JP6023829B2 - セラミックス−金属接合体 - Google Patents
セラミックス−金属接合体 Download PDFInfo
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- JP6023829B2 JP6023829B2 JP2015037977A JP2015037977A JP6023829B2 JP 6023829 B2 JP6023829 B2 JP 6023829B2 JP 2015037977 A JP2015037977 A JP 2015037977A JP 2015037977 A JP2015037977 A JP 2015037977A JP 6023829 B2 JP6023829 B2 JP 6023829B2
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- 229910052751 metal Inorganic materials 0.000 title claims description 60
- 239000002184 metal Substances 0.000 title claims description 60
- 238000000034 method Methods 0.000 claims description 58
- 238000005304 joining Methods 0.000 claims description 53
- 229920005989 resin Polymers 0.000 claims description 21
- 239000011347 resin Substances 0.000 claims description 21
- 229920002050 silicone resin Polymers 0.000 claims description 19
- 239000004925 Acrylic resin Substances 0.000 claims description 15
- 229920000178 Acrylic resin Polymers 0.000 claims description 15
- 239000000919 ceramic Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000012495 reaction gas Substances 0.000 claims description 6
- 238000001816 cooling Methods 0.000 description 50
- 238000010438 heat treatment Methods 0.000 description 46
- 238000004519 manufacturing process Methods 0.000 description 44
- 239000011521 glass Substances 0.000 description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 25
- 238000012545 processing Methods 0.000 description 24
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- 239000007789 gas Substances 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 15
- 239000003507 refrigerant Substances 0.000 description 15
- 229920006015 heat resistant resin Polymers 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 10
- 239000011261 inert gas Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 238000004026 adhesive bonding Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 238000012790 confirmation Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 238000002336 sorption--desorption measurement Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000011156 metal matrix composite Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Description
照)。
アクリル樹脂製の接合シートより発生するガス成分を、ダイナミックヘッドスペース−ガスクロマトグラフ−質量分析(DHS−GC−MS)により分析した。具体的には、アクリル樹脂製の接合シートをチャンバーに設置し、そのチャンバー内を高真空状態とした。続いて、チャンバー内を所定温度(60℃、80℃、100℃、120℃)に加熱し、その状態でキャリアガスを流量500mL/minで流し、発生したガスを吸着剤に捕集し濃縮したあと、ガスクロマトグラフィー質量分析(GC−MS)でガス成分を分析した。なお、質量分析装置のイオン化方式は、電子衝撃法(EI法;70eV)を採用した。分析結果を示すチャートを図8に示す。図8から、この接合シートから発生したガス成分は主に炭化水素化合物であることがわかる。
静電チャック20の一例として、φ297mm、厚み3mmのアルミナ製のプレート22と、φ297mm、厚み18mmのAl製の冷却板28とを、厚み0.15mmのアクリル樹脂製の接合シート32により接着したものを製造した。この静電チャック20を上述した第1の製造手順に準じて製造した。具体的には、Al製の冷却板28に接合シート66を貼り付けた後にプリベイク処理を行った。プリベイク処理は、10Pa以下に減圧された専用の炉の中で、32℃/hrの速度で昇温させ、120℃になったところで温度を一定にし、20時間キープした。その後は4℃/hrの速度で降温させた。その後、接合シート66を貼り付けた冷却板28とプレート22とを接合した。具体的には、位置を合わせてこれらを仮接合した後、両者を耐熱性の樹脂バッグに入れ、樹脂バッグ内を1000Pa以下に脱気した上で樹脂バッグをシールした。次に、このバッグごと仮接合体をオートクレーブ中で加圧加熱処理により接合した。加圧加熱接合条件は100℃で14MPaの気圧下で4時間行った。
実施例1の静電チャック20を、従来法により作製した。具体的には、実施例1のプリベイク処理を実施しなかった点を除いては、実施例1と同様の手順により静電チャック20を作製した。
実施例1と比較例1の静電チャック20をそれぞれ図1に示すようにチャンバー12内に設置し、効果確認試験を行った。静電チャック20の冷却板28の冷媒通路30には、45℃の冷却水を一定量流し、プレート22に埋設された抵抗加熱素子26に電力を供給することで、プレート22の表面温度が所定温度(実施例1は90℃、比較例1は80℃)になるように、抵抗加熱素子26に供給する電力を制御した。プレート22の表面温度は、プレート22の中心に熱電対を接触させて測定した。その結果、制御開始から100時間経過後、比較例1では電力が20%近く降下したのに対し、実施例1では所定温度が高いにも係わらず電力が1%程度しか低下しなかった。そのときの様子を図9に示す。こうした電力の変化は、接合界面に気泡が発生し、プレート22と冷却板28の間の熱伝達が小さくなるように変化していることを意味する。すなわち、チャンバー中で同一の電力を供給した場合、接合界面に気泡が発生した部分でプレート22の表面温度が大きくなるように変化することとなる。さらに、気泡が面内で不均一に発生し、プレート22の表面温度分布が変化することとなる。プレート22の表面の温度もしくは温度分布が変わるとプラズマ中の反応種が大きく変化し、例えば、エッチング工程でウエハー面内のエッチング速度のバラツキが生じ、デバイスの歩留まりが悪くなる。
シャワーヘッド60の一例として、φ430mm、厚み4mmのSiC製のプレート62と、一面がφ430mmで他面がφ450mmの外周テーパー形状で厚みが20mmのAl製の金属電極板64とからなり、これらが厚み0.25mmのシリコン樹脂製の接合シート66により接着されたものを製造した。小穴60aは、φ0.1mmであり、隣り合う間隔が4mmとなるようにした。このシャワーヘッド60を上述した第2の製造手順に準じて製造した。具体的には、SiC製のプレート62に接合シート66を貼り付けた後にプリベイク処理を行った。プリベイク処理は、10Pa以下に減圧された専用の炉の中で、プレート62を10℃/hrの速度で昇温させ、150℃になったところで温度を一定にし、20時間キープした。その後は5℃/hrの速度で降温させた。その後、接合シート66を貼り付けたプレート62と金属電極板64とを接合した。具体的には、位置を合わせてこれらを仮接合した後、両者を耐熱性の樹脂バッグに入れ、樹脂バッグ内を1000Pa以下に脱気した上で樹脂バッグをシールした。次に、このバッグごと仮接合体をオートクレーブ中で加圧加熱処理により接合した。加圧加熱接合条件は100℃で14atmの気圧下で5時間行った。
実施例2のシャワーヘッド60を、従来法により作製した。具体的には、実施例2のプリベイク処理を実施しなかった点を除いては、実施例2と同様の手順によりシャワーヘッド60を作製した。
実施例2と比較例2のシャワーヘッド60をそれぞれ図1に示すチャンバー12内に入れ、効果確認試験を行った。シャワーヘッド60は、チャンバー12に取り付けられた冷却板68に金属電極板64の上面が接触するように配置・固定した。次に冷却板68の冷媒通路72に60℃の冷却水を一定量流し、金属電極板64に埋設されたシースヒーター65に電力を供給することで、シャワーヘッド60のプレートの表面温度が90℃になるように、シースヒーター65に供給する電力を制御した。なお、プレートの表面温度はプレート表面に熱電対をセラミックボンドで固定して測定し温度制御に用いた。その結果、制御開始から70時間経過後、比較例2では電力が8%降下したのに対し、実施例2では電力が3%程度しか低下しなかった。そのときの様子を図10に示す。こうした電力の変化は、シャワーヘッド60のプレート62の表面における温度が大きく変化していることを意味する。すなわち、プラズマからの入熱がプレート62の表面の温度が変わるとプラズマ中の反応種が大きく変化し、例えば、エッチング工程でウエハー面内のエッチング速度のバラツキが生じ、デバイスの歩留まりが悪くなる。実際、比較例2ではエッチング工程の歩留まり(生産総数に対する合格品数の百分率)が88%だったのに対し、実施例2では歩留まりが99%以上であった。
静電チャックのプレートを模擬した透明ガラスにアクリル樹脂製で両面粘着性のある接合シートの片面を貼り付けた。接合シートの他面を暴露したまま、真空乾燥機内に設置し、乾燥機内圧力を10Pa以下(7〜8Pa)に減圧した。続いて、プリベイク処理を行った。すなわち、この圧力を保ちつつ、下記表1に示す処理温度、処理時間で加熱した。プリベイク処理終了後、透明ガラスに貼り付けられた接合シートの上に冷却板を模擬した透明ガラスを載せ、仮接着して耐熱樹脂バッグ中に入れた。そして、耐熱樹脂バッグ中の空気を1000Pa以下に脱気し、そのバッグをシールして気密にしたのちオートクレーブ炉に入れ、100℃、14atmで5時間加熱して一対の透明ガラスを接合シートで接合したガラス−ガラス接合体を得た。ここで、ガラスと接合シートとの接合界面における接着性を観察した。その結果を表1に示す。表1に示すように、プリベイク処理時の温度が110〜130℃では良好に接着していたが、140℃では剥がれなどが発生しており接着性は不良であった。
静電チャックのプレートを模擬した透明ガラスにシリコーン樹脂製で両面粘着性のある接合シートの片面を貼り付けた。接合シートの他面を暴露したまま、真空乾燥機内に設置し、乾燥機内圧力を10Pa以下(7〜8Pa)に減圧した。続いて、プリベイク処理を行った。すなわち、この圧力を保ちつつ、下記表5に示す処理温度、処理時間で加熱した。プリベイク処理終了後、透明ガラスに貼り付けられた接合シートの上に冷却板を模擬した透明ガラスを載せ、仮接着して耐熱樹脂バッグ中に入れた。そして、耐熱樹脂バッグ中の空気を脱気し、そのバッグをシールして気密にしたのちオートクレーブ炉に入れ、100℃、14atmで5時間加熱して一対の透明ガラスを接合シートで接合したガラス−ガラス接合体を得た。ここで、ガラスと接合シートとの接合界面における接着性を観察した。その結果を表5に示す。表5に示すように、プリベイク処理時の温度が120〜170℃では良好に接着していたが、180℃では剥がれなどが発生しており接着性は不良であった。
上記[シリコーン樹脂製シートのプリベイク条件の検討]において、プリベイク処理時の乾燥機の雰囲気を大気とし、1気圧の雰囲気圧力下、170℃で30時間加熱処理した。それ以外は上記[シリコーン樹脂製シートのプリベイク条件の検討]と全く同じ条件でガラス接合体およびAl接合体を作成し、上記評価試験により評価を行った。その結果、ガラス接合体の接合界面に気泡はなく、Al接合体の熱伝導率の変化は3%であった。
Claims (3)
- セラミックス製のプレートと金属製の支持台とを樹脂からなる接合シートで接合した、半導体プロセスにおいて使用する接合体であって、
前記樹脂は、アクリル樹脂又はシリコーン樹脂であり、
120℃,100Paの真空環境下で300時間加熱した場合の前記接合シートの重量変化が50μg/cm2(ここで単位は接合面平方センチあたり)以下である、
セラミックス−金属接合体。 - セラミックス製のプレートと金属製の支持台とを樹脂からなる接合シートで接合した、半導体プロセスにおいて使用する接合体であって、
前記樹脂は、アクリル樹脂又はシリコーン樹脂であり、
120℃,100Paの真空環境下で300時間加熱した場合の前記プレートと前記接合シートとの接合界面や前記支持台と前記接合シートとの接合界面に気泡が発生しない、
セラミックス−金属接合体。 - 前記セラミックス−金属接合体は、半導体プロセスにおいてウエハーを吸着固定するのに使用する静電チャック、又は、半導体プロセスにおいて反応ガスをチャンバー容器に分散供給するのに使用するシャワーヘッドである、
請求項1又は2に記載のセラミックス−金属接合体。
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JPWO2010095720A1 (ja) | 2012-08-30 |
KR20110122826A (ko) | 2011-11-11 |
JP5734834B2 (ja) | 2015-06-17 |
EP2402298A1 (en) | 2012-01-04 |
KR101638646B1 (ko) | 2016-07-11 |
US20120028057A1 (en) | 2012-02-02 |
WO2010095720A1 (ja) | 2010-08-26 |
CN102325739A (zh) | 2012-01-18 |
KR20160020582A (ko) | 2016-02-23 |
EP2402298B1 (en) | 2016-05-11 |
US8361271B2 (en) | 2013-01-29 |
EP2402298A4 (en) | 2013-10-02 |
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