JP6880047B2 - 表面処理組成物 - Google Patents
表面処理組成物 Download PDFInfo
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- JP6880047B2 JP6880047B2 JP2018540908A JP2018540908A JP6880047B2 JP 6880047 B2 JP6880047 B2 JP 6880047B2 JP 2018540908 A JP2018540908 A JP 2018540908A JP 2018540908 A JP2018540908 A JP 2018540908A JP 6880047 B2 JP6880047 B2 JP 6880047B2
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- surface treatment
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- treatment composition
- soluble polymer
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- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 8
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 8
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- 125000002768 hydroxyalkyl group Chemical group 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
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- 125000002463 lignoceryl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- RMIODHQZRUFFFF-UHFFFAOYSA-N methoxyacetic acid Chemical compound COCC(O)=O RMIODHQZRUFFFF-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 125000001802 myricyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- ZQXSMRAEXCEDJD-UHFFFAOYSA-N n-ethenylformamide Chemical compound C=CNC=O ZQXSMRAEXCEDJD-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N n-hexanoic acid Natural products CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- SONHXMAHPHADTF-UHFFFAOYSA-M sodium;2-methylprop-2-enoate Chemical compound [Na+].CC(=C)C([O-])=O SONHXMAHPHADTF-UHFFFAOYSA-M 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- DVUVKWLUHXXIHK-UHFFFAOYSA-N tetraazanium;tetrahydroxide Chemical compound [NH4+].[NH4+].[NH4+].[NH4+].[OH-].[OH-].[OH-].[OH-] DVUVKWLUHXXIHK-UHFFFAOYSA-N 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- UAXOELSVPTZZQG-UHFFFAOYSA-N tiglic acid Natural products CC(C)=C(C)C(O)=O UAXOELSVPTZZQG-UHFFFAOYSA-N 0.000 description 1
- 229910001428 transition metal ion Inorganic materials 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Classifications
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L29/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical; Compositions of hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Compositions of derivatives of such polymers
- C08L29/02—Homopolymers or copolymers of unsaturated alcohols
- C08L29/04—Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
- C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L31/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an acyloxy radical of a saturated carboxylic acid, of carbonic acid or of a haloformic acid; Compositions of derivatives of such polymers
- C08L31/02—Homopolymers or copolymers of esters of monocarboxylic acids
- C08L31/04—Homopolymers or copolymers of vinyl acetate
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/02—Homopolymers or copolymers of acids; Metal or ammonium salts thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
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- C08L33/24—Homopolymers or copolymers of amides or imides
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L39/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Compositions of derivatives of such polymers
- C08L39/04—Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member
- C08L39/06—Homopolymers or copolymers of N-vinyl-pyrrolidones
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
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- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
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- C11D7/34—Organic compounds containing sulfur
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/10—Definition of the polymer structure
- C08G2261/14—Side-groups
- C08G2261/145—Side-chains containing sulfur
- C08G2261/1452—Side-chains containing sulfur containing sulfonyl or sulfonate-groups
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
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- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Landscapes
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- Emergency Medicine (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Detergent Compositions (AREA)
- Dental Preparations (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
Description
上記のように、本発明に係る表面処理組成物は、CMP工程後に使用される。
CMP工程が施される対象である「研磨対象物」は、ケイ素−ケイ素結合と、窒素−ケイ素結合とをいずれも含む。よって、CMP工程が施された「研磨済研磨対象物」も、ケイ素−ケイ素結合と、窒素−ケイ素結合とを含む。また、残留する不純物を除去することによって表面処理される「表面処理対象物」も、ケイ素−ケイ素結合と、窒素−ケイ素結合とを含む。
(ノニオン水溶性高分子(A))
本発明の表面処理組成物は、炭素原子のみ、または炭素原子と窒素原子とからなる主鎖を有するノニオン水溶性高分子(A)を含む。ここで「主鎖」とは、高分子を構成する鎖式化合物の主要な鎖を意味する。本発明のノニオン水溶性高分子(A)の主鎖は、炭素原子のみ、または炭素原子と窒素原子とからなる。かかる実施形態によれば、本発明の所期の効果を効率的に奏することができる。
本発明の表面処理組成物は、アニオン水溶性高分子(B)を含み、前記アニオン水溶性高分子(B)は、炭素原子のみからなる主鎖と、側鎖とを含み、当該側鎖は、前記炭素原子のみからなる主鎖に結合し、かつ、スルホン酸基もしくはその塩の基またはカルボキシル基もしくはその塩の基を有する。かような表面処理組成物が、本発明の所期の効果を奏するメカニズムは以下のとおりと推測される。無論、本発明の保護範囲がかかるメカニズムに制限されない。すなわち、アニオン水溶性高分子(B)は分散剤として機能し、研磨済研磨対象物に残留する不純物を除去するものと推測される。なお、「側鎖」とは、「主鎖」から枝分かれしている鎖を言う。
本発明の表面処理組成物は、pHが9.0未満である。pHが9.0以上であると、本発明の所期の効果を奏することができない。なお、pHの値は、実施例の方法で測定された値を採用するものとする。
本発明の一形態に係る表面処理組成物は、通常、分散媒(溶媒)を含む。分散媒は、各成分を分散または溶解させる機能を有する。分散媒は、水のみであることがより好ましい。また、分散媒は、各成分の分散または溶解のために、水と有機溶媒との混合溶媒であってもよい。
本発明の一形態に係る表面処理組成物は、本発明の効果を阻害しない範囲内において、必要に応じて、他の添加剤を任意の割合で含有していてもよい。ただし、不純物の原因となるため、その添加量はできる限り少ないことが好ましく、含まないことがより好ましい。他の添加剤としては、例えば、防腐剤、溶存ガス、還元剤、酸化剤等が挙げられる。
なお、本発明においては、炭素原子のみ、または炭素原子と窒素原子とからなる主鎖を有するノニオン水溶性高分子(A)と;炭素原子のみからなる主鎖と、当該炭素原子のみからなる主鎖に結合している、スルホン酸基もしくはその塩を有する基またはカルボキシル基もしくはその塩を有する基を有する側鎖とを有するアニオン水溶性高分子(B)と;を混合させること、および、pHを9.0未満とすることを有する、ケイ素−ケイ素結合と、窒素−ケイ素結合とを含む、研磨済研磨対象物の表面処理に用いられる、表面処理組成物の製造方法が提供される。
上記のように、本発明の表面処理組成物を用いて、研磨済研磨対象物の表面から不純物を除去することによって、当該研磨済研磨対象物(基板)表面の表面状態を変化させる。その方法を「表面処理方法」と称する。よって、本発明においては、上記表面処理組成物を用いて、研磨済研磨対象物の表面処理を行うことを有する、研磨済研磨対象物の表面処理方法も提供される。
本発明においては、水による水洗工程を、本発明の表面処理方法の前、後またはその両方において行ってもよい。
本発明において、CMP工程が施される対象である研磨対象物は、ケイ素−ケイ素結合と、窒素−ケイ素結合とを含むが、好ましくは、半導体基板として供されることを意図している。CMP工程後の研磨済研磨対象物の表面には、不純物が残留するが、本発明の表面処理組成物で、研磨済研磨対象物表面のディフェクトを十分に除去して半導体基板を製造することによって、半導体の電気特性に悪影響を与えることなく、デバイスの信頼性を向上させることができる。
研磨対象物として、12インチのポリシリコンウェハ(厚さ:20×103Å)および12インチの窒化ケイ素ウェハ(厚さ:3×103Å)を準備し、これら研磨対象物をそれぞれ下記の研磨用スラリーAで下記の研磨条件で研磨することによって、それぞれの研磨済研磨対象物を得た。
各原料を、混合温度:約25℃、混合時間:約10分で、純水中で混合することによって、砥粒(コロイダルシリカ;平均一次粒子径:35nm 平均二次粒子径:70nm)2質量%と、PVP0.1質量%とを含む、スラリーAを得た。
研磨装置:荏原製作所製 FREX 300E
研磨パッド:Dow IC1010
ヘッド回転数:91rpm
研磨定盤回転数:90rpm
研磨済研磨対象物と、研磨パッドとの圧力:2psi
研磨用組成物供給量:300ml/分
研磨用組成物の供給:掛け流し
研磨時間:1分。
(表面処理組成物の調製)
成分1として表1に示されるPVA(成分(A))と、成分2として表1に示されるポリ(メタクリル酸ナトリウム塩)(成分(B))と、pH調整剤として硝酸と、を表1に示される組成となるように、純水中で混合することによって、表面処理組成物を調製した(混合温度:約25℃、混合時間:約3分)。なお、実施例、比較例で用いた「PVA」のけん化度は、95%以上であった。
上記で準備した各研磨済研磨対象物を、上記で調製した表面処理組成物を用いて、下記表面処理条件によって、表面処理を行った。
表面処理装置:荏原製作所製 FREX 300E
研磨パッド:Dow IC1010
ヘッド回転数:61rpm
定盤回転数:60rpm
研磨済研磨対象物と、研磨パッドとの圧力:1psi
表面処理組成物供給量:300ml/分
表面処理組成物の供給:掛け流し
表面処理時間:1分。
表面処理を行った面を、ポリビニルアルコール製ブラシを使用して、純水を使って、回転数100rpmで、50秒間水洗を行った。その後、回転数1500rpmで60秒間、表面処理を行った研磨済研磨対象物を回転させることによって乾燥を行った。
表面処理を行い、水洗を行った後の研磨済研磨対象物である12インチウェハ全面におけるディフェクト(ポリシリコンウェハについては0.23μm以上のもの、窒化ケイ素ウェハについては、0.16μm以上のもの)の数を、KLA TENCOR社製SP−1を使用することによって評価した。
実施例1と同様に、表1に示される成分と、場合によってpH調整剤とを混合することによって、表面処理組成物を調製した。その後、上記と同様の方法で、表面処理、水洗を行い、評価を行った。結果を表1に示す。
本発明の表面処理組成物であれば、ポリシリコンウェハにおけるディフェクトの数が360個以下であり、かつ、窒化ケイ素ウェハにおけるディフェクトの数が820個以下であるため、ケイ素−ケイ素結合および窒素−ケイ素結合のいずれをも有する研磨済研磨対象物表面のディフェクトを十分に除去することが示唆される。これに対し、比較例の組成物を用いると、ポリシリコンウェハにおけるディフェクトの数が360個超であったり、窒化ケイ素ウェハにおけるディフェクトの数が820個超であったりして、ケイ素−ケイ素結合および窒素−ケイ素結合のいずれをも有する研磨済研磨対象物表面のディフェクトを十分に除去することができないことが示唆される。
Claims (10)
- 炭素原子のみ、または炭素原子と窒素原子とからなる主鎖を有するノニオン水溶性高分子(A)と;
炭素原子のみからなる主鎖と、当該炭素原子のみからなる主鎖に結合している、スルホン酸基もしくはその塩を有する基またはカルボキシル基もしくはその塩を有する基を有する側鎖とを有するアニオン水溶性高分子(B)と;
を含有し、
ケイ素−ケイ素結合と、窒素−ケイ素結合とを含む、研磨済研磨対象物の表面処理に用いられる、pHが9.0未満である、表面処理組成物。 - 前記ノニオン水溶性高分子(A)が、ポリビニルアルコール(PVA)、ポリビニルアルコール(PVA)由来の構成単位を構造の一部に含む共重合体、ポリビニルピロリドン(PVP)、ポリビニルピロリドン(PVP)由来の構成単位を構造の一部に含む共重合体、ポリビニルカプロラクタム、ポリビニルカプロラクタム由来の構成単位を構造の一部に含む共重合体、ポリN−ビニルホルムアミドおよびポリN−ビニルホルムアミド由来の構成単位を構造の一部に含む共重合体からなる群から選択される少なくとも1種である、請求項1または2に記載の表面処理組成物。
- 前記ノニオン水溶性高分子(A)が、ポリビニルアルコール(PVA)またはポリビニルアルコール(PVA)由来の構成単位を構造の一部に含む共重合体である、請求項1〜3のいずれか1項に記載の表面処理組成物。
- 前記ポリビニルアルコール(PVA)または前記ポリビニルアルコール(PVA)由来の構成単位を構造の一部に含む共重合体のけん化度が、60%以上である、請求項4に記載の表面処理組成物。
- pHが、7.0未満である、請求項1〜7のいずれか1項に記載の表面処理組成物。
- 請求項1〜8のいずれか1項に記載の表面処理組成物を用いて、研磨済研磨対象物の表面処理を行うことを有する、研磨済研磨対象物の表面処理方法。
- 請求項9に記載の表面処理方法によって、研磨済研磨対象物の表面を処理することを有する、半導体基板の製造方法。
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