TWI650410B - 矽晶圓硏磨用組成物 - Google Patents

矽晶圓硏磨用組成物 Download PDF

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Publication number
TWI650410B
TWI650410B TW103117769A TW103117769A TWI650410B TW I650410 B TWI650410 B TW I650410B TW 103117769 A TW103117769 A TW 103117769A TW 103117769 A TW103117769 A TW 103117769A TW I650410 B TWI650410 B TW I650410B
Authority
TW
Taiwan
Prior art keywords
group
polishing
silicon wafer
polymer
containing polymer
Prior art date
Application number
TW103117769A
Other languages
English (en)
Chinese (zh)
Other versions
TW201510197A (zh
Inventor
土屋公亮
丹所久典
市坪大輝
森嘉男
Original Assignee
日商福吉米股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商福吉米股份有限公司 filed Critical 日商福吉米股份有限公司
Publication of TW201510197A publication Critical patent/TW201510197A/zh
Application granted granted Critical
Publication of TWI650410B publication Critical patent/TWI650410B/zh

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Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1436Composite particles, e.g. coated particles
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02024Mirror polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW103117769A 2013-06-07 2014-05-21 矽晶圓硏磨用組成物 TWI650410B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013120328 2013-06-07
JP2013-120328 2013-06-07
JP2014-010836 2014-01-23
JP2014010836 2014-01-23

Publications (2)

Publication Number Publication Date
TW201510197A TW201510197A (zh) 2015-03-16
TWI650410B true TWI650410B (zh) 2019-02-11

Family

ID=52007952

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103117769A TWI650410B (zh) 2013-06-07 2014-05-21 矽晶圓硏磨用組成物

Country Status (8)

Country Link
US (2) US20160122591A1 (OSRAM)
EP (1) EP3007213B1 (OSRAM)
JP (2) JP6037416B2 (OSRAM)
KR (1) KR102239045B1 (OSRAM)
CN (1) CN105264647B (OSRAM)
SG (1) SG11201508398TA (OSRAM)
TW (1) TWI650410B (OSRAM)
WO (1) WO2014196299A1 (OSRAM)

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JP6403324B2 (ja) * 2014-12-25 2018-10-10 花王株式会社 シリコンウェーハ用研磨液組成物
JP6366139B2 (ja) * 2014-12-25 2018-08-01 花王株式会社 シリコンウェーハ用研磨液組成物の製造方法
EP3258483A4 (en) * 2015-02-12 2018-02-28 Fujimi Incorporated Method for polishing silicon wafer and surface treatment composition
US10748778B2 (en) 2015-02-12 2020-08-18 Fujimi Incorporated Method for polishing silicon wafer and surface treatment composition
CN107735471B (zh) * 2015-07-10 2021-02-12 费罗公司 用于抛光有机聚合物基眼用基材的浆液组合物和添加剂以及方法
JP6801964B2 (ja) * 2016-01-19 2020-12-16 株式会社フジミインコーポレーテッド 研磨用組成物及びシリコン基板の研磨方法
US11332640B2 (en) 2016-02-29 2022-05-17 Fujimi Incorporated Polishing composition and polishing method using same
JP6880047B2 (ja) * 2016-09-21 2021-06-02 株式会社フジミインコーポレーテッド 表面処理組成物
KR20190134692A (ko) * 2017-03-31 2019-12-04 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
JP6916039B2 (ja) * 2017-06-05 2021-08-11 Atシリカ株式会社 研磨用組成物
US11421131B2 (en) 2017-11-06 2022-08-23 Fujimi Incorporated Polishing composition and method for producing same
JP7353051B2 (ja) * 2019-03-26 2023-09-29 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
JP7356248B2 (ja) * 2019-03-28 2023-10-04 株式会社フジミインコーポレーテッド リンス用組成物およびリンス方法
CN110922897B (zh) * 2019-11-18 2024-03-08 宁波日晟新材料有限公司 一种用于硅化合物的低雾值无损伤抛光液及其制备方法
JP7512035B2 (ja) * 2019-12-24 2024-07-08 ニッタ・デュポン株式会社 研磨用組成物
JP7752601B2 (ja) * 2020-03-13 2025-10-10 株式会社フジミインコーポレーテッド 研磨用組成物
WO2021182155A1 (ja) * 2020-03-13 2021-09-16 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
JP7562453B2 (ja) 2021-03-12 2024-10-07 キオクシア株式会社 研磨液、研磨装置、及び研磨方法
EP4355836A4 (en) * 2021-06-14 2025-04-09 Entegris, Inc. SANDING HARD SUBSTRATES
CN118985038A (zh) 2022-03-23 2024-11-19 福吉米株式会社 研磨用组合物
JPWO2024195575A1 (OSRAM) * 2023-03-20 2024-09-26
WO2025115883A1 (ja) * 2023-11-28 2025-06-05 大阪有機化学工業株式会社 研磨組成物

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TW200942602A (en) * 2007-11-14 2009-10-16 Showa Denko Kk Polishing composition
TW201346017A (zh) * 2012-04-17 2013-11-16 Kao Corp 矽晶圓用研磨液組合物

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KR100447551B1 (ko) * 1999-01-18 2004-09-08 가부시끼가이샤 도시바 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법
KR20010046395A (ko) * 1999-11-12 2001-06-15 안복현 연마용 조성물
KR100663781B1 (ko) * 2003-01-31 2007-01-02 히다치 가세고교 가부시끼가이샤 Cμρ연마제 및 연마방법
US20090093118A1 (en) 2005-04-14 2009-04-09 Showa Denko K.K. Polishing composition
US20070175104A1 (en) 2005-11-11 2007-08-02 Hitachi Chemical Co., Ltd. Polishing slurry for silicon oxide, additive liquid and polishing method
JPWO2008013226A1 (ja) * 2006-07-28 2009-12-17 昭和電工株式会社 研磨組成物
JP2008091524A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp 金属用研磨液
JP2008181955A (ja) * 2007-01-23 2008-08-07 Fujifilm Corp 金属用研磨液及びそれを用いた研磨方法
KR101564676B1 (ko) * 2008-02-01 2015-11-02 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 이를 이용한 연마 방법
US20110081780A1 (en) * 2008-02-18 2011-04-07 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
US8652350B2 (en) * 2008-02-27 2014-02-18 Jsr Corporation Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method using the same, and method of recycling chemical mechanical polishing aqueous dispersion
CN105368397B (zh) * 2008-04-23 2017-11-03 日立化成株式会社 研磨剂、研磨剂组件及使用该研磨剂的基板研磨方法
JP5413456B2 (ja) * 2009-04-20 2014-02-12 日立化成株式会社 半導体基板用研磨液及び半導体基板の研磨方法
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EP2500929B1 (en) * 2009-11-11 2018-06-20 Kuraray Co., Ltd. Slurry for chemical mechanical polishing and polishing method for substrate using same
JP4772156B1 (ja) 2010-07-05 2011-09-14 花王株式会社 シリコンウエハ用研磨液組成物
KR101907229B1 (ko) * 2011-02-03 2018-10-11 니타 하스 인코포레이티드 연마용 조성물 및 그것을 이용한 연마 방법
SG11201405091TA (en) * 2012-02-21 2014-09-26 Hitachi Chemical Co Ltd Polishing agent, polishing agent set, and substrate polishing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200942602A (en) * 2007-11-14 2009-10-16 Showa Denko Kk Polishing composition
TW201346017A (zh) * 2012-04-17 2013-11-16 Kao Corp 矽晶圓用研磨液組合物

Also Published As

Publication number Publication date
WO2014196299A1 (ja) 2014-12-11
KR20160013896A (ko) 2016-02-05
EP3007213A1 (en) 2016-04-13
CN105264647B (zh) 2018-01-09
CN105264647A (zh) 2016-01-20
EP3007213A4 (en) 2017-02-22
JP2016201557A (ja) 2016-12-01
US20160122591A1 (en) 2016-05-05
EP3007213B1 (en) 2020-03-18
US10745588B2 (en) 2020-08-18
TW201510197A (zh) 2015-03-16
JPWO2014196299A1 (ja) 2017-02-23
KR102239045B1 (ko) 2021-04-12
JP6037416B2 (ja) 2016-12-07
US20170253767A1 (en) 2017-09-07
JP6360108B2 (ja) 2018-07-18
SG11201508398TA (en) 2015-11-27

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