JP5984885B2 - 光検出器 - Google Patents
光検出器 Download PDFInfo
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- JP5984885B2 JP5984885B2 JP2014167511A JP2014167511A JP5984885B2 JP 5984885 B2 JP5984885 B2 JP 5984885B2 JP 2014167511 A JP2014167511 A JP 2014167511A JP 2014167511 A JP2014167511 A JP 2014167511A JP 5984885 B2 JP5984885 B2 JP 5984885B2
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- 239000002184 metal Substances 0.000 claims description 89
- 229910052751 metal Inorganic materials 0.000 claims description 89
- 230000004888 barrier function Effects 0.000 claims description 79
- 239000004065 semiconductor Substances 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 32
- 238000001228 spectrum Methods 0.000 claims description 21
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000012141 concentrate Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 2
- 230000008569 process Effects 0.000 description 16
- 150000001875 compounds Chemical class 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 239000012535 impurity Substances 0.000 description 10
- 239000000969 carrier Substances 0.000 description 8
- 238000001514 detection method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005681 electric displacement field Effects 0.000 description 1
- 230000005274 electronic transitions Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
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Description
上の表1に示されているように、II−VI族半導体は、約1.5eVから約5.0eVまでの範囲のバンドギャップエネルギーを有する。例えば、井戸層134は、所定のスペクトルに対応するバンドギャップエネルギーを有するように、その成分が表1にリストされているII−VI族半導体のうちから選択される半導体化合物を含むことができる。六方晶構造を持つII−VI族半導体を含む化合物は、強い結合エネルギーを有することができ、これは量子効率を改善するうえで有利である。さらに、六方晶系II−VI族半導体は、立方晶系II−VI族半導体に比べて、高励起準位の下で、ダークスポットの形成に対して耐性があることが知られている。これは、六方晶構造は対称性の低い構造であり、デバイス内の欠陥の伝搬を抑制するからである。例えば、デバイス内で縮退故障が発生すると仮定する。デバイスが対称的な構造を有する場合、縮退故障は、対称構造内を容易に伝搬しうる。しかし、縮退故障は、伝搬せず、六方晶構造または他の非対称構造内のある点で停止しうる。障壁層132、136は、電子または正孔などのキャリアが井戸層134内に閉じ込められるようなエネルギーバンドを有するように構成されうる。一実施形態では、障壁層132、136は、井戸層134内に電子を閉じ込めるために井戸層134の伝導帯より高い伝導帯を有することができる。一実施形態では、障壁層132、136は、井戸層134内に正孔を閉じ込めるために井戸層134の価電子帯より低い価電子帯を有することができる。
[式1]
Eg=3.723−1.241xeV
式1によれば、x=0.7の場合、CdxZn1−xSのバンドギャップエネルギーEgは、2.853eVであり、これは435nmの波長(例えば、青色スペクトル)に対応する。井戸層134内に見られるCdxZn1−xSのXは、青色スペクトル検出のためには、約0.5から1までの範囲とすることができる。一実施形態では、障壁層132、136は、井戸層134がCdZnSを含む場合、ZnS、MgZnS、およびCdMgZnSのうちの1つを含むものとしてもよい。
[式2]
Claims (26)
- 第1の障壁層、前記第1の障壁層上に配置された井戸層、及び前記井戸層上に配置された第2の障壁層を備える量子構造と、
前記量子構造の前記第1の障壁層、前記井戸層、及び前記第2の障壁層に直接接して隣接して配置される金属層と、を備え、
前記金属層の前記量子構造に対する誘電率の比は1より大きく、
前記金属層と前記量子構造との間の誘電率の相違により、前記量子構造に分布する電場又は光場の量は、前記金属層に分布する電場又は光場の量より多い、光検出器。 - 前記量子構造は、II−VI族半導体を含む、請求項1に記載の光検出器。
- 前記II−VI族半導体は、六方晶構造である、請求項2に記載の光検出器。
- 前記井戸層は、xを約0.5から約1までの範囲とするCdxZn1−xSを含む、請求項1に記載の光検出器。
- 前記第1の障壁層及び前記第2の障壁層は、本質的にZnS、MgZnS、MgCdZnS、ZnO、MgZnO、及びMgCdZnOからなる群から選択された半導体を含む、請求項1に記載の光検出器。
- 前記量子構造は、約100nm未満の幅を有し、前記金属層は、約100nm未満の幅を有する、請求項1に記載の光検出器。
- 前記金属層は、本質的にAg、Al、Au、Ni、及びTiからなる群から選択された金属材料を含む、請求項1に記載の光検出器。
- 前記第1の障壁層の下に配置された第1のドープ層と、
前記第2の障壁層上に配置された第2のドープ層と、
を更に備え、
前記金属層は、前記第1のドープ層上に、かつ前記第2のドープ層に隣接して配置される、請求項1に記載の光検出器。 - 前記第1のドープ層の下に配置された基材を更に備える、請求項8に記載の光検出器。
- 前記基材は、GaAsを含む、請求項9に記載の光検出器。
- 前記金属層は、前記量子構造の両側部に沿って隣接する、請求項1に記載の光検出器。
- 前記井戸層は、サブバンド上に電子を有し、前記サブバンド間の1つまたは複数の遷移は、青色スペクトルを持つ光子に対応する、請求項1に記載の光検出器。
- 第1の障壁層、前記第1の障壁層上に配置された井戸層、及び前記井戸層上に配置された第2の障壁層を備える量子構造と、
前記量子構造内の電場及び光場を集中するように構成された表面プラズモン導波路を備える金属層と、を備え、
前記金属層は、前記第1の障壁層、前記井戸層、及び前記第2の障壁層に直接接して隣接して配置され、
前記金属層の前記量子構造に対する誘電率の比は1より大きく、
前記金属層と前記量子構造との間の誘電率の相違により、前記量子構造に分布する電場又は光場の量は、前記金属層に分布する電場又は光場の量より多い、光検出器。 - 前記量子構造上に配置されたドープ層を更に備え、
前記金属層は、前記量子構造上の前記ドープ層上に形成される、請求項13に記載の光検出器。 - 前記第1の障壁層の下に配置された第1のドープ層と、
前記第2の障壁層上に配置された第2のドープ層と、
を更に備え、
前記金属層は、前記第1のドープ層上に、かつ前記第2のドープ層に隣接して配置される、請求項13に記載の光検出器。 - 前記量子構造は、II−VI族半導体を含む、請求項13に記載の光検出器。
- 前記II−VI族半導体は、六方晶構造である、請求項16に記載の光検出器。
- 前記第1の障壁層及び前記第2の障壁層は、本質的にZnS、MgZnS、MgCdZnS、ZnO、MgZnO、及びMgCdZnOからなる群から選択された半導体を含む、請求項13に記載の光検出器。
- 第1の障壁層、前記第1の障壁層上に配置された井戸層、及び前記井戸層上に配置された第2の障壁層を備える量子構造と、
前記量子構造の前記第1の障壁層、前記井戸層、及び前記第2の障壁層の両側部に直接接して隣接して配置される金属層と、
前記第1の障壁層の下に配置される第1のドープ層と、
前記第2の障壁層上に配置された第2のドープ層であって、前記金属層が前記第1のドープ層上に、かつ前記第2のドープ層に隣接して配置される、第2のドープ層と、
前記第1のドープ層の下に配置された基材と、を備え、
前記金属層の前記量子構造に対する誘電率の比は1より大きく、
前記金属層と前記量子構造との間の誘電率の相違により、前記量子構造に分布する電場又は光場の量は、前記金属層に分布する電場又は光場の量より多い、光検出器。 - 前記第1の障壁層及び前記第2の障壁層は、本質的にZnS、MgZnS、MgCdZnS、ZnO、MgZnO、及びMgCdZnOからなる群から選択された半導体を含む、請求項19に記載の光検出器。
- 第1の障壁層を形成すること、
前記第1の障壁層上に井戸層を形成すること、及び
前記井戸層上に第2の障壁層を形成すること
によって量子構造を形成すること、
前記量子構造が所定の幅を有するようになるまで前記量子構造の一部を取り除くこと、及び
前記量子構造の前記第1の障壁層、前記井戸層、及び前記第2の障壁層に直接接して隣接する金属層を形成することを含み、
前記金属層の前記量子構造に対する誘電率の比は1より大きく、
前記金属層と前記量子構造との間の誘電率の相違により、前記量子構造に分布する電場又は光場の量は、前記金属層に分布する電場又は光場の量より多い、光検出器を製造する方法。 - 第1のドープ層を形成することであって、第1の障壁層を形成することは、前記第1のドープ層上に第1の障壁層を形成することを含む、ことと、
前記第2の障壁層上に第2のドープ層を形成することと、を備え、
前記量子構造の一部を取り除くことは、前記第2のドープ層が前記量子構造と同じ幅を有するように前記第2のドープ層に対応する前記量子構造の一部を取り除くことを更に含み、
金属層を形成することは、金属層を前記第1のドープ層上に、かつ、前記量子構造及び前記第2のドープ層に隣接するように形成することを更に含む、請求項21に記載の方法。 - 基材を用意することを更に含み、
前記第1のドープ層を形成することは、前記第1のドープ層を前記基材上に形成することを含む、請求項22に記載の方法。 - 前記金属層を形成することは、前記量子構造の両側部に沿って隣接する金属層を形成すること含む、請求項21に記載の方法。
- 前記井戸層は、サブバンド上に電子を有し、前記サブバンド間の1つまたは複数の遷移は、青色スペクトルを持つ光子に対応する、請求項21に記載の方法。
- 前記金属層は、前記量子構造の幅より小さい幅を有する、請求項21に記載の方法。
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