JP6020344B2 - レジストパターン形成方法、塗布、現像装置、記憶媒体 - Google Patents

レジストパターン形成方法、塗布、現像装置、記憶媒体 Download PDF

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Publication number
JP6020344B2
JP6020344B2 JP2013100693A JP2013100693A JP6020344B2 JP 6020344 B2 JP6020344 B2 JP 6020344B2 JP 2013100693 A JP2013100693 A JP 2013100693A JP 2013100693 A JP2013100693 A JP 2013100693A JP 6020344 B2 JP6020344 B2 JP 6020344B2
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Japan
Prior art keywords
resist
heating
wafer
substrate
resist film
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JP2013100693A
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English (en)
Japanese (ja)
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JP2014220471A (ja
JP2014220471A5 (enExample
Inventor
哲夫 福岡
哲夫 福岡
義雄 木村
義雄 木村
豪介 白石
豪介 白石
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2013100693A priority Critical patent/JP6020344B2/ja
Priority to TW103115809A priority patent/TWI607490B/zh
Priority to US14/889,564 priority patent/US10459339B2/en
Priority to PCT/JP2014/062384 priority patent/WO2014181837A1/ja
Publication of JP2014220471A publication Critical patent/JP2014220471A/ja
Publication of JP2014220471A5 publication Critical patent/JP2014220471A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2013100693A 2013-05-10 2013-05-10 レジストパターン形成方法、塗布、現像装置、記憶媒体 Active JP6020344B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013100693A JP6020344B2 (ja) 2013-05-10 2013-05-10 レジストパターン形成方法、塗布、現像装置、記憶媒体
TW103115809A TWI607490B (zh) 2013-05-10 2014-05-02 Photoresist pattern forming method, coating, developing device, memory medium
US14/889,564 US10459339B2 (en) 2013-05-10 2014-05-08 Resist pattern forming method, coating and developing apparatus and storage medium
PCT/JP2014/062384 WO2014181837A1 (ja) 2013-05-10 2014-05-08 レジストパターン形成方法、塗布、現像装置及び記憶媒体

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013100693A JP6020344B2 (ja) 2013-05-10 2013-05-10 レジストパターン形成方法、塗布、現像装置、記憶媒体

Publications (3)

Publication Number Publication Date
JP2014220471A JP2014220471A (ja) 2014-11-20
JP2014220471A5 JP2014220471A5 (enExample) 2015-07-02
JP6020344B2 true JP6020344B2 (ja) 2016-11-02

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JP2013100693A Active JP6020344B2 (ja) 2013-05-10 2013-05-10 レジストパターン形成方法、塗布、現像装置、記憶媒体

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Country Link
US (1) US10459339B2 (enExample)
JP (1) JP6020344B2 (enExample)
TW (1) TWI607490B (enExample)
WO (1) WO2014181837A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7124277B2 (ja) * 2016-12-13 2022-08-24 東京エレクトロン株式会社 光処理装置及び基板処理装置
KR102513167B1 (ko) * 2018-06-15 2023-03-23 매슨 테크놀로지 인크 워크피스의 노광 후 베이크 공정을 위한 방법 및 장치
US12305174B2 (en) 2018-09-04 2025-05-20 Universidad De La Republica Genetically modified bacteria producing three DNA repair enzymes and method for the evaluation of DNA repair activity
US20230152705A1 (en) * 2021-11-17 2023-05-18 Tokyo Electron Limited UV Treatment of EUV Resists

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02230252A (ja) * 1989-03-03 1990-09-12 Nec Corp パターン形成方法
JP2682437B2 (ja) 1994-04-22 1997-11-26 日本電気株式会社 露光方法およびその装置
JP2004327688A (ja) * 2003-04-24 2004-11-18 Nippon Telegr & Teleph Corp <Ntt> レジスト現像方法及びレジスト現像装置
JP4804332B2 (ja) * 2006-12-22 2011-11-02 東京エレクトロン株式会社 ベーキング装置及び基板処理装置
JP4788610B2 (ja) 2007-01-17 2011-10-05 東京エレクトロン株式会社 加熱装置、塗布、現像装置、加熱方法及び記憶媒体
JP5290129B2 (ja) * 2008-12-25 2013-09-18 信越化学工業株式会社 化学増幅ポジ型レジスト組成物及びレジストパターン形成方法
JP4853536B2 (ja) * 2009-03-13 2012-01-11 東京エレクトロン株式会社 塗布、現像装置、塗布、現像方法及び記憶媒体
JP2011099956A (ja) * 2009-11-05 2011-05-19 Toppan Printing Co Ltd レジストのベーク方法及びベーク装置
JP5107372B2 (ja) * 2010-02-04 2012-12-26 東京エレクトロン株式会社 熱処理装置、塗布現像処理システム、熱処理方法、塗布現像処理方法及びその熱処理方法又は塗布現像処理方法を実行させるためのプログラムを記録した記録媒体
JP2011204774A (ja) * 2010-03-24 2011-10-13 Toshiba Corp パターン形成方法および脱水装置
JP5964567B2 (ja) * 2011-09-26 2016-08-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置

Also Published As

Publication number Publication date
JP2014220471A (ja) 2014-11-20
US10459339B2 (en) 2019-10-29
WO2014181837A1 (ja) 2014-11-13
US20160085154A1 (en) 2016-03-24
TW201515061A (zh) 2015-04-16
TWI607490B (zh) 2017-12-01

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