CN105304550A - 间隙填充方法 - Google Patents
间隙填充方法 Download PDFInfo
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- CN105304550A CN105304550A CN201410858450.4A CN201410858450A CN105304550A CN 105304550 A CN105304550 A CN 105304550A CN 201410858450 A CN201410858450 A CN 201410858450A CN 105304550 A CN105304550 A CN 105304550A
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- 238000000034 method Methods 0.000 title claims abstract description 62
- 239000000203 mixture Substances 0.000 claims abstract description 112
- 229920000642 polymer Polymers 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000002904 solvent Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 238000011049 filling Methods 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 239000003377 acid catalyst Substances 0.000 claims abstract description 8
- 239000003431 cross linking reagent Substances 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 239000011737 fluorine Substances 0.000 claims description 10
- 229910052731 fluorine Inorganic materials 0.000 claims description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 9
- 125000003118 aryl group Chemical group 0.000 claims description 8
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 6
- 150000001412 amines Chemical class 0.000 claims description 5
- 150000003254 radicals Chemical class 0.000 claims description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- 229920006037 cross link polymer Polymers 0.000 claims description 4
- 125000000524 functional group Chemical group 0.000 claims description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 3
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 claims description 3
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 125000000304 alkynyl group Chemical group 0.000 claims description 3
- 150000001408 amides Chemical class 0.000 claims description 3
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 3
- 125000005842 heteroatom Chemical group 0.000 claims description 3
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 3
- 125000002769 thiazolinyl group Chemical group 0.000 claims description 3
- 229920002554 vinyl polymer Polymers 0.000 claims description 3
- 125000001475 halogen functional group Chemical group 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000004971 Cross linker Substances 0.000 abstract 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 76
- -1 dimethyl allene Chemical class 0.000 description 48
- 239000002253 acid Substances 0.000 description 31
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 31
- 239000004094 surface-active agent Substances 0.000 description 19
- 239000000243 solution Substances 0.000 description 18
- 239000003963 antioxidant agent Substances 0.000 description 13
- 235000006708 antioxidants Nutrition 0.000 description 13
- 239000003795 chemical substances by application Substances 0.000 description 13
- 230000003078 antioxidant effect Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 239000000178 monomer Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- RXGUIWHIADMCFC-UHFFFAOYSA-N 2-Methylpropyl 2-methylpropionate Chemical compound CC(C)COC(=O)C(C)C RXGUIWHIADMCFC-UHFFFAOYSA-N 0.000 description 6
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 239000000376 reactant Substances 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 5
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 125000001624 naphthyl group Chemical group 0.000 description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 5
- XGQJGMGAMHFMAO-UHFFFAOYSA-N 1,3,4,6-tetrakis(methoxymethyl)-3a,6a-dihydroimidazo[4,5-d]imidazole-2,5-dione Chemical compound COCN1C(=O)N(COC)C2C1N(COC)C(=O)N2COC XGQJGMGAMHFMAO-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- 230000009477 glass transition Effects 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229920001223 polyethylene glycol Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 4
- BDHFUVZGWQCTTF-UHFFFAOYSA-N sulfonic acid Chemical compound OS(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-N 0.000 description 4
- 238000009482 thermal adhesion granulation Methods 0.000 description 4
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Natural products CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 3
- 150000003863 ammonium salts Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004305 biphenyl Substances 0.000 description 3
- 235000010290 biphenyl Nutrition 0.000 description 3
- 125000006267 biphenyl group Chemical group 0.000 description 3
- 125000004386 diacrylate group Chemical group 0.000 description 3
- STVZJERGLQHEKB-UHFFFAOYSA-N ethylene glycol dimethacrylate Substances CC(=C)C(=O)OCCOC(=O)C(C)=C STVZJERGLQHEKB-UHFFFAOYSA-N 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000008961 swelling Effects 0.000 description 3
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-heptanol Chemical compound CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 description 2
- JVSWJIKNEAIKJW-UHFFFAOYSA-N 2-Methylheptane Chemical compound CCCCCC(C)C JVSWJIKNEAIKJW-UHFFFAOYSA-N 0.000 description 2
- XFCMNSHQOZQILR-UHFFFAOYSA-N 2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOC(=O)C(C)=C XFCMNSHQOZQILR-UHFFFAOYSA-N 0.000 description 2
- KUDUQBURMYMBIJ-UHFFFAOYSA-N 2-prop-2-enoyloxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC(=O)C=C KUDUQBURMYMBIJ-UHFFFAOYSA-N 0.000 description 2
- KUMXLFIBWFCMOJ-UHFFFAOYSA-N 3,3-dimethylhexane Chemical compound CCCC(C)(C)CC KUMXLFIBWFCMOJ-UHFFFAOYSA-N 0.000 description 2
- LAIUFBWHERIJIH-UHFFFAOYSA-N 3-Methylheptane Chemical compound CCCCC(C)CC LAIUFBWHERIJIH-UHFFFAOYSA-N 0.000 description 2
- 241001093575 Alma Species 0.000 description 2
- 102100026735 Coagulation factor VIII Human genes 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 101000911390 Homo sapiens Coagulation factor VIII Proteins 0.000 description 2
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- JKRZOJADNVOXPM-UHFFFAOYSA-N Oxalic acid dibutyl ester Chemical compound CCCCOC(=O)C(=O)OCCCC JKRZOJADNVOXPM-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- OKKRPWIIYQTPQF-UHFFFAOYSA-N Trimethylolpropane trimethacrylate Chemical compound CC(=C)C(=O)OCC(CC)(COC(=O)C(C)=C)COC(=O)C(C)=C OKKRPWIIYQTPQF-UHFFFAOYSA-N 0.000 description 2
- 238000007171 acid catalysis Methods 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- VLLNJDMHDJRNFK-UHFFFAOYSA-N adamantan-1-ol Chemical compound C1C(C2)CC3CC2CC1(O)C3 VLLNJDMHDJRNFK-UHFFFAOYSA-N 0.000 description 2
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- BTMVHUNTONAYDX-UHFFFAOYSA-N butyl propionate Chemical compound CCCCOC(=O)CC BTMVHUNTONAYDX-UHFFFAOYSA-N 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 239000011243 crosslinked material Substances 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- FLKPEMZONWLCSK-UHFFFAOYSA-N diethyl phthalate Chemical compound CCOC(=O)C1=CC=CC=C1C(=O)OCC FLKPEMZONWLCSK-UHFFFAOYSA-N 0.000 description 2
- 238000010828 elution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- GAEKPEKOJKCEMS-UHFFFAOYSA-N gamma-valerolactone Chemical compound CC1CCC(=O)O1 GAEKPEKOJKCEMS-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- VPVSTMAPERLKKM-UHFFFAOYSA-N glycoluril Chemical compound N1C(=O)NC2NC(=O)NC21 VPVSTMAPERLKKM-UHFFFAOYSA-N 0.000 description 2
- 125000001072 heteroaryl group Chemical group 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- QNVRIHYSUZMSGM-UHFFFAOYSA-N hexan-2-ol Chemical compound CCCCC(C)O QNVRIHYSUZMSGM-UHFFFAOYSA-N 0.000 description 2
- ZOCHHNOQQHDWHG-UHFFFAOYSA-N hexan-3-ol Chemical compound CCCC(O)CC ZOCHHNOQQHDWHG-UHFFFAOYSA-N 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- XAOGXQMKWQFZEM-UHFFFAOYSA-N isoamyl propanoate Chemical compound CCC(=O)OCCC(C)C XAOGXQMKWQFZEM-UHFFFAOYSA-N 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- CRSOQBOWXPBRES-UHFFFAOYSA-N neopentane Chemical compound CC(C)(C)C CRSOQBOWXPBRES-UHFFFAOYSA-N 0.000 description 2
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 2
- RZJRJXONCZWCBN-UHFFFAOYSA-N octadecane Chemical compound CCCCCCCCCCCCCCCCCC RZJRJXONCZWCBN-UHFFFAOYSA-N 0.000 description 2
- NMRPBPVERJPACX-UHFFFAOYSA-N octan-3-ol Chemical compound CCCCCC(O)CC NMRPBPVERJPACX-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 235000019260 propionic acid Nutrition 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 2
- 150000003333 secondary alcohols Chemical class 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000011877 solvent mixture Substances 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MCVVDMSWCQUKEV-UHFFFAOYSA-N (2-nitrophenyl)methyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC1=CC=CC=C1[N+]([O-])=O MCVVDMSWCQUKEV-UHFFFAOYSA-N 0.000 description 1
- DLDWUFCUUXXYTB-UHFFFAOYSA-N (2-oxo-1,2-diphenylethyl) 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OC(C=1C=CC=CC=1)C(=O)C1=CC=CC=C1 DLDWUFCUUXXYTB-UHFFFAOYSA-N 0.000 description 1
- JCZPMGDSEAFWDY-SQOUGZDYSA-N (2r,3s,4r,5r)-2,3,4,5,6-pentahydroxyhexanamide Chemical compound NC(=O)[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO JCZPMGDSEAFWDY-SQOUGZDYSA-N 0.000 description 1
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 1
- WVAFEFUPWRPQSY-UHFFFAOYSA-N 1,2,3-tris(ethenyl)benzene Chemical compound C=CC1=CC=CC(C=C)=C1C=C WVAFEFUPWRPQSY-UHFFFAOYSA-N 0.000 description 1
- ZJQIXGGEADDPQB-UHFFFAOYSA-N 1,2-bis(ethenyl)-3,4-dimethylbenzene Chemical group CC1=CC=C(C=C)C(C=C)=C1C ZJQIXGGEADDPQB-UHFFFAOYSA-N 0.000 description 1
- QLLUAUADIMPKIH-UHFFFAOYSA-N 1,2-bis(ethenyl)naphthalene Chemical compound C1=CC=CC2=C(C=C)C(C=C)=CC=C21 QLLUAUADIMPKIH-UHFFFAOYSA-N 0.000 description 1
- VUMCUSHVMYIRMB-UHFFFAOYSA-N 1,3,5-tri(propan-2-yl)benzene Chemical compound CC(C)C1=CC(C(C)C)=CC(C(C)C)=C1 VUMCUSHVMYIRMB-UHFFFAOYSA-N 0.000 description 1
- SAMJGBVVQUEMGC-UHFFFAOYSA-N 1-ethenoxy-2-(2-ethenoxyethoxy)ethane Chemical compound C=COCCOCCOC=C SAMJGBVVQUEMGC-UHFFFAOYSA-N 0.000 description 1
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 1
- LFNVRNWBMJBTKZ-UHFFFAOYSA-N 1-fluorohexan-1-ol Chemical compound CCCCCC(O)F LFNVRNWBMJBTKZ-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- JFTCNGBUEXGKNZ-UHFFFAOYSA-N 1-tert-butyl-2-(trifluoromethyl)benzene Chemical compound CC(C)(C)C1=CC=CC=C1C(F)(F)F JFTCNGBUEXGKNZ-UHFFFAOYSA-N 0.000 description 1
- KGRVJHAUYBGFFP-UHFFFAOYSA-N 2,2'-Methylenebis(4-methyl-6-tert-butylphenol) Chemical compound CC(C)(C)C1=CC(C)=CC(CC=2C(=C(C=C(C)C=2)C(C)(C)C)O)=C1O KGRVJHAUYBGFFP-UHFFFAOYSA-N 0.000 description 1
- VUBUXALTYMBEQO-UHFFFAOYSA-N 2,2,3,3,3-pentafluoro-1-phenylpropan-1-one Chemical compound FC(F)(F)C(F)(F)C(=O)C1=CC=CC=C1 VUBUXALTYMBEQO-UHFFFAOYSA-N 0.000 description 1
- NHEKBXPLFJSSBZ-UHFFFAOYSA-N 2,2,3,3,4,4,5,5-octafluorohexane-1,6-diol Chemical compound OCC(F)(F)C(F)(F)C(F)(F)C(F)(F)CO NHEKBXPLFJSSBZ-UHFFFAOYSA-N 0.000 description 1
- GZBSIABKXVPBFY-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)CO GZBSIABKXVPBFY-UHFFFAOYSA-N 0.000 description 1
- LTMRRSWNXVJMBA-UHFFFAOYSA-L 2,2-diethylpropanedioate Chemical compound CCC(CC)(C([O-])=O)C([O-])=O LTMRRSWNXVJMBA-UHFFFAOYSA-L 0.000 description 1
- RLPGDEORIPLBNF-UHFFFAOYSA-N 2,3,4-trimethylpentane Chemical compound CC(C)C(C)C(C)C RLPGDEORIPLBNF-UHFFFAOYSA-N 0.000 description 1
- FCMUPMSEVHVOSE-UHFFFAOYSA-N 2,3-bis(ethenyl)pyridine Chemical compound C=CC1=CC=CN=C1C=C FCMUPMSEVHVOSE-UHFFFAOYSA-N 0.000 description 1
- MXSKJYLPNPYQHH-UHFFFAOYSA-N 2,4-dimethyl-6-(1-methylcyclohexyl)phenol Chemical compound CC1=CC(C)=C(O)C(C2(C)CCCCC2)=C1 MXSKJYLPNPYQHH-UHFFFAOYSA-N 0.000 description 1
- OPLCSTZDXXUYDU-UHFFFAOYSA-N 2,4-dimethyl-6-tert-butylphenol Chemical compound CC1=CC(C)=C(O)C(C(C)(C)C)=C1 OPLCSTZDXXUYDU-UHFFFAOYSA-N 0.000 description 1
- TUIWMHDSXJWXOH-UHFFFAOYSA-N 2,5-dimethylhexan-3-one Chemical class CC(C)CC(=O)C(C)C TUIWMHDSXJWXOH-UHFFFAOYSA-N 0.000 description 1
- HNURKXXMYARGAY-UHFFFAOYSA-N 2,6-Di-tert-butyl-4-hydroxymethylphenol Chemical compound CC(C)(C)C1=CC(CO)=CC(C(C)(C)C)=C1O HNURKXXMYARGAY-UHFFFAOYSA-N 0.000 description 1
- DKCPKDPYUFEZCP-UHFFFAOYSA-N 2,6-di-tert-butylphenol Chemical class CC(C)(C)C1=CC=CC(C(C)(C)C)=C1O DKCPKDPYUFEZCP-UHFFFAOYSA-N 0.000 description 1
- XRKLXLGVJOJYOO-UHFFFAOYSA-N 2-(2-hydroxyethoxy)ethanol;2-methylprop-2-enoic acid Chemical compound CC(=C)C(O)=O.CC(=C)C(O)=O.OCCOCCO XRKLXLGVJOJYOO-UHFFFAOYSA-N 0.000 description 1
- IEORSVTYLWZQJQ-UHFFFAOYSA-N 2-(2-nonylphenoxy)ethanol Chemical compound CCCCCCCCCC1=CC=CC=C1OCCO IEORSVTYLWZQJQ-UHFFFAOYSA-N 0.000 description 1
- LEJBBGNFPAFPKQ-UHFFFAOYSA-N 2-(2-prop-2-enoyloxyethoxy)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOC(=O)C=C LEJBBGNFPAFPKQ-UHFFFAOYSA-N 0.000 description 1
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 1
- QNVRIHYSUZMSGM-LURJTMIESA-N 2-Hexanol Natural products CCCC[C@H](C)O QNVRIHYSUZMSGM-LURJTMIESA-N 0.000 description 1
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 1
- CKARBJATRQVWJP-UHFFFAOYSA-N 2-[[2-hydroxy-5-methyl-3-(1-phenylethyl)phenyl]methyl]-4-methyl-6-(1-phenylethyl)phenol Chemical compound C=1C(C)=CC(CC=2C(=C(C(C)C=3C=CC=CC=3)C=C(C)C=2)O)=C(O)C=1C(C)C1=CC=CC=C1 CKARBJATRQVWJP-UHFFFAOYSA-N 0.000 description 1
- JTXMVXSTHSMVQF-UHFFFAOYSA-N 2-acetyloxyethyl acetate Chemical compound CC(=O)OCCOC(C)=O JTXMVXSTHSMVQF-UHFFFAOYSA-N 0.000 description 1
- AKNMPWVTPUHKCG-UHFFFAOYSA-N 2-cyclohexyl-6-[(3-cyclohexyl-2-hydroxy-5-methylphenyl)methyl]-4-methylphenol Chemical compound OC=1C(C2CCCCC2)=CC(C)=CC=1CC(C=1O)=CC(C)=CC=1C1CCCCC1 AKNMPWVTPUHKCG-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- AFDOIZVAMVVAKT-UHFFFAOYSA-N 2-ethyl-2-(hydroxymethyl)propane-1,3-diol ethyl prop-2-eneperoxoate Chemical compound CCOOC(=O)C=C.CCOOC(=O)C=C.CCOOC(=O)C=C.CCC(CO)(CO)CO AFDOIZVAMVVAKT-UHFFFAOYSA-N 0.000 description 1
- JIFAWAXKXDTUHW-UHFFFAOYSA-N 2-fluorobenzenesulfonic acid Chemical class OS(=O)(=O)C1=CC=CC=C1F JIFAWAXKXDTUHW-UHFFFAOYSA-N 0.000 description 1
- SGHSRBYSXCNJLP-UHFFFAOYSA-N 2-methyl-4,6-di(nonyl)phenol Chemical compound CCCCCCCCCC1=CC(C)=C(O)C(CCCCCCCCC)=C1 SGHSRBYSXCNJLP-UHFFFAOYSA-N 0.000 description 1
- MHNNAWXXUZQSNM-UHFFFAOYSA-N 2-methylbut-1-ene Chemical compound CCC(C)=C MHNNAWXXUZQSNM-UHFFFAOYSA-N 0.000 description 1
- WJQOZHYUIDYNHM-UHFFFAOYSA-N 2-tert-Butylphenol Chemical compound CC(C)(C)C1=CC=CC=C1O WJQOZHYUIDYNHM-UHFFFAOYSA-N 0.000 description 1
- GPNYZBKIGXGYNU-UHFFFAOYSA-N 2-tert-butyl-6-[(3-tert-butyl-5-ethyl-2-hydroxyphenyl)methyl]-4-ethylphenol Chemical compound CC(C)(C)C1=CC(CC)=CC(CC=2C(=C(C=C(CC)C=2)C(C)(C)C)O)=C1O GPNYZBKIGXGYNU-UHFFFAOYSA-N 0.000 description 1
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- NMRPBPVERJPACX-QMMMGPOBSA-N 3-Octanol Natural products CCCCC[C@@H](O)CC NMRPBPVERJPACX-QMMMGPOBSA-N 0.000 description 1
- QDWTXRWOKORYQH-UHFFFAOYSA-N 3-bromobenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC(Br)=C1 QDWTXRWOKORYQH-UHFFFAOYSA-N 0.000 description 1
- IQOJIHIRSVQTJJ-UHFFFAOYSA-N 3-chlorobenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC(Cl)=C1 IQOJIHIRSVQTJJ-UHFFFAOYSA-N 0.000 description 1
- BZGBTLYQQQASEF-UHFFFAOYSA-N 3-dodecylbenzene-1,2-disulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC(S(O)(=O)=O)=C1S(O)(=O)=O BZGBTLYQQQASEF-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical class C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 description 1
- VSAWBBYYMBQKIK-UHFFFAOYSA-N 4-[[3,5-bis[(3,5-ditert-butyl-4-hydroxyphenyl)methyl]-2,4,6-trimethylphenyl]methyl]-2,6-ditert-butylphenol Chemical compound CC1=C(CC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)C(C)=C(CC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)C(C)=C1CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 VSAWBBYYMBQKIK-UHFFFAOYSA-N 0.000 description 1
- DBCAQXHNJOFNGC-UHFFFAOYSA-N 4-bromo-1,1,1-trifluorobutane Chemical compound FC(F)(F)CCCBr DBCAQXHNJOFNGC-UHFFFAOYSA-N 0.000 description 1
- WVYWICLMDOOCFB-UHFFFAOYSA-N 4-methyl-2-pentanol Chemical compound CC(C)CC(C)O WVYWICLMDOOCFB-UHFFFAOYSA-N 0.000 description 1
- ZDTXQHVBLWYPHS-UHFFFAOYSA-N 4-nitrotoluene-2-sulfonic acid Chemical compound CC1=CC=C([N+]([O-])=O)C=C1S(O)(=O)=O ZDTXQHVBLWYPHS-UHFFFAOYSA-N 0.000 description 1
- YLKCHWCYYNKADS-UHFFFAOYSA-N 5-hydroxynaphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(O)=CC=CC2=C1S(O)(=O)=O YLKCHWCYYNKADS-UHFFFAOYSA-N 0.000 description 1
- YCPXWRQRBFJBPZ-UHFFFAOYSA-N 5-sulfosalicylic acid Chemical compound OC(=O)C1=CC(S(O)(=O)=O)=CC=C1O YCPXWRQRBFJBPZ-UHFFFAOYSA-N 0.000 description 1
- HWTDMFJYBAURQR-UHFFFAOYSA-N 80-82-0 Chemical compound OS(=O)(=O)C1=CC=CC=C1[N+]([O-])=O HWTDMFJYBAURQR-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- ORILYTVJVMAKLC-UHFFFAOYSA-N Adamantane Natural products C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 1
- DJHGAFSJWGLOIV-UHFFFAOYSA-K Arsenate3- Chemical compound [O-][As]([O-])([O-])=O DJHGAFSJWGLOIV-UHFFFAOYSA-K 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 1
- HOUMTFJCAYUBQX-UHFFFAOYSA-N C(C)(C)(C)C1=C(C(=CC(=C1O)C(C)(C)C)C(C)C)N Chemical compound C(C)(C)(C)C1=C(C(=CC(=C1O)C(C)(C)C)C(C)C)N HOUMTFJCAYUBQX-UHFFFAOYSA-N 0.000 description 1
- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 description 1
- AQZGPSLYZOOYQP-UHFFFAOYSA-N Diisoamyl ether Chemical compound CC(C)CCOCCC(C)C AQZGPSLYZOOYQP-UHFFFAOYSA-N 0.000 description 1
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 1
- PNCUGKUBQZIJKN-UHFFFAOYSA-N NC[Si](C=C)(C=C)C1=CC=CC=C1 Chemical compound NC[Si](C=C)(C=C)C1=CC=CC=C1 PNCUGKUBQZIJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical class CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- INXWLSDYDXPENO-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(CO)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C INXWLSDYDXPENO-UHFFFAOYSA-N 0.000 description 1
- FHLPGTXWCFQMIU-UHFFFAOYSA-N [4-[2-(4-prop-2-enoyloxyphenyl)propan-2-yl]phenyl] prop-2-enoate Chemical compound C=1C=C(OC(=O)C=C)C=CC=1C(C)(C)C1=CC=C(OC(=O)C=C)C=C1 FHLPGTXWCFQMIU-UHFFFAOYSA-N 0.000 description 1
- YGCOKJWKWLYHTG-UHFFFAOYSA-N [[4,6-bis[bis(hydroxymethyl)amino]-1,3,5-triazin-2-yl]-(hydroxymethyl)amino]methanol Chemical compound OCN(CO)C1=NC(N(CO)CO)=NC(N(CO)CO)=N1 YGCOKJWKWLYHTG-UHFFFAOYSA-N 0.000 description 1
- YVQSGSOMMFSORT-UHFFFAOYSA-N [[4,6-bis[bis(hydroxymethyl)amino]-1,3,5-triazin-2-yl]-(hydroxymethyl)amino]methanol;1,3,5-triazine-2,4,6-triamine Chemical compound NC1=NC(N)=NC(N)=N1.OCN(CO)C1=NC(N(CO)CO)=NC(N(CO)CO)=N1 YVQSGSOMMFSORT-UHFFFAOYSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- OHBRHBQMHLEELN-UHFFFAOYSA-N acetic acid;1-butoxybutane Chemical class CC(O)=O.CCCCOCCCC OHBRHBQMHLEELN-UHFFFAOYSA-N 0.000 description 1
- RDURTRDFNKIFKC-UHFFFAOYSA-N acetic acid;1-butoxypropan-2-ol Chemical class CC(O)=O.CCCCOCC(C)O RDURTRDFNKIFKC-UHFFFAOYSA-N 0.000 description 1
- IPSOQTFPIWIGJT-UHFFFAOYSA-N acetic acid;1-propoxypropane Chemical class CC(O)=O.CCCOCCC IPSOQTFPIWIGJT-UHFFFAOYSA-N 0.000 description 1
- GTYLEVMOSBBKCQ-UHFFFAOYSA-N acetic acid;2-(2-ethoxyethoxy)ethanol Chemical class CC(O)=O.CCOCCOCCO GTYLEVMOSBBKCQ-UHFFFAOYSA-N 0.000 description 1
- JQICEOPIRHDDER-UHFFFAOYSA-N acetic acid;2-(2-methoxyethoxy)ethanol Chemical class CC(O)=O.COCCOCCO JQICEOPIRHDDER-UHFFFAOYSA-N 0.000 description 1
- JIMPAYYJPMENLQ-UHFFFAOYSA-N acetic acid;2-(2-methoxypropoxy)propan-1-ol Chemical class CC(O)=O.COC(C)COC(C)CO JIMPAYYJPMENLQ-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 230000002152 alkylating effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 229940000489 arsenate Drugs 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- GDCXBZMWKSBSJG-UHFFFAOYSA-N azane;4-methylbenzenesulfonic acid Chemical compound [NH4+].CC1=CC=C(S([O-])(=O)=O)C=C1 GDCXBZMWKSBSJG-UHFFFAOYSA-N 0.000 description 1
- JXLHNMVSKXFWAO-UHFFFAOYSA-N azane;7-fluoro-2,1,3-benzoxadiazole-4-sulfonic acid Chemical compound N.OS(=O)(=O)C1=CC=C(F)C2=NON=C12 JXLHNMVSKXFWAO-UHFFFAOYSA-N 0.000 description 1
- 229940077388 benzenesulfonate Drugs 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-M benzenesulfonate Chemical compound [O-]S(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-M 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- VCCBEIPGXKNHFW-UHFFFAOYSA-N biphenyl-4,4'-diol Chemical group C1=CC(O)=CC=C1C1=CC=C(O)C=C1 VCCBEIPGXKNHFW-UHFFFAOYSA-N 0.000 description 1
- QRHCILLLMDEFSD-UHFFFAOYSA-N bis(ethenyl)-dimethylsilane Chemical compound C=C[Si](C)(C)C=C QRHCILLLMDEFSD-UHFFFAOYSA-N 0.000 description 1
- YQOTVKVZLFHCKW-UHFFFAOYSA-N bis(ethenyl)-methylsilane Chemical compound C=C[SiH](C)C=C YQOTVKVZLFHCKW-UHFFFAOYSA-N 0.000 description 1
- PMSZNCMIJVNSPB-UHFFFAOYSA-N bis(ethenyl)silicon Chemical compound C=C[Si]C=C PMSZNCMIJVNSPB-UHFFFAOYSA-N 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical class CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229940125898 compound 5 Drugs 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- VNIRPVRPOVWGAQ-UHFFFAOYSA-N cyclohexane ethene Chemical compound C1CCCCC1.C=C.C=C.C=C VNIRPVRPOVWGAQ-UHFFFAOYSA-N 0.000 description 1
- OHHPZPDQZMUTCA-UHFFFAOYSA-N cyclohexyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OC1CCCCC1 OHHPZPDQZMUTCA-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000012940 design transfer Methods 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 239000003651 drinking water Substances 0.000 description 1
- 235000020188 drinking water Nutrition 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- UVCJGUGAGLDPAA-UHFFFAOYSA-N ensulizole Chemical compound N1C2=CC(S(=O)(=O)O)=CC=C2N=C1C1=CC=CC=C1 UVCJGUGAGLDPAA-UHFFFAOYSA-N 0.000 description 1
- 229960000655 ensulizole Drugs 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- XEQQKESPDZRKQB-UHFFFAOYSA-N ethenyl-dimethyl-silyloxysilane Chemical compound [SiH3]O[Si](C)(C)C=C XEQQKESPDZRKQB-UHFFFAOYSA-N 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 238000007046 ethoxylation reaction Methods 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 229960005082 etohexadiol Drugs 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229930182478 glucoside Natural products 0.000 description 1
- 150000008131 glucosides Chemical class 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- LHGVFZTZFXWLCP-UHFFFAOYSA-N guaiacol Chemical compound COC1=CC=CC=C1O LHGVFZTZFXWLCP-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 229920001600 hydrophobic polymer Polymers 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- UTEFBSAVJNEPTR-RGEXLXHISA-N loprazolam Chemical compound C1CN(C)CCN1\C=C/1C(=O)N2C3=CC=C([N+]([O-])=O)C=C3C(C=3C(=CC=CC=3)Cl)=NCC2=N\1 UTEFBSAVJNEPTR-RGEXLXHISA-N 0.000 description 1
- 229960003019 loprazolam Drugs 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- VUQUOGPMUUJORT-UHFFFAOYSA-N methyl 4-methylbenzenesulfonate Chemical compound COS(=O)(=O)C1=CC=C(C)C=C1 VUQUOGPMUUJORT-UHFFFAOYSA-N 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 125000002950 monocyclic group Chemical group 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- 229940017144 n-butyl lactate Drugs 0.000 description 1
- QQZOPKMRPOGIEB-UHFFFAOYSA-N n-butyl methyl ketone Natural products CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical class C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000847 nonoxynol Polymers 0.000 description 1
- WOFPPJOZXUTRAU-UHFFFAOYSA-N octan-4-ol Chemical compound CCCCC(O)CCC WOFPPJOZXUTRAU-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- UCUUFSAXZMGPGH-UHFFFAOYSA-N penta-1,4-dien-3-one Chemical compound C=CC(=O)C=C UCUUFSAXZMGPGH-UHFFFAOYSA-N 0.000 description 1
- DBSDMAPJGHBWAL-UHFFFAOYSA-N penta-1,4-dien-3-ylbenzene Chemical compound C=CC(C=C)C1=CC=CC=C1 DBSDMAPJGHBWAL-UHFFFAOYSA-N 0.000 description 1
- 229940059574 pentaerithrityl Drugs 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- GXOHBWLPQHTYPF-UHFFFAOYSA-N pentyl 2-hydroxypropanoate Chemical compound CCCCCOC(=O)C(C)O GXOHBWLPQHTYPF-UHFFFAOYSA-N 0.000 description 1
- TWSRVQVEYJNFKQ-UHFFFAOYSA-N pentyl propanoate Chemical compound CCCCCOC(=O)CC TWSRVQVEYJNFKQ-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- ROMWNDGABOQKIW-UHFFFAOYSA-N phenyliodanuidylbenzene Chemical compound C=1C=CC=CC=1[I-]C1=CC=CC=C1 ROMWNDGABOQKIW-UHFFFAOYSA-N 0.000 description 1
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000233 poly(alkylene oxides) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 150000008442 polyphenolic compounds Chemical class 0.000 description 1
- 235000013824 polyphenols Nutrition 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 150000003138 primary alcohols Chemical class 0.000 description 1
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- FVEFRICMTUKAML-UHFFFAOYSA-M sodium tetradecyl sulfate Chemical compound [Na+].CCCCC(CC)CCC(CC(C)C)OS([O-])(=O)=O FVEFRICMTUKAML-UHFFFAOYSA-M 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003509 tertiary alcohols Chemical class 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- UFHILTCGAOPTOV-UHFFFAOYSA-N tetrakis(ethenyl)silane Chemical compound C=C[Si](C=C)(C=C)C=C UFHILTCGAOPTOV-UHFFFAOYSA-N 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- 239000012953 triphenylsulfonium Substances 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
- OYZWZRRUXKANGT-UHFFFAOYSA-N tris(ethenyl)-hex-1-enylsilane Chemical compound CCCCC=C[Si](C=C)(C=C)C=C OYZWZRRUXKANGT-UHFFFAOYSA-N 0.000 description 1
- PKRKCDBTXBGLKV-UHFFFAOYSA-N tris(ethenyl)-methylsilane Chemical compound C=C[Si](C)(C=C)C=C PKRKCDBTXBGLKV-UHFFFAOYSA-N 0.000 description 1
- BNCOGDMUGQWFQE-UHFFFAOYSA-N tris(ethenyl)silicon Chemical compound C=C[Si](C=C)C=C BNCOGDMUGQWFQE-UHFFFAOYSA-N 0.000 description 1
- GPRLSGONYQIRFK-MNYXATJNSA-N triton Chemical compound [3H+] GPRLSGONYQIRFK-MNYXATJNSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 230000010148 water-pollination Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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Abstract
间隙填充方法。提供了一种间隙填充方法,所述方法包括:(a)提供半导体衬底,该半导体衬底具有在所述衬底的表面上的浮雕图像,该浮雕图像包括多个待填充间隙;(b)将间隙填充组合物涂覆到该浮雕图像上,其中该间隙填充组合物包含未交联的可交联聚合物、酸催化剂、交联剂和溶剂,其中所述可交联聚合物包括以下通式(I)的第一单元以及以下通式(II)的第二单元;(c)加热该间隙填充组合物到使聚合物交联的温度。
Description
技术领域
本发明一般涉及电子器件的制造。特别的,本发明涉及可应用到半导体器件制造中的间隙填充方法。该方法在填充间隙,诸如用于器件隔离的沟槽时具有特别的用处。
背景技术
在半导体制造工业中,大量的电子器件被制造在半导体衬底上。随着每个新设计节点产生的更高的集成密度,使用越来越小的几何结构将器件封装在一起,且几何结构之间的空间也减小。结果是,长宽比也在增加,带来了各种工艺的挑战。
一种这样的挑战存在于间隙填充工艺,在该工艺中,间隙(例如,沟槽,孔或线之间的空间)被材料填充,以实现平坦化、隔离或其它目的。作为间隙填充工艺的一个示例,浅沟槽隔离(STI)被用于阻止由于器件之间的几何结构和空间小而造成的相邻晶体管之间的漏电流。例如,在US5854112A中描述的一个STI工艺。在该工艺中,通过首先在光刻胶层中成像沟槽图案来形成沟槽结构。该光刻胶图案然后被转移到下面的衬底(例如,硅衬底或衬底上的其它层)上,传统的是通过各向异性干法蚀刻。沟槽然后被诸如氧化硅的电介质材料填充,使用例如化学气相沉积(CVD)或旋涂玻璃(SOG)工艺。通常使用化学机械抛光(CMP)去除过量的电介质材料。
当器件接近亚-20纳米的几何结构,诸如沟槽、孔和其它间隙的功能元件通常具有高长宽比。使用传统方法在没有产生大量空隙的条件下填充这种高长宽比部件是很困难的。空隙的存在会导致不利于器件可靠性和/或产生缺陷的各种问题。在STI工艺的情况下,例如,空隙的形成可导致差的电隔离,导致相邻器件之间的漏电流。为了避免在形成的器件中的缺陷,期望间隙以没有空隙的方式被填充。然而,很难给出减小的尺寸和填充材料以及工艺条件的限制。
在半导体制造工业中,仍然有改进方法的需要,该方法在填充包括具有高长宽比的间隙中是非常有用的。
发明内容
依据本发明的第一方面,提供一种间隙填充方法。该方法包括:(a)提供半导体衬底,该半导体衬底具有在所述衬底的表面上的浮雕图像,该浮雕图像包括多个待填充间隙;(b)将间隙填充组合物施加到该浮雕图像上,其中该间隙填充组合物包含未交联的可交联聚合物、酸催化剂、交联剂和溶剂,其中所述可交联聚合物包括以下通式(I)的第一单元:
其中:R1选自氢、氟、C1-C3烷基和C1-C3氟烷基;以及Ar1是一种不含可交联基团的任选取代的芳基;以及以下通式(II)的第二单元:
其中:R3选自氢、氟、C1-C3烷基和C1-C3氟烷基;且R4选自任选取代的C1-C12线性、支链或环状烷基,以及任选取代的C6-C15芳基,任选含有杂原子,其中至少一个氢原子被由独立地选自羟基、羧基、硫醇、胺、环氧基、烷氧基、酰胺和乙烯基的官能团取代;和(c)加热该间隙填充组合物到使聚合物交联的温度。该方法在填充高长宽比间隙的半导体器件的制造中特别的适用。
这里所使用的术语的目的仅仅为了描述特定实施例并且不致力于限制本发明。如这里所使用,单数形式“一”和“该”意味着也包括复数形式,除非文本另外清楚的指出。
附图说明
本发明将参考以下附图进行描述,其中类似的参考数字指示类似的特征,并且,其中:
图1A-D说明了依据本发明的第一间隙填充工艺流程;
图2A-F说明了依据本发明的第二间隙填充工艺流程;
图3A-B显示了已填充的沟槽图案的SEM显微镜照片;
图4A-D显示了已填充的沟槽图案的SEM显微镜照片。
具体实施方式
本发明的间隙填充方法包括在衬底表面的浮雕图像上施加间隙填充组合物。该间隙填充组合物包括未交联的可交联聚合物、酸催化剂、交联剂和溶剂,并且可包括一个或多个额外的任意组分。
未交联的可交联聚合物(这里也称为可交联的聚合物)包含以下通式(I)的第一单元:
其中R1选自氢、氟、C1-C3烷基和C1-C3氟代烷基,并且氢是典型的;和Ar1是任意取代的芳基。优选的,Ar1包括1,2或3个芳族碳环和/或杂芳环。优选的,芳基包括单环芳环,更优选苯环。如果存在多个芳环,该环可以是稠合的,例如,萘基或蒽基。芳基是任选取代的,例如被卤素、硝基、氰基、任选取代的C1-C15线性、支链或环状的烷基(例如氟化或未氟化丁基、异丁基、己基、癸基、环己基、金刚烷基和降冰片基)、烯基、炔基、C6-C18芳基(例如,苄基、苯基、萘基或蒽基)以及它们的组合取代。Ar1不含可交联基团,包括例如羟基。
优选的通式(I)的第一单元是选自下式(I-A)、(I-B)和(I-C)的单元:
其中:R1选自氢、氟、C1-C3烷基和C1-C3氟代烷基,并且氢是典型的;R2独立地选自卤素、硝基、氰基和任选取代的C1-C15线性、支链或环状的烷基(例如氟化或未氟化丁基、异丁基、己基、癸基、环己基、金刚烷基和降冰片基)、烯基、炔基,C6-C18芳基(例如,苄基、苯基、萘基和蒽基)以及它们的组合,其中氢是典型的,R2是不含可交联基团,例如,羟基;a是0-5的整数,典型地是0或1;b是从0到7的整数,典型地是0-2,或0或1;和c为0-9的整数,通常为0-3,或0或1。第一单元在调整表面能、光学特性(例如n和k值)和/或未交联的可交联聚合物的玻璃化转变温度方面是非常有用的。
用于第一单元的合适结构括,例如,以下结构:
这些结构中,苯乙烯是优选的。在未交联的可交联聚合物中第一单元通常存在的量为聚合物的30-99mol%,优选80-98mol%。
未交联的可交联聚合物包括以下通式(II)的第二单元:
其中:R3选自氢、氟、C1-C3烷基和C1-C3氟烷基;且R4选自:任选取代的C1-C12线性、支链或环状烷基;以及任选取代的C6-C15芳基(例如苯基、萘基、蒽基),任选含有杂原子;其中至少一个氢原子被由独立地选自羟基、羧基、硫醇、胺、环氧基、烷氧基、酰胺和乙烯基的官能团取代。在这些中,羟基是优选的。在R4的位置,对于所述官能团是不受限制的,并且可以在,例如,伯、仲或叔位置。在这种情况下,例如:羟基,可使用伯、仲或叔醇。
用于第二单元的合适结构包括,例如,以下结构:
在可交联的聚合物中,第二单元典型的存在量为聚合物的1-70mol%,例如1-50mol%、1-20mol%、或1-10mol%。如果所述第一单元相对于第二单元的含量太低,用于小、高长宽比间隙的间隙填充能力将变差,如果过高,则聚合物将溶胀并且由于不充分的交联,耐洗脱性(stripresistance)可能变差。
一方面,所述未交联的可交联聚合物的重复单元仅包括通式(I)和通式(II)的单元,即,聚合物由通式(I)和通式(II)的单元组成。在这种情况下,未交联的可交联聚合物可由单类型通式(I)的单元和单类型通式(II)的单元组成。可选的,该可交联聚合物可以包括不同类型的通式(I)的单元和/或不同类型的通式(II)的单元。
另一方面,该未交联的可交联聚合物可以包括通式(I)和(II)的单元之外的一种或多种其它单元。该聚合物可以,例如,包括一个或多个其它的单元,目的是调整间隙填充组合物的特性,例如,蚀刻速率和溶解度。合适的其它单元包括例如一个或多个选自如下的单元:获得溶解性的(甲基)丙烯酸酯、获得更快蚀刻的乙烯基醚、乙烯基酮和乙烯基酯,优选在侧链上不具有可交联基团。
合适的其它单元包括,例如,以下:
一个或多个附加单元如果存在于该未交联的可交联聚合物中,其基于聚合物的量可以最高达69mol%,优选是5-50mol%。
由于组合物中的可交联聚合物是未交联的,因此其可以更加有效地填充小尺寸、高长宽比间隙,诸如孔、沟槽以及线之间或其它特征之间的空间。相信这是由于与交联的材料相比具有较低的分子量和体积的结果。
未交联的可交联聚合物优选具有类似于聚苯乙烯的疏水特性。不希望受限于任何特定理论,认为疏水性聚合物具有与各种衬底表面相互作用的相对惰性。相比之下,诸如羟基和羧基的亲水基团通常与衬底表面共价或非共价地相互作用。这种通过亲水基团与表面的相互作用被认为在涂覆工艺期间可有效抑制组合物的间隙填充。疏水性的程度可由梯度聚合物洗脱色谱(GPEC)来测定。本发明优选的间隙填充组合物的保留时间在依据GPEC分析的聚苯乙烯的最高峰值的90%以内。
未交联的可交联聚合物通常具有的重均分子量Mw大于6000,例如从6000到30000,优选大于8000,大于9000或大于10000,大于8000到小于20000,典型的从9000到18000以及从10000到15000。优选的分子量将考虑到在合成期间的良率以及相对间隙填充组合物将要接触的使用的溶剂的低溶胀/高抗洗脱性,例如,用于底部抗反射涂层(BARC)、光刻胶和显影材料的溶剂。高溶胀/低抗洗脱性会导致在外涂光致抗蚀剂的图案化期间的图案坍塌。
未交联的可交联聚合物的多分散性(PDI)没有特别的限制。典型的,可交联聚合物的多分散性(PDI)为1.05或更大,典型的从1.05to2.0。
优选地,未交联的可交联聚合物的玻璃化转变温度(Tg)比交流所述聚合物的启示温度(T0)小10℃或者更多,优选小15℃或更大、小20℃或更大或30℃。在本文中,该玻璃化转变温度由差示扫描量热法(DSC,20℃/分钟的增加速率)来测定。这种起始温度和玻璃化转变温度之间的温度差由以下公式确定:
ΔTo-g=To-Tg
通过选择具有足够高ΔTo-g的可交联聚合物,当组合物被加热时,例如,在软烘烤期间以及在任选的下文中描述的间隙填充烘烤工艺期间,可以避免聚合物的过早交联。此外,含有具有足够高的ΔTo-g的未交联的可交联聚合物的依据本发明的间隙填充组合物通常具有良好的平坦化。存在于间隙填充组合物的未交联的可交联聚合物通常基于组合物的总固体的量为60到95wt%,例如为85-95wt%或为90-95wt%。
可用于本发明的方法中的合适的可交联聚合物包括,例如,以下:
用于本发明的交联剂能与任何可交联聚合物经历酸催化交联。合适的交联剂包括,例如,二-、三-、四-、或更高的多官能烯属不饱和单体。本发明中有用的交联剂包括,例如:三乙烯基苯、二乙烯基甲苯;二乙烯基吡啶、二乙烯基萘、二乙烯基二甲苯、二丙烯酸乙二醇酯、三羟甲基丙烷三丙烯酸酯、二甘醇二乙烯基醚、三乙烯基环己烷、甲基丙烯酸烯丙基酯(“ALMA”)、二甲基丙烯酸乙二醇酯(“EGDMA”)、二甲基丙烯酸二乙二醇酯(“DEGDMA”)、二甲基丙烯酸丙二醇酯、二丙烯酸丙二醇酯、三羟甲基丙烷三甲基丙烯酸酯(“TMPTMA”)、二乙烯基苯(“DVB”)、甲基丙烯酸缩水甘油酯、2,2-二甲基丙烷1,3二醇二丙烯酸酯、二丙烯酸1,3-丁二醇酯、二甲基丙烯酸1,3-丁二醇酯、二丙烯酸1,4-丁二醇酯、二丙烯酸二甘醇酯、二甲基丙烯酸二甘醇酯、二丙烯酸1,6-己二醇酯、二甲基丙烯酸1,6-己二醇酯、二丙烯酸三丙二醇酯、二甲基丙烯酸三甘醇酯、二丙烯酸四甘醇酯、聚乙二醇二丙烯酸酯、二甲基丙烯酸四甘醇酯、聚乙二醇二甲基丙烯酸酯、乙氧基化的双酚A二丙烯酸酯、乙氧基化双酚A二甲基丙烯酸酯、二甲基丙烯酸聚乙二醇酯、聚(丁二醇)二丙烯酸酯、季戊四醇三丙烯酸酯、三羟甲基丙烷三乙氧基三丙烯酸酯、甘油丙氧基三丙烯酸酯、季戊四醇四丙烯酸酯、季戊四醇四甲基丙烯酸酯、二季戊四醇单羟基五丙烯酸酯、二乙烯基硅烷、三乙烯基硅烷、二甲基二乙烯基硅烷、二乙烯甲基硅烷、甲基三乙烯基硅烷、二苯基二乙烯基硅烷、二乙烯苯基硅烷、三乙烯基苯基硅烷、二乙烯甲基苯基硅烷、四乙烯基硅烷、二甲基乙烯基二硅氧烷、聚(甲基乙烯基硅氧烷)、聚(乙烯加氢硅氧烷)(poly(vinylhydrosiloxane))、聚(苯基乙烯基硅氧烷)、诸如四甲氧基甘脲和四丁氧基甘脲的四(C1-C8)烷氧基甘脲、以及它们的组合。优选地,交联剂是四-烷氧基烷基甘脲、六羟甲基三聚氰胺(melamine)或具有适合于酸催化交联的多官能团的芳族化合物。合适的交联剂是商业上可获得的。交联剂的含量通常为基于组合物的总固体的4到25wt%,例如从10到22wt%。
用于本发明的酸催化剂包括游离酸和产酸剂。可与本发明的组合物相容并催化聚合物和交联剂的交联的任何游离酸都适用于本发明。游离酸的示例包括但不限于,诸如甲烷磺酸、乙烷磺酸、丙基磺酸、苯基磺酸、甲苯磺酸、十二烷基苯磺酸和三氟甲基磺酸的磺酸。
合适的酸生成剂包括热酸产生剂(TAGs),光酸产生剂(PAGs)以及它们的组合。热酸产生剂是在加热时能够产生酸性部分的化合物。该热酸产生剂可以是非离子型或离子型。合适的非离子热酸生成剂包括,例如,对甲苯磺酸环己基酯、对甲苯磺酸甲酯、2,4,6-三异丙基苯磺酸环己基酯、硝基苄基酯、苯偶姻甲苯磺酸酯、2-硝基苄基甲苯磺酸酯、三(2,3-二溴丙基)-1,3,5-三嗪-2,4,6-三酮、诸如对甲苯磺酸的有机磺酸、十二烷基苯磺酸、草酸、邻苯二甲酸、磷酸、樟脑磺酸、2,4,6-三甲基苯磺酸、三异丙基萘磺酸、5-硝基-邻-甲苯磺酸、5-磺基水杨酸、2,5-二甲基苯磺酸、2-硝基苯磺酸、3-氯苯磺酸、3-溴苯磺酸、2-氟辛基萘磺酸、十二烷基苯磺酸、1-萘酚-5-磺酸、2-甲氧基-4-羟基-5-苯甲酰-苯磺酸的烷基酯、它们的盐以及其组合。合适的离子热酸产生剂包括例如十二烷基苯磺酸三乙胺盐,十二烷基苯二磺酸酸三乙胺盐、对甲苯磺酸-胺盐,磺酸盐,诸如碳环芳基(例如苯基、萘基、蒽基等)和杂芳基(例如噻吩基)磺酸盐、脂肪族磺酸盐和苯磺酸盐。在活化时产生磺酸的化合物通常是合适的。优选的热酸产生剂包括对甲苯磺酸铵盐。
光酸产生剂是当暴露于活化辐射时能够产生酸性部分的化合物。合适的光酸产生剂包括例如硫化物和鎓型化合物。光酸产生剂包括但不限于二苯基碘六氟磷酸盐、二苯基碘六氟砷酸盐、二苯基碘六氟锑酸盐、二苯基对甲氧基苯基三氟甲磺酸酯、二苯基对亚苄基三氟甲磺酸酯、二苯基对异丁基苯基三氟甲磺酸酯、二苯基对叔丁基苯基三氟甲磺酸盐、三苯基锍六氟磷酸盐、三苯基锍六氟砷酸盐、三苯基锍六氟锑酸盐、三苯基锍三氟甲磺酸盐、(4-叔-丁基苯基)四亚甲基锍(3-羟基金刚烷基酯)-四氟丁磺酸)、(4-叔-丁基苯基)四亚甲基锍(金刚烷基酯)-四氟丁磺酸酯)和二丁基萘锍三氟甲磺酸酯。优选的PAG包括四亚甲基锍化合物。
某些光酸产生剂还可以作为热酸产生剂,在暴露于活化辐射或加热时产生酸。以下化合物,例如,可用作PAG或TAG:
当用作TAG时,与铵盐相比,这些化合物提供相对缓慢的交联(高交联起始温度),使得可以实现高ΔTo-g。
酸催化剂的组合都可用于本发明。合适的组合包括例如游离酸与光酸产生剂、游离酸与热酸产生剂或热酸产生剂与光酸产生剂。
合适的酸催化剂是商业上可获得的。酸催化剂为通常存在于组合物中基于组合物的总固体的量为0.1-8wt%,优选约0.5-约5wt%。
间隙填充组合物进一步包括溶剂,该溶剂可以包括单一溶剂或溶剂混合物。为了配制和流延(cast)间隙填充组合物的合适的溶剂材料相对于间隙填充组合物的非溶剂成分表现出非常好的溶解性,但不明显溶解将要接触到间隙填充组合物的基底表面的下层的浮雕图像或其它材料。该溶剂通常选自水、水溶液、有机溶剂及其混合物。该溶剂优选是有机溶剂。用于间隙填充组合物的合适的有机溶剂包括,例如:醇,诸如直链、支链或环状C4-C9一元醇,诸如1-丁醇、2-丁醇、异丁醇、叔丁醇、2-甲基-1-丁醇、1-戊醇、2-戊醇、4-甲基-2-戊醇、1-己醇、1-庚醇、1-辛醇、2-己醇、2-庚醇、2-辛醇、3-己醇、3-庚醇、3-辛醇、4-辛醇;2,2,3,3,4,4-六氟-1-丁醇、2,2,3,3,4,4,5,5-八氟-1-戊醇和2,2,3,3,4,4,5,5,6,6-十氟-1-己醇、和诸如2,2,3,3,4,4-六氟-1,5-戊二醇、2,2,3,3,4,4,5,5-八氟-1,6-己二醇和2,2,3,3,4,4,5,5,6,6,7,7-十二氟-1,8-辛二醇的C5-C9氟化二醇;酯-基溶剂,诸如乙酸烷基酯(诸如乙酸正丁酯)、丙酸酯(诸如丙酸正丁酯,丙酸正戊酯,丙酸正-己基,丙酸正庚酯)、以及丁酸烷基酯(诸如丁酸正丁酯,丁酸异丁酯和异丁酸异丁酯),碳酸二乙酯、乙酸甲酯、乙酸乙酯、γ-丁内酯、γ-戊内酯、乙二醇单甲醚乙酸酯、乙二醇单乙醚乙酸酯、二乙二醇单甲醚乙酸酯、二乙二醇单乙醚乙酸酯、二乙二醇单正丁基醚乙酸酯、丙二醇单甲醚乙酸酯、丙二醇单乙醚乙酸酯、丙二醇一丙基醚乙酸酯、丙二醇单丁醚乙酸酯、二丙二醇单甲醚乙酸酯、二丙二醇单乙醚乙酸酯、乙二醇二乙酸酯、甲氧基三甘醇乙酸酯、丙酸乙酯、丙酸正丁酯、丙酸异戊酯,草酸二乙酯,草酸二正丁酯、乳酸甲酯、乳酸乙酯、乳酸正丁酯、乳酸正戊酯、丙二酸二乙酯、邻苯二甲酸二甲酯、邻苯二甲酸二乙酯、2-羟基异丁酸甲酯等;酮,诸如2,5-二甲基-4-己酮和2,6-二甲基-4-庚酮;脂族烃,诸如正庚烷、正壬烷、正辛烷、正癸烷、2-甲基庚烷、3-甲基庚烷,3,3-二甲基己烷和2,3,4-三甲基戊烷,和诸如全氟庚烷的氟化的脂族烃;醚,如异戊基醚和二丙二醇单甲醚;以及含有一种或多种这些溶剂的混合物。这些溶剂中,丙二醇单甲醚乙酸酯,γ-丁内酯、2-羟基异丁酸甲酯和它们的组合是优选的。间隙填充组合物的溶剂组分一般存在量为基于间隙填充组合物的总重量的80-99wt%,更典型的为90-99wt%或为95-99wt%。
间隙填充组合物可包括一种或多种任选的添加剂,包括,例如,表面活性剂和抗氧化剂。如果使用这种任选的添加剂,每一个通常少量存在于组合物中,例如基于间隙填充组合物的总固体的0.01-10wt%。
典型的表面活性剂包括那些显示出两亲特性,意味着它们可以同时具有亲水性和疏水性。两亲表面活性剂具有亲水端基或基团,其对水具有强烈亲和力和亲有机物并排斥水的长疏水尾。合适的表面活性剂可以是离子型(即,阴离子型、阳离子型)或非离子型。表面活性剂的进一步示例包括硅氧烷表面活性剂、聚(环氧烷)表面活性剂和氟化学表面活性剂。适合的非离子表面活性剂包括,但不限于,辛基和壬基酚乙氧基化物如TRITONTMX-114、X-100、X-45、X-15和诸如TERGITOLTMTMN-6(美国密西根州米德兰德陶氏化学公司)的支链仲醇乙氧基化物。进一步示例性表面活性剂包括醇(伯和仲)乙氧基化物、胺乙氧基化物、糖苷、葡糖胺、聚乙二醇、聚(乙二醇-共-丙二醇),或公开于McCutcheon的乳化剂和洗涤剂,GlenRock,N.J的ManufacturersConfectioners出版公司于2000年出版的北美版《McCutcheon′sEmulsifiersandDetergents》中的其它表面活性剂。非离子表面活性剂还可以是炔二醇衍生物。这些表面活性剂可购自美国宾夕法尼亚州Allentown的空气和化学产品公司,售卖商品名为SURFYNOLTM和DYNOLTM。此外合适的表面活性剂包括诸如三嵌段EO-PO-EO共聚物PLURONICTM25R2、L12l、L123、L3l、L8l、L1O1和P123(巴斯夫公司)的其它聚合化合物。
可以加入抗氧化剂以防止或减少间隙填充组合物中有机材料的氧化。合适的抗氧化剂包括,例如,酚基抗氧化剂、有机酸衍生物组成的抗氧化剂、含硫抗氧化剂、磷基抗氧化剂、胺基抗氧化剂、由胺-醛缩合组成的抗氧化剂以及由胺-酮缩合组成的抗氧化剂。酚基抗氧化剂的示例包括:取代的酚,诸如1-氧基-3-甲基-4-异丙基苯,2,6-二叔丁基苯酚,2,6-二-叔丁基-4-乙基苯酚,2,6-二叔丁基-4-甲基苯酚、4-羟甲基-2,6-二-叔丁基苯酚、丁羟基苯甲醚、2-(1-甲基环己基)-4,6-二甲基苯酚、2,4-二甲基-6-叔丁基苯酚、2-甲基-4,6-二壬基苯酚、2,6-二叔丁基-α-二甲氨基-对甲酚、6-(4-羟基-3,5-二-叔丁基-苯胺基)2,4-双-辛基-硫代-1,3,5-三嗪、正十八烷基-3-(4′-羟基-3′,5′-二-叔-丁基-苯基]丙酸酯,辛基化的苯酚、芳烷基取代的苯酚、烷基化的对甲酚和受阻酚;双-、三-和多酚,如4,4′-二羟基联苯、亚甲基-双[二甲基-4,6-苯酚)、2,2′-亚甲基-双-(4-甲基-6-叔丁基苯酚)、2,2′-亚甲基-双-(4-甲基-6-环己基-苯酚)、2,2′-亚甲基-双-(4-乙基-6-叔丁基苯酚)、4,4′-亚甲基-双-(2,6-二叔丁基苯酚),2,2′-亚甲基-双(6-α-甲基-苄基-对甲酚)、亚甲基-交联的多价苯酚、4,4′-亚丁基双-(3-甲基-6-叔丁基苯酚)、1,1-双-(4-羟基苯基)-环乙烷,2,2′-二羟基-3,3′-二(α-甲基环己基)-5,5′-二甲基-二苯基甲烷、烷基化双酚、受阻双酚、1,3,5-三甲基-2,4,6-三(3,5-二叔丁基-4-羟基苄基)苯、三-(2-甲基-4-羟基-5-叔丁基苯基)丁烷、和四-[亚甲基-3-(3′,5′-二叔丁基-4′-羟苯基)丙酸酯]甲烷。合适的抗氧化剂是商业上可获得的,例如Irganox″抗氧化剂(汽巴特种化学品公司)。
间隙填充组合物可按照已知方法制备。例如,该组合物可以通过下述方法制备:将组合物的固体组分溶解在溶剂组分中。所需组合物的总固体含量将依赖于许多因素,诸如所需的最终层厚度。典型地,所述间隙填充组合物的固体含量为基于组合物的总重量的1-20wt%,例如,为1-10wt%,更典型地为1-5wt%。
依据第一方面的本发明方法现在将参照图1A-D进行描述。附图1A示出了半导体衬底2的横截面。衬底可以是诸如半导体的材料,诸如硅或化合物半导体(例如,III-V或II-VI)、玻璃、石英、陶瓷、铜等。典型地,衬底是半导体硅片,诸如单晶硅,并具有一个或多个层和形成在其表面的图案化部件。形成衬底的部分的层可包括,例如,一个或多个的导电层,诸如铝、铜、钼、钽、钛、钨、这些金属的合金、氮化物或硅化物、掺杂的非晶硅或掺杂的多晶硅形成的层;一个或多个电介质层,诸如氧化硅、氮化硅、氮氧化硅、或金属氧化物形成的层;半导体层,诸如单晶硅、碳层和它们的组合。这些层可以通过各种技术形成,例如化学气相沉积(CVD),诸如等离子体增强CVD、低压CVD或外延生长;物理气相沉积(PVD),诸如溅射或蒸发,电镀,或诸如旋涂的液体涂覆技术。
衬底的最上层包括限定了待填充间隙6的浮雕图像4。待填充的间隙可以存在于衬底材料本身中或衬底材料上形成的层中,并且可以采取各种形式。间隙可以是,例如,沟槽或孔的形式,并且有利地是具有非常窄的宽度并具有高长宽比。
浮雕图像典型的是通过光刻工艺形成,例如,光刻平版印刷或诸如定向装配(DSA)的装配方法。诸如各向异性干法蚀刻法的蚀刻工艺通常用于将形成有浮雕图像和间隙的图案转移到下面的层。间隙可以是,例如,孔,沟槽或线之间或其它部件之间的空间的形式。在所示的实施方式中,这些间隙完全延伸穿过形成浮雕图像的材料层,并暴露下面的衬底。间隙仅部分延伸穿过所述材料层也是允许的。在光刻工艺的情况下,最好使用的曝光辐射的波长小于300nm,诸如248nm、193nm或EUV波长(例如,13.4或13.5nm),或电子束曝光。所述间隙可以是,例如具有高度h和宽度w的沟槽或孔的形式,并且可以具有相对的窄宽度和大高度。依据发明的工艺和组合物适合用于填充具有相对高长宽比的间隙。如本文中使用的,长宽比(AR)被定义为AR=h/w,其中h是间隙高度,w是间隙宽度。典型地,间隙宽度是1nm-200nm,例如,1nm-100nm,1nm-50nm,1nm-25nm或1nm-10nm,优选的小于50nm,例如,小于20nm,小于15nm,小于10nm或小于5nm。长宽比典型的是1-20,例如,2-20或5-20。
如图1B所述,如本文中描述的间隙填充组合物8被施加到晶片表面并覆盖浮雕图像4。通过旋涂、浸涂、辊涂或其它常规涂布技术,将间隙填充组合物涂覆到衬底。在这些中,旋涂是典型的和优选的。根据所利用的特定涂层设备、溶液的粘度、涂覆工具的速度和允许旋转的时间,使用旋涂,调整间隙填充组合物的固体含量以提供期望的膜厚。例如,间隙填充组合物期望的涂覆厚度将取决于将要填充的间隙的几何形状。用于间隙填充组合物8的典型厚度是约200到。
然后在一定的温度和时间下软烘烤间隙填充组合物以将层上的残留溶剂蒸发。软烘烤温度低于起始温度以避免聚合物过早的交联。使用热板或烘箱实施软烘烤,典型的是使用热板。例如,可以在用于涂覆间隙填充组合物的晶片轨道的热板上软烘烤。例如,软烘烤的温度和时间将根据间隙填充组合物的特定组成和厚度。典型的软烘烤温度是约70-150℃,时间是约30-90秒。
参考图1C,在一定的温度和时间下加热组合物,以引起可交联聚合物的交联,从而形成交联的聚合物8′。交联烘烤可以在热板或在烘箱14中实施,典型的使用热板。例如,可以在用于涂覆间隙填充组合物的晶片轨道的热板上实施交联烘烤。例如,交联烘烤的温度和时间将取决于烘烤的间隙填充组合物的特定组成和厚度。典型的交联烘烤温度是约150-300℃,时间是约30秒-3分钟。例如,可以通过单一温度或逐渐提高温度来加热间隙填充组合物实施交联烘烤。软烘烤和交联烘烤可使用同样的加热器在单个工艺中实施,例如,通过软烘烤到交联温度逐渐提高温度。
在间隙填充组合物的交联后,衬底的进一步加工被实施以形成最终的器件,该器件可包括存储(例如,DRAM)或逻辑器件。进一步加工包括,例如,在图1D中所示的衬底上的一个或多个层16的形成,抛光,化学机械平坦化(CMP),离子注入,退火,CVD,PVD,外延生长,电镀和平版印刷技术,诸如DSA和光刻。有利地,将含有溶剂的液体层直接涂覆(例如通过旋涂)在交联的间隙填充组合物上可在与下面的交联材料不互相混合的情况下被实施。
图2A-F示出了根据本发明的进一步方面的一种方法,其中间隙填充组合物8施加到晶片2上不完全填充间隙,如图2B所示。这种情况可能发生,例如,非常细的间隙,高粘度的间隙填充组合物和/或更高分子量的可交联聚合物。根据软烘烤温度、间隙填充组合物和间隙的尺寸与几何形状,如果在软烘烤期间聚合物粘度被严重减小,可发生部分的或完全的间隙填充。除非另外指出,以上描述的图1所示的参考工艺还适用于图2所述的工艺。
当涂覆和轻烘烤之后的间隙填充并不充分时,软烘烤的填充组合物在间隙填充烘烤时被加热到比轻烘烤温度更高温度,并实施一段时间,以有效的使得间隙填充组合物填充多个间隙。如图2C中所示,使用热板或烘箱12实施间隙填充烘烤,典型的使用热板。例如,可以在涂覆间隙填充组合物和软烘烤的晶片轨道的热板上实施间隙填充烘烤。例如,间隙填充烘烤的温度和时间将取决于软烘烤的间隙填充组合物的特定组成和厚度。典型的间隙填充烘烤温度是约150-200℃,时间是约30秒到10分钟。优选的,间隙填充烘烤温度比起始温度低10℃或更多,优选低20℃或更多,或低30℃或更多。优选的,间隙填充烘烤温度比交联烘烤温度低15℃或更多,优选低25℃或更多,或低30℃或更多。在间隙填充烘烤工艺期间,软烘烤的间隙填充组合物8的粘度变得越来越低,以允许材料填充间隙6,如图2C和2D中所示。
参考图2E,组合物然后被在比间隙填充烘烤温度更高的温度下加热,以使得未交联的可交联聚合物进行交联。交联烘烤可以在热板或在烘箱14中实施,典型的使用热板。例如,可以在用于涂覆间隙填充组合物的晶片轨道的热板上实施交联烘烤。例如,交联烘烤的温度和时间将取决于烘烤的间隙填充组合物的特定组合物和厚度。典型的交联烘烤温度是约200-300℃,时间是约30秒到30分钟。任选地,间隙填充烘烤和交联烘烤可以在单个工艺中实施。例如,可使用同一加热工具按顺序实施间隙填充和交联烘烤。例如,可通过连续地倾斜温度或使用台阶式温度实施加热以执行间隙填充和交联烘烤功能。间隙填充工艺之后,实施进一步工艺以形成最终的器件。
以下非限制性的实施例说明本发明。
实施例
实施例1:合成聚乙烯(苯乙烯-共-丙烯酸)
如下制备聚合物供给溶液:将48.14g苯乙烯单体(液体)和1.86g甲基丙烯酸2-羟乙基酯单体(液体)混合在100ml玻璃瓶。轻微摇动瓶子以混合单体,并放入冰浴中,以使单体混合物的温度在冰浴中达到平衡状态。
1.373gV601偶氮引发剂(白色粉末,WakoPureChemicalIndustries,Ltd.)被加入瓶中,摇晃瓶子以完全溶解该引发剂。该瓶子然后被放回到冰浴中。50g1-丁醇被加入到三颈250ml圆底烧瓶中,烧瓶装有温度控制器,并用氮气吹扫烧瓶。含有反应混合物的三颈250ml圆底烧瓶被加热,直到反应混合物的温度达到80℃。单体供给溶液以0.92ml/min的速率供给到反应器中,总供给时间为约60分钟。单体供给完成后,在80℃再维持反应器1小时。终止加热,将反应器冷却到室温同时搅拌。使用甲醇(反应混合物的10倍)将得到的聚合物溶液沉淀,过滤并真空干燥。
实施例2:合成聚乙烯(苯乙烯-共-丙烯酸)
如下制备聚合物供给溶液:将39.79g苯乙烯单体(液体)和10.21g甲基丙烯酸2-羟乙基酯单体(液体)混合在100ml玻璃瓶。轻微摇动瓶子以混合单体,并放入冰浴中,以使单体混合物的温度在冰浴中达到平衡状态。
1.957gV601偶氮引发剂(白色粉末,WakoPureChemicalIndustries,Ltd.)被加入瓶中,摇晃瓶子以完全溶解该引发剂。该瓶子然后被放回到冰浴中。50gl-丁醇被加入到三颈250ml圆底烧瓶中,烧瓶装有温度控制器,并用氮气吹扫烧瓶。含有反应混合物的三颈250ml圆底烧瓶被加热,直到反应混合物的温度达到80℃。单体供给溶液以0.83ml/min的速率供给到反应器中,总供给时间为约60分钟。单体供给完成后,在80℃再维持反应器1小时。终止加热,将反应器冷却到室温同时搅拌。使用甲醇(反应混合物的10倍)将得到的聚合物溶液沉淀,过滤并真空干燥。
实施例3:间隙填充组合物1
1.07g四甲氧基甲基甘脲,0.057g对-甲苯磺酸(p-TSA)铵盐(T-1)、0.0036g含氟化合物表面活性剂和108.8g丙二醇单甲醚乙酸酯(PGMEA)被加入到60克含有10wt%的实施例1中PS-HEMA聚合物的PGMEA溶液中,以得到基于组合物的总重量的4.2wt%的溶液。将溶液通过具有0.45微米孔径的PTFE微过滤器进行过滤,以获得间隙填充组合物1。
实施例4:间隙填充组合物2
1.07g四甲氧基甲基甘脲,0.057gp-TSA铵盐(T-1)、0.0036g含氟化合物表面活性剂和108.8g丙二醇单甲醚乙酸酯(PGMEA)被加入到60克含有10wt%的实施例2中PS-HDMA聚合物的PGMEA溶液中,以得到基于组合物的总重量的4.2wt%的溶液。将溶液通过具有0.45微米孔径的PTFE微过滤器进行过滤,以获得间隙填充组合物2。
实施例5:间隙填充组合物3
1.07g四甲氧基甲基甘脲,0.07g四亚甲基锍盐(T-2)、0.0036g含氟化合物表面活性剂和108.8g丙二醇单甲醚乙酸酯(PGMEA)被加入到60克含有10wt%的实施例1中PS-HEMA聚合物的PGMEA溶液中,以得到基于组合物的总重量的4.2wt%的溶液。将溶液通过具有0.45微米孔径的PTFE微过滤器进行过滤,以获得间隙填充组合物3。
实施例6:溶剂洗脱测试
可交联聚合物的热交联反应可通过执行溶液洗脱测试来间接的监控。实施例3-5中的间隙填充组合物的每一个被在1500rpm的转速下旋涂在相应的裸硅晶片。在氮气环境下(O2浓度低于100ppm),将涂覆的硅片在几个温度下烘焙1分钟,以获得130nm(ti)的初始涂层厚度。使用1∶1的PGMEA∶HBM(2-羟基异丁酸甲酯)溶剂混合物充分冲洗该膜,以去除组合物未交联的部分。保留在衬底上的未溶解的交联的组合物的厚度(tf)被测量,并且厚度损失由(ti-tf)/(ti)确定。结果如表1所示。
表1
间隙填充组合物3和4从120-130℃开始显示出低厚度损失,并且填充间隙组合物5从205℃开始显示出低厚度损失。这些温度都表明了相应聚合物交联的起始温度,并且低厚度损失表示完全或接近完全交联。
实施例7:间隙填充工艺
提供一个在硅片上的8英寸图案化的400nmLPCVDSiO2。图案包括具有300nm的线和空间的沟槽和具有150nm的线和空间的沟槽。实施例3的间隙填充组合物被在1500rpm的转速下旋涂覆盖硅片的图案化表面,以给出厚度大约是100nm的膜。组合物被在215℃的热板上加热一分钟,以引起聚合物的交联。交联后的沟槽图案显示在图3A(300nm1∶1沟槽图案的SEM显微照片与长宽比为1.33)和3B(150nm1∶1沟槽图案具有长径比2.0)的SEM显微镜照片中。沟槽被填充,而没有形成空隙。
实施例8:间隙填充组合物
准备间隙填充组合物:以表2中所示的量将组分结合。将溶液通过具有0.45微米孔径的PTFE微过滤器进行过滤,以提供间隙填充组合物。
表2
间隙填充物 | 聚合物 | TAG | 交联剂 | 表面活性剂 | 溶剂 |
1 | P-1(6g) | T-1(57mg) | C-1(1.07g) | F-1(3.6mg) | PGMEA(162.8g) |
2 | P-1(6g) | T-1(57mg) | C-1(1.07g) | F-1(3.6mg) | PGMEA(162.8g) |
3 | P-2(6g) | T-2(57mg) | C-1(1.07g) | F-1(3.6mg) | PGMEA(162.8g) |
4 | P-3(6g) | T-1(57mg) | C-1(1.07g) | F-1(3.6mg) | PGMEA(162.8g) |
5 | P-4(6g) | T-1(57mg) | C-1(1.07g) | F-1(3.6mg) | PGMEA(162.8g) |
6 | P-4(6g) | T-2(57mg) | C-1(1.07g) | F-1(3.6mg) | PGMEA(162.8g) |
7 | P-4(6g) | T-1(57mg) | C-2(1.07g) | F-1(3.6mg) | PGMEA(162.8g) |
8 | P-4(6g) | T-1(57mg) | C-1(1.07g) | F-1(3.6mg) | PGMEA(146.5g)/GBL(16.3g) |
9 | P-5(6g) | T-1(57mg) | C-1(1.07g) | F-1(3.6mg) | PGMEA(162.8g) |
10 | P-5(6g) | T-2(57mg) | C-1(1.07g) | F-1(3.6mg) | PGMEA(162.8g) |
11 | P-5(6g) | T-1(57mg) | C-2(1.07g) | F-1(3.6mg) | PGMEA(162.8g) |
12 | P-5(6g) | T-1(57mg) | C-1(1.07g) | F-1(3.6mg) | PGMEA(146.5g)/GBL(16.3g) |
13 | P-6(6g) | T-1(57mg) | C-1(1.07g) | F-1(3.6mg) | PGMEA(162.8g) |
14 | P-6(6g) | T-2(57mg) | C-1(1.07g) | F-1(3.6mg) | PGMEA(162.8g) |
15 | P-7(6g) | T-1(57mg) | C-1(1.07g) | F-1(3.6mg) | PGMEA(162.8g) |
16 | P-7(6g) | T-2(57mg) | C-1(1.07g) | F-1(3.6mg) | PGMEA(162.8g) |
17 | P-8(6g) | T-1(57mg) | C-1(1.07g) | F-1(3.6mg) | PGMEA(162.8g) |
18 | P-8(6g) | T-2(57mg) | C-1(1.07g) | F-1(3.6mg) | PGMEA(162.8g) |
PGMEA=丙二醇单甲基醚乙酸酯;GBL=γ-丁内酯;T1=对甲苯磺酸的铵盐;T2=(4-叔-丁基苯基)四亚甲基锍(3-羟基金刚烷基酯)-四氟-苯磺酸盐);C-1=四甲氧基甲基甘脲;C-2=六羟甲基三聚氰胺;F-1=含氟化合物表面活性剂。
实施例9:间隙填充工艺
提供具有535nm厚度的LPCVDSiO2图案的8英寸硅片。图案包括具有在沟槽顶部58nm,在沟槽底部20nm宽,在沟槽1/2高度处45nm宽度的沟槽。间隙填充组合物2,5,9和13被在1500rpm的转速下旋涂覆盖相对硅片的图案化表面,涂覆的厚度大约是200nm。组合物被在215℃的热板上加热1分钟,以引起聚合物的交联。根据目测观察,沟道被填充且不产生如图所示4A(组合物2)、4B(组合物5)、4C(组合物9)和4D(组合物13)的空隙。
实施例10:间隙填充工艺
使用间隙填充组合物1,3,4,6-8,10-12和14-18,重复实施例9描述的方法。根据目测观测,预计沟槽将以没有空隙的方式被填充。
Claims (10)
1.一种间隙填充方法,所述方法包括:
(a)提供半导体衬底,该半导体衬底具有在所述衬底的表面上的浮雕图像,该浮雕图像包括多个待填充间隙;
(b)将间隙填充组合物涂覆到该浮雕图像上,其中该间隙填充组合物包含未交联的可交联聚合物、酸催化剂、交联剂和溶剂,其中所述可交联聚合物包括以下通式(I)的第一单元:
其中:R1选自氢、氟、C1-C3烷基和C1-C3氟烷基;以及Ar1是不含可交联基团例如羟基的任选取代的芳基;以及以下通式(II)的第二单元:
其中:R3选自氢、氟、C1-C3烷基和C1-C3氟烷基;且R4选自任选取代的C1-C12线性、支链或环状烷基,以及任选取代的C6-C15芳基,任选含有杂原子,其中至少一个氢原子被由独立地选自羟基、羧基、硫醇、胺、环氧基、烷氧基、酰胺和乙烯基的官能团取代;以及
(c)加热该间隙填充组合物到使聚合物交联的温度。
2.根据权利要求1所述的方法,其中第一单元选自一个或多个选自下式(I-A)、(I-B)和(I-C)的单元:
其中:R1选自氢、氟、C1-C3烷基和C1-C3氟代烷基;R2独立地选自卤素、硝基、氰基,和任选取代的C1-C15线性、支链或环状的烷基、烯基、炔基、C6-C18芳基以及它们的组合,并且R2不含可交联基团;a是0-5的整数;b是从0到7的整数;c为0-9的整数。
3.根据权利要求2所述的方法,其中第一单元是:
4.根据权利要求1-3中任一项所述的方法,其中第二单元选自一个或多个以下单元:
5.根据权利要求4所述的方法,其中所述第二单元是:
6.根据权利要求1-5中任一项所述的方法,其中可交联聚合物由通式(I)和通式(II)的单元组成。
7.根据权利要求1-6中任一项所述的方法,其中可交联聚合物具有大于9000的重均分子量。
8.根据权利要求1-7中任一项所述的方法,其中间隙具有小于50nm的宽度和2或更大的长宽比。
9.根据权利要求1-8中任一项所述的方法,进一步包括,在导致间隙填充组合物交联之前,在一定温度下将间隙填充组合物加热,以导致间隙填充组合物填充多个间隙。
10.根据权利要求9所述的方法,其中在单个工艺中实施填充多个间隙的加热和交联的加热。
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CN1732410A (zh) * | 2002-12-26 | 2006-02-08 | 日产化学工业株式会社 | 碱溶解型光刻用形成填隙材料的组合物 |
CN101459106A (zh) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | 浅沟槽隔离结构的形成方法 |
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