JP2015122504A5 - - Google Patents

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Publication number
JP2015122504A5
JP2015122504A5 JP2014259265A JP2014259265A JP2015122504A5 JP 2015122504 A5 JP2015122504 A5 JP 2015122504A5 JP 2014259265 A JP2014259265 A JP 2014259265A JP 2014259265 A JP2014259265 A JP 2014259265A JP 2015122504 A5 JP2015122504 A5 JP 2015122504A5
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JP
Japan
Prior art keywords
molecular weight
peel resistance
low
barc
photoresists
Prior art date
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JP2014259265A
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English (en)
Japanese (ja)
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JP6014110B2 (ja
JP2015122504A (ja
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Publication of JP2015122504A publication Critical patent/JP2015122504A/ja
Publication of JP2015122504A5 publication Critical patent/JP2015122504A5/ja
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Publication of JP6014110B2 publication Critical patent/JP6014110B2/ja
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JP2014259265A 2013-12-23 2014-12-22 ギャップ充填方法 Active JP6014110B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361920344P 2013-12-23 2013-12-23
US61/920,344 2013-12-23

Publications (3)

Publication Number Publication Date
JP2015122504A JP2015122504A (ja) 2015-07-02
JP2015122504A5 true JP2015122504A5 (enExample) 2016-06-23
JP6014110B2 JP6014110B2 (ja) 2016-10-25

Family

ID=53533840

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014259265A Active JP6014110B2 (ja) 2013-12-23 2014-12-22 ギャップ充填方法

Country Status (5)

Country Link
US (1) US9558987B2 (enExample)
JP (1) JP6014110B2 (enExample)
KR (2) KR20150075046A (enExample)
CN (1) CN105304550B (enExample)
TW (1) TWI573844B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10163632B2 (en) 2016-12-15 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Material composition and process for substrate modification
KR20210145986A (ko) * 2020-05-26 2021-12-03 에스케이하이닉스 주식회사 평탄화층 형성 방법 및 이를 이용한 패턴 형성 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW299475B (enExample) 1993-03-30 1997-03-01 Siemens Ag
JP3807587B2 (ja) * 1999-07-12 2006-08-09 協和化学工業株式会社 難燃性熱可塑性樹脂組成物及びその成形品
US6461717B1 (en) 2000-04-24 2002-10-08 Shipley Company, L.L.C. Aperture fill
JP4654544B2 (ja) 2000-07-12 2011-03-23 日産化学工業株式会社 リソグラフィー用ギャップフィル材形成組成物
EP1398831A3 (en) 2002-09-13 2008-02-20 Shipley Co. L.L.C. Air gaps formation
KR101158297B1 (ko) 2002-12-26 2012-06-26 닛산 가가쿠 고교 가부시키 가이샤 알칼리 용해형 리소그라피용 갭 필링재 형성조성물
TWI310484B (en) * 2003-02-21 2009-06-01 Nissan Chemical Ind Ltd Composition containing acrylic polymer for forming gap-filling material for lithography
CN101107569B (zh) * 2005-01-21 2011-06-15 日产化学工业株式会社 含有具有被保护的羧基的化合物的形成光刻用下层膜的组合物
EP1691238A3 (en) 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
EP1762895B1 (en) * 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
CN101459106B (zh) * 2007-12-13 2011-01-12 中芯国际集成电路制造(上海)有限公司 浅沟槽隔离结构的形成方法
JP5040839B2 (ja) * 2008-07-18 2012-10-03 Jsr株式会社 レジスト下層膜形成組成物
TWI541609B (zh) * 2011-02-17 2016-07-11 富士軟片股份有限公司 填隙組成物、填隙方法以及使用該組成物製造半導體元件的方法

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