体層は、有機材料を含み、前記半導体チャネルと上を覆うゲートコンダクタとの間にゲート誘電性要素を提供するように有機材料の層をさらに含む、請求項1〜4のいずれかに記載のデバイス。
- 前記誘電性層は約5よりも大きい誘電率を有する、請求項1〜5のいずれかに記載のデバイス。
- 前記誘電性層は約5から約9.3の誘電率を有する、請求項6に記載のデバイス。
- トランジスタのアレイを含むデバイスであって、
前記アレイのトランジスタのソース電極−ドレイン電極を画定する第1のパターニングされた導電性層と、前記第1のパターニングされた導電性層の上下にパターニングされた上導電層と下導電層とを含み、前記パターニングされた上導電層と下導電層は両方ともトランジスタのアレイのゲートラインを画定し、前記トランジスタのアレイはボトムゲートトランジスタとトップゲートトランジスタの混合アレイを含み、前記パターニングされた下導電層は一組のボトムゲートラインを画定し、前記パターニングされた上導電層は一組のトップゲートラインを画定し、それぞれのトップゲートラインはそれぞれのボトムゲートライン対の間に位置し、前記混合アレイのトランジスタのそれぞれが、前記混合アレイの他のトランジスタと接続されていない各画素電極と接続されている、前記デバイス。 - 前記第1のパターニングされた導電性層がさらに複数のドレインパッドを画定し、前記混合アレイのトランジスタのそれぞれのドレイン電極が、複数のドレインパッドのそれぞれの一つに接続されている、請求項8に記載のデバイス。
- 前記ボトムゲートトランジスタとトップゲートトランジスタの両方が、ドレインパッドを含み、それぞれのドレインパッドは、それぞれの画素電極に対する層間導電性接続の基部を提供する、請求項8に記載のデバイス。
- 前記トップゲートラインは、1つ以上の前記ドレインパッドと重なる1つ以上のゲートラインを備え、前記1つ以上のドレインパッドは、1つ以上の前記ボトムゲートラインと重なっている、請求項10に記載のデバイス。
- それぞれの前記トップゲートラインは、前記トップゲートトランジスタのそれぞれのグループと接続され、それぞれの前記ボトムゲートラインは、前記ボトムゲートトランジスタのそれぞれのグループと接続される、請求項8に記載のデバイス。
- 前記基板はプラスチック基板であり、前記誘電性層は、前記プラスチック基板を介した液体と酸素との進入から上を覆う要素を守るバリアとしても働く、請求項1〜7のいずれかに記載のデバイス。
- 前記下導電層の下にさらにプラスチック基板と誘電性層を備え、前記誘電性層は、プラスチック基板を介した液体と酸素との進入から上を覆う要素を守るバリアとして働く、請求項8〜12のいずれかに記載のデバイス。
- 前記下導電層の下にさらに基板と、前記下導電層と前記第1のパターニングされた導電性層との間の誘電性層を含み、前記誘電性層は、前記基板と前記第1のパターニングされた導電性層との間の粘着強度を増加させるように働く、請求項8〜12のいずれかに記載のデバイス。
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GB201020049A GB2485828B (en) | 2010-11-26 | 2010-11-26 | Electronic devices |
GB1020049.1 | 2010-11-26 | ||
PCT/EP2011/071070 WO2012069650A1 (en) | 2010-11-26 | 2011-11-25 | Electronic devices |
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JP2014504444A JP2014504444A (ja) | 2014-02-20 |
JP2014504444A5 JP2014504444A5 (ja) | 2015-01-08 |
JP6043295B2 true JP6043295B2 (ja) | 2016-12-14 |
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JP2013540384A Expired - Fee Related JP6043295B2 (ja) | 2010-11-26 | 2011-11-25 | 電子デバイス |
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US (1) | US9130179B2 (ja) |
JP (1) | JP6043295B2 (ja) |
CN (1) | CN103283026B (ja) |
DE (1) | DE112011103939T5 (ja) |
GB (1) | GB2485828B (ja) |
WO (1) | WO2012069650A1 (ja) |
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GB2519081B (en) * | 2013-10-08 | 2019-07-03 | Flexenable Ltd | Electronic devices including organic materials |
GB2519085B (en) * | 2013-10-08 | 2018-09-26 | Flexenable Ltd | Transistor array routing |
GB2529620A (en) * | 2014-08-18 | 2016-03-02 | Flexenable Ltd | Patterning layer stacks for electronic devices |
CN109244089B (zh) * | 2017-07-10 | 2021-08-17 | 京东方科技集团股份有限公司 | 一种感测基板及其制作方法、显示装置 |
GB2567871B (en) * | 2017-10-27 | 2022-02-02 | Flexenable Ltd | Electronic device for pressure sensors |
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JPH03227062A (ja) * | 1990-01-31 | 1991-10-08 | Matsushita Electron Corp | 薄膜トランジスタアレイ |
EP1243034A1 (en) | 1999-12-21 | 2002-09-25 | Plastic Logic Limited | Solution processed devices |
US6452207B1 (en) * | 2001-03-30 | 2002-09-17 | Lucent Technologies Inc. | Organic semiconductor devices |
US6596569B1 (en) * | 2002-03-15 | 2003-07-22 | Lucent Technologies Inc. | Thin film transistors |
JP2004140329A (ja) * | 2002-08-19 | 2004-05-13 | Seiko Epson Corp | 基板装置及びその製造方法、電気光学装置及び電子機器 |
JP2004151546A (ja) * | 2002-10-31 | 2004-05-27 | Sharp Corp | アクティブマトリクス基板および表示装置 |
GB0229191D0 (en) * | 2002-12-14 | 2003-01-22 | Plastic Logic Ltd | Embossing of polymer devices |
JP2006058730A (ja) * | 2004-08-23 | 2006-03-02 | Sony Corp | 表示装置 |
KR100801961B1 (ko) * | 2006-05-26 | 2008-02-12 | 한국전자통신연구원 | 듀얼 게이트 유기트랜지스터를 이용한 인버터 |
KR100790761B1 (ko) * | 2006-09-29 | 2008-01-03 | 한국전자통신연구원 | 인버터 |
JP2008108874A (ja) * | 2006-10-25 | 2008-05-08 | Konica Minolta Holdings Inc | 有機薄膜トランジスタ |
KR101281167B1 (ko) * | 2006-11-22 | 2013-07-02 | 삼성전자주식회사 | 유기발광 디스플레이의 단위 화소부 구동소자 및 그제조방법 |
JP2008147465A (ja) * | 2006-12-11 | 2008-06-26 | Seiko Epson Corp | トランジスタの製造方法、トランジスタ、トランジスタ回路、電子デバイスおよび電子機器 |
US20080272361A1 (en) | 2007-05-02 | 2008-11-06 | Atomate Corporation | High Density Nanotube Devices |
US7851281B2 (en) * | 2007-11-28 | 2010-12-14 | Panasonic Corporation | Manufacturing method of flexible semiconductor device and flexible semiconductor device |
KR101425131B1 (ko) * | 2008-01-15 | 2014-07-31 | 삼성디스플레이 주식회사 | 표시 기판 및 이를 포함하는 표시 장치 |
KR101623958B1 (ko) * | 2008-10-01 | 2016-05-25 | 삼성전자주식회사 | 인버터 및 그의 동작방법과 인버터를 포함하는 논리회로 |
TWI420678B (zh) * | 2008-11-27 | 2013-12-21 | Ind Tech Res Inst | 光感測元件陣列基板 |
JP5381244B2 (ja) * | 2009-03-31 | 2014-01-08 | 大日本印刷株式会社 | 薄膜トランジスタアレイの製造方法及び表示装置 |
GB0909721D0 (en) | 2009-06-05 | 2009-07-22 | Plastic Logic Ltd | Dielectric seed layer |
-
2010
- 2010-11-26 GB GB201020049A patent/GB2485828B/en not_active Expired - Fee Related
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2011
- 2011-11-25 CN CN201180062771.8A patent/CN103283026B/zh not_active Expired - Fee Related
- 2011-11-25 DE DE201111103939 patent/DE112011103939T5/de not_active Withdrawn
- 2011-11-25 US US13/988,399 patent/US9130179B2/en not_active Expired - Fee Related
- 2011-11-25 JP JP2013540384A patent/JP6043295B2/ja not_active Expired - Fee Related
- 2011-11-25 WO PCT/EP2011/071070 patent/WO2012069650A1/en active Application Filing
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CN103283026B (zh) | 2016-07-06 |
US9130179B2 (en) | 2015-09-08 |
DE112011103939T5 (de) | 2013-09-19 |
GB2485828B (en) | 2015-05-13 |
GB2485828A (en) | 2012-05-30 |
JP2014504444A (ja) | 2014-02-20 |
US20130299815A1 (en) | 2013-11-14 |
CN103283026A (zh) | 2013-09-04 |
GB201020049D0 (en) | 2011-01-12 |
WO2012069650A1 (en) | 2012-05-31 |
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