KR102070471B1 - 플라즈마 처리 장치 및 필터 유닛 - Google Patents

플라즈마 처리 장치 및 필터 유닛 Download PDF

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Publication number
KR102070471B1
KR102070471B1 KR1020147029205A KR20147029205A KR102070471B1 KR 102070471 B1 KR102070471 B1 KR 102070471B1 KR 1020147029205 A KR1020147029205 A KR 1020147029205A KR 20147029205 A KR20147029205 A KR 20147029205A KR 102070471 B1 KR102070471 B1 KR 102070471B1
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KR
South Korea
Prior art keywords
coil
plasma processing
line
filter
high frequency
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KR1020147029205A
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English (en)
Korean (ko)
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KR20150024303A (ko
Inventor
노조무 나가시마
나오히코 오쿠니시
가오루 오오하시
다이스케 후지야마
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20150024303A publication Critical patent/KR20150024303A/ko
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Publication of KR102070471B1 publication Critical patent/KR102070471B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits
    • H05H2242/26—Matching networks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020147029205A 2012-06-19 2013-06-12 플라즈마 처리 장치 및 필터 유닛 KR102070471B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2012-137958 2012-06-19
JP2012137958A JP6001932B2 (ja) 2012-06-19 2012-06-19 プラズマ処理装置及びフィルタユニット
US201261664228P 2012-06-26 2012-06-26
US61/664,228 2012-06-26
PCT/JP2013/003683 WO2013190805A1 (fr) 2012-06-19 2013-06-12 Dispositif de traitement au plasma et élément filtrant

Publications (2)

Publication Number Publication Date
KR20150024303A KR20150024303A (ko) 2015-03-06
KR102070471B1 true KR102070471B1 (ko) 2020-01-29

Family

ID=49768420

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147029205A KR102070471B1 (ko) 2012-06-19 2013-06-12 플라즈마 처리 장치 및 필터 유닛

Country Status (4)

Country Link
JP (1) JP6001932B2 (fr)
KR (1) KR102070471B1 (fr)
TW (1) TW201414361A (fr)
WO (1) WO2013190805A1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2666072C2 (ru) 2014-01-10 2018-09-05 Ниссан Мотор Ко., Лтд. Устройство управления для электромоторного транспортного средства и способ управления для электромоторного транспортного средства
JP6218650B2 (ja) * 2014-03-11 2017-10-25 東京エレクトロン株式会社 プラズマ処理装置
JP6483533B2 (ja) * 2015-06-03 2019-03-13 京セラ株式会社 試料保持具およびこれを用いたプラズマエッチング装置
JP6637846B2 (ja) * 2016-06-23 2020-01-29 東京エレクトロン株式会社 フィルタを設計する方法
JP6698502B2 (ja) 2016-11-21 2020-05-27 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP6832800B2 (ja) * 2017-06-21 2021-02-24 東京エレクトロン株式会社 プラズマ処理装置
US10812033B2 (en) * 2017-12-29 2020-10-20 Lam Research Corporation High-power radio-frequency spiral-coil filter
JP7094856B2 (ja) * 2018-10-19 2022-07-04 東京エレクトロン株式会社 フィルタユニットの調整方法およびプラズマ処理装置
JP7125058B2 (ja) * 2018-12-06 2022-08-24 東京エレクトロン株式会社 プラズマ処理装置、及び、プラズマ処理方法
JP6938746B1 (ja) * 2020-05-01 2021-09-22 東京エレクトロン株式会社 エッチング装置及びエッチング方法
TWI767655B (zh) * 2020-05-01 2022-06-11 日商東京威力科創股份有限公司 蝕刻裝置及蝕刻方法
KR20220061617A (ko) 2020-11-06 2022-05-13 세메스 주식회사 기판 처리 장치
CN112992481A (zh) * 2021-02-04 2021-06-18 广州市蓝粉网络科技有限公司 一种片式绕线共模电感器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003347035A (ja) * 2002-05-24 2003-12-05 Matsushita Electric Ind Co Ltd 高周波解凍装置
JP2008244145A (ja) * 2007-03-27 2008-10-09 Tokyo Electron Ltd プラズマ処理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6011418U (ja) * 1983-07-05 1985-01-25 パイオニア株式会社 可変インダクタンス装置
JPS62213216A (ja) * 1986-03-14 1987-09-19 Matsushita Electric Ind Co Ltd 可変インダクタ−
TWI278877B (en) * 2003-09-17 2007-04-11 Pulse Eng Inc Controlled inductance device and method
US7777152B2 (en) * 2006-06-13 2010-08-17 Applied Materials, Inc. High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck
JP5042661B2 (ja) * 2007-02-15 2012-10-03 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット
JP5301812B2 (ja) * 2007-11-14 2013-09-25 東京エレクトロン株式会社 プラズマ処理装置
JP2010283273A (ja) * 2009-06-08 2010-12-16 Hitachi Kokusai Electric Inc インダクタンス微調整装置
JP5643062B2 (ja) * 2009-11-24 2014-12-17 東京エレクトロン株式会社 プラズマ処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003347035A (ja) * 2002-05-24 2003-12-05 Matsushita Electric Ind Co Ltd 高周波解凍装置
JP2008244145A (ja) * 2007-03-27 2008-10-09 Tokyo Electron Ltd プラズマ処理装置

Also Published As

Publication number Publication date
JP6001932B2 (ja) 2016-10-05
TWI562684B (fr) 2016-12-11
JP2014003179A (ja) 2014-01-09
KR20150024303A (ko) 2015-03-06
WO2013190805A1 (fr) 2013-12-27
TW201414361A (zh) 2014-04-01

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