JP6001932B2 - プラズマ処理装置及びフィルタユニット - Google Patents

プラズマ処理装置及びフィルタユニット Download PDF

Info

Publication number
JP6001932B2
JP6001932B2 JP2012137958A JP2012137958A JP6001932B2 JP 6001932 B2 JP6001932 B2 JP 6001932B2 JP 2012137958 A JP2012137958 A JP 2012137958A JP 2012137958 A JP2012137958 A JP 2012137958A JP 6001932 B2 JP6001932 B2 JP 6001932B2
Authority
JP
Japan
Prior art keywords
coil
plasma processing
filter
power supply
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012137958A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014003179A (ja
Inventor
望 永島
望 永島
直彦 奥西
直彦 奥西
薫 大橋
薫 大橋
大助 藤山
大助 藤山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2012137958A priority Critical patent/JP6001932B2/ja
Priority to PCT/JP2013/003683 priority patent/WO2013190805A1/fr
Priority to KR1020147029205A priority patent/KR102070471B1/ko
Priority to TW102121459A priority patent/TW201414361A/zh
Publication of JP2014003179A publication Critical patent/JP2014003179A/ja
Application granted granted Critical
Publication of JP6001932B2 publication Critical patent/JP6001932B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits
    • H05H2242/26—Matching networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2012137958A 2012-06-19 2012-06-19 プラズマ処理装置及びフィルタユニット Active JP6001932B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012137958A JP6001932B2 (ja) 2012-06-19 2012-06-19 プラズマ処理装置及びフィルタユニット
PCT/JP2013/003683 WO2013190805A1 (fr) 2012-06-19 2013-06-12 Dispositif de traitement au plasma et élément filtrant
KR1020147029205A KR102070471B1 (ko) 2012-06-19 2013-06-12 플라즈마 처리 장치 및 필터 유닛
TW102121459A TW201414361A (zh) 2012-06-19 2013-06-18 電漿處理裝置及過濾器單元

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012137958A JP6001932B2 (ja) 2012-06-19 2012-06-19 プラズマ処理装置及びフィルタユニット

Publications (2)

Publication Number Publication Date
JP2014003179A JP2014003179A (ja) 2014-01-09
JP6001932B2 true JP6001932B2 (ja) 2016-10-05

Family

ID=49768420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012137958A Active JP6001932B2 (ja) 2012-06-19 2012-06-19 プラズマ処理装置及びフィルタユニット

Country Status (4)

Country Link
JP (1) JP6001932B2 (fr)
KR (1) KR102070471B1 (fr)
TW (1) TW201414361A (fr)
WO (1) WO2013190805A1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2666072C2 (ru) 2014-01-10 2018-09-05 Ниссан Мотор Ко., Лтд. Устройство управления для электромоторного транспортного средства и способ управления для электромоторного транспортного средства
JP6218650B2 (ja) * 2014-03-11 2017-10-25 東京エレクトロン株式会社 プラズマ処理装置
JP6483533B2 (ja) * 2015-06-03 2019-03-13 京セラ株式会社 試料保持具およびこれを用いたプラズマエッチング装置
JP6637846B2 (ja) * 2016-06-23 2020-01-29 東京エレクトロン株式会社 フィルタを設計する方法
JP6698502B2 (ja) 2016-11-21 2020-05-27 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP6832800B2 (ja) * 2017-06-21 2021-02-24 東京エレクトロン株式会社 プラズマ処理装置
US10812033B2 (en) * 2017-12-29 2020-10-20 Lam Research Corporation High-power radio-frequency spiral-coil filter
JP7094856B2 (ja) * 2018-10-19 2022-07-04 東京エレクトロン株式会社 フィルタユニットの調整方法およびプラズマ処理装置
JP7125058B2 (ja) * 2018-12-06 2022-08-24 東京エレクトロン株式会社 プラズマ処理装置、及び、プラズマ処理方法
JP6938746B1 (ja) * 2020-05-01 2021-09-22 東京エレクトロン株式会社 エッチング装置及びエッチング方法
TWI767655B (zh) * 2020-05-01 2022-06-11 日商東京威力科創股份有限公司 蝕刻裝置及蝕刻方法
KR20220061617A (ko) 2020-11-06 2022-05-13 세메스 주식회사 기판 처리 장치
CN112992481A (zh) * 2021-02-04 2021-06-18 广州市蓝粉网络科技有限公司 一种片式绕线共模电感器

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6011418U (ja) * 1983-07-05 1985-01-25 パイオニア株式会社 可変インダクタンス装置
JPS62213216A (ja) * 1986-03-14 1987-09-19 Matsushita Electric Ind Co Ltd 可変インダクタ−
JP3843887B2 (ja) * 2002-05-24 2006-11-08 松下電器産業株式会社 高周波解凍装置
TWI278877B (en) * 2003-09-17 2007-04-11 Pulse Eng Inc Controlled inductance device and method
US7777152B2 (en) * 2006-06-13 2010-08-17 Applied Materials, Inc. High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck
JP5042661B2 (ja) * 2007-02-15 2012-10-03 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット
JP4903610B2 (ja) * 2007-03-27 2012-03-28 東京エレクトロン株式会社 プラズマ処理装置
JP5301812B2 (ja) * 2007-11-14 2013-09-25 東京エレクトロン株式会社 プラズマ処理装置
JP2010283273A (ja) * 2009-06-08 2010-12-16 Hitachi Kokusai Electric Inc インダクタンス微調整装置
JP5643062B2 (ja) * 2009-11-24 2014-12-17 東京エレクトロン株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
TWI562684B (fr) 2016-12-11
JP2014003179A (ja) 2014-01-09
KR102070471B1 (ko) 2020-01-29
KR20150024303A (ko) 2015-03-06
WO2013190805A1 (fr) 2013-12-27
TW201414361A (zh) 2014-04-01

Similar Documents

Publication Publication Date Title
JP6001932B2 (ja) プラズマ処理装置及びフィルタユニット
KR102580823B1 (ko) 플라즈마 처리 장치
JP5643062B2 (ja) プラズマ処理装置
JP6027374B2 (ja) プラズマ処理装置及びフィルタユニット
US9530619B2 (en) Plasma processing apparatus and filter unit
KR102137617B1 (ko) 플라즈마 처리 장치
TWI472267B (zh) Plasma processing device
TWI674615B (zh) 電漿處理裝置
TWI730370B (zh) 電漿處理裝置
JP6081292B2 (ja) プラズマ処理装置
KR101811904B1 (ko) 무선 주파수 (ｒｆ) 전력 필터들 및 ｒｆ 전력 필터들을 포함하는 플라즈마 프로세싱 시스템들
JP7094856B2 (ja) フィルタユニットの調整方法およびプラズマ処理装置
US9754766B2 (en) Plasma processing apparatus

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150331

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20160408

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160513

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160608

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160708

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160727

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160812

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160902

R150 Certificate of patent or registration of utility model

Ref document number: 6001932

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250