WO2012105651A1 - 研磨用組成物およびそれを用いた研磨方法 - Google Patents
研磨用組成物およびそれを用いた研磨方法 Download PDFInfo
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- WO2012105651A1 WO2012105651A1 PCT/JP2012/052402 JP2012052402W WO2012105651A1 WO 2012105651 A1 WO2012105651 A1 WO 2012105651A1 JP 2012052402 W JP2012052402 W JP 2012052402W WO 2012105651 A1 WO2012105651 A1 WO 2012105651A1
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- Prior art keywords
- polishing
- polishing composition
- concentration
- block type
- type compound
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- 238000005498 polishing Methods 0.000 title claims abstract description 179
- 239000000203 mixture Substances 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims description 7
- 150000001875 compounds Chemical class 0.000 claims abstract description 75
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- 239000006061 abrasive grain Substances 0.000 claims abstract description 16
- 229920003169 water-soluble polymer Polymers 0.000 claims abstract description 13
- -1 amine compound Chemical class 0.000 claims description 19
- 239000006174 pH buffer Substances 0.000 claims description 10
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 8
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 7
- 229920000570 polyether Polymers 0.000 claims description 7
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical compound OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 5
- 125000006353 oxyethylene group Chemical group 0.000 claims description 5
- 239000006179 pH buffering agent Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 43
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 9
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 9
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 9
- 239000002738 chelating agent Substances 0.000 description 7
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 6
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 6
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 5
- 229960003330 pentetic acid Drugs 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 description 3
- FSVCELGFZIQNCK-UHFFFAOYSA-N N,N-bis(2-hydroxyethyl)glycine Chemical compound OCCN(CCO)CC(O)=O FSVCELGFZIQNCK-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 150000003973 alkyl amines Chemical group 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 229960001484 edetic acid Drugs 0.000 description 3
- 125000001165 hydrophobic group Chemical group 0.000 description 3
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 3
- 229910000027 potassium carbonate Inorganic materials 0.000 description 3
- 235000011181 potassium carbonates Nutrition 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 2
- RAEOEMDZDMCHJA-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-[2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]ethyl]amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CCN(CC(O)=O)CC(O)=O)CC(O)=O RAEOEMDZDMCHJA-UHFFFAOYSA-N 0.000 description 2
- JYXGIOKAKDAARW-UHFFFAOYSA-N N-(2-hydroxyethyl)iminodiacetic acid Chemical compound OCCN(CC(O)=O)CC(O)=O JYXGIOKAKDAARW-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001412 amines Chemical group 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229920001451 polypropylene glycol Polymers 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 2
- 235000017557 sodium bicarbonate Nutrition 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- GXVUZYLYWKWJIM-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanamine Chemical compound NCCOCCN GXVUZYLYWKWJIM-UHFFFAOYSA-N 0.000 description 1
- VPIXQGUBUKFLRF-UHFFFAOYSA-N 3-(2-chloro-5,6-dihydrobenzo[b][1]benzazepin-11-yl)-N-methyl-1-propanamine Chemical compound C1CC2=CC=C(Cl)C=C2N(CCCNC)C2=CC=CC=C21 VPIXQGUBUKFLRF-UHFFFAOYSA-N 0.000 description 1
- BDDLHHRCDSJVKV-UHFFFAOYSA-N 7028-40-2 Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O BDDLHHRCDSJVKV-UHFFFAOYSA-N 0.000 description 1
- XNCOSPRUTUOJCJ-UHFFFAOYSA-N Biguanide Chemical compound NC(N)=NC(N)=N XNCOSPRUTUOJCJ-UHFFFAOYSA-N 0.000 description 1
- 229940123208 Biguanide Drugs 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RUSUZAGBORAKPY-UHFFFAOYSA-N acetic acid;n'-[2-(2-aminoethylamino)ethyl]ethane-1,2-diamine Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NCCNCCNCCN RUSUZAGBORAKPY-UHFFFAOYSA-N 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- STIAPHVBRDNOAJ-UHFFFAOYSA-N carbamimidoylazanium;carbonate Chemical compound NC(N)=N.NC(N)=N.OC(O)=O STIAPHVBRDNOAJ-UHFFFAOYSA-N 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229960004106 citric acid Drugs 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- DEFVIWRASFVYLL-UHFFFAOYSA-N ethylene glycol bis(2-aminoethyl)tetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)CCOCCOCCN(CC(O)=O)CC(O)=O DEFVIWRASFVYLL-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- DJQJFMSHHYAZJD-UHFFFAOYSA-N lidofenin Chemical compound CC1=CC=CC(C)=C1NC(=O)CN(CC(O)=O)CC(O)=O DJQJFMSHHYAZJD-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N malic acid Chemical compound OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- HWPKGOGLCKPRLZ-UHFFFAOYSA-M monosodium citrate Chemical compound [Na+].OC(=O)CC(O)(C([O-])=O)CC(O)=O HWPKGOGLCKPRLZ-UHFFFAOYSA-M 0.000 description 1
- 239000002524 monosodium citrate Substances 0.000 description 1
- 235000018342 monosodium citrate Nutrition 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- AVTYONGGKAJVTE-OLXYHTOASA-L potassium L-tartrate Chemical compound [K+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O AVTYONGGKAJVTE-OLXYHTOASA-L 0.000 description 1
- 239000011736 potassium bicarbonate Substances 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 1
- 239000001508 potassium citrate Substances 0.000 description 1
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 229940086066 potassium hydrogencarbonate Drugs 0.000 description 1
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 1
- 229940074439 potassium sodium tartrate Drugs 0.000 description 1
- 239000001472 potassium tartrate Substances 0.000 description 1
- 229940111695 potassium tartrate Drugs 0.000 description 1
- 235000011005 potassium tartrates Nutrition 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229960001124 trientine Drugs 0.000 description 1
- 235000015870 tripotassium citrate Nutrition 0.000 description 1
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 description 1
- 229940038773 trisodium citrate Drugs 0.000 description 1
- 235000019263 trisodium citrate Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Definitions
- the present invention relates to a polishing composition for polishing a silicon wafer and a polishing method using the same.
- multistage polishing is generally performed. That is, a multilevel polishing is performed in which the silicon wafer is flattened by the primary polishing, and the surface of the silicon wafer is finished more precisely after the subsequent secondary polishing.
- a conventional polishing composition for primary polishing uses abrasive grains in order to obtain a polishing rate.
- abrasive grains nanometer-order colloidal particles or the like are used.
- Mechanical polishing with a polishing composition using abrasive grains can obtain a high polishing rate, but at the same time, it can be a factor in generating scratches and generating LPD.
- This polishing composition A comprises an aqueous alkaline solution containing a water-soluble silicic acid component and an alkaline component and having a pH of 8.5 to 13.
- this polishing composition A is used for grinding
- the subsequent polishing mainly involves finer roughness, scratch and nanometer order defects, and removal / reduction of LPD.
- an object of the present invention is to provide a polishing composition that does not contain abrasive grains and that provides a polishing rate applicable to primary polishing of a silicon wafer. Is to provide.
- Another object of the present invention is to provide a polishing method using a polishing composition that does not contain abrasive grains and that provides a polishing rate applicable to primary polishing of a silicon wafer.
- the polishing composition is a polishing composition for polishing a silicon wafer without containing abrasive grains, and comprises a polishing accelerator, a water-soluble polymer, an oxyethylene group and an oxypropylene group. And a block type compound contained in the block type polyether.
- the polishing accelerator is made of an amine compound or an inorganic alkali compound.
- the polishing method is a polishing method for polishing a silicon wafer using the polishing composition according to claim 1 or 2.
- the polishing composition is a polishing composition for polishing a silicon wafer without containing abrasive grains, and includes a polishing accelerator, a water-soluble polymer, a block type compound, including.
- a polishing rate greater than 0.1 ⁇ m / min can be obtained by polishing a silicon wafer using the polishing composition.
- the hydrophobic portion is located on the surface of the silicon wafer after the molecular chains are adsorbed, and can prevent the adsorption of foreign substances existing in the polishing environment.
- the water-soluble polymer forms a three-dimensional polymer chain containing water molecules by hydrogen bonding, so that the surface of the silicon wafer can be kept hydrophilic.
- polishing composition according to the embodiment of the present invention can be applied to the primary polishing of a silicon wafer.
- silicon wafer is used to describe an explanation related to polishing
- silicon is used to describe an explanation related to a chemical reaction.
- Polishing composition COMP1 by this Embodiment is a polishing composition which grind
- block type compound a compound in which an oxyethylene group and an oxypropylene group are contained in a block type polyether is referred to as a “block type compound”.
- Polishing composition COMP1 is used for polishing a silicon wafer having an oxide layer formed on its surface, that is, primary polishing of a silicon wafer.
- the polishing composition COMP1 is used for single-side polishing of silicon wafers or double-side polishing of silicon wafers.
- the pH buffering agent includes, for example, carbonate and bicarbonate.
- carbonate and bicarbonate can be mixed, or each can be used alone.
- the carbonate is composed of a monovalent ion carbonate such as an alkali metal element, and is composed of, for example, potassium carbonate or sodium carbonate.
- carbonates composed of divalent metal ions such as alkaline earth metal elements, and carbonates composed of nitrogen groups and organic compounds such as ammonium salts and amine carbonates.
- the amine carbonate includes guanidine carbonate, aminoguanidine carbonate, biguanide carbonate and the like.
- the bicarbonate is composed of an inorganic compound and an organic compound, such as a salt of an alkali / alkaline earth metal element, an ammonium salt, or a salt of an amine compound, like the carbonate.
- the monovalent alkali metal hydrogen carbonate compound is composed of either potassium hydrogen carbonate or sodium hydrogen carbonate.
- PH buffer contains carbonate and bicarbonate.
- the carbonate is composed of a monovalent ion carbonate, for example, potassium carbonate or sodium carbonate.
- the bicarbonate is composed of a monovalent ion bicarbonate, for example, potassium carbonate or sodium bicarbonate.
- the polishing accelerator is made of an amine compound or an inorganic alkali compound.
- the amine compound includes a primary to quaternary amine containing a nitrogen group.
- the amine compound is composed of an amine having 1 to 6 carbon atoms, such as 2- (2-aminoethylamino) ethanol. This is because if the number of carbon atoms exceeds 6, the ability to form a complex with silicon as a polishing accelerator decreases, and the effect per unit concentration decreases.
- the water-soluble polymer is made of a polymer compound having a cellulose structure, for example, hydroxyethyl cellulose.
- the water-soluble polymer is made of a nonionic polymer compound, and is made of, for example, any of polyvinyl alcohol, polyacrylamide, polyvinyl pyrrolidone, polyethylene glycol, polypropylene glycol, and polyethylene oxide.
- the block type compound is composed of a block type compound in which the oxyethylene group and the oxypropylene group have hydrophilic and hydrophobic groups in one polymer chain of the block type polyether, for example, ethylenediaminetetrapolyoxyethylenepolyoxypropylene. .
- Polishing composition COMP1 is prepared by appropriately mixing a pH buffer, a polishing accelerator, a water-soluble polymer, and a block compound and adding water. Polishing composition COMP1 is produced by sequentially mixing a pH buffer, a polishing accelerator, a water-soluble polymer, and a block compound in water. As means for mixing these components, means commonly used in the technical field of polishing compositions such as a homogenizer and ultrasonic waves are used.
- the pH of the polishing composition COMP1 is controlled to 10.5.
- the polishing composition COMP1 may further contain a chelating agent.
- the chelating agent is composed of at least one compound selected from the group consisting of these substituents and derivatives. Further, the chelating agent may comprise an organic acid, for example, potassium sodium tartrate, potassium tartrate, citric acid, trisodium citrate, monosodium citrate, tripotassium citrate, lactic acid, and DL-malic acid. Consists of either.
- the chelating agent prevents the silicon wafer, which is an object to be polished, from being contaminated with metal.
- the chelating agent basically does not affect the polishing rate and the surface roughness of the silicon wafer, but the pH of the polishing composition changes according to its concentration. To do. For this reason, a chelating agent may function as a pH adjuster.
- Table 1 shows the components of the polishing composition and the polishing rate in Example 1.
- the polishing composition of Example 1 was 4.75 wt% K 2 CO 3 , 1.15 wt% KHCO 3 , 0.50 wt% 2- (2-aminoethylamine) ethanol, 0 0.025 wt% hydroxyethyl cellulose (HEC), 0.025 wt% ethylenediaminetetrapolyoxyethylene polyoxypropylene, and 0.375 wt% diethylenetriaminepentaacetic acid.
- the polishing composition of Example 1 contains two types of pH buffering agents.
- a polishing composition diluted 25 times of Example 1 to a polishing pad (urethane pad (manufactured by Nitta Haas Co.)) was 5.0. While rotating at a rate of 175 (g / cm 2 ) to a silicon wafer with a diameter of 300 mm, the polishing platen is rotated at an upper platen of 11.9 rpm / lower platen of 35.0 rpm. Double-side polishing was performed for 30 to 120 minutes while rotating the carrier at a rotation speed of ⁇ 8.3 rpm.
- the difference in thickness of the silicon wafer removed by polishing was measured with a Kuroda Seiko Co., Ltd. wafer flatness inspection device Nanometro 300TT.
- the polishing rate was evaluated by the thickness ( ⁇ m / min) of the silicon wafer removed by polishing per unit time.
- a polishing rate greater than 0.1 ( ⁇ m / min) can be obtained by polishing a silicon wafer using the polishing composition COMP1.
- the polishing composition COMP1 can be applied to the primary polishing of a silicon wafer.
- the polishing composition of Example 2 comprises 0.200 wt% K 2 CO 3 , 0.050 wt% KHCO 3 , 0.020 wt% 2- (2-aminoethylamine) ethanol, Hydroxyethyl cellulose (HEC) having an average molecular weight of 500,000 and a concentration of 10 ppm, 0.1 to 10 ppm of ethylenediaminetetrapolyoxyethylenepolyoxypropylene, and 0.015% by weight of diethylenetriaminepentaacetic acid.
- HEC Hydroxyethyl cellulose
- the polishing composition of Example 3 comprises 0.200 wt% K 2 CO 3 , 0.050 wt% KHCO 3 , 0.020 wt% 2- (2-aminoethylamine) ethanol, Hydroxyethyl cellulose (HEC) having an average molecular weight of 1,300,000 and a concentration of 10 ppm, 0.1 to 10 ppm of ethylenediaminetetrapolyoxyethylenepolyoxypropylene, and 0.015% by weight of diethylenetriaminepentaacetic acid.
- HEC Hydroxyethyl cellulose
- the polishing composition of Example 3 was obtained by changing the weight average molecular weight of hydroxyethyl cellulose (HEC) in the polishing composition of Example 2 from 500,000 (Mw) to 1,300,000 (Mw). .
- HEC hydroxyethyl cellulose
- LPD and Haze of the polished silicon wafer were measured with Hitachi Electronics Engineering Co., Ltd. LS6600.
- the LPD measured a size larger than 130 nm and a size larger than 90 nm.
- FIG. 1 is a graph showing the relationship between the relative polishing rate and the concentration of the block type compound.
- the vertical axis represents the relative polishing rate
- the white rhombus indicates the relative polishing rate when the polishing composition of Example 2 is used
- the white circle indicates the relative polishing rate when the polishing composition of Example 3 is used.
- a relative polishing rate shows a polishing rate when the polishing rate is 1.0 when a polishing composition containing abrasive grains is used.
- the polishing composition containing abrasive grains contains 5 wt% colloidal silica, 0.06 wt% potassium hydroxide (KOH), and ethylenediaminetetraacetic acid (EDTA), and has a pH of 11.2. is there.
- the relative polishing rate is larger than 1.0 in the entire range of the concentration of the block type compound of 0.1 to 10 ppm. That is, the polishing rate when the polishing compositions of Examples 2 and 3 are used is larger than the polishing rate when the polishing composition containing abrasive grains is used.
- FIG. 2 is a graph showing the relationship between LPD and the concentration of block type compound.
- the vertical axis represents LPD larger than 130 nm
- the white rhombus shows the relationship between the concentration of the LPD larger than 130 nm and the block type compound when the polishing composition of Example 2 is used, and the white circle uses the polishing composition of Example 3. The relationship between the LPD larger than 130 nm and the concentration of the block type compound is shown.
- the black rhombus indicates an LPD larger than 130 nm when the concentration of the block type compound is 0 ppm in the polishing composition of Example 2, and the black circle indicates the block type compound in the polishing composition of Example 3.
- An LPD larger than 130 nm when the concentration is 0 ppm is shown.
- LPD larger than 130 nm when the polishing compositions of Examples 2 and 3 are used is a case where the concentration of the block type compound is 0 ppm at the concentration of the block type compound of 1 to 10 ppm. Smaller than.
- FIG. 3 is a diagram showing another relationship between the LPD and the concentration of the block type compound.
- the vertical axis represents LPD larger than 90 nm
- the white rhombus shows the relationship between the concentration of the LPD larger than 90 nm and the block type compound when the polishing composition of Example 2 is used, and the white circle uses the polishing composition of Example 3. The relationship between the LPD larger than 90 nm and the concentration of the block type compound is shown.
- the black rhombus indicates an LPD larger than 90 nm when the concentration of the block type compound is 0 ppm in the polishing composition of Example 2, and the black circle indicates the block type compound in the polishing composition of Example 3.
- An LPD larger than 90 nm when the concentration is 0 ppm is shown.
- LPD larger than 90 nm when the polishing compositions of Examples 2 and 3 are used is a case where the concentration of the block type compound is 0 ppm at the concentration of the block type compound of 1 to 10 ppm. Smaller than.
- FIG. 4 is a diagram showing the relationship between Haze and the concentration of the block type compound.
- the vertical axis represents Haze (relative value)
- the white rhombus shows the relationship between Haze (relative value) and the concentration of the block type compound when the polishing composition of Example 2 is used
- the white circle uses the polishing composition of Example 3. The relationship between Haze (relative value) and the concentration of the block type compound is shown.
- the black rhombus indicates Haze (relative value) when the concentration of the block-type compound is 0 ppm in the polishing composition of Example 2, and the black circle indicates the block-type compound in the polishing composition of Example 3. Haze (relative value) when the concentration is 0 ppm is shown.
- the Haze when the polishing compositions of Examples 2 and 3 are used is smaller at a concentration of 1 to 10 ppm of the block type compound than when the concentration of the block type compound is 0 ppm. .
- the concentration of the block type compound is preferably in the range of 1 to 10 ppm.
- FIG. 5 is a graph showing the relationship between the LPD distribution and the concentration of the block type compound.
- the vertical axis represents LPD larger than 130 nm
- a black square shows the relationship between LPD larger than 130 nm and the density
- the range indicated by the straight line in FIG. 5 indicates the LPD distribution range.
- FIG. 6 is a diagram showing another relationship between the LPD distribution and the concentration of the block-type compound.
- the vertical axis represents LPD larger than 90 nm
- a black square shows the relationship between LPD larger than 90 nm and the density
- the range indicated by the straight line in FIG. 6 indicates the LPD distribution range.
- FIG. 7 is a diagram showing the relationship between the distribution of Haze and the concentration of the block-type compound.
- the vertical axis represents Haze (relative value)
- the black squares indicate the relationship between Haze and the concentration of the block type compound when the polishing composition of Example 3 is used.
- the range indicated by the straight line in FIG. 7 indicates the distribution range of Haze.
- the polishing composition COMP1 described above includes a pH buffer, but when the polishing composition COMP1 is not circulated, the polishing composition COMP1 may not include a pH buffer.
- polishing composition COMP1 When circulating polishing composition COMP1, pH of polishing composition COMP1 supplied to the surface of a silicon wafer changes with progress of time. Therefore, the polishing composition COMP1 contains a pH buffer when circulating the polishing composition COMP1.
- the polishing composition COMP1 includes a pH buffer when circulating the polishing composition COMP1, and does not include a pH buffer when not circulating the polishing composition COMP1.
- the block type compound may not contain an alkylamine structure having two nitrogens represented by the general formula (1), and may be an oxyethylene group and an oxypropylene group. Any compound may be used as long as the group is contained in the block-type polyether.
- the present invention is applied to a polishing composition used for polishing a silicon wafer and a polishing method using the same.
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Abstract
Description
研磨装置(DSM20B-5P-4D(スピードファム社製))を用い、研磨パッド(ウレタン製パッド(ニッタ・ハース株式会社製))に実施例1の25倍希釈した研磨用組成物を5.0リットル/分の割合で供給し、かつ、直径300mmのシリコンウェハに175(g/cm2)の圧力を印加しながら研磨定盤を上定盤-11.9rpm/下定盤35.0rpmの回転速度で回転させ、キャリアを-8.3rpmの回転速度で回転させながら、30~120分間、両面研磨を行なった。
ウェハ用平坦度検査装置ナノメトロ・300TTによって測定した。研磨速度は、単位時間当たりに研磨によって除去されたシリコンウェハの厚み(μm/分)で評価した。
Claims (3)
- 砥粒を含まずにシリコンウェハを研磨する研磨用組成物であって、
アミン化合物または無機アルカリ化合物からなる研磨促進剤と、
水溶性高分子と、
オキシエチレン基およびオキシプロピレン基がブロック型ポリエーテルに含まれるブロック型化合物とを含む、研磨用組成物。 - 炭酸塩と炭酸水素塩とからなるpH緩衝剤を更に含む、請求項1に記載の研磨用組成物。
- 請求項1または請求項2に記載の研磨用組成物を用いてシリコンウェハを研磨する研磨方法。
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US13/983,278 US20140030897A1 (en) | 2011-02-03 | 2012-02-02 | Polishing composition and polishing method using the same |
KR1020137021964A KR101907229B1 (ko) | 2011-02-03 | 2012-02-02 | 연마용 조성물 및 그것을 이용한 연마 방법 |
SG2013057955A SG192220A1 (en) | 2011-02-03 | 2012-02-02 | Polishing composition and polishing method using the same |
DE112012000662T DE112012000662T5 (de) | 2011-02-03 | 2012-02-02 | Polierzusammensetzung und Polierverfahren unter Verwendung derselben |
JP2012555955A JP5939578B2 (ja) | 2011-02-03 | 2012-02-02 | 研磨用組成物およびそれを用いた研磨方法 |
US14/561,188 US10344187B2 (en) | 2011-02-03 | 2014-12-04 | Polishing composition and polishing method using the same |
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US14/561,188 Division US10344187B2 (en) | 2011-02-03 | 2014-12-04 | Polishing composition and polishing method using the same |
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JP (1) | JP5939578B2 (ja) |
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KR20140019327A (ko) | 2014-02-14 |
TW201235456A (en) | 2012-09-01 |
US20150083962A1 (en) | 2015-03-26 |
KR101907229B1 (ko) | 2018-10-11 |
SG192220A1 (en) | 2013-09-30 |
JPWO2012105651A1 (ja) | 2014-07-03 |
TWI572701B (zh) | 2017-03-01 |
JP5939578B2 (ja) | 2016-06-22 |
DE112012000662T5 (de) | 2013-11-14 |
US20140030897A1 (en) | 2014-01-30 |
US10344187B2 (en) | 2019-07-09 |
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