KR20150075046A - 갭-충전 방법 - Google Patents

갭-충전 방법 Download PDF

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Publication number
KR20150075046A
KR20150075046A KR1020140187562A KR20140187562A KR20150075046A KR 20150075046 A KR20150075046 A KR 20150075046A KR 1020140187562 A KR1020140187562 A KR 1020140187562A KR 20140187562 A KR20140187562 A KR 20140187562A KR 20150075046 A KR20150075046 A KR 20150075046A
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KR
South Korea
Prior art keywords
gap
composition
filling
optionally substituted
polymer
Prior art date
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Ceased
Application number
KR1020140187562A
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English (en)
Korean (ko)
Inventor
심재환
박진홍
림재봉
조정규
쳉-바이 슈
박종근
밍키 리
필립 디. 허스태드
Original Assignee
롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
다우 글로벌 테크놀로지스 엘엘씨
롬엔드하스전자재료코리아유한회사
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Application filed by 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨, 다우 글로벌 테크놀로지스 엘엘씨, 롬엔드하스전자재료코리아유한회사 filed Critical 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
Publication of KR20150075046A publication Critical patent/KR20150075046A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L25/00—Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
    • C08L25/02—Homopolymers or copolymers of hydrocarbons
    • C08L25/04—Homopolymers or copolymers of styrene
    • C08L25/06—Polystyrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur, or oxygen atoms in addition to the carboxy oxygen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00—Applications
    • C08L2203/20—Applications use in electrical or conductive gadgets

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020140187562A 2013-12-23 2014-12-23 갭-충전 방법 Ceased KR20150075046A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361920344P 2013-12-23 2013-12-23
US61/920,344 2013-12-23

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020160125437A Division KR20160119011A (ko) 2013-12-23 2016-09-29 갭-충전 방법

Publications (1)

Publication Number Publication Date
KR20150075046A true KR20150075046A (ko) 2015-07-02

Family

ID=53533840

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020140187562A Ceased KR20150075046A (ko) 2013-12-23 2014-12-23 갭-충전 방법
KR1020160125437A Ceased KR20160119011A (ko) 2013-12-23 2016-09-29 갭-충전 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020160125437A Ceased KR20160119011A (ko) 2013-12-23 2016-09-29 갭-충전 방법

Country Status (5)

Country Link
US (1) US9558987B2 (enExample)
JP (1) JP6014110B2 (enExample)
KR (2) KR20150075046A (enExample)
CN (1) CN105304550B (enExample)
TW (1) TWI573844B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10163632B2 (en) 2016-12-15 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Material composition and process for substrate modification
KR20210145986A (ko) * 2020-05-26 2021-12-03 에스케이하이닉스 주식회사 평탄화층 형성 방법 및 이를 이용한 패턴 형성 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW299475B (enExample) 1993-03-30 1997-03-01 Siemens Ag
JP3807587B2 (ja) * 1999-07-12 2006-08-09 協和化学工業株式会社 難燃性熱可塑性樹脂組成物及びその成形品
US6461717B1 (en) 2000-04-24 2002-10-08 Shipley Company, L.L.C. Aperture fill
JP4654544B2 (ja) 2000-07-12 2011-03-23 日産化学工業株式会社 リソグラフィー用ギャップフィル材形成組成物
EP1398831A3 (en) 2002-09-13 2008-02-20 Shipley Co. L.L.C. Air gaps formation
KR101158297B1 (ko) 2002-12-26 2012-06-26 닛산 가가쿠 고교 가부시키 가이샤 알칼리 용해형 리소그라피용 갭 필링재 형성조성물
TWI310484B (en) * 2003-02-21 2009-06-01 Nissan Chemical Ind Ltd Composition containing acrylic polymer for forming gap-filling material for lithography
CN101107569B (zh) * 2005-01-21 2011-06-15 日产化学工业株式会社 含有具有被保护的羧基的化合物的形成光刻用下层膜的组合物
EP1691238A3 (en) 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
EP1762895B1 (en) * 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
CN101459106B (zh) * 2007-12-13 2011-01-12 中芯国际集成电路制造(上海)有限公司 浅沟槽隔离结构的形成方法
JP5040839B2 (ja) * 2008-07-18 2012-10-03 Ｊｓｒ株式会社 レジスト下層膜形成組成物
TWI541609B (zh) * 2011-02-17 2016-07-11 富士軟片股份有限公司 填隙組成物、填隙方法以及使用該組成物製造半導體元件的方法

Also Published As

Publication number Publication date
CN105304550A (zh) 2016-02-03
CN105304550B (zh) 2018-05-08
KR20160119011A (ko) 2016-10-12
US20150348828A1 (en) 2015-12-03
US9558987B2 (en) 2017-01-31
TW201536880A (zh) 2015-10-01
JP6014110B2 (ja) 2016-10-25
JP2015122504A (ja) 2015-07-02
TWI573844B (zh) 2017-03-11

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