JP6014110B2 - ギャップ充填方法 - Google Patents

ギャップ充填方法 Download PDF

Info

Publication number
JP6014110B2
JP6014110B2 JP2014259265A JP2014259265A JP6014110B2 JP 6014110 B2 JP6014110 B2 JP 6014110B2 JP 2014259265 A JP2014259265 A JP 2014259265A JP 2014259265 A JP2014259265 A JP 2014259265A JP 6014110 B2 JP6014110 B2 JP 6014110B2
Authority
JP
Japan
Prior art keywords
gap
unit
crosslinkable polymer
gap filling
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014259265A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015122504A5 (enExample
JP2015122504A (ja
Inventor
ジェ−ワン・シム
ジン−ホン・パク
ジェ−ボン・リム
ジュン−キュ・ジョ
チェン−バイ・スー
ジョン−グン・パク
ミンキ・リー
フィリップ・ディー・フスタッド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of JP2015122504A publication Critical patent/JP2015122504A/ja
Publication of JP2015122504A5 publication Critical patent/JP2015122504A5/ja
Application granted granted Critical
Publication of JP6014110B2 publication Critical patent/JP6014110B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Formation Of Insulating Films (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2014259265A 2013-12-23 2014-12-22 ギャップ充填方法 Active JP6014110B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361920344P 2013-12-23 2013-12-23
US61/920,344 2013-12-23

Publications (3)

Publication Number Publication Date
JP2015122504A JP2015122504A (ja) 2015-07-02
JP2015122504A5 JP2015122504A5 (enExample) 2016-06-23
JP6014110B2 true JP6014110B2 (ja) 2016-10-25

Family

ID=53533840

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014259265A Active JP6014110B2 (ja) 2013-12-23 2014-12-22 ギャップ充填方法

Country Status (5)

Country Link
US (1) US9558987B2 (enExample)
JP (1) JP6014110B2 (enExample)
KR (2) KR20150075046A (enExample)
CN (1) CN105304550B (enExample)
TW (1) TWI573844B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10163632B2 (en) 2016-12-15 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Material composition and process for substrate modification
KR20210145986A (ko) * 2020-05-26 2021-12-03 에스케이하이닉스 주식회사 평탄화층 형성 방법 및 이를 이용한 패턴 형성 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW299475B (enExample) 1993-03-30 1997-03-01 Siemens Ag
JP3807587B2 (ja) * 1999-07-12 2006-08-09 協和化学工業株式会社 難燃性熱可塑性樹脂組成物及びその成形品
US6461717B1 (en) 2000-04-24 2002-10-08 Shipley Company, L.L.C. Aperture fill
JP4654544B2 (ja) 2000-07-12 2011-03-23 日産化学工業株式会社 リソグラフィー用ギャップフィル材形成組成物
EP1398831A3 (en) 2002-09-13 2008-02-20 Shipley Co. L.L.C. Air gaps formation
KR101158297B1 (ko) 2002-12-26 2012-06-26 닛산 가가쿠 고교 가부시키 가이샤 알칼리 용해형 리소그라피용 갭 필링재 형성조성물
TWI310484B (en) * 2003-02-21 2009-06-01 Nissan Chemical Ind Ltd Composition containing acrylic polymer for forming gap-filling material for lithography
CN101107569B (zh) * 2005-01-21 2011-06-15 日产化学工业株式会社 含有具有被保护的羧基的化合物的形成光刻用下层膜的组合物
EP1691238A3 (en) 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
EP1762895B1 (en) * 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
CN101459106B (zh) * 2007-12-13 2011-01-12 中芯国际集成电路制造(上海)有限公司 浅沟槽隔离结构的形成方法
JP5040839B2 (ja) * 2008-07-18 2012-10-03 Ｊｓｒ株式会社 レジスト下層膜形成組成物
TWI541609B (zh) * 2011-02-17 2016-07-11 富士軟片股份有限公司 填隙組成物、填隙方法以及使用該組成物製造半導體元件的方法

Also Published As

Publication number Publication date
CN105304550A (zh) 2016-02-03
KR20150075046A (ko) 2015-07-02
CN105304550B (zh) 2018-05-08
KR20160119011A (ko) 2016-10-12
US20150348828A1 (en) 2015-12-03
US9558987B2 (en) 2017-01-31
TW201536880A (zh) 2015-10-01
JP2015122504A (ja) 2015-07-02
TWI573844B (zh) 2017-03-11

Similar Documents

Publication Publication Date Title
JP6141913B2 (ja) ギャップ充填方法
TWI573808B (zh) 經引導之自組裝圖案形成方法及組成物
TWI834877B (zh) 光阻劑圖案修整組成物及圖案形成方法
KR102308361B1 (ko) 가교성 폴리머와 하부층 조성물
TWI435178B (zh) 用於微影方法之非共價可交聯材料
JP6742686B2 (ja) ギャップ充填方法
CN106432711B (zh) 用于制备抗蚀剂下层膜的聚合物，含有其的组合物及使用该组合物制造半导体装置的方法
TWI547521B (zh) 硬罩幕組成物和使用所述硬罩幕組成物形成圖案的方法
CN105093833A (zh) 硬掩模组合物和使用所述硬掩模组合物形成图案的方法
JP6014110B2 (ja) ギャップ充填方法
CN106084159B (zh) 聚合物、有机层组合物以及形成图案的方法
KR102092798B1 (ko) 유기막 제조 방법 및 패턴형성방법
TW202330815A (zh) 抑制半導體基板圖案崩塌用之填充膜形成材料及半導體基板之處理方法
TW202521645A (zh) 阻劑下層膜形成用組成物、阻劑下層膜、阻劑下層膜之製造方法、圖案形成方法、及半導體裝置之製造方法

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20150518

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160205

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160209

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160509

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20160509

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160527

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160829

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160913

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160923

R150 Certificate of patent or registration of utility model

Ref document number: 6014110

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250