TWI562684B - - Google Patents

Info

Publication number
TWI562684B
TWI562684B TW102121459A TW102121459A TWI562684B TW I562684 B TWI562684 B TW I562684B TW 102121459 A TW102121459 A TW 102121459A TW 102121459 A TW102121459 A TW 102121459A TW I562684 B TWI562684 B TW I562684B
Authority
TW
Taiwan
Application number
TW102121459A
Other languages
Chinese (zh)
Other versions
TW201414361A (zh
Inventor
Nozomu Nagashima
Naohiko Okunishi
Kaoru Oohashi
Daisuke Fujiyama
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201414361A publication Critical patent/TW201414361A/zh
Application granted granted Critical
Publication of TWI562684B publication Critical patent/TWI562684B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00Auxiliary systems
    • H05H2242/20Power circuits
    • H05H2242/26Matching networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW102121459A 2012-06-19 2013-06-18 電漿處理裝置及過濾器單元 TW201414361A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012137958A JP6001932B2 (ja) 2012-06-19 2012-06-19 プラズマ処理装置及びフィルタユニット

Publications (2)

Publication Number Publication Date
TW201414361A TW201414361A (zh) 2014-04-01
TWI562684B true TWI562684B (fr) 2016-12-11

Family

ID=49768420

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102121459A TW201414361A (zh) 2012-06-19 2013-06-18 電漿處理裝置及過濾器單元

Country Status (4)

Country Link
JP (1) JP6001932B2 (fr)
KR (1) KR102070471B1 (fr)
TW (1) TW201414361A (fr)
WO (1) WO2013190805A1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3093185A4 (fr) 2014-01-10 2017-01-25 Nissan Motor Co., Ltd. Dispositif de commande pour véhicule à propulsion électrique et procédé de commande pour véhicule à propulsion électrique
JP6218650B2 (ja) * 2014-03-11 2017-10-25 東京エレクトロン株式会社 プラズマ処理装置
JP6483533B2 (ja) * 2015-06-03 2019-03-13 京セラ株式会社 試料保持具およびこれを用いたプラズマエッチング装置
JP6637846B2 (ja) * 2016-06-23 2020-01-29 東京エレクトロン株式会社 フィルタを設計する方法
JP6698502B2 (ja) 2016-11-21 2020-05-27 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP6832800B2 (ja) 2017-06-21 2021-02-24 東京エレクトロン株式会社 プラズマ処理装置
US10812033B2 (en) * 2017-12-29 2020-10-20 Lam Research Corporation High-power radio-frequency spiral-coil filter
JP7094856B2 (ja) * 2018-10-19 2022-07-04 東京エレクトロン株式会社 フィルタユニットの調整方法およびプラズマ処理装置
JP7125058B2 (ja) * 2018-12-06 2022-08-24 東京エレクトロン株式会社 プラズマ処理装置、及び、プラズマ処理方法
TW202234461A (zh) * 2020-05-01 2022-09-01 日商東京威力科創股份有限公司 蝕刻裝置及蝕刻方法
JP7516198B2 (ja) * 2020-05-01 2024-07-16 東京エレクトロン株式会社 エッチング装置及びエッチング方法
KR20220061617A (ko) 2020-11-06 2022-05-13 세메스 주식회사 기판 처리 장치
JP7534235B2 (ja) 2021-02-01 2024-08-14 東京エレクトロン株式会社 フィルタ回路及びプラズマ処理装置
CN112992481A (zh) * 2021-02-04 2021-06-18 广州市蓝粉网络科技有限公司 一种片式绕线共模电感器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI278877B (en) * 2003-09-17 2007-04-11 Pulse Eng Inc Controlled inductance device and method
US20080236493A1 (en) * 2007-03-27 2008-10-02 Tokyo Electron Limited Plasma processing apparatus
TW201143553A (en) * 2009-11-24 2011-12-01 Tokyo Electron Ltd Plasma processing apparatus
TWI358198B (en) * 2006-06-13 2012-02-11 Applied Materials Inc High ac current high rf power ac-rf decoupling fil

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6011418U (ja) * 1983-07-05 1985-01-25 パイオニア株式会社 可変インダクタンス装置
JPS62213216A (ja) * 1986-03-14 1987-09-19 Matsushita Electric Ind Co Ltd 可変インダクタ−
JP3843887B2 (ja) * 2002-05-24 2006-11-08 松下電器産業株式会社 高周波解凍装置
JP5042661B2 (ja) * 2007-02-15 2012-10-03 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット
JP5301812B2 (ja) * 2007-11-14 2013-09-25 東京エレクトロン株式会社 プラズマ処理装置
JP2010283273A (ja) * 2009-06-08 2010-12-16 Hitachi Kokusai Electric Inc インダクタンス微調整装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI278877B (en) * 2003-09-17 2007-04-11 Pulse Eng Inc Controlled inductance device and method
TWI358198B (en) * 2006-06-13 2012-02-11 Applied Materials Inc High ac current high rf power ac-rf decoupling fil
US20080236493A1 (en) * 2007-03-27 2008-10-02 Tokyo Electron Limited Plasma processing apparatus
TW201143553A (en) * 2009-11-24 2011-12-01 Tokyo Electron Ltd Plasma processing apparatus

Also Published As

Publication number Publication date
JP2014003179A (ja) 2014-01-09
KR102070471B1 (ko) 2020-01-29
WO2013190805A1 (fr) 2013-12-27
JP6001932B2 (ja) 2016-10-05
TW201414361A (zh) 2014-04-01
KR20150024303A (ko) 2015-03-06

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