JP5991712B2 - 半導体素子搭載用基板及びその製造方法 - Google Patents
半導体素子搭載用基板及びその製造方法 Download PDFInfo
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- JP5991712B2 JP5991712B2 JP2012237086A JP2012237086A JP5991712B2 JP 5991712 B2 JP5991712 B2 JP 5991712B2 JP 2012237086 A JP2012237086 A JP 2012237086A JP 2012237086 A JP2012237086 A JP 2012237086A JP 5991712 B2 JP5991712 B2 JP 5991712B2
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- Prior art keywords
- plating layer
- semiconductor element
- metal plate
- terminal portion
- mounting substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 77
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 239000000758 substrate Substances 0.000 title claims description 33
- 238000007747 plating Methods 0.000 claims description 119
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 238000005530 etching Methods 0.000 claims description 27
- 239000000956 alloy Substances 0.000 claims description 22
- 229910045601 alloy Inorganic materials 0.000 claims description 21
- 238000000034 method Methods 0.000 description 13
- 238000007789 sealing Methods 0.000 description 11
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000000463 material Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Description
1a、11a 端子部
1b 搭載部
2、23 耐エッチング性を持つレジスト
21 ドライフィルムレジスト
22 耐めっき性を持つレジストマスク
24 耐エッチング性と耐めっき性を持つレジストマスク
3、31 めっき層
4、41 半導体素子
5、51 ボンディングワイヤ
6、61 封止樹脂
Claims (2)
- 金属板の一方の面の所定の領域に、金属板側から順に、NiP合金めっき層を形成し、Niめっき層を形成し、NiP合金めっき層を形成し、Pdめっき層を形成し、Auめっき層を形成することによって、めっき層を形成し、
前記めっき層の形成された領域以外の領域を前記一方の面側からハーフエッチングすることによって、半導体素子の電極とワイヤボンディングを行う端子部の一部を前記金属板対して垂直方向に突出するように形成し、
前記端子部の一部をサイドエッチングすることによって、前記めっき層を前記端子部から前記金属板に対して水平方向に突出させることを特徴とする半導体素子搭載用基板の製造方法。 - 所定の位置に載置した半導体素子の端子とワイヤボンディングを行う端子部の前記半導体素子側の端部に、前記端子部側から順に、NiP合金めっき層と、Niめっき層と、NiP合金めっき層と、Pdめっき層と、Auめっき層と、の5層からなるめっき層が形成されており、
前記めっき層は、前記端子部から前記金属板に対して水平方向に突出していることを特徴とする半導体素子搭載用基板。
Priority Applications (1)
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---|---|---|---|
JP2012237086A JP5991712B2 (ja) | 2012-10-26 | 2012-10-26 | 半導体素子搭載用基板及びその製造方法 |
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JP2012237086A JP5991712B2 (ja) | 2012-10-26 | 2012-10-26 | 半導体素子搭載用基板及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2014086685A JP2014086685A (ja) | 2014-05-12 |
JP5991712B2 true JP5991712B2 (ja) | 2016-09-14 |
Family
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JP2012237086A Active JP5991712B2 (ja) | 2012-10-26 | 2012-10-26 | 半導体素子搭載用基板及びその製造方法 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6610927B2 (ja) * | 2015-07-31 | 2019-11-27 | 大口マテリアル株式会社 | 光半導体装置及びその製造方法と、光半導体素子搭載用基板の製造方法 |
JP6608672B2 (ja) * | 2015-10-30 | 2019-11-20 | 新光電気工業株式会社 | 半導体装置及びその製造方法、リードフレーム及びその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6378560A (ja) * | 1986-09-20 | 1988-04-08 | Nec Kansai Ltd | リ−ドフレ−ム |
JP2000077593A (ja) * | 1998-08-27 | 2000-03-14 | Hitachi Cable Ltd | 半導体用リードフレーム |
US6335107B1 (en) * | 1999-09-23 | 2002-01-01 | Lucent Technologies Inc. | Metal article coated with multilayer surface finish for porosity reduction |
JP4421972B2 (ja) * | 2004-04-30 | 2010-02-24 | 日東電工株式会社 | 半導体装置の製法 |
JP2006049698A (ja) * | 2004-08-06 | 2006-02-16 | Denso Corp | 樹脂封止型半導体装置 |
JP2007048978A (ja) * | 2005-08-10 | 2007-02-22 | Mitsui High Tec Inc | 半導体装置及びその製造方法 |
JP2007258205A (ja) * | 2006-03-20 | 2007-10-04 | Denso Corp | 電子装置およびその製造方法 |
JP2009135417A (ja) * | 2007-11-07 | 2009-06-18 | Sumitomo Metal Mining Co Ltd | 半導体素子搭載用基板の製造方法 |
JP2011108941A (ja) * | 2009-11-19 | 2011-06-02 | Mitsui High Tec Inc | リードフレームおよびその製造方法、ならびにそのリードフレームを用いた半導体装置の製造方法 |
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