WO2013190805A1 - Dispositif de traitement au plasma et élément filtrant - Google Patents

Dispositif de traitement au plasma et élément filtrant Download PDF

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Publication number
WO2013190805A1
WO2013190805A1 PCT/JP2013/003683 JP2013003683W WO2013190805A1 WO 2013190805 A1 WO2013190805 A1 WO 2013190805A1 JP 2013003683 W JP2013003683 W JP 2013003683W WO 2013190805 A1 WO2013190805 A1 WO 2013190805A1
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WO
WIPO (PCT)
Prior art keywords
coil
plasma processing
processing apparatus
filter
frequency
Prior art date
Application number
PCT/JP2013/003683
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English (en)
Japanese (ja)
Inventor
望 永島
直彦 奥西
薫 大橋
大助 藤山
Original Assignee
東京エレクトロン株式会社
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Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to KR1020147029205A priority Critical patent/KR102070471B1/ko
Publication of WO2013190805A1 publication Critical patent/WO2013190805A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits
    • H05H2242/26—Matching networks

Definitions

  • the present invention relates to a plasma processing apparatus for performing plasma processing on a substrate to be processed using high frequency, and in particular, high frequency noise that enters a line such as a power supply line or a signal line from a high frequency electrode or other electrical member in a processing container.
  • the present invention relates to a plasma processing apparatus provided with a filter for shutting off.
  • control of plasma density distribution on the substrate to be processed semiconductor wafer, glass substrate, etc.
  • control of substrate temperature or temperature distribution Is very important. If the temperature control of the substrate is not properly performed, the substrate surface reaction and thus the uniformity of process characteristics cannot be secured, and the manufacturing yield of the semiconductor device or the display device is lowered.
  • a mounting table or susceptor for mounting a substrate to be processed in a chamber of a plasma processing apparatus functions as a high-frequency electrode that applies a high frequency to a plasma space, and electrostatically attracts the substrate.
  • a function of a temperature control unit for controlling the substrate to a predetermined temperature by heat transfer Regarding the temperature control function, it is desired that the distribution of heat input characteristics to the substrate due to non-uniformity of radiant heat from plasma and chamber walls and the heat distribution by the substrate support structure can be corrected appropriately.
  • a heater system in which a heating element that generates heat when energized is incorporated in the susceptor and the Joule heat generated by the heating element is controlled is often used.
  • a part of the high frequency applied to the susceptor from the high frequency power source tends to enter the heater power supply line from the heating element as noise. If high-frequency noise passes through the heater power supply line and reaches the heater power supply, the operation or performance of the heater power supply may be impaired. Further, when a high-frequency current flows on the heater power supply line, high-frequency power is wasted.
  • a filter on the heater power supply line for attenuating or preventing high-frequency noise coming from a heating element with a built-in susceptor.
  • this type of filter is placed outside the processing vessel directly under the susceptor.
  • Patent Document 1 describes the stability of filter performance in the plasma processing apparatus that blocks high-frequency noise that enters a power supply line, a signal line, or the like from a high-frequency electrode or other electrical member in a processing container. And a filter technique that improves reproducibility.
  • This filter technology uses a regular multiple parallel resonance characteristic of a distributed constant line, so that only one coil can be accommodated in the filter, and a stable high-frequency noise cutoff characteristic with little machine difference can be obtained.
  • the present applicant has disclosed a technique of a parallel resonance frequency adjustment unit that can adjust by shifting at least one of a plurality of parallel resonance frequencies by locally changing the characteristic impedance of the distributed constant line.
  • a parallel resonance frequency adjusting unit According to the parallel resonance frequency adjusting unit, one of the plurality of parallel resonance frequencies can be matched or approximated to the frequency of the high frequency noise to be blocked, so that a desired sufficiently high impedance with respect to the frequency of the high frequency noise. Can be given.
  • the heater power supply can be reliably protected and the reproducibility and reliability of the plasma process can be improved.
  • process characteristics or process results on the substrate may be biased in the circulation direction or the azimuth direction depending on the position of the filter.
  • the etching rate on the substrate tends to show a profile that increases or decreases in the vicinity of the position immediately above the filter in the azimuth direction.
  • the heating element inside the susceptor is divided into a plurality of zones and independent temperature control is performed for each zone, a plurality of filters corresponding to each of the plurality of zones are disposed here under the processing container. Therefore, the uneven etching rates due to these filters are overlapped, and the profile is likely to be more complicated and non-uniform.
  • the inventor examined the cause, among the high-frequency noise entering the power supply line from the heating element inside the susceptor, even if the high-frequency (fundamental wave) noise used for plasma processing is blocked as designed by the filter, It has been found that when the impedance of the filter is not sufficiently high with respect to harmonics having a frequency that is an integral multiple of the fundamental wave, particularly high-frequency second-order harmonics used for plasma generation, the above-described process characteristic deviation occurs.
  • the parallel resonance frequency adjusting unit as described above does not function so effectively for this kind of process characteristic bias. That is, when the position of a member (typically a ring) that gives local changes to the characteristic impedance of the distributed constant line is adjusted in the axial direction in the parallel resonance frequency adjustment unit, all the parallel resonance frequencies are independent in their own periods. Therefore, it is difficult to stably and reliably give a sufficiently large impedance to both a specific fundamental wave and a specific harmonic.
  • the present invention has been made in view of the above-described problems of the prior art, and harmful high-frequency noise that enters a line such as a power supply line or a signal line from a high-frequency electrode or other electrical member in a processing container.
  • the present invention provides a plasma processing apparatus and a filter unit that provide a sufficiently large impedance in a simple and stable manner to improve the reproducibility and reliability of a plasma process.
  • a plasma processing apparatus includes a processing container in which plasma processing is performed, an electrical member provided in the processing container, and an external circuit in which the electrical member is disposed outside the processing container.
  • a coil inductance adjusting unit for adjusting the inductance of the coil.
  • the plasma processing apparatus attenuates or prevents high-frequency noise on a line connecting an electric member provided in a processing vessel in which plasma processing is performed and an external circuit of a power system or a signal system.
  • the impedance of the filter in particular, the impedance with respect to the frequency of the high frequency noise to be attenuated or blocked can be easily and arbitrarily adjusted.
  • the filter unit according to the first aspect of the present invention is a plasma processing in which an electrical member in a processing container in which a plasma processing is performed is electrically connected to an external circuit disposed outside the processing container via a line.
  • a filter unit provided in the middle of the line for attenuating or preventing high-frequency noise of a predetermined frequency entering the line from the electrical member toward the external circuit, A coil constituting part of the coil; and a coil inductance adjusting unit for adjusting the inductance of the coil.
  • the filter unit includes an inductance of a coil constituting a part of a line on a line connecting an electric member provided in a processing vessel in which plasma processing is performed and an external circuit of a power system or a signal system. Is adjusted by the coil inductance adjusting unit, the impedance of the filter unit, in particular, the impedance to the frequency of the high frequency noise to be attenuated or blocked can be easily and arbitrarily adjusted.
  • a plasma processing apparatus includes a processing container in which plasma processing is performed, a first electrode disposed in the processing container, a heating element provided in the first electrode, and the heat generation.
  • a power supply line for electrically connecting a body to a heater power source disposed outside the processing container, and attenuating or preventing high-frequency noise of a predetermined frequency that enters the power supply line via the heating element
  • a filter including a coil for adjusting the coil, and a coil inductance adjusting unit for adjusting the inductance of the coil.
  • the plasma processing apparatus is provided on a power supply line that connects a heating element provided in a first electrode arranged in a processing vessel in which plasma processing is performed and a heater power source arranged outside the processing vessel.
  • the filter unit according to the second aspect of the present invention is configured such that a heating element provided on a first electrode in a processing container in which plasma processing is performed is connected to a heater power source disposed outside the processing container via a power supply line.
  • An electrically connected plasma processing apparatus is provided in the middle of the power supply line to attenuate or prevent high-frequency noise of a predetermined frequency that enters the power supply line from the heating element toward the heater power supply.
  • the filter unit includes a coil that forms part of the power supply line, and a coil inductance adjustment unit that adjusts the inductance of the coil.
  • the filter unit according to the second aspect is provided on a power supply line that connects a heating element provided in a first electrode arranged in a processing vessel in which plasma processing is performed and a heater power source arranged outside the processing vessel.
  • the plasma processing apparatus or the filter unit of the present invention harmful high frequencies entering the lines such as the power supply line and the signal line from the high frequency electrode and other electrical members in the processing container by the configuration and operation as described above.
  • the reproducibility and reliability of the plasma process can be improved by giving a sufficiently large impedance to the noise simply and stably.
  • FIG. 1 It is sectional drawing which shows the structure of the plasma processing apparatus in one Embodiment of this invention. It is a figure which shows the circuit structure of the heater electric power feeding part for supplying electric power to the heat generating body of a susceptor in embodiment. It is a figure which shows the structural example of the heat generating body in embodiment. It is a longitudinal cross-sectional view which shows the structure of the filter unit in embodiment. It is a cross-sectional view which shows the structure of the filter unit in embodiment. It is a perspective view which shows the external appearance structure of the coil winding of two systems of air-core coils with which a common rod axis
  • FIG. 1 shows the configuration of a plasma processing apparatus in one embodiment of the present invention.
  • This plasma processing apparatus is configured as a capacitive coupling type plasma etching apparatus of a lower two frequency application system, and has a cylindrical chamber (processing container) 10 made of metal such as aluminum or stainless steel. The chamber 10 is grounded.
  • a disk-shaped susceptor 12 on which a semiconductor wafer W is placed as a substrate to be processed is horizontally disposed as a lower electrode.
  • the susceptor 12 is made of aluminum, for example, and is supported ungrounded by an insulating cylindrical support 14 made of ceramic, for example, extending vertically upward from the bottom of the chamber 10.
  • An annular exhaust path 18 is formed between the conductive cylindrical support portion 16 extending vertically upward from the bottom of the chamber 10 along the outer periphery of the insulating cylindrical support portion 14 and the inner wall of the chamber 10.
  • An exhaust port 20 is provided at the bottom of the path 18.
  • An exhaust device 24 is connected to the exhaust port 20 via an exhaust pipe 22.
  • the exhaust device 24 includes a vacuum pump such as a turbo molecular pump, and can reduce the processing space in the chamber 10 to a desired degree of vacuum.
  • a gate valve 26 that opens and closes the loading / unloading port of the semiconductor wafer W is attached to the side wall of the chamber 10.
  • the susceptor 12 is electrically connected to first and second high frequency power supplies 28 and 30 via a matching unit 32 and a power feed rod 34.
  • the first high-frequency power supply 28 outputs a first high-frequency HF having a constant frequency (usually 27 MHz or higher, preferably 60 MHz or higher) that mainly contributes to plasma generation.
  • the second high-frequency power supply 30 outputs a second high-frequency LF having a constant frequency (usually 13 MHz or less) that mainly contributes to the drawing of ions into the semiconductor wafer W on the susceptor 12.
  • the matching unit 32 accommodates first and second matching units (not shown) for matching impedance between the first and second high frequency power supplies 28 and 30 and the plasma load.
  • the power feed rod 34 is made of a cylindrical or columnar conductor having a predetermined outer diameter, and its upper end is connected to the center of the lower surface of the susceptor 12, and its lower end is the first and second matching units in the matching unit 32. Connected to the high frequency output terminal.
  • a cylindrical conductor cover 35 is provided between the bottom surface of the chamber 10 and the matching unit 32 so as to surround the power supply rod 34. More specifically, a circular opening having a predetermined diameter that is slightly larger than the outer diameter of the power supply rod 34 is formed on the bottom surface (lower surface) of the chamber 10, and the upper end of the conductor cover 35 is connected to the chamber opening. In addition, the lower end of the conductor cover 35 is connected to the ground (return) terminal of the matching unit.
  • the susceptor 12 has a diameter or diameter that is slightly larger than that of the semiconductor wafer W.
  • the upper surface of the susceptor 12 is partitioned into a central region that is substantially the same shape (circular) and substantially the same size as the wafer W, that is, a wafer mounting portion, and an annular peripheral portion that extends outside the wafer mounting portion. .
  • a semiconductor wafer W to be processed is placed on the wafer placement portion.
  • a ring-shaped plate material so-called a focus ring 36 having an inner diameter larger than the diameter of the semiconductor wafer W is attached.
  • the focus ring 36 is made of, for example, any one of Si, SiC, C, and SiO 2 depending on the material to be etched of the semiconductor wafer W.
  • the wafer mounting portion on the upper surface of the susceptor 12 is provided with an electrostatic chuck 38 and a heating element 40 for wafer adsorption.
  • the electrostatic chuck 38 encloses a DC electrode 44 in a film-like or plate-like dielectric 42 integrally formed on or integrally fixed to the upper surface of the susceptor 12, and the DC electrode 44 is disposed outside the chamber 10.
  • the external DC power supply 45 is electrically connected via a switch 46, a high-resistance resistor 48, and a DC high-voltage line 50.
  • the DC high-voltage line 50 is a covered wire, passes through the cylindrical lower power feed rod 34, penetrates the susceptor 12 from below, and is connected to the DC electrode 44 of the electrostatic chuck 38.
  • the heating element 40 is composed of, for example, a spiral resistance heating wire enclosed in a dielectric 42 together with the DC electrode 44 of the electrostatic chuck 38.
  • the radial direction of the susceptor 12 is formed. 2 is divided into an inner heating wire 40 (IN) and an outer heating wire 40 (OUT).
  • the inner heating wire 40 (IN) is a dedicated wire disposed outside the chamber 10 via the insulation-coated power supply conductor 52 (IN), the filter unit 54 (IN), and the electric cable 56 (IN). It is electrically connected to the heater power source 58 (IN).
  • the outer heating wire 40 (OUT) is a dedicated heater power source which is also disposed outside the chamber 10 via the insulation-coated power supply conductor 52 (OUT), the filter unit 54 (OUT) and the electric cable 56 (OUT). 58 (OUT) is electrically connected.
  • the filter units 54 (IN) and 54 (OUT) are main features in this embodiment, and the internal configuration and operation will be described in detail later.
  • an annular refrigerant chamber or refrigerant passage 60 extending in the circumferential direction is provided inside the susceptor 12.
  • a refrigerant having a predetermined temperature such as cooling water cw, is circulated and supplied to the refrigerant chamber 60 from a chiller unit (not shown) via a refrigerant supply pipe.
  • the temperature of the susceptor 12 can be controlled to decrease according to the temperature of the refrigerant.
  • a heat transfer gas such as He gas from a heat transfer gas supply unit (not shown) is passed through the gas supply pipe and the gas passage 62 inside the susceptor 12.
  • a heat transfer gas such as He gas from a heat transfer gas supply unit (not shown) is passed through the gas supply pipe and the gas passage 62 inside the susceptor 12.
  • a shower head 64 that is parallel to the susceptor 12 and also serves as an upper electrode.
  • the shower head 64 includes an electrode plate 66 facing the susceptor 12 and an electrode support 68 that detachably supports the electrode plate 66 from the back (upper side) thereof.
  • a gas chamber 70 is provided inside the electrode support 68.
  • a number of gas discharge holes 72 penetrating from the gas chamber 70 to the susceptor 12 side are formed in the electrode support 68 and the electrode plate 66.
  • a space SP between the electrode plate 66 and the susceptor 12 is a plasma generation space or a processing space.
  • a gas supply pipe 76 from the processing gas supply unit 74 is connected to the gas introduction port 70 a provided in the upper part of the gas chamber 70.
  • the electrode plate 66 is made of, for example, Si, SiC, or C
  • the electrode support 68 is made of, for example, anodized aluminum.
  • Each part in the plasma etching apparatus for example, the exhaust device 24, the high frequency power supplies 28 and 30, the switch 46 of the DC power supply 45, the heater power supplies 58 (IN) and 58 (OUT), a chiller unit (not shown), a heat transfer gas supply section.
  • Individual operations such as (not shown) and the processing gas supply unit 74 and the operation (sequence) of the entire apparatus are controlled by a control unit 75 including a microcomputer.
  • the gate valve 26 is opened, and the semiconductor wafer W to be processed is loaded into the chamber 10 and placed on the electrostatic chuck 38.
  • an etching gas (generally a mixed gas) is introduced into the chamber 10 from the processing gas supply unit 74 at a predetermined flow rate, and the pressure in the chamber 10 is set to a set value by the exhaust device 24.
  • the first and second high-frequency power supplies 28 and 30 are turned on to output the first high-frequency HF and the second high-frequency LF at predetermined powers, respectively.
  • the high-frequency HF and LF are supplied to the matching unit 32 and the power supply rod 34.
  • the heat transfer gas (He gas) is supplied from the heat transfer gas supply unit to the contact interface between the electrostatic chuck 38 and the semiconductor wafer W, and the electrostatic chuck switch 46 is turned on to perform electrostatic adsorption.
  • the heat transfer gas is confined in the contact interface by force.
  • the heater power supplies 58 (IN) and 58 (OUT) are turned on to cause the inner heating element 40 (IN) and the outer heating element 40 (OUT) to generate heat with independent Joule heat, respectively. Control the temperature distribution to the set value.
  • the etching gas discharged from the shower head 64 is turned into plasma by high-frequency discharge between the electrodes 12 and 64, and the film to be processed on the surface of the semiconductor wafer W is etched into a desired pattern by radicals and ions generated by the plasma. .
  • This capacitively coupled plasma etching apparatus applies a first high-frequency HF having a relatively high frequency (preferably 60 MHz or more) suitable for plasma generation to the susceptor 12 to increase the density of the plasma in a preferable dissociated state, thereby lowering the pressure.
  • a highly selective anisotropic etching is performed on the semiconductor wafer W on the susceptor 12 by applying a second high frequency LF having a relatively low frequency (13 MHz) suitable for ion attraction to the susceptor 12. be able to.
  • chiller cooling and heater heating are simultaneously applied to the susceptor 12, and the heater heating is controlled independently at the central portion and the edge portion in the radial direction. Switching or raising / lowering temperature is possible, and the profile of the temperature distribution can be controlled arbitrarily or in various ways. [Circuit configuration in the filter unit]
  • FIG. 2 shows a circuit configuration of a heater power supply unit for supplying power to the heating element 40 provided in the susceptor 12.
  • individual heater power supply units having substantially the same circuit configuration are connected to each of the inner heating wire 40 (IN) and the outer heating wire 40 (OUT) of the heating element 40, and the inner heating wire is connected.
  • the heat generation amount or the heat generation temperature of 40 (IN) and the outer heating wire 40 (OUT) are independently controlled.
  • the configuration and operation of the heater power feeding unit for the inner heating wire 40 (IN) will be described.
  • the configuration and operation of the heater power supply unit for the outer heating wire 40 (OUT) are exactly the same.
  • the heater power source 58 (IN) is an AC output type power source that performs a commercial frequency switching (ON / OFF) operation using, for example, an SSR, and is connected to the inner heating element 40 (IN) by a closed loop circuit. More specifically, of the pair of output terminals of the heater power supply 58 (IN), the first output terminal is the first of the inner heating line 40 (IN) through the first power supply line (power supply line) 100 (1). is connected to terminal h 1 electrically, a second output terminal electrically to the inner heating wire 40 the second terminal h 2 of (iN) via a second power supply line (power supply line) 100 (2) It is connected to the.
  • the filter unit 54 (IN) has first and second filters 102 (1) and 102 (2) provided in the middle of the first and second power supply lines 100 (1) and 100 (2), respectively. ing.
  • the circuit configurations of both filters 102 (1) and 102 (2) are substantially the same.
  • both filters 102 (1) and 102 (2) have coils 104 (1) and 104 (2) grounded via capacitors 106 (1) and 106 (2), respectively.
  • One terminal of the coils 104 (1), 104 (2) or the filter terminals T (1), T (2) are connected to both terminals h 1 of the inner heating wire 40 (IN) through a pair of power supply conductors 52 (IN). , H 2 , and capacitors 106 (1), 106 (2) between the other terminals of the coils 104 (1), 104 (2) and a conductive member (eg, chamber 10) having a ground potential.
  • a conductive member eg, chamber 10
  • connection points n (1) and n (2) between the coils 104 (1) and 104 (2) and the capacitors 106 (1) and 106 (2) are connected to an electric cable (pair cable) 56 (IN). Are connected to the first and second output terminals of the heater power source 58 (IN), respectively.
  • the current output from the heater power supply 58 (IN) is the first power supply line 100 (1), that is, the electric cable 56 (IN), the coil 104 (1), and the coil in the positive cycle. It enters the inner heating wire 40 (IN) from one terminal h 1 through the feeding conductor 52 (IN), generates Joule heat by energization at each part of the inner heating wire 40 (IN), and exits from the other terminal h 2. Thereafter, the feedback is made through the second power supply line 100 (2), that is, the power supply conductor 52 (IN), the coil 104 (2), and the electric cable 56 (IN). In the negative cycle, a current flows through the same circuit in the opposite direction.
  • the filter unit 54 (IN) includes a coil 104 (1) and a second filter 102 (1) of the first filter 102 (1) in a cylindrical outer conductor 110 made of, for example, aluminum.
  • the coil 104 (2) of 2) is accommodated coaxially, and the capacitor 106 of the first filter 102 (1) is placed in the capacitor box 112 made of, for example, aluminum on the opposite side of the filter terminals T (1) and T (2).
  • (1) and the capacitor 106 (2) (FIG. 2) of the second filter 102 (2) are accommodated together.
  • the outer conductor 110 is connected to a conductive member having a ground potential such as the chamber 10 by screws.
  • Each of the coils 104 (1) and 104 (2) is an air-core coil and functions as a power supply line that allows a sufficiently large current (for example, about 30A) to flow from the heater power supply 58 (IN) to the inner heating wire 40 (IN).
  • a sufficiently large current for example, about 30A
  • a thick coil wire and a large coil size for example, a diameter of 22 to 45 mm and a length of 130 to 280 mm.
  • both coils 104 (1) and 104 (2) are mounted on a cylindrical or columnar rod shaft 114 made of an insulator, such as a resin, which stands vertically on a capacitor box 112. It is mounted so that it can move freely in any direction.
  • both the coils 104 (1) and 104 (2) have the same winding interval d and coil length while overlapping and translating along the outer peripheral surface of the common rod shaft 114 in the axial direction as shown in FIG. It is spirally wound with s. As shown in FIG.
  • the coil conductors of both coils 104 (1) and 104 (2) are preferably made of a thin plate or a flat copper wire having the same cross-sectional area, and one air-core coil 104 (2 ) Is covered with an insulating tube 116.
  • the tube 116 not only has a function of preventing an electrical short circuit between the coils 104 (1) and 104 (2), but also closes a winding gap between the coils 104 (1) and 104 (2).
  • the winding interval d can be adjusted.
  • the tube 116 is made of an insulator having excellent elasticity, such as silicone rubber, and is formed thick.
  • the coil length s is set to a natural length as described later. It is shorter (shortened) than the state, and the amount of shortening is adjusted. In that case, the winding interval d can be adjusted within a range of about 2 mm to 3.2 mm, for example.
  • An upper connector 120 made of resin is attached to the opening at the upper end of the outer conductor 110 via an annular lid 118.
  • the upper end of the rod shaft 114 is fixed to the upper connector 120, and the upper ends of both the coils 104 (1) and 104 (2) are also fixed.
  • the upper ends of both coils 104 (1) and 104 (2) are electrically connected to the filter terminals T (1) and T (2) inside or around the connector 120, respectively.
  • the lower end of the rod shaft 114 is fixed to a resin-made lower connector 122 disposed on or above the capacitor box 112.
  • a pair of rigid connection conductors 124 (1) and 124 (2) extending downward from the lower surface of the lower connector 122 are electrically connected to the capacitors 106 (1) and 106 (2) in the capacitor box 112 (FIG. 2). ), And the connector 122 is physically fixed at a fixed position.
  • a resin coil receiving member 126 that is coupled to or engaged with the lower ends of both coils 104 (1) and 104 (2) is attached to the lower end of the rod shaft 114 so as to be slidable in the axial direction.
  • the coil receiving member 126 has a trunk portion 126a extending in the vertical direction and a pair of flange portions 126b and 126b extending in the opposite direction from the lower end portion of the trunk portion 126a in the lateral direction.
  • the body 126a is formed with a screw hole (female thread) 127 penetrating the center portion in the vertical direction. As shown in FIG.
  • the body 126a is fitted into a notch-shaped cavity 114a formed at the lower end of the rod shaft 114 so that it can move (slide) only in the axial direction, and both flange portions 126b and 126b protrude out of the rod shaft 114.
  • the lower ends of the coils 104 (1) and 104 (2) pass through the flanges 126b and 126b and connect to the connection conductors 124 (1) and 124 (2) inside or around the lower connector 122. Each is electrically connected.
  • the bolt (male screw) 128 inserted into the lower end portion of the rod shaft 114 is screwed into the screw hole (female screw) 127 of the body portion 126a of the coil receiving member 126.
  • a wrench 130 is applied to the head (for example, hexagonal hole) 128a of the bolt 128 through a tool passage hole (not shown) formed in the capacitor box 112 from below the filter unit 54 (IN), and the bolt
  • the coil receiving member 126 moves upward or downward along the rod shaft 114 while being coupled or engaged with the lower ends of the coils 104 (1) and 104 (2).
  • the notch-shaped cavity portion 114a of the rod shaft 114 that slidably supports the body portion 126a of the coil receiving member 126 and the screw hole formed in the body portion 126a of the coil receiving member 126.
  • the coil receiving member 126 is moved up and down along the rod shaft 114 and fixed at an arbitrary position by a (female screw) 127 and a bolt (male screw) 128 screwed into the screw hole (female screw) 127.
  • a feed screw mechanism 132 is configured.
  • a height adjusting unit 134 is configured.
  • a distributed constant line is provided between the coils 104 (1) and 104 (2) of the first and second filters 102 (1) and 102 (2) and the outer conductor 110. Is formed.
  • a general distributed constant line (especially a coaxial line) is different in that the center of the line is a rod-shaped cylindrical conductor, whereas the filter unit 54 (IN) uses a cylindrical coil as the central conductor.
  • the inductance L per unit length is considered to be predominantly the inductance due to this cylindrical coil.
  • the filter unit having such a distributed constant line When the filter unit having such a distributed constant line is viewed from the terminal T side, the opposite side is pseudo short-circuited by a capacitor having a large capacitance (for example, 5000 pF), so that a large impedance is repeated at a constant frequency interval. A frequency-impedance characteristic is obtained. Such impedance characteristics are obtained when the wavelength and the distributed line length are equal.
  • the coil length s (FIG. 4) in the axial direction is not the winding length of the coils 104 (1) and 104 (2), but the distributed line length. Since the coils 104 (1) and 104 (2) are used as the central conductor, L can be made much larger and ⁇ can be made smaller than in the case of a rod-shaped cylindrical conductor, so that a relatively short line Although it is long (coil length s), it is possible to realize an effective length equal to or greater than the wavelength, and it is possible to obtain an impedance characteristic that repeats having a large impedance at a relatively short frequency interval.
  • the characteristic impedance (particularly the inductance and capacitance per unit length) be constant on the distributed constant line formed between the coils 104 (1) and 104 (2) and the outer conductor 110.
  • the cylindrical coils 104 (1) and 104 (2) are coaxially arranged in the cylindrical outer conductor 110, so that the requirement of constant characteristic impedance is strictly satisfied. ing.
  • the allowable range generally 1 ⁇ 4 or less of the wavelength of the high frequency to be cut off). If it is within, the requirement of constant characteristic impedance is substantially satisfied.
  • each of the filters 102 (1) and 102 (2) it is possible to obtain a filter characteristic having multiple parallel resonance and excellent impedance characteristic stability and reproducibility.
  • the length s or the winding interval d of each of the coils 104 (1) and 104 (2) is variably adjusted using the coil length adjusting unit 134 as described above. By doing so, the inductances L 1 and L 2 of the coils 104 (1) and 104 (2) can be variably adjusted.
  • L 1 and L 2 of the coils 104 (1) and 104 (2) are given by, for example, the following equations (2) and (3), respectively.
  • L 1 ⁇ 0 ⁇ ⁇ ⁇ r 1 2 ⁇ n 2 / (s + k ⁇ r 1 )
  • L 2 ⁇ 0 ⁇ ⁇ ⁇ r 2 2 ⁇ n 2 / (s + k ⁇ r 2 )
  • ⁇ 0 the vacuum permeability
  • n is the number of turns of the coil
  • r 1 and r 2 are the radius of the coil
  • the elastically deformable tube 116 closes the winding gap of the coils 104 (1) and 104 (2).
  • the winding gap of the coils 104 (1) and 104 (2) is changed.
  • the winding interval d of the coils 104 (1) and 104 (2) changes so as to increase or decrease substantially uniformly or uniformly in each part. .
  • the ability to adjust the winding interval d in each part of the coils 104 (1) and 104 (2) substantially uniformly or uniformly is very important for ensuring the fineness, stability and reproducibility of the coil inductance adjustment. is important.
  • the inventor manufactured a prototype of the filter unit 54 (IN) ⁇ ⁇ ⁇ ⁇ in this embodiment, and adjusted the coil 104 (1) with a weaker adjustment and a stronger adjustment with the coil length adjustment unit 134. In each case, the frequency-impedance characteristics of the first filter 102 (1) viewed from the filter terminal T (1) were measured (acquired). FIG. 10 shows the measurement results.
  • each of the parallel multiple resonances in the impedance characteristic of the first filter 102 (1) when the compression of the coil 104 (1) is increased, that is, when the amount of shortening of the coil length s from the natural length is increased, each of the parallel multiple resonances in the impedance characteristic of the first filter 102 (1).
  • the higher the frequency the lower the impedance of the first filter 102 (1). This is mainly because the impedance of the capacitor 106 (1) decreases in proportion to the frequency.
  • FIG. 11 shows typical parallel resonance frequencies (f 1 , f 2 , f 5 , f 6 , f 12 , f 13 ) in the shortening amount of the coil 104 (1) and the impedance characteristic of the first filter 102 (1).
  • the correlation with the amount of change is shown.
  • the change rate (decrease rate) of each parallel resonance frequency (f 1 , f 2 ) with respect to the shortening amount of the coil 104 (1) is small, and the coil 104 (1) is shortened as the frequency is high. It can be seen that the change rate (decrease rate) of each parallel resonant frequency (f 5 , f 6 , f 12 , f 13 ) with respect to the quantity is large.
  • each parallel resonance frequency of the parallel multiple resonance is uniformly increased or increased.
  • the fundamental wave (first high frequency HF and second high frequency) used for plasma processing is adjusted by adjusting the length s (or winding interval d) of the coil 104 (1) using the coil length adjusting unit 134.
  • the impedance to a specific harmonic typically a second harmonic having twice the frequency of the first high frequency HF for plasma generation
  • the second harmonic is not changed much in the first filter 102 (1) with respect to the first high frequency HF (100 MHz).
  • the impedance to the wave (200 MHz) can be adjusted continuously or stepwise within a certain range.
  • the second filter 102 (2) also has the same effect as the first filter 102 (1) by adjusting the compression amount or length s of the coil 104 (2) by the coil length adjusting unit 134. can get. [Example 1]
  • the present inventor conducted an experiment for verifying the action of the filter units 54 (IN) and 54 (OUT) in the plasma etching apparatus of the above embodiment.
  • the case where the heating element 40 inside the susceptor 12 is electrically separated from the heater power feeding portion and the filter units 54 (IN) and 54 (OUT) are not disposed under the chamber 10 is used as a comparative reference example.
  • an etching process specifically organic film etching, was selected such that the etching rate on the semiconductor wafer W was substantially uniform in the azimuth angle direction.
  • the frequency of the first high frequency HF for plasma generation was 100 MHz
  • the frequency of the second high frequency LF for ion attraction was 13 MHz.
  • the filter units 54 (IN) and 54 (OUT) are arranged below the chamber 10 as in the above embodiment, and the heater power feeding unit is electrically connected to the heating element 40 inside the susceptor 12. Then, organic film etching was performed using the same recipe as the comparative reference example, using the impedance of each of the filter units 54 (IN) and 54 (OUT) ⁇ ⁇ ⁇ ⁇ for a specific frequency as a parameter.
  • the filter units 54 (IN) and 54 (OUT) are placed in the X direction which is point-symmetric with respect to a vertical line N passing through the center of the semiconductor wafer W (that is, the center of the susceptor 12). Positions X (IN) and X (OUT) (positions 20 to 25 mm from the wafer edge position). Then, the coil length adjusting unit 134 provided in the filter unit 54 (IN) is used to coil the coils 104 (1) of the first and second filters 102 (1) and 102 (2) in the filter unit 54 (IN).
  • the impedance Z (IN) of both filters 102 (1), 102 (2) with respect to the second harmonic (200 MHz) of the first high frequency HF (100 MHz) is set to 40 ⁇ . , 45 ⁇ , 50 ⁇ , 55 ⁇ , and 60 ⁇ were selected.
  • the coil length adjusting unit 134 provided in the filter unit 54 (OUT) causes the coils 104 (1) of the first and second filters 102 (1) and 102 (2) in the filter unit 54 (OUT).
  • the impedance Z (OUT) of both filters 102 (1), 102 (1) for the second harmonic (200 MHz) is 40 ⁇ , 45 ⁇ , 50 ⁇ , 55 ⁇ , 60 ⁇ . I chose 5 ways.
  • FIG. 14 shows the experimental results of this example.
  • the second harmonic (200 MHz) When the impedance Z (OUT) of the filter unit 54 (OUT) is increased from 40 ⁇ ⁇ 45 ⁇ ⁇ 50 ⁇ , the deviation of the etching rate between the X direction and the Y direction is reduced.
  • the embodiment (FIG. 14) in which the filter units 54 (IN) and 54 (OUT) are provided has an etching rate. Is one step lower. This is because when the filter units 54 (IN), 54 (OUT) or the heater power supply unit is connected to the heating element 40 inside the susceptor 12, one of the high frequency HF, LF applied to the susceptor 12 from the high frequency power supplies 28, 30. Flows into the power supply lines 52 (IN) and 52 (OUT) through the inner and outer heating elements 40 (IN) and 40 (OUT), so that the high frequency HF and LF consumed for plasma generation and ion attraction This is because the power of is reduced.
  • the example is far superior to the comparative reference example. [Example 2]
  • the present inventor conducted another experiment for verifying the action of the filter units 54 (IN) and 54 (OUT) in the plasma etching apparatus of the above embodiment. Also in this second experiment, the case where the filter units 54 (IN) and 54 (OUT) are not disposed under the chamber 10 is used as a comparative reference example. In this comparative reference example, the etching rate on the semiconductor wafer W is in the azimuth direction. Dry cleaning was selected as another etching process that is substantially uniform.
  • FIG. 16 shows the experimental results of the second example. Even in the second embodiment, the impedances Z (IN) and Z (OUT) of both the filter units 54 (IN) and 54 (OUT) are aligned, although not as much as in the first experiment. The effect of improving the uniformity of the etching rate in the azimuth angle direction was confirmed as the film was higher and higher. [Other Embodiments or Modifications]
  • coils 104 (1) and 104 (2) A rod-shaped screw shaft 140 penetrating through the inside of the coil 104 and a coil receiving member 142 attached to the screw shaft 140 so as to be movable in the coil axis direction while being coupled or engaged with one end of the coils 104 (1), 104 (2).
  • a configuration having a nut 146 that is screwed onto the screw shaft 140 to fix the coil receiving member 142 at a desired position via the washer 144 is also possible.
  • each coil 104 (1), 104 (2) is wrapped in the above-described elastic tube 116 to form a coil winding structure without a gap. Is preferred.
  • the heating element 40 provided in the susceptor 12 is divided into three or more systems in the radial direction, and three or more filter units corresponding to each are arranged below the chamber 10 with an appropriate distance interval in the azimuth direction.
  • the configuration of the above embodiment can be applied to each filter unit. The same applies to the case where only one filter unit is used without dividing the heating element 40.
  • the coil length adjustment unit 134 is used to shorten the coils 104 (1) and 104 (2) and adjust the coil length s by changing the shortening amount.
  • each resonance frequency of the parallel multiple resonance in the impedance characteristics of the filter is changed (shifted) in the direction of uniform increase. It has been confirmed that the amount of change (shift amount) of each resonance frequency increases as the coil extension amount increases, and the rate of change increases as the frequency increases.
  • the input ends (upper ends) of the coils 104 (1) and 104 (2) are fixed as viewed from the high frequency noise entering the power supply lines 100 (1) and 100 (2) through the heating element 40.
  • the coil length adjustment part 134 was attached to the output end (lower end) side of the coils 104 (1) and 104 (2).
  • the output ends (lower end) of the coils 104 (1) and 104 (2) are fixed, and the coil length adjusting unit 134 is arranged on the input end (upper end) side of the coils 104 (1) and 104 (2). It is also possible to install the unit.
  • the above embodiment is a lower two frequency application type capacitively coupled plasma etching apparatus in which the first high frequency HF for plasma generation and the second high frequency LF for ion attraction are applied to the susceptor 12 in the chamber 10 in a superimposed manner. Noise of both frequencies is attenuated on the pair of heater power supply lines 100 (1) and 100 (2) that electrically connect the heating element 40 incorporated in the susceptor 12 and the heater power supply 58 installed outside the chamber 10. It was related to the filter. However, a capacitively coupled plasma etching apparatus of an upper and lower two frequency application system that applies a first high frequency HF for plasma generation to the upper electrode 64 and a second high frequency LF for ion attraction to the susceptor 12 or the susceptor 12 is applied. Also in the capacitively coupled plasma etching apparatus of the lower one frequency application system that applies a single high frequency, the filter or filter unit of the above embodiment can be suitably applied as it is.
  • the present invention is not limited to a filter for a power supply line such as a heater power supply line, but a predetermined electric member provided in the chamber and an external circuit of a power system or a signal system provided outside the chamber. Can be applied to any filter or filter unit provided on a pair of lines or a single line.
  • the present invention is not limited to a capacitively coupled plasma etching apparatus, but can be applied to a microwave plasma etching apparatus, an inductively coupled plasma etching apparatus, a helicon wave plasma etching apparatus, and the like, and further, plasma CVD, plasma oxidation,
  • the present invention can also be applied to other plasma processing apparatuses such as plasma nitriding and sputtering.
  • the substrate to be processed in the present invention is not limited to a semiconductor wafer, and a flat panel display, an organic EL, various substrates for solar cells, a photomask, a CD substrate, a printed substrate, and the like are also possible.

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  • Engineering & Computer Science (AREA)
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  • Analytical Chemistry (AREA)
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Abstract

L'objet de la présente invention est d'appliquer de façon aisée, stable et fiable une impédance suffisamment importante sur un bruit à haute fréquence susceptible de provoquer des dégâts qui entre à partir d'une électrode haute fréquence ou autre élément électrique à l'intérieur d'un récipient de traitement sur une ligne électrique, un circuit d'acheminement des signaux ou autre circuit, et d'améliorer la reproductibilité et la fiabilité d'un processus par plasma. Pour ce faire, la présente invention a trait à un élément filtrant (54 (IN)) qui est doté d'une partie de réglage de la longueur de bobine (134) permettant de régler soit la ou les longueurs de bobines (104 (1), 104 (2)) soit un écart entre bobines (d) qui est constituée : d'un corps de tige (114) qui passe par oscillation par le côté intérieur des bobines (104 (1), 104 (2)) ; d'un élément de réception de bobine (126) qui est fixé coulissant sur le corps de tige (114) dans la direction de l'axe de la bobine tout en étant soit couplé soit ajusté à des parties d'extrémité inférieures des bobines (104 (1), 104 (2)) ; et d'un mécanisme de vis sans fin d'alimentation (132).
PCT/JP2013/003683 2012-06-19 2013-06-12 Dispositif de traitement au plasma et élément filtrant WO2013190805A1 (fr)

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CN111081518A (zh) * 2018-10-19 2020-04-28 东京毅力科创株式会社 滤波器单元的调整方法和等离子体处理装置
JP2021177539A (ja) * 2020-05-01 2021-11-11 東京エレクトロン株式会社 エッチング装置及びエッチング方法
TWI767655B (zh) * 2020-05-01 2022-06-11 日商東京威力科創股份有限公司 蝕刻裝置及蝕刻方法

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JP6483533B2 (ja) * 2015-06-03 2019-03-13 京セラ株式会社 試料保持具およびこれを用いたプラズマエッチング装置
JP6637846B2 (ja) * 2016-06-23 2020-01-29 東京エレクトロン株式会社 フィルタを設計する方法
JP6698502B2 (ja) 2016-11-21 2020-05-27 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP6832800B2 (ja) * 2017-06-21 2021-02-24 東京エレクトロン株式会社 プラズマ処理装置
US10812033B2 (en) * 2017-12-29 2020-10-20 Lam Research Corporation High-power radio-frequency spiral-coil filter
JP7125058B2 (ja) * 2018-12-06 2022-08-24 東京エレクトロン株式会社 プラズマ処理装置、及び、プラズマ処理方法
KR20220061617A (ko) 2020-11-06 2022-05-13 세메스 주식회사 기판 처리 장치
CN112992481A (zh) * 2021-02-04 2021-06-18 广州市蓝粉网络科技有限公司 一种片式绕线共模电感器

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CN111081518A (zh) * 2018-10-19 2020-04-28 东京毅力科创株式会社 滤波器单元的调整方法和等离子体处理装置
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TWI767655B (zh) * 2020-05-01 2022-06-11 日商東京威力科創股份有限公司 蝕刻裝置及蝕刻方法

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TW201414361A (zh) 2014-04-01

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