JPS6378560A - リ−ドフレ−ム - Google Patents

リ−ドフレ−ム

Info

Publication number
JPS6378560A
JPS6378560A JP61222691A JP22269186A JPS6378560A JP S6378560 A JPS6378560 A JP S6378560A JP 61222691 A JP61222691 A JP 61222691A JP 22269186 A JP22269186 A JP 22269186A JP S6378560 A JPS6378560 A JP S6378560A
Authority
JP
Japan
Prior art keywords
lead frame
nickel
plating layer
wire
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61222691A
Other languages
English (en)
Inventor
Saburo Kimura
三郎 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP61222691A priority Critical patent/JPS6378560A/ja
Publication of JPS6378560A publication Critical patent/JPS6378560A/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/4805—Shape
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    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48855—Nickel (Ni) as principal constituent
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    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
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    • H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/8212—Aligning
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    • H01L2224/82169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, e.g. nozzle
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    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/85455—Nickel (Ni) as principal constituent
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    • H01L2924/15747—Copper [Cu] as principal constituent

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 主業上皇且里立■ 本発明はリードフレーム、特に銅ワイヤがボンディング
される銅素地のリードフレームに関する。
従ｍ支避 半導体ペレットとリードフレームとを接続するワイヤと
してＡｕ線やＡｇ線が一般的に用いられていたが半導体
装置の製造コストの低減を図るため、これら金属線の代
りに銅細線の使用が検討されつつある。咳銅ワイヤで半
導体ペレットとリードフレームの間を接続するにはまず
第２図Ｃポジションで、ワイヤボンダのキャピラリ（４
）に挿通された銅ワイヤ（１）の下端に放電等の適当な
手段によりボール（１ａ）を形成しキャピラリ　（４）
を降下させて銅ワイヤ（１）を繰り出し半導体ペレット
（２）上の電極表面に銅ワイヤ（１）をボールボンディ
ングする。
次いで第２図Ｃポジション、即ちリードフレーム（３）
のリード上にキャピラリを移動させ、銅ワイヤ（１）の
中間部をリードフレーム（３）表面のボンディング域（
３ａ）に接続する。この後キャピラリ　（４）をリード
フレーム（３）のボンディング域（３ａ）から上昇させ
、キャピラリ　（４）から露出した銅ワイヤ（１）を切
離し、ワイヤをクランプした状態でキャピラリ（４）を
第２図Ｃポジションに上昇させ、ワイヤ下端にボールを
形成する。このボンディング動作を所定回数だけ繰返す
ことによって、半導体ペレット（２）とリードフレーム
（３）との接続作業が完了する。
呪　゛　しよ゛と　る　　占 上記ボール（１ａ）の形成は、銅ワイヤの酸化を防止す
るため、不活性ガスや還元性ガス雰囲気中で行なうよう
にしている。
一方、熱伝導性、電気伝導性の良好な銅を用いたリード
フレーム（３）は、ペレットマウント時に加熱されるな
どしてその表面に酸化被膜が形成されている場合が多く
、このままの状態では銅ワイヤ（１）と該リードフレー
ム（３）との間の接続強度が低く、信頼性の点から問題
であった。このため、ボンディング域（３ａ）表面にＡ
ｕメッキ層やＡｇメッキ層を形成する等して酸化防止し
ている。しかしながら、リードフレーム（３）に部分メ
ッキすると、メッキ材料費だけでなく、工数も増加し、
Ａｕワイヤの代りに銅ワイヤ（１）を使用することによ
ってもたらされるコストダウン額を上廻ってしまうとい
う結果を招来する。また、別法としてリードフレーム（
３）の表面に還元性ガス、例えば高温に加熱された水素
ガスを吹付けて酸化膜を除去することも検討されている
が、リードフレーム（３）が高温に曝されるため、比較
的短時間で酸化被膜が再生成されてしまうという問題が
あった。
本発明の主要な目的は、銅素地のリードフレームに銅ワ
イヤをボンディングする際に回避することのできなかっ
た上記問題点の解決手段を提供することにある。
”るための 上記問題点の解決手段として本発明は、ワイヤがボンデ
ィングされる銅素地のリードフレームにおいて、少くと
も銅ワイヤがボンディングされる部分にニッケルメッキ
層を形成し、該ニッケルメッキ層上に耐酸化性三ツケル
メッキ層を積石したことを特徴とするリードフレームを
提供するものである。
在且 銅素地のリードフレームのワイヤボンディング域にニッ
ケルメッキ層とニッケルーリンメッキ層等の耐酸化性ニ
ッケルメッキ層を積層配置するだけでワイヤボンディン
グ域の酸化が抑圧される。
ス上皿 第１図は本発明に係るリードフレームの略示拡大断面図
である。尚、以下の記述に於いて上記在来のリードフレ
ームあるいはワイヤボンダと同一の構成部材は同一の参
照番号で表示し、重複する事項に関する説明を省略する
０図示するように銅ワイヤ（１）の末端部分（１ｂ）が
ボンディングされる銅素地のリードフレーム（３）の表
面に、ボンディング域（３ａ）の全域に亘ってニッケル
メッキ層（１０）を形成し、該ニッケルメッキ層の上面
にニッケルーリンメッキ層（１１）を積層配置する０本
実施例に於いては、電解メッキによってリードフレーム
（３）の表面に厚さ１〜１．５μ請のニッケルメッキ層
（１０）を形成し、その上面に電解メッキ等によって厚
さ０．０５μ屓以下のニッケルーリンメッキ層等の耐酸
化性ニッケルーメッキ層（１１）を積層配置している。
Ｉ！ｐち、酸化し易いニッケルメッキ層（１０）をニッ
ケルーリンメッキ層等の＠酸化性ニッケルメッキ層（１
１）で被覆することによって、該ニッケルーリンメッキ
層等の耐酸化ニッケルメッキ層の第１の構成成分たるリ
ン等の不純物がその下側に配設されたニッケルメッキ層
（１０）に対して酸化防止成分として機能し、ボンディ
ング強度の向上に寄与する。本発明の実施に際し、ニッ
ケルーリンメッキ層等の耐酸化ニッケルメッキＮ　（１
１）の第２の構成成分たるニッケルに前記リンの含有に
起因する硬度の上昇とボンディング強度の低下が引き起
こされないようにするため、該ニッケルーリンメッキ層
等の耐酸化ニッケルメッキ層（１１）の厚みは前記ニッ
ケルメッキ層（１０）の厚みよりも薄くすることが望ま
しい。斯かるニッケルメッキ層（１０）とニッケルーリ
ンメッキ層等の耐酸化ニッケルーメッキ層（１１）の積
層配置によって酸化防止機能とボンディング性が改善さ
れ、ニッケルメッキＮ　（１０）を介して銅ワイヤ（１
）が銅素地のリードフレーム（３）上に強固にボンディ
ングされる。
逸」■裏が果 以上の説明から理解されるように、本発明によればリー
ドフレームと銅ワイヤの接合強度がＡｕワイヤを使用し
たのと同等の水準に維持され、半導体装置の製造コスト
の低減に対して注目すべき効果が発１車される。更に半
導体ペレットを固着したリードフレームに後続工程で樹
脂モールドを施こす際に、リードフレームの構成素材た
る銅とその表面に被着形成されたメッキ層との間に熱膨
張率の差に起因する界面剥離が発生しにくいため、半導
体装置の品質向上に対しても有益な改善効果がもたらさ
れる。
【図面の簡単な説明】
第１図は本発明に係るリードフレームの略示拡大断面図
であり、第２図Ａ乃至Ｃはワイヤボンディング要領の説
明図である。 （１）・−銅ワイヤ、（３”）　−・リードフレーム、
（１０）　−ニッケルメッキ層、 （１１）・−・ニッケルーリンメッキ層等の耐酸化性ニ
ッケルメッキ層。

Claims (1)

    【特許請求の範囲】
  1. （１）ワイヤがボンディングされる銅素地のリードフレ
    ームにおいて、少くとも銅ワイヤがボンディングされる
    部分にニッケルメッキ層を形成し、該ニッケルメッキ層
    上に耐酸化性ニッケルメッキ層を積層したことを特徴と
    するリードフレーム。
JP61222691A 1986-09-20 1986-09-20 リ−ドフレ−ム Pending JPS6378560A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61222691A JPS6378560A (ja) 1986-09-20 1986-09-20 リ−ドフレ−ム

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61222691A JPS6378560A (ja) 1986-09-20 1986-09-20 リ−ドフレ−ム

Publications (1)

Publication Number Publication Date
JPS6378560A true JPS6378560A (ja) 1988-04-08

Family

ID=16786402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61222691A Pending JPS6378560A (ja) 1986-09-20 1986-09-20 リ−ドフレ−ム

Country Status (1)

Country Link
JP (1) JPS6378560A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014086686A (ja) * 2012-10-26 2014-05-12 Sumitomo Metal Mining Co Ltd 半導体素子搭載用基板
JP2014086685A (ja) * 2012-10-26 2014-05-12 Sumitomo Metal Mining Co Ltd 半導体素子搭載用基板及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014086686A (ja) * 2012-10-26 2014-05-12 Sumitomo Metal Mining Co Ltd 半導体素子搭載用基板
JP2014086685A (ja) * 2012-10-26 2014-05-12 Sumitomo Metal Mining Co Ltd 半導体素子搭載用基板及びその製造方法

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