JP5987933B2 - 機能性素子の製造方法および機能性素子 - Google Patents

機能性素子の製造方法および機能性素子 Download PDF

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Publication number
JP5987933B2
JP5987933B2 JP2015028050A JP2015028050A JP5987933B2 JP 5987933 B2 JP5987933 B2 JP 5987933B2 JP 2015028050 A JP2015028050 A JP 2015028050A JP 2015028050 A JP2015028050 A JP 2015028050A JP 5987933 B2 JP5987933 B2 JP 5987933B2
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Japan
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wide area
region
functional layer
area region
substrate
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Expired - Fee Related
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JP2015028050A
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English (en)
Japanese (ja)
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JP2015171710A (ja
JP2015171710A5 (https=
Inventor
周介 金澤
周介 金澤
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Dai Nippon Printing Co Ltd
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Dai Nippon Printing Co Ltd
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Priority to JP2015028050A priority Critical patent/JP5987933B2/ja
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Publication of JP2015171710A5 publication Critical patent/JP2015171710A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Electroluminescent Light Sources (AREA)
  • Structure Of Printed Boards (AREA)
  • Thin Film Transistor (AREA)
JP2015028050A 2014-02-20 2015-02-16 機能性素子の製造方法および機能性素子 Expired - Fee Related JP5987933B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015028050A JP5987933B2 (ja) 2014-02-20 2015-02-16 機能性素子の製造方法および機能性素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014030342 2014-02-20
JP2014030342 2014-02-20
JP2015028050A JP5987933B2 (ja) 2014-02-20 2015-02-16 機能性素子の製造方法および機能性素子

Publications (3)

Publication Number Publication Date
JP2015171710A JP2015171710A (ja) 2015-10-01
JP2015171710A5 JP2015171710A5 (https=) 2015-11-12
JP5987933B2 true JP5987933B2 (ja) 2016-09-07

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ID=53878249

Family Applications (1)

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JP2015028050A Expired - Fee Related JP5987933B2 (ja) 2014-02-20 2015-02-16 機能性素子の製造方法および機能性素子

Country Status (3)

Country Link
JP (1) JP5987933B2 (https=)
TW (1) TW201539488A (https=)
WO (1) WO2015125746A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7784271B2 (ja) 2021-11-29 2025-12-11 富士フイルム株式会社 タッチパネル用導電部材およびタッチパネル

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6267044B2 (ja) * 2014-04-09 2018-01-24 株式会社フジクラ タッチセンサ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3130726B2 (ja) * 1993-12-10 2001-01-31 日本電気株式会社 半導体装置及びその製造方法
JPH08288603A (ja) * 1995-04-11 1996-11-01 Dainippon Printing Co Ltd プリント配線板とその製造方法および転写用原版
JP4330492B2 (ja) * 2004-06-09 2009-09-16 シャープ株式会社 配線基板及びその製造方法
JP4598663B2 (ja) * 2005-03-18 2010-12-15 株式会社フューチャービジョン 表示装置とその製造方法
JP2011216647A (ja) * 2010-03-31 2011-10-27 Dainippon Printing Co Ltd パターン形成体の製造方法、機能性素子の製造方法および半導体素子の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7784271B2 (ja) 2021-11-29 2025-12-11 富士フイルム株式会社 タッチパネル用導電部材およびタッチパネル

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JP2015171710A (ja) 2015-10-01
TW201539488A (zh) 2015-10-16
WO2015125746A1 (ja) 2015-08-27

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