CN105304550B - 间隙填充方法 - Google Patents

间隙填充方法 Download PDF

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Publication number
CN105304550B
CN105304550B CN201410858450.4A CN201410858450A CN105304550B CN 105304550 B CN105304550 B CN 105304550B CN 201410858450 A CN201410858450 A CN 201410858450A CN 105304550 B CN105304550 B CN 105304550B
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CN
China
Prior art keywords
gap
composition
unit
filling
fill
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410858450.4A
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English (en)
Chinese (zh)
Other versions
CN105304550A (zh
Inventor
沈载桓
朴琎洪
林载峰
赵廷奎
徐承柏
朴钟根
李明琦
P·D·胡斯塔德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ROHM and HAAS ELECT MATERIALS
Dow Global Technologies LLC
DuPont Electronic Materials International LLC
Original Assignee
ROHM and HAAS ELECT MATERIALS
Dow Global Technologies LLC
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by ROHM and HAAS ELECT MATERIALS, Dow Global Technologies LLC, Rohm and Haas Electronic Materials LLC filed Critical ROHM and HAAS ELECT MATERIALS
Publication of CN105304550A publication Critical patent/CN105304550A/zh
Application granted granted Critical
Publication of CN105304550B publication Critical patent/CN105304550B/zh
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Formation Of Insulating Films (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
CN201410858450.4A 2013-12-23 2014-12-23 间隙填充方法 Active CN105304550B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361920344P 2013-12-23 2013-12-23
US61/920,344 2013-12-23

Publications (2)

Publication Number Publication Date
CN105304550A CN105304550A (zh) 2016-02-03
CN105304550B true CN105304550B (zh) 2018-05-08

Family

ID=53533840

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410858450.4A Active CN105304550B (zh) 2013-12-23 2014-12-23 间隙填充方法

Country Status (5)

Country Link
US (1) US9558987B2 (enExample)
JP (1) JP6014110B2 (enExample)
KR (2) KR20150075046A (enExample)
CN (1) CN105304550B (enExample)
TW (1) TWI573844B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10163632B2 (en) 2016-12-15 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Material composition and process for substrate modification
KR20210145986A (ko) * 2020-05-26 2021-12-03 에스케이하이닉스 주식회사 평탄화층 형성 방법 및 이를 이용한 패턴 형성 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6500882B1 (en) * 1999-07-12 2002-12-31 Kyowa Chemical Industry Co., Ltd. Flame-retardant, flame-retardant resin composition and molded article thereof
CN1732410A (zh) * 2002-12-26 2006-02-08 日产化学工业株式会社 碱溶解型光刻用形成填隙材料的组合物
CN101459106A (zh) * 2007-12-13 2009-06-17 中芯国际集成电路制造(上海)有限公司 浅沟槽隔离结构的形成方法
JP2010026221A (ja) * 2008-07-18 2010-02-04 Jsr Corp 下層膜形成組成物

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW299475B (enExample) 1993-03-30 1997-03-01 Siemens Ag
US6461717B1 (en) 2000-04-24 2002-10-08 Shipley Company, L.L.C. Aperture fill
JP4654544B2 (ja) 2000-07-12 2011-03-23 日産化学工業株式会社 リソグラフィー用ギャップフィル材形成組成物
EP1398831A3 (en) 2002-09-13 2008-02-20 Shipley Co. L.L.C. Air gaps formation
TWI310484B (en) * 2003-02-21 2009-06-01 Nissan Chemical Ind Ltd Composition containing acrylic polymer for forming gap-filling material for lithography
CN101107569B (zh) * 2005-01-21 2011-06-15 日产化学工业株式会社 含有具有被保护的羧基的化合物的形成光刻用下层膜的组合物
EP1691238A3 (en) 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
EP1762895B1 (en) * 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
TWI541609B (zh) * 2011-02-17 2016-07-11 富士軟片股份有限公司 填隙組成物、填隙方法以及使用該組成物製造半導體元件的方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6500882B1 (en) * 1999-07-12 2002-12-31 Kyowa Chemical Industry Co., Ltd. Flame-retardant, flame-retardant resin composition and molded article thereof
CN1732410A (zh) * 2002-12-26 2006-02-08 日产化学工业株式会社 碱溶解型光刻用形成填隙材料的组合物
CN101459106A (zh) * 2007-12-13 2009-06-17 中芯国际集成电路制造(上海)有限公司 浅沟槽隔离结构的形成方法
JP2010026221A (ja) * 2008-07-18 2010-02-04 Jsr Corp 下層膜形成組成物

Also Published As

Publication number Publication date
CN105304550A (zh) 2016-02-03
KR20150075046A (ko) 2015-07-02
KR20160119011A (ko) 2016-10-12
US20150348828A1 (en) 2015-12-03
US9558987B2 (en) 2017-01-31
TW201536880A (zh) 2015-10-01
JP6014110B2 (ja) 2016-10-25
JP2015122504A (ja) 2015-07-02
TWI573844B (zh) 2017-03-11

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