JP6013317B2 - 同時両面ウエハ研削盤における静水圧パッド圧力調節 - Google Patents
同時両面ウエハ研削盤における静水圧パッド圧力調節 Download PDFInfo
- Publication number
- JP6013317B2 JP6013317B2 JP2013500633A JP2013500633A JP6013317B2 JP 6013317 B2 JP6013317 B2 JP 6013317B2 JP 2013500633 A JP2013500633 A JP 2013500633A JP 2013500633 A JP2013500633 A JP 2013500633A JP 6013317 B2 JP6013317 B2 JP 6013317B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- grinding
- hydrostatic
- hydrostatic pressure
- pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/08—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass
- B24B9/14—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass of optical work, e.g. lenses, prisms
- B24B9/148—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass of optical work, e.g. lenses, prisms electrically, e.g. numerically, controlled
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/10—Single-purpose machines or devices
- B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
- B24B7/17—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US31791910P | 2010-03-26 | 2010-03-26 | |
| US61/317,919 | 2010-03-26 | ||
| PCT/IB2011/051152 WO2011117792A1 (en) | 2010-03-26 | 2011-03-18 | Hydrostatic pad pressure modulation in a simultaneous double side wafer grinder |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013524484A JP2013524484A (ja) | 2013-06-17 |
| JP2013524484A5 JP2013524484A5 (enExample) | 2015-10-15 |
| JP6013317B2 true JP6013317B2 (ja) | 2016-10-25 |
Family
ID=44657008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013500633A Active JP6013317B2 (ja) | 2010-03-26 | 2011-03-18 | 同時両面ウエハ研削盤における静水圧パッド圧力調節 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8712575B2 (enExample) |
| EP (1) | EP2552644A4 (enExample) |
| JP (1) | JP6013317B2 (enExample) |
| KR (1) | KR101694574B1 (enExample) |
| CN (1) | CN102844151A (enExample) |
| SG (1) | SG184014A1 (enExample) |
| TW (1) | TWI520202B (enExample) |
| WO (1) | WO2011117792A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9960088B2 (en) * | 2011-11-07 | 2018-05-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | End point detection in grinding |
| US9358660B2 (en) | 2011-11-07 | 2016-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Grinding wheel design with elongated teeth arrangement |
| JP6197580B2 (ja) * | 2013-10-29 | 2017-09-20 | 株式会社Sumco | キャリアプレート及びワークの両面研磨装置 |
| CN105881213A (zh) * | 2014-09-01 | 2016-08-24 | 曾庆明 | 一种精密双面研磨机的控制器 |
| JP6285375B2 (ja) * | 2015-02-17 | 2018-02-28 | 光洋機械工業株式会社 | 両頭平面研削装置 |
| JP6447472B2 (ja) * | 2015-11-26 | 2019-01-09 | 株式会社Sumco | ウェーハ研磨方法 |
| CN108127560A (zh) * | 2017-12-08 | 2018-06-08 | 中国兵器科学研究院宁波分院 | 用于方形光学元件双面快速抛光的控制系统 |
| JP6513174B2 (ja) * | 2017-12-25 | 2019-05-15 | 信越半導体株式会社 | ウェーハ保持用キャリアの設計方法 |
| JP7159861B2 (ja) * | 2018-12-27 | 2022-10-25 | 株式会社Sumco | 両頭研削方法 |
| JP7116371B2 (ja) * | 2019-04-01 | 2022-08-10 | 株式会社村田製作所 | 研磨剤供給装置、研磨装置及び研磨剤供給方法 |
| US11415971B2 (en) | 2020-02-10 | 2022-08-16 | Globalwafers Co., Ltd. | Systems and methods for enhanced wafer manufacturing |
| CN116601575A (zh) * | 2020-11-10 | 2023-08-15 | 环球晶圆股份有限公司 | 使用阶层式预测及复合阈值增强机器学习的系统及方法 |
| CN114227524A (zh) * | 2021-12-30 | 2022-03-25 | 西安奕斯伟材料科技有限公司 | 双面研磨装置和双面研磨方法 |
| US12386340B2 (en) | 2022-02-25 | 2025-08-12 | Globalwafers Co., Ltd. | Systems and methods for generating post-polishing topography for enhanced wafer manufacturing |
| CN115070604B (zh) * | 2022-06-09 | 2023-09-29 | 西安奕斯伟材料科技股份有限公司 | 双面研磨装置和双面研磨方法 |
| CN115723035B (zh) * | 2022-09-08 | 2024-05-28 | 西安奕斯伟材料科技股份有限公司 | 用于监控研磨装置的加工状态的系统、方法及双面研磨装置 |
| CN115383616B (zh) * | 2022-09-22 | 2024-05-31 | 西安奕斯伟材料科技股份有限公司 | 研磨装置、研磨方法及硅片 |
| CN116475934B (zh) * | 2023-03-31 | 2025-03-28 | 西安奕斯伟材料科技股份有限公司 | 静压垫、研磨设备及硅片 |
| CN120715743A (zh) * | 2025-04-18 | 2025-09-30 | 浙江求是半导体设备有限公司 | 一种晶圆双面减薄方法和系统 |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1177497A (ja) * | 1997-09-01 | 1999-03-23 | Waida Seisakusho:Kk | 半導体ウエハの両面研削方法及び両面研削装置 |
| JPH11154655A (ja) * | 1997-11-21 | 1999-06-08 | Komatsu Electron Metals Co Ltd | 半導体ウェハの製造方法 |
| JP3328193B2 (ja) * | 1998-07-08 | 2002-09-24 | 信越半導体株式会社 | 半導体ウエーハの製造方法 |
| JP3664593B2 (ja) * | 1998-11-06 | 2005-06-29 | 信越半導体株式会社 | 半導体ウエーハおよびその製造方法 |
| JP3969956B2 (ja) * | 1999-05-07 | 2007-09-05 | 信越半導体株式会社 | 両面同時研削方法および両面同時研削盤並びに両面同時ラップ方法および両面同時ラップ盤 |
| US6294469B1 (en) * | 1999-05-21 | 2001-09-25 | Plasmasil, Llc | Silicon wafering process flow |
| JP2002307303A (ja) * | 2001-04-10 | 2002-10-23 | Koyo Mach Ind Co Ltd | 薄板円板状ワークの両面研削方法および装置 |
| JP2002307275A (ja) * | 2001-04-16 | 2002-10-23 | Sumitomo Heavy Ind Ltd | 加工システム及び面取り装置 |
| JP2002346924A (ja) * | 2001-05-29 | 2002-12-04 | Sumitomo Heavy Ind Ltd | ワークホルダ |
| JP3848120B2 (ja) * | 2001-10-12 | 2006-11-22 | 住友重機械工業株式会社 | ワーク研削装置 |
| JP2004072076A (ja) * | 2002-06-10 | 2004-03-04 | Nikon Corp | 露光装置及びステージ装置、並びにデバイス製造方法 |
| EP1616662B1 (en) * | 2002-10-09 | 2009-03-11 | Koyo Machine Industries Co., Ltd. | Both side grinding method and both side grinder of thin disc-like work |
| JP3993856B2 (ja) * | 2004-01-22 | 2007-10-17 | 光洋機械工業株式会社 | 両頭平面研削装置 |
| JP4326974B2 (ja) * | 2004-01-30 | 2009-09-09 | コマツNtc株式会社 | ウェーハの研削装置及び研削方法 |
| DE102004005702A1 (de) * | 2004-02-05 | 2005-09-01 | Siltronic Ag | Halbleiterscheibe, Vorrichtung und Verfahren zur Herstellung der Halbleiterscheibe |
| WO2005095054A1 (en) * | 2004-03-19 | 2005-10-13 | Memc Electronic Materials, Inc. | Wafer clamping device for a double side grinder |
| US7040958B2 (en) * | 2004-05-21 | 2006-05-09 | Mosel Vitelic, Inc. | Torque-based end point detection methods for chemical mechanical polishing tool which uses ceria-based CMP slurry to polish to protective pad layer |
| JP4615275B2 (ja) * | 2004-09-21 | 2011-01-19 | 株式会社ディスコ | ウェーハ研磨装置及びウェーハの研磨方法 |
| JP4670566B2 (ja) * | 2005-09-29 | 2011-04-13 | 信越半導体株式会社 | 半導体ウェーハの両頭研削装置、静圧パッドおよびこれを用いた両頭研削方法 |
| JP4752475B2 (ja) * | 2005-12-08 | 2011-08-17 | 信越半導体株式会社 | 半導体ウェーハの両頭研削装置、静圧パッドおよびこれを用いた両頭研削方法 |
| US7601049B2 (en) * | 2006-01-30 | 2009-10-13 | Memc Electronic Materials, Inc. | Double side wafer grinder and methods for assessing workpiece nanotopology |
| WO2007130708A1 (en) * | 2006-01-30 | 2007-11-15 | Memc Electronic Materials, Inc. | Double side wafer grinder and methods for assessing workpiece nanotopology |
| US7662023B2 (en) * | 2006-01-30 | 2010-02-16 | Memc Electronic Materials, Inc. | Double side wafer grinder and methods for assessing workpiece nanotopology |
| US7930058B2 (en) * | 2006-01-30 | 2011-04-19 | Memc Electronic Materials, Inc. | Nanotopography control and optimization using feedback from warp data |
| EP1870936A1 (fr) * | 2006-06-19 | 2007-12-26 | STMicroelectronics (Rousset) SAS | Procédé de fabrication de lentilles, notamment pour imageur intégré |
| KR20090031571A (ko) * | 2006-07-18 | 2009-03-26 | 제이에스알 가부시끼가이샤 | 화학 기계 연마용 수계 분산체, 그의 제조 방법 및 화학 기계 연마 방법 |
| DE102007030958B4 (de) * | 2007-07-04 | 2014-09-11 | Siltronic Ag | Verfahren zum Schleifen von Halbleiterscheiben |
| US8859396B2 (en) * | 2007-08-07 | 2014-10-14 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
| US7989319B2 (en) * | 2007-08-07 | 2011-08-02 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
| US8012857B2 (en) * | 2007-08-07 | 2011-09-06 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
| JP5245319B2 (ja) * | 2007-08-09 | 2013-07-24 | 富士通株式会社 | 研磨装置及び研磨方法、基板及び電子機器の製造方法 |
| DE102007049811B4 (de) * | 2007-10-17 | 2016-07-28 | Peter Wolters Gmbh | Läuferscheibe, Verfahren zur Beschichtung einer Läuferscheibe sowie Verfahren zur gleichzeitigen beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben |
| JP4985451B2 (ja) * | 2008-02-14 | 2012-07-25 | 信越半導体株式会社 | ワークの両頭研削装置およびワークの両頭研削方法 |
| JP5390807B2 (ja) * | 2008-08-21 | 2014-01-15 | 株式会社荏原製作所 | 研磨方法および装置 |
| JP2010064214A (ja) * | 2008-09-12 | 2010-03-25 | Koyo Mach Ind Co Ltd | 両頭平面研削盤及びワークの両面研削方法 |
| JP4291405B1 (ja) * | 2008-11-14 | 2009-07-08 | 健治 吉田 | ドットパターン読み取り機能を備えたマウス |
| DE102009048436B4 (de) * | 2009-10-07 | 2012-12-20 | Siltronic Ag | Verfahren zum Schleifen einer Halbleiterscheibe |
-
2011
- 2011-03-16 US US13/049,536 patent/US8712575B2/en active Active
- 2011-03-18 SG SG2012067369A patent/SG184014A1/en unknown
- 2011-03-18 WO PCT/IB2011/051152 patent/WO2011117792A1/en not_active Ceased
- 2011-03-18 CN CN201180016139XA patent/CN102844151A/zh active Pending
- 2011-03-18 KR KR1020127025126A patent/KR101694574B1/ko active Active
- 2011-03-18 JP JP2013500633A patent/JP6013317B2/ja active Active
- 2011-03-18 EP EP11758894.7A patent/EP2552644A4/en not_active Withdrawn
- 2011-03-25 TW TW100110457A patent/TWI520202B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2552644A4 (en) | 2014-05-14 |
| KR101694574B1 (ko) | 2017-01-09 |
| US20110237160A1 (en) | 2011-09-29 |
| KR20130008572A (ko) | 2013-01-22 |
| US8712575B2 (en) | 2014-04-29 |
| CN102844151A (zh) | 2012-12-26 |
| SG184014A1 (en) | 2012-10-30 |
| EP2552644A1 (en) | 2013-02-06 |
| TWI520202B (zh) | 2016-02-01 |
| JP2013524484A (ja) | 2013-06-17 |
| WO2011117792A1 (en) | 2011-09-29 |
| TW201201264A (en) | 2012-01-01 |
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