JP6037416B2 - シリコンウエハ研磨用組成物 - Google Patents

シリコンウエハ研磨用組成物 Download PDF

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Publication number
JP6037416B2
JP6037416B2 JP2015521346A JP2015521346A JP6037416B2 JP 6037416 B2 JP6037416 B2 JP 6037416B2 JP 2015521346 A JP2015521346 A JP 2015521346A JP 2015521346 A JP2015521346 A JP 2015521346A JP 6037416 B2 JP6037416 B2 JP 6037416B2
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JP
Japan
Prior art keywords
group
polishing
amide
containing polymer
silicon wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015521346A
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English (en)
Japanese (ja)
Other versions
JPWO2014196299A1 (ja
Inventor
公亮 土屋
公亮 土屋
久典 丹所
久典 丹所
大輝 市坪
大輝 市坪
森　嘉男
嘉男 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toagosei Co Ltd
Fujimi Inc
Original Assignee
Toagosei Co Ltd
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toagosei Co Ltd, Fujimi Inc filed Critical Toagosei Co Ltd
Application granted granted Critical
Publication of JP6037416B2 publication Critical patent/JP6037416B2/ja
Publication of JPWO2014196299A1 publication Critical patent/JPWO2014196299A1/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2015521346A 2013-06-07 2014-05-02 シリコンウエハ研磨用組成物 Active JP6037416B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2013120328 2013-06-07
JP2013120328 2013-06-07
JP2014010836 2014-01-23
JP2014010836 2014-01-23
PCT/JP2014/062176 WO2014196299A1 (ja) 2013-06-07 2014-05-02 シリコンウエハ研磨用組成物

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016135649A Division JP6360108B2 (ja) 2013-06-07 2016-07-08 シリコンウエハ研磨用組成物

Publications (2)

Publication Number Publication Date
JP6037416B2 true JP6037416B2 (ja) 2016-12-07
JPWO2014196299A1 JPWO2014196299A1 (ja) 2017-02-23

Family

ID=52007952

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2015521346A Active JP6037416B2 (ja) 2013-06-07 2014-05-02 シリコンウエハ研磨用組成物
JP2016135649A Active JP6360108B2 (ja) 2013-06-07 2016-07-08 シリコンウエハ研磨用組成物

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2016135649A Active JP6360108B2 (ja) 2013-06-07 2016-07-08 シリコンウエハ研磨用組成物

Country Status (8)

Country Link
US (2) US20160122591A1 (OSRAM)
EP (1) EP3007213B1 (OSRAM)
JP (2) JP6037416B2 (OSRAM)
KR (1) KR102239045B1 (OSRAM)
CN (1) CN105264647B (OSRAM)
SG (1) SG11201508398TA (OSRAM)
TW (1) TWI650410B (OSRAM)
WO (1) WO2014196299A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023181928A1 (ja) 2022-03-23 2023-09-28 株式会社フジミインコーポレーテッド 研磨用組成物

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6403324B2 (ja) * 2014-12-25 2018-10-10 花王株式会社 シリコンウェーハ用研磨液組成物
JP6366139B2 (ja) * 2014-12-25 2018-08-01 花王株式会社 シリコンウェーハ用研磨液組成物の製造方法
JP6705757B2 (ja) * 2015-02-12 2020-06-03 株式会社フジミインコーポレーテッド シリコンウェーハの研磨方法および表面処理組成物
US10748778B2 (en) 2015-02-12 2020-08-18 Fujimi Incorporated Method for polishing silicon wafer and surface treatment composition
CN107735471B (zh) * 2015-07-10 2021-02-12 费罗公司 用于抛光有机聚合物基眼用基材的浆液组合物和添加剂以及方法
JP6801964B2 (ja) * 2016-01-19 2020-12-16 株式会社フジミインコーポレーテッド 研磨用組成物及びシリコン基板の研磨方法
KR102645587B1 (ko) * 2016-02-29 2024-03-11 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 이것을 사용한 연마 방법
CN109716487B (zh) * 2016-09-21 2023-12-01 福吉米株式会社 表面处理组合物
KR20190134692A (ko) * 2017-03-31 2019-12-04 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
JP6916039B2 (ja) * 2017-06-05 2021-08-11 Ａｔシリカ株式会社 研磨用組成物
CN111315835B (zh) * 2017-11-06 2022-08-26 福吉米株式会社 研磨用组合物及其制造方法
JP7353051B2 (ja) * 2019-03-26 2023-09-29 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
JP7356248B2 (ja) * 2019-03-28 2023-10-04 株式会社フジミインコーポレーテッド リンス用組成物およびリンス方法
CN110922897B (zh) * 2019-11-18 2024-03-08 宁波日晟新材料有限公司 一种用于硅化合物的低雾值无损伤抛光液及其制备方法
JP7512035B2 (ja) * 2019-12-24 2024-07-08 ニッタ・デュポン株式会社 研磨用組成物
CN115244659A (zh) * 2020-03-13 2022-10-25 福吉米株式会社 研磨用组合物及研磨方法
WO2021182276A1 (ja) * 2020-03-13 2021-09-16 株式会社フジミインコーポレーテッド 研磨用組成物
JP7562453B2 (ja) 2021-03-12 2024-10-07 キオクシア株式会社 研磨液、研磨装置、及び研磨方法
JP2024523285A (ja) * 2021-06-14 2024-06-28 インテグリス・インコーポレーテッド 硬質基板の研削
JPWO2024195575A1 (OSRAM) * 2023-03-20 2024-09-26
WO2025115883A1 (ja) * 2023-11-28 2025-06-05 大阪有機化学工業株式会社 研磨組成物

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001139935A (ja) * 1999-11-12 2001-05-22 Cheil Ind Co Ltd 研磨用組成物
WO2006112519A1 (ja) * 2005-04-14 2006-10-26 Showa Denko K.K. 研磨組成物
WO2007055278A1 (ja) * 2005-11-11 2007-05-18 Hitachi Chemical Co., Ltd. 酸化ケイ素用研磨剤、添加液および研磨方法
WO2008013226A1 (en) * 2006-07-28 2008-01-31 Showa Denko K.K. Polishing composition
JP2008091524A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp 金属用研磨液
JP2012533649A (ja) * 2009-07-15 2012-12-27 ラム リサーチ コーポレーション 高度な基板洗浄剤及び洗浄用システム
JP2013062510A (ja) * 2008-04-23 2013-04-04 Hitachi Chemical Co Ltd 研磨剤及びこの研磨剤を用いた基板の研磨方法
JP2013222863A (ja) * 2012-04-17 2013-10-28 Kao Corp シリコンウェーハ用研磨液組成物

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KR100447551B1 (ko) * 1999-01-18 2004-09-08 가부시끼가이샤 도시바 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법
KR100663781B1 (ko) * 2003-01-31 2007-01-02 히다치 가세고교 가부시끼가이샤 Ｃμρ연마제 및 연마방법
JP2008181955A (ja) * 2007-01-23 2008-08-07 Fujifilm Corp 金属用研磨液及びそれを用いた研磨方法
JP2009123880A (ja) * 2007-11-14 2009-06-04 Showa Denko Kk 研磨組成物
SG10201605686XA (en) * 2008-02-01 2016-08-30 Fujimi Inc Polishing Composition And Polishing Method Using The Same
US20110081780A1 (en) * 2008-02-18 2011-04-07 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
JP5207002B2 (ja) * 2008-02-27 2013-06-12 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法、化学機械研磨用水系分散体の再生方法
KR101277342B1 (ko) * 2009-04-20 2013-06-20 히타치가세이가부시끼가이샤 반도체 기판용 연마액 및 반도체 기판의 연마 방법
JP5878020B2 (ja) * 2009-11-11 2016-03-08 株式会社クラレ 化学的機械的研磨用スラリー並びにそれを用いる基板の研磨方法
JP4772156B1 (ja) 2010-07-05 2011-09-14 花王株式会社 シリコンウエハ用研磨液組成物
KR101907229B1 (ko) * 2011-02-03 2018-10-11 니타 하스 인코포레이티드 연마용 조성물 및 그것을 이용한 연마 방법
SG11201405091TA (en) * 2012-02-21 2014-09-26 Hitachi Chemical Co Ltd Polishing agent, polishing agent set, and substrate polishing method

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001139935A (ja) * 1999-11-12 2001-05-22 Cheil Ind Co Ltd 研磨用組成物
WO2006112519A1 (ja) * 2005-04-14 2006-10-26 Showa Denko K.K. 研磨組成物
WO2007055278A1 (ja) * 2005-11-11 2007-05-18 Hitachi Chemical Co., Ltd. 酸化ケイ素用研磨剤、添加液および研磨方法
WO2008013226A1 (en) * 2006-07-28 2008-01-31 Showa Denko K.K. Polishing composition
JP2008091524A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp 金属用研磨液
JP2013062510A (ja) * 2008-04-23 2013-04-04 Hitachi Chemical Co Ltd 研磨剤及びこの研磨剤を用いた基板の研磨方法
JP2012533649A (ja) * 2009-07-15 2012-12-27 ラム リサーチ コーポレーション 高度な基板洗浄剤及び洗浄用システム
JP2013222863A (ja) * 2012-04-17 2013-10-28 Kao Corp シリコンウェーハ用研磨液組成物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023181928A1 (ja) 2022-03-23 2023-09-28 株式会社フジミインコーポレーテッド 研磨用組成物

Also Published As

Publication number Publication date
KR102239045B1 (ko) 2021-04-12
US10745588B2 (en) 2020-08-18
EP3007213B1 (en) 2020-03-18
SG11201508398TA (en) 2015-11-27
TWI650410B (zh) 2019-02-11
EP3007213A1 (en) 2016-04-13
JPWO2014196299A1 (ja) 2017-02-23
CN105264647A (zh) 2016-01-20
US20170253767A1 (en) 2017-09-07
EP3007213A4 (en) 2017-02-22
WO2014196299A1 (ja) 2014-12-11
KR20160013896A (ko) 2016-02-05
JP6360108B2 (ja) 2018-07-18
JP2016201557A (ja) 2016-12-01
TW201510197A (zh) 2015-03-16
US20160122591A1 (en) 2016-05-05
CN105264647B (zh) 2018-01-09

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