TWI562684B - - Google Patents
Info
- Publication number
- TWI562684B TWI562684B TW102121459A TW102121459A TWI562684B TW I562684 B TWI562684 B TW I562684B TW 102121459 A TW102121459 A TW 102121459A TW 102121459 A TW102121459 A TW 102121459A TW I562684 B TWI562684 B TW I562684B
- Authority
- TW
- Taiwan
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2242/00—Auxiliary systems
- H05H2242/20—Power circuits
- H05H2242/26—Matching networks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012137958A JP6001932B2 (ja) | 2012-06-19 | 2012-06-19 | プラズマ処理装置及びフィルタユニット |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201414361A TW201414361A (zh) | 2014-04-01 |
TWI562684B true TWI562684B (fr) | 2016-12-11 |
Family
ID=49768420
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102121459A TW201414361A (zh) | 2012-06-19 | 2013-06-18 | 電漿處理裝置及過濾器單元 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6001932B2 (fr) |
KR (1) | KR102070471B1 (fr) |
TW (1) | TW201414361A (fr) |
WO (1) | WO2013190805A1 (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3093185A4 (fr) | 2014-01-10 | 2017-01-25 | Nissan Motor Co., Ltd. | Dispositif de commande pour véhicule à propulsion électrique et procédé de commande pour véhicule à propulsion électrique |
JP6218650B2 (ja) * | 2014-03-11 | 2017-10-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP6483533B2 (ja) * | 2015-06-03 | 2019-03-13 | 京セラ株式会社 | 試料保持具およびこれを用いたプラズマエッチング装置 |
JP6637846B2 (ja) * | 2016-06-23 | 2020-01-29 | 東京エレクトロン株式会社 | フィルタを設計する方法 |
JP6698502B2 (ja) | 2016-11-21 | 2020-05-27 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
JP6832800B2 (ja) | 2017-06-21 | 2021-02-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US10812033B2 (en) * | 2017-12-29 | 2020-10-20 | Lam Research Corporation | High-power radio-frequency spiral-coil filter |
JP7094856B2 (ja) * | 2018-10-19 | 2022-07-04 | 東京エレクトロン株式会社 | フィルタユニットの調整方法およびプラズマ処理装置 |
JP7125058B2 (ja) * | 2018-12-06 | 2022-08-24 | 東京エレクトロン株式会社 | プラズマ処理装置、及び、プラズマ処理方法 |
TW202234461A (zh) * | 2020-05-01 | 2022-09-01 | 日商東京威力科創股份有限公司 | 蝕刻裝置及蝕刻方法 |
JP7516198B2 (ja) * | 2020-05-01 | 2024-07-16 | 東京エレクトロン株式会社 | エッチング装置及びエッチング方法 |
KR20220061617A (ko) | 2020-11-06 | 2022-05-13 | 세메스 주식회사 | 기판 처리 장치 |
JP7534235B2 (ja) | 2021-02-01 | 2024-08-14 | 東京エレクトロン株式会社 | フィルタ回路及びプラズマ処理装置 |
CN112992481A (zh) * | 2021-02-04 | 2021-06-18 | 广州市蓝粉网络科技有限公司 | 一种片式绕线共模电感器 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI278877B (en) * | 2003-09-17 | 2007-04-11 | Pulse Eng Inc | Controlled inductance device and method |
US20080236493A1 (en) * | 2007-03-27 | 2008-10-02 | Tokyo Electron Limited | Plasma processing apparatus |
TW201143553A (en) * | 2009-11-24 | 2011-12-01 | Tokyo Electron Ltd | Plasma processing apparatus |
TWI358198B (en) * | 2006-06-13 | 2012-02-11 | Applied Materials Inc | High ac current high rf power ac-rf decoupling fil |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6011418U (ja) * | 1983-07-05 | 1985-01-25 | パイオニア株式会社 | 可変インダクタンス装置 |
JPS62213216A (ja) * | 1986-03-14 | 1987-09-19 | Matsushita Electric Ind Co Ltd | 可変インダクタ− |
JP3843887B2 (ja) * | 2002-05-24 | 2006-11-08 | 松下電器産業株式会社 | 高周波解凍装置 |
JP5042661B2 (ja) * | 2007-02-15 | 2012-10-03 | 東京エレクトロン株式会社 | プラズマ処理装置及びフィルタユニット |
JP5301812B2 (ja) * | 2007-11-14 | 2013-09-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2010283273A (ja) * | 2009-06-08 | 2010-12-16 | Hitachi Kokusai Electric Inc | インダクタンス微調整装置 |
-
2012
- 2012-06-19 JP JP2012137958A patent/JP6001932B2/ja active Active
-
2013
- 2013-06-12 WO PCT/JP2013/003683 patent/WO2013190805A1/fr active Application Filing
- 2013-06-12 KR KR1020147029205A patent/KR102070471B1/ko active IP Right Grant
- 2013-06-18 TW TW102121459A patent/TW201414361A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI278877B (en) * | 2003-09-17 | 2007-04-11 | Pulse Eng Inc | Controlled inductance device and method |
TWI358198B (en) * | 2006-06-13 | 2012-02-11 | Applied Materials Inc | High ac current high rf power ac-rf decoupling fil |
US20080236493A1 (en) * | 2007-03-27 | 2008-10-02 | Tokyo Electron Limited | Plasma processing apparatus |
TW201143553A (en) * | 2009-11-24 | 2011-12-01 | Tokyo Electron Ltd | Plasma processing apparatus |
Also Published As
Publication number | Publication date |
---|---|
JP2014003179A (ja) | 2014-01-09 |
KR102070471B1 (ko) | 2020-01-29 |
WO2013190805A1 (fr) | 2013-12-27 |
JP6001932B2 (ja) | 2016-10-05 |
TW201414361A (zh) | 2014-04-01 |
KR20150024303A (ko) | 2015-03-06 |