JP6014110B2 - ギャップ充填方法 - Google Patents
ギャップ充填方法 Download PDFInfo
- Publication number
- JP6014110B2 JP6014110B2 JP2014259265A JP2014259265A JP6014110B2 JP 6014110 B2 JP6014110 B2 JP 6014110B2 JP 2014259265 A JP2014259265 A JP 2014259265A JP 2014259265 A JP2014259265 A JP 2014259265A JP 6014110 B2 JP6014110 B2 JP 6014110B2
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- Prior art keywords
- gap
- unit
- crosslinkable polymer
- gap filling
- composition
- Prior art date
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- 238000011049 filling Methods 0.000 title claims description 78
- 238000000034 method Methods 0.000 title claims description 48
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- 239000000758 substrate Substances 0.000 claims description 26
- 239000002904 solvent Substances 0.000 claims description 19
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- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 9
- 239000003054 catalyst Substances 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
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- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 8
- 125000003118 aryl group Chemical group 0.000 claims description 7
- 239000003431 cross linking reagent Substances 0.000 claims description 6
- 150000001412 amines Chemical class 0.000 claims description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- 125000003107 substituted aryl group Chemical group 0.000 claims description 4
- 125000003342 alkenyl group Chemical group 0.000 claims description 3
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- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 3
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- BVUXDWXKPROUDO-UHFFFAOYSA-N 2,6-di-tert-butyl-4-ethylphenol Chemical compound CCC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 BVUXDWXKPROUDO-UHFFFAOYSA-N 0.000 description 2
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- HCLJOFJIQIJXHS-UHFFFAOYSA-N 2-[2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOCCOC(=O)C=C HCLJOFJIQIJXHS-UHFFFAOYSA-N 0.000 description 2
- CETWDUZRCINIHU-UHFFFAOYSA-N 2-heptanol Chemical compound CCCCCC(C)O CETWDUZRCINIHU-UHFFFAOYSA-N 0.000 description 2
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- KUMXLFIBWFCMOJ-UHFFFAOYSA-N 3,3-dimethylhexane Chemical compound CCCC(C)(C)CC KUMXLFIBWFCMOJ-UHFFFAOYSA-N 0.000 description 2
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- QUZSUMLPWDHKCJ-UHFFFAOYSA-N bisphenol A dimethacrylate Chemical class C1=CC(OC(=O)C(=C)C)=CC=C1C(C)(C)C1=CC=C(OC(=O)C(C)=C)C=C1 QUZSUMLPWDHKCJ-UHFFFAOYSA-N 0.000 description 1
- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 description 1
- CZBZUDVBLSSABA-UHFFFAOYSA-N butylated hydroxyanisole Chemical compound COC1=CC=C(O)C(C(C)(C)C)=C1.COC1=CC=C(O)C=C1C(C)(C)C CZBZUDVBLSSABA-UHFFFAOYSA-N 0.000 description 1
- 235000010354 butylated hydroxytoluene Nutrition 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 239000011243 crosslinked material Substances 0.000 description 1
- FCNNRHVBTGDERH-UHFFFAOYSA-N cyclohexyl 2,4,6-tri(propan-2-yl)benzenesulfonate Chemical compound CC(C)C1=CC(C(C)C)=CC(C(C)C)=C1S(=O)(=O)OC1CCCCC1 FCNNRHVBTGDERH-UHFFFAOYSA-N 0.000 description 1
- OHHPZPDQZMUTCA-UHFFFAOYSA-N cyclohexyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OC1CCCCC1 OHHPZPDQZMUTCA-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- WYACBZDAHNBPPB-UHFFFAOYSA-N diethyl oxalate Chemical compound CCOC(=O)C(=O)OCC WYACBZDAHNBPPB-UHFFFAOYSA-N 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- FBSAITBEAPNWJG-UHFFFAOYSA-N dimethyl phthalate Natural products CC(=O)OC1=CC=CC=C1OC(C)=O FBSAITBEAPNWJG-UHFFFAOYSA-N 0.000 description 1
- 229960001826 dimethylphthalate Drugs 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
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- 239000012527 feed solution Substances 0.000 description 1
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- 150000008131 glucosides Chemical class 0.000 description 1
- 125000003976 glyceryl group Chemical group [H]C([*])([H])C(O[H])([H])C(O[H])([H])[H] 0.000 description 1
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- VPVSTMAPERLKKM-UHFFFAOYSA-N glycoluril Chemical compound N1C(=O)NC2NC(=O)NC21 VPVSTMAPERLKKM-UHFFFAOYSA-N 0.000 description 1
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- 125000001072 heteroaryl group Chemical group 0.000 description 1
- GOKKOFHHJFGZHW-UHFFFAOYSA-N hexyl propanoate Chemical compound CCCCCCOC(=O)CC GOKKOFHHJFGZHW-UHFFFAOYSA-N 0.000 description 1
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- 150000002576 ketones Chemical class 0.000 description 1
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- 150000002739 metals Chemical class 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- VUQUOGPMUUJORT-UHFFFAOYSA-N methyl 4-methylbenzenesulfonate Chemical compound COS(=O)(=O)C1=CC=C(C)C=C1 VUQUOGPMUUJORT-UHFFFAOYSA-N 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- FPVUZQOOXYYCIH-UHFFFAOYSA-N n,n-diethylethanamine;2-dodecylbenzenesulfonic acid Chemical compound CCN(CC)CC.CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O FPVUZQOOXYYCIH-UHFFFAOYSA-N 0.000 description 1
- MBNFBHWUKYINLL-UHFFFAOYSA-N n,n-diethylethanamine;3-dodecylbenzene-1,2-disulfonic acid Chemical compound CCN(CC)CC.CCCCCCCCCCCCC1=CC=CC(S(O)(=O)=O)=C1S(O)(=O)=O MBNFBHWUKYINLL-UHFFFAOYSA-N 0.000 description 1
- 229940017144 n-butyl lactate Drugs 0.000 description 1
- QQZOPKMRPOGIEB-UHFFFAOYSA-N n-butyl methyl ketone Natural products CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000847 nonoxynol Polymers 0.000 description 1
- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 1
- WOFPPJOZXUTRAU-UHFFFAOYSA-N octan-4-ol Chemical compound CCCCC(O)CCC WOFPPJOZXUTRAU-UHFFFAOYSA-N 0.000 description 1
- 229920002113 octoxynol Polymers 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000004010 onium ions Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002931 p-cresols Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- UCUUFSAXZMGPGH-UHFFFAOYSA-N penta-1,4-dien-3-one Chemical compound C=CC(=O)C=C UCUUFSAXZMGPGH-UHFFFAOYSA-N 0.000 description 1
- DSQPRECRRGZSCV-UHFFFAOYSA-N penta-1,4-dien-3-yl(phenyl)silane Chemical compound C=CC([SiH2]c1ccccc1)C=C DSQPRECRRGZSCV-UHFFFAOYSA-N 0.000 description 1
- DBSDMAPJGHBWAL-UHFFFAOYSA-N penta-1,4-dien-3-ylbenzene Chemical compound C=CC(C=C)C1=CC=CC=C1 DBSDMAPJGHBWAL-UHFFFAOYSA-N 0.000 description 1
- VYRLHRGPAOAVTO-UHFFFAOYSA-N penta-1,4-dien-3-ylsilane Chemical compound [SiH3]C(C=C)C=C VYRLHRGPAOAVTO-UHFFFAOYSA-N 0.000 description 1
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 1
- GXOHBWLPQHTYPF-UHFFFAOYSA-N pentyl 2-hydroxypropanoate Chemical compound CCCCCOC(=O)C(C)O GXOHBWLPQHTYPF-UHFFFAOYSA-N 0.000 description 1
- TWSRVQVEYJNFKQ-UHFFFAOYSA-N pentyl propanoate Chemical compound CCCCCOC(=O)CC TWSRVQVEYJNFKQ-UHFFFAOYSA-N 0.000 description 1
- LGUZHRODIJCVOC-UHFFFAOYSA-N perfluoroheptane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F LGUZHRODIJCVOC-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 238000005498 polishing Methods 0.000 description 1
- 229920001983 poloxamer Polymers 0.000 description 1
- 229920000233 poly(alkylene oxides) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 150000008442 polyphenolic compounds Polymers 0.000 description 1
- 235000013824 polyphenols Nutrition 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 150000003138 primary alcohols Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- FBCQUCJYYPMKRO-UHFFFAOYSA-N prop-2-enyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC=C FBCQUCJYYPMKRO-UHFFFAOYSA-N 0.000 description 1
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- DNIAPMSPPWPWGF-UHFFFAOYSA-N propylene glycol Substances CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 102220047090 rs6152 Human genes 0.000 description 1
- 150000003333 secondary alcohols Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- FVEFRICMTUKAML-UHFFFAOYSA-M sodium tetradecyl sulfate Chemical compound [Na+].CCCCC(CC)CCC(CC(C)C)OS([O-])(=O)=O FVEFRICMTUKAML-UHFFFAOYSA-M 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- CXVGEDCSTKKODG-UHFFFAOYSA-N sulisobenzone Chemical compound C1=C(S(O)(=O)=O)C(OC)=CC(O)=C1C(=O)C1=CC=CC=C1 CXVGEDCSTKKODG-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000003509 tertiary alcohols Chemical class 0.000 description 1
- UFHILTCGAOPTOV-UHFFFAOYSA-N tetrakis(ethenyl)silane Chemical compound C=C[Si](C=C)(C=C)C=C UFHILTCGAOPTOV-UHFFFAOYSA-N 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 125000003396 thiol group Chemical class [H]S* 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229920000428 triblock copolymer Polymers 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- ASVFINOJIXQHPX-UHFFFAOYSA-N trifluoromethanesulfonate (2,3,4-triphenylphenyl)sulfanium Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1(=CC=CC=C1)C1=C(C(=C(C=C1)[SH2+])C1=CC=CC=C1)C1=CC=CC=C1 ASVFINOJIXQHPX-UHFFFAOYSA-N 0.000 description 1
- PKRKCDBTXBGLKV-UHFFFAOYSA-N tris(ethenyl)-methylsilane Chemical compound C=C[Si](C)(C=C)C=C PKRKCDBTXBGLKV-UHFFFAOYSA-N 0.000 description 1
- BNCOGDMUGQWFQE-UHFFFAOYSA-N tris(ethenyl)silicon Chemical compound C=C[Si](C=C)C=C BNCOGDMUGQWFQE-UHFFFAOYSA-N 0.000 description 1
- GPRLSGONYQIRFK-MNYXATJNSA-N triton Chemical compound [3H+] GPRLSGONYQIRFK-MNYXATJNSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
- 229960000834 vinyl ether Drugs 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Materials For Photolithography (AREA)
- Formation Of Insulating Films (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
いかなる特定の理論にも束縛されることを望むものではないが、疎水性高分子は、基板の様々な表面との相互作用に、比較的不活性な特質を有すると考えられている。一方で、ヒドロキシルおよびカルボキシル等の親水性基は、典型的には、基板表面と共有結合または非共有結合で相互作用する。親水性基による表面とのそのような相互作用は、被覆工程中に、組成物の効果的なギャップ充填を阻害すると考えられる。疎水性の程度は、グラジエント・ポリマー溶出クロマトグラフィ(Gradient polymer Elution Chromatography)(GPEC)により決定され得る。本発明の好ましいギャップ充填組成物は、GPEC解析によるポリスチレンの保持時間の90%以内に最大ピークを有する。
ΔTo−g=To−Tg。
十分に高いΔTo−gを有する架橋性高分子の選択により、組成物を加熱した際、例えば以下に説明するソフトベーク工程中に、また随意のギャップ充填ベーク(gap filling bake)工程中に、高分子の早期架橋を回避し得る。さらに、本発明による、十分に高いΔTo−gを有する未架橋の架橋性高分子を含有したギャップ充填組成物は、典型的には、極めて良好な平坦化を有する。未架橋の架橋性高分子は、典型的には、ギャップ充填組成物中に、組成物の総固形物に対して60〜95wt%、例えば85〜95wt%、または90〜95wt%の量で存在する。
Claims (13)
- (a)基板の表面に、充填される複数のギャップを備えたレリーフ画像を有する半導体基板を供給すること;
(b)前記レリーフ画像上に、未架橋の架橋性高分子、酸性触媒、架橋剤、および溶剤を含むギャップ充填組成物を塗布すること、ここで前記架橋性高分子が10,000超の重量平均分子量Mwを有し、かつ以下の一般式(I)の第1単位:
以下の一般式(II)の第2単位:
(c)ギャップ充填組成物を前記架橋性高分子に架橋を引き起こす温度で加熱すること、
を含むギャップ充填方法。 - 前記第1単位が、以下の式(I−A)、(I−B)および(1−C):
から選択される1以上の単位から選択される、請求項1に記載の方法。 - 前記第1単位が:
- 前記第2単位が、以下の単位:
- 第2単位が:
- 前記架橋性高分子が、前記一般式(I)および一般式(II)の単位のみからなる、請求項1〜5のいずれか1項に記載の方法。
- 前記ギャップが、50nm未満の幅、および2以上のアスペクト比を有する、請求項1〜6のいずれか1項に記載の方法。
- 前記ギャップ充填組成物を架橋させる前に、ギャップ充填組成物を、前記複数のギャップに充填させる温度で加熱することをさらに含む、請求項1〜7のいずれか1項に記載の方法。
- 前記複数のギャップへの充填のための前記加熱、および架橋のための前記加熱が、単一工程で実施される、請求項8に記載の方法。
- R4は、C1−C12直鎖、分岐、または環状アルキル、およびC6−C15アリールから選択され、このとき少なくとも1水素原子がヒドロキシル基で置換される、請求項1〜9のいずれか一項に記載の方法。
- 前記架橋性高分子が10,000より大きく15,000までの重量平均分子量Mwを有する、請求項1〜10のいずれか一項に記載の方法。
- 前記第2単位が、架橋性高分子中に、当該高分子に対し1〜10mol%の量で存在する、請求項1〜11のいずれか一項に記載の方法。
- (a)基板の表面に、充填される複数のギャップを備えたレリーフ画像を有する半導体基板を供給すること;
(b)前記レリーフ画像上に、未架橋の架橋性高分子、酸性触媒、架橋剤、および溶剤を含むギャップ充填組成物を塗布すること、ここで前記架橋性高分子が以下の一般式(I)の第1単位:
下記から選択される第2単位:
(c)ギャップ充填組成物を前記架橋性高分子に架橋を引き起こす温度で加熱すること、
を含むギャップ充填方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361920344P | 2013-12-23 | 2013-12-23 | |
US61/920,344 | 2013-12-23 |
Publications (3)
Publication Number | Publication Date |
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JP2015122504A JP2015122504A (ja) | 2015-07-02 |
JP2015122504A5 JP2015122504A5 (ja) | 2016-06-23 |
JP6014110B2 true JP6014110B2 (ja) | 2016-10-25 |
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Country Status (5)
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US (1) | US9558987B2 (ja) |
JP (1) | JP6014110B2 (ja) |
KR (2) | KR20150075046A (ja) |
CN (1) | CN105304550B (ja) |
TW (1) | TWI573844B (ja) |
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US10163632B2 (en) * | 2016-12-15 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Material composition and process for substrate modification |
KR20210145986A (ko) * | 2020-05-26 | 2021-12-03 | 에스케이하이닉스 주식회사 | 평탄화층 형성 방법 및 이를 이용한 패턴 형성 방법 |
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TW299475B (ja) | 1993-03-30 | 1997-03-01 | Siemens Ag | |
JP3807587B2 (ja) * | 1999-07-12 | 2006-08-09 | 協和化学工業株式会社 | 難燃性熱可塑性樹脂組成物及びその成形品 |
US6461717B1 (en) * | 2000-04-24 | 2002-10-08 | Shipley Company, L.L.C. | Aperture fill |
JP4654544B2 (ja) | 2000-07-12 | 2011-03-23 | 日産化学工業株式会社 | リソグラフィー用ギャップフィル材形成組成物 |
JP4574145B2 (ja) | 2002-09-13 | 2010-11-04 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | エアギャップ形成 |
EP1586945B1 (en) | 2002-12-26 | 2015-07-29 | Nissan Chemical Industries, Ltd. | Alkali-soluble gap filling material forming composition for lithography |
TWI310484B (en) * | 2003-02-21 | 2009-06-01 | Nissan Chemical Ind Ltd | Composition containing acrylic polymer for forming gap-filling material for lithography |
EP1850180A4 (en) * | 2005-01-21 | 2009-12-30 | Nissan Chemical Ind Ltd | COMPOSITION FOR FORMING A LAYERING LINEOGRAPHY FILM CONTAINING A CARBOXYL PROTECTED COMPOSITION |
EP1691238A3 (en) * | 2005-02-05 | 2009-01-21 | Rohm and Haas Electronic Materials, L.L.C. | Coating compositions for use with an overcoated photoresist |
EP1762895B1 (en) * | 2005-08-29 | 2016-02-24 | Rohm and Haas Electronic Materials, L.L.C. | Antireflective Hard Mask Compositions |
CN101459106B (zh) * | 2007-12-13 | 2011-01-12 | 中芯国际集成电路制造(上海)有限公司 | 浅沟槽隔离结构的形成方法 |
JP5040839B2 (ja) * | 2008-07-18 | 2012-10-03 | Jsr株式会社 | レジスト下層膜形成組成物 |
WO2012111459A1 (en) | 2011-02-17 | 2012-08-23 | Fujifilm Corporation | Gap embedding composition, method of embedding gap and method of producing semiconductor device by using the composition |
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2014
- 2014-12-22 JP JP2014259265A patent/JP6014110B2/ja active Active
- 2014-12-23 TW TW103144924A patent/TWI573844B/zh active
- 2014-12-23 US US14/582,149 patent/US9558987B2/en active Active
- 2014-12-23 KR KR1020140187562A patent/KR20150075046A/ko not_active Application Discontinuation
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Also Published As
Publication number | Publication date |
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US20150348828A1 (en) | 2015-12-03 |
TWI573844B (zh) | 2017-03-11 |
CN105304550B (zh) | 2018-05-08 |
US9558987B2 (en) | 2017-01-31 |
KR20150075046A (ko) | 2015-07-02 |
TW201536880A (zh) | 2015-10-01 |
JP2015122504A (ja) | 2015-07-02 |
CN105304550A (zh) | 2016-02-03 |
KR20160119011A (ko) | 2016-10-12 |
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