JP6009268B2 - 洗浄液生成装置、洗浄液生成方法、基板洗浄装置及び基板洗浄方法 - Google Patents
洗浄液生成装置、洗浄液生成方法、基板洗浄装置及び基板洗浄方法 Download PDFInfo
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- JP6009268B2 JP6009268B2 JP2012177335A JP2012177335A JP6009268B2 JP 6009268 B2 JP6009268 B2 JP 6009268B2 JP 2012177335 A JP2012177335 A JP 2012177335A JP 2012177335 A JP2012177335 A JP 2012177335A JP 6009268 B2 JP6009268 B2 JP 6009268B2
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- silicon material
- phosphoric acid
- aqueous solution
- acid aqueous
- cleaning
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- 238000004140 cleaning Methods 0.000 title claims description 95
- 239000000758 substrate Substances 0.000 title claims description 60
- 239000007788 liquid Substances 0.000 title claims description 46
- 238000000034 method Methods 0.000 title claims description 25
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 253
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 127
- 239000007864 aqueous solution Substances 0.000 claims description 125
- 239000002210 silicon-based material Substances 0.000 claims description 122
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 57
- 229910052710 silicon Inorganic materials 0.000 claims description 57
- 239000010703 silicon Substances 0.000 claims description 57
- 238000003860 storage Methods 0.000 claims description 52
- 238000010438 heat treatment Methods 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 description 36
- 238000005530 etching Methods 0.000 description 15
- 150000004767 nitrides Chemical class 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 14
- 238000001514 detection method Methods 0.000 description 9
- 238000005868 electrolysis reaction Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 229910021642 ultra pure water Inorganic materials 0.000 description 6
- 239000012498 ultrapure water Substances 0.000 description 6
- 238000001035 drying Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000007599 discharging Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000006276 transfer reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- C11D2111/22—
Description
2 洗浄液生成装置
4 洗浄部
5 制御部
11 貯留部
12 加熱部
13 第1のシリコン材
14 第2のシリコン材
15 電圧印加部
15b 電流計
Claims (9)
- リン酸水溶液を貯留する貯留部と、
前記リン酸水溶液を加熱する加熱部と、
前記貯留部内のリン酸水溶液に浸漬された第1のシリコン材及び第2のシリコン材と、
前記第1のシリコン材と前記第2のシリコン材との間に電位差を生じさせる電圧印加部と、
を備えることを特徴とする洗浄液生成装置。 - 前記第1のシリコン材及び前記第2のシリコン材の両方又は一方は、ボロン又はリンがドープされたシリコン材であることを特徴とする請求項1に記載の洗浄液生成装置。
- 前記電圧印加部は、0.3V以上5.0V以下の範囲内で前記電位差を生じさせることを特徴とする請求項1又は2に記載の洗浄液生成装置。
- 前記電圧印加部は、前記第1のシリコン材及び前記第2のシリコン材に流れる電流値を検出する電流計を具備することを特徴とする請求項1ないし請求項3のいずれか一項に記載の洗浄液生成装置。
- 前記電流計により検出された前記電流値を用いて、前記第1のシリコン材の表面の酸化及び前記第2のシリコン材の表面の酸化を抑えるように前記電圧印加部を制御する制御部をさらに備えることを特徴とする請求項4に記載の洗浄液生成装置。
- 前記電圧印加部は、前記第1のシリコン材と前記第2のシリコン材との互いの電位の正負を入れ替えることを繰り返すことを特徴とする請求項1ないし請求項5のいずれか一項に記載の洗浄液生成装置。
- リン酸水溶液を貯留部にためて加熱する、又は、加熱して貯留部にためる工程と、
加熱した前記貯留部内のリン酸水溶液に浸漬された第1のシリコン材と第2のシリコン材との間に電位差を生じさせる工程と、
を有することを特徴とする洗浄液生成方法。 - リン酸水溶液を貯留する貯留部と、
前記リン酸水溶液を加熱する加熱部と、
前記貯留部内のリン酸水溶液に浸漬された第1のシリコン材及び第2のシリコン材と、
前記第1のシリコン材と前記第2のシリコン材との間に電位差を生じさせる電圧印加部と、
前記第1のシリコン材又は前記第2のシリコン材から溶解したシリコンを含むリン酸水溶液により基板を洗浄する洗浄部と、
を備えることを特徴とする基板洗浄装置。 - リン酸水溶液を貯留部にためて加熱する、又は、加熱して貯留部にためる工程と、
加熱した前記貯留部内のリン酸水溶液に浸漬された第1のシリコン材と第2のシリコン材との間に電位差を生じさせる工程と、
前記第1のシリコン材又は前記第2のシリコン材から溶解したシリコンを含むリン酸水溶液により基板を洗浄する工程と、
を有することを特徴とする基板洗浄方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012177335A JP6009268B2 (ja) | 2012-08-09 | 2012-08-09 | 洗浄液生成装置、洗浄液生成方法、基板洗浄装置及び基板洗浄方法 |
KR20130091438A KR101494969B1 (ko) | 2012-08-09 | 2013-08-01 | 세정액 생성 장치, 세정액 생성 방법, 기판 세정 장치 및 기판 세정 방법 |
TW102127627A TWI525688B (zh) | 2012-08-09 | 2013-08-01 | A cleaning liquid generation device, a cleaning liquid generation method, a substrate cleaning device, and a substrate cleaning method |
CN201310346630.XA CN103579055B (zh) | 2012-08-09 | 2013-08-09 | 清洗液生成装置、清洗液生成方法、基板清洗装置及基板清洗方法 |
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JP2012177335A JP6009268B2 (ja) | 2012-08-09 | 2012-08-09 | 洗浄液生成装置、洗浄液生成方法、基板洗浄装置及び基板洗浄方法 |
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JP2014036155A JP2014036155A (ja) | 2014-02-24 |
JP6009268B2 true JP6009268B2 (ja) | 2016-10-19 |
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JP (1) | JP6009268B2 (ja) |
KR (1) | KR101494969B1 (ja) |
CN (1) | CN103579055B (ja) |
TW (1) | TWI525688B (ja) |
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CN103878145B (zh) * | 2014-04-17 | 2015-12-30 | 中国科学院微电子研究所 | 一种对硅酸镓镧晶片进行清洗的方法 |
JP6440111B2 (ja) * | 2014-08-14 | 2018-12-19 | 株式会社Screenホールディングス | 基板処理方法 |
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JPH05299014A (ja) * | 1992-04-17 | 1993-11-12 | Matsushita Electric Ind Co Ltd | 探針走査型顕微鏡用探針の製造方法 |
JPH06349808A (ja) * | 1993-06-14 | 1994-12-22 | Hitachi Ltd | 窒化シリコン膜除去液およびそれを用いた半導体製造装置 |
JP3629716B2 (ja) * | 1994-03-02 | 2005-03-16 | セイコーエプソン株式会社 | 配線膜の製造方法、液晶表示装置の製造方法、及び半導体装置の製造方法 |
US6399517B2 (en) * | 1999-03-30 | 2002-06-04 | Tokyo Electron Limited | Etching method and etching apparatus |
DE19914905A1 (de) * | 1999-04-01 | 2000-10-05 | Bosch Gmbh Robert | Elektrochemische Ätzanlage und Verfahren zur Ätzung eines Ätzkörpers |
JP2001023948A (ja) * | 1999-07-05 | 2001-01-26 | Canon Inc | 半導体基板の製造方法 |
JP2001316893A (ja) * | 2000-05-01 | 2001-11-16 | Shimonoseki Mekki Kk | 不溶性陽極を使用する表面処理方法及びその装置 |
KR200268883Y1 (ko) | 2001-12-14 | 2002-03-16 | 이태구 | 은콜로이드 용액 제조기 |
CN1209499C (zh) * | 2002-08-01 | 2005-07-06 | 台湾积体电路制造股份有限公司 | 蚀刻剂及其在提高蚀刻选择比上的应用 |
US20090134029A1 (en) * | 2005-09-27 | 2009-05-28 | Tanah Process Ltd. | Ion Concentration Regulation Method and Ion Concentration Regulation Apparatus |
JP2007258405A (ja) * | 2006-03-23 | 2007-10-04 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
JP4358259B2 (ja) * | 2007-06-05 | 2009-11-04 | 株式会社東芝 | 半導体製造装置および半導体製造方法 |
JP2009185383A (ja) * | 2008-01-10 | 2009-08-20 | Mitsubishi Materials Corp | 銅めっき液供給機構並びにそれを用いた銅めっき装置および銅皮膜形成方法 |
JP5358303B2 (ja) * | 2008-06-30 | 2013-12-04 | クロリンエンジニアズ株式会社 | 電解硫酸による洗浄方法及び半導体装置の製造方法 |
JP2010109064A (ja) * | 2008-10-29 | 2010-05-13 | Tosoh Corp | エッチング方法 |
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- 2013-08-01 KR KR20130091438A patent/KR101494969B1/ko active IP Right Grant
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CN103579055B (zh) | 2016-07-06 |
CN103579055A (zh) | 2014-02-12 |
KR101494969B1 (ko) | 2015-02-23 |
TWI525688B (zh) | 2016-03-11 |
KR20140020754A (ko) | 2014-02-19 |
JP2014036155A (ja) | 2014-02-24 |
TW201421563A (zh) | 2014-06-01 |
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