JP5982223B2 - プラズマ処理方法、及びプラズマ処理装置 - Google Patents

プラズマ処理方法、及びプラズマ処理装置 Download PDF

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Publication number
JP5982223B2
JP5982223B2 JP2012186344A JP2012186344A JP5982223B2 JP 5982223 B2 JP5982223 B2 JP 5982223B2 JP 2012186344 A JP2012186344 A JP 2012186344A JP 2012186344 A JP2012186344 A JP 2012186344A JP 5982223 B2 JP5982223 B2 JP 5982223B2
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Japan
Prior art keywords
gas
plasma processing
plasma
fluorine
titanium
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JP2012186344A
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English (en)
Japanese (ja)
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JP2014045063A5 (https=
JP2014045063A (ja
Inventor
彰俊 原田
彰俊 原田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2012186344A priority Critical patent/JP5982223B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN201380039947.7A priority patent/CN104508803B/zh
Priority to EP13833486.7A priority patent/EP2879166B1/en
Priority to PCT/JP2013/071409 priority patent/WO2014034396A1/ja
Priority to US14/424,217 priority patent/US9460896B2/en
Priority to KR1020157005120A priority patent/KR102114922B1/ko
Priority to TW102130274A priority patent/TWI571930B/zh
Publication of JP2014045063A publication Critical patent/JP2014045063A/ja
Publication of JP2014045063A5 publication Critical patent/JP2014045063A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2012186344A 2012-08-27 2012-08-27 プラズマ処理方法、及びプラズマ処理装置 Active JP5982223B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2012186344A JP5982223B2 (ja) 2012-08-27 2012-08-27 プラズマ処理方法、及びプラズマ処理装置
EP13833486.7A EP2879166B1 (en) 2012-08-27 2013-08-07 Plasma processing method
PCT/JP2013/071409 WO2014034396A1 (ja) 2012-08-27 2013-08-07 プラズマ処理方法、及びプラズマ処理装置
US14/424,217 US9460896B2 (en) 2012-08-27 2013-08-07 Plasma processing method and plasma processing apparatus
CN201380039947.7A CN104508803B (zh) 2012-08-27 2013-08-07 等离子体处理方法
KR1020157005120A KR102114922B1 (ko) 2012-08-27 2013-08-07 플라즈마 처리 방법
TW102130274A TWI571930B (zh) 2012-08-27 2013-08-23 電漿處理方法及電漿處理裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012186344A JP5982223B2 (ja) 2012-08-27 2012-08-27 プラズマ処理方法、及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2014045063A JP2014045063A (ja) 2014-03-13
JP2014045063A5 JP2014045063A5 (https=) 2015-07-09
JP5982223B2 true JP5982223B2 (ja) 2016-08-31

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JP2012186344A Active JP5982223B2 (ja) 2012-08-27 2012-08-27 プラズマ処理方法、及びプラズマ処理装置

Country Status (7)

Country Link
US (1) US9460896B2 (https=)
EP (1) EP2879166B1 (https=)
JP (1) JP5982223B2 (https=)
KR (1) KR102114922B1 (https=)
CN (1) CN104508803B (https=)
TW (1) TWI571930B (https=)
WO (1) WO2014034396A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6049527B2 (ja) * 2013-04-05 2016-12-21 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2017045849A (ja) * 2015-08-26 2017-03-02 東京エレクトロン株式会社 シーズニング方法およびエッチング方法
WO2017123423A1 (en) * 2016-01-13 2017-07-20 Applied Materials, Inc. Hydrogen plasma based cleaning process for etch hardware
CN107369603A (zh) * 2016-05-12 2017-11-21 中芯国际集成电路制造(上海)有限公司 去除含氧副产物、清洗刻蚀腔和形成半导体结构的方法
JP6785101B2 (ja) * 2016-09-09 2020-11-18 東京エレクトロン株式会社 プラズマエッチング方法
JP6763750B2 (ja) * 2016-11-07 2020-09-30 東京エレクトロン株式会社 被処理体を処理する方法
US10886468B2 (en) * 2017-04-14 2021-01-05 Sakai Display Products Corporation Manufacturing method and manufacturing apparatus for organic EL display device
WO2018233825A1 (en) * 2017-06-21 2018-12-27 Hp Indigo B.V. VACUUM TABLES
CN109962001A (zh) * 2017-12-26 2019-07-02 中微半导体设备(上海)股份有限公司 一种等离子体腔室的运行方法和等离子反应器
CN118541782A (zh) * 2022-01-13 2024-08-23 朗姆研究公司 高选择比和均匀介电蚀刻

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03239323A (ja) * 1990-02-16 1991-10-24 Yamaha Corp ドライエッチング方法
JP3117187B2 (ja) * 1995-12-20 2000-12-11 株式会社日立製作所 プラズマクリーニング処理方法
US5948702A (en) * 1996-12-19 1999-09-07 Texas Instruments Incorporated Selective removal of TixNy
JPH10280151A (ja) * 1997-04-08 1998-10-20 Fujitsu Ltd Ｃｖｄ装置のクリーニング方法
US6692903B2 (en) * 2000-12-13 2004-02-17 Applied Materials, Inc Substrate cleaning apparatus and method
JP4176365B2 (ja) * 2002-03-25 2008-11-05 東京エレクトロン株式会社 プラズマエッチング方法
US20060016783A1 (en) * 2004-07-22 2006-01-26 Dingjun Wu Process for titanium nitride removal
US7488689B2 (en) 2004-12-07 2009-02-10 Tokyo Electron Limited Plasma etching method
JP2006165246A (ja) * 2004-12-07 2006-06-22 Tokyo Electron Ltd プラズマエッチング方法
JP5047504B2 (ja) 2005-02-05 2012-10-10 三星電子株式会社 ビアキャッピング保護膜を使用する半導体素子のデュアルダマシン配線の製造方法
JP4764028B2 (ja) * 2005-02-28 2011-08-31 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP4288252B2 (ja) * 2005-04-19 2009-07-01 パナソニック株式会社 半導体チップの製造方法
JP2008198659A (ja) * 2007-02-08 2008-08-28 Tokyo Electron Ltd プラズマエッチング方法
JP5705495B2 (ja) * 2010-10-07 2015-04-22 株式会社日立ハイテクノロジーズ プラズマの処理方法及びプラズマ処理装置
US20120094499A1 (en) * 2010-10-15 2012-04-19 Siu Tang Ng Method of performing an in situ chamber clean
JP6177601B2 (ja) * 2013-06-25 2017-08-09 東京エレクトロン株式会社 クリーニング方法及び基板処理装置

Also Published As

Publication number Publication date
EP2879166B1 (en) 2019-10-09
TW201413817A (zh) 2014-04-01
KR102114922B1 (ko) 2020-05-25
EP2879166A1 (en) 2015-06-03
US20150228458A1 (en) 2015-08-13
JP2014045063A (ja) 2014-03-13
KR20150048134A (ko) 2015-05-06
TWI571930B (zh) 2017-02-21
CN104508803B (zh) 2016-12-07
US9460896B2 (en) 2016-10-04
WO2014034396A1 (ja) 2014-03-06
EP2879166A4 (en) 2016-03-16
CN104508803A (zh) 2015-04-08

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