CN104508803B - 等离子体处理方法 - Google Patents

等离子体处理方法 Download PDF

Info

Publication number
CN104508803B
CN104508803B CN201380039947.7A CN201380039947A CN104508803B CN 104508803 B CN104508803 B CN 104508803B CN 201380039947 A CN201380039947 A CN 201380039947A CN 104508803 B CN104508803 B CN 104508803B
Authority
CN
China
Prior art keywords
gas
plasma processing
plasma
processing space
fluoro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201380039947.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN104508803A (zh
Inventor
原田彰俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN104508803A publication Critical patent/CN104508803A/zh
Application granted granted Critical
Publication of CN104508803B publication Critical patent/CN104508803B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN201380039947.7A 2012-08-27 2013-08-07 等离子体处理方法 Active CN104508803B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2012186344A JP5982223B2 (ja) 2012-08-27 2012-08-27 プラズマ処理方法、及びプラズマ処理装置
JP2012-186344 2012-08-27
US201261695630P 2012-08-31 2012-08-31
US61/695,630 2012-08-31
PCT/JP2013/071409 WO2014034396A1 (ja) 2012-08-27 2013-08-07 プラズマ処理方法、及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
CN104508803A CN104508803A (zh) 2015-04-08
CN104508803B true CN104508803B (zh) 2016-12-07

Family

ID=50183214

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380039947.7A Active CN104508803B (zh) 2012-08-27 2013-08-07 等离子体处理方法

Country Status (7)

Country Link
US (1) US9460896B2 (https=)
EP (1) EP2879166B1 (https=)
JP (1) JP5982223B2 (https=)
KR (1) KR102114922B1 (https=)
CN (1) CN104508803B (https=)
TW (1) TWI571930B (https=)
WO (1) WO2014034396A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6049527B2 (ja) * 2013-04-05 2016-12-21 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2017045849A (ja) * 2015-08-26 2017-03-02 東京エレクトロン株式会社 シーズニング方法およびエッチング方法
WO2017123423A1 (en) * 2016-01-13 2017-07-20 Applied Materials, Inc. Hydrogen plasma based cleaning process for etch hardware
CN107369603A (zh) * 2016-05-12 2017-11-21 中芯国际集成电路制造(上海)有限公司 去除含氧副产物、清洗刻蚀腔和形成半导体结构的方法
JP6785101B2 (ja) * 2016-09-09 2020-11-18 東京エレクトロン株式会社 プラズマエッチング方法
JP6763750B2 (ja) * 2016-11-07 2020-09-30 東京エレクトロン株式会社 被処理体を処理する方法
US10886468B2 (en) * 2017-04-14 2021-01-05 Sakai Display Products Corporation Manufacturing method and manufacturing apparatus for organic EL display device
WO2018233825A1 (en) * 2017-06-21 2018-12-27 Hp Indigo B.V. VACUUM TABLES
CN109962001A (zh) * 2017-12-26 2019-07-02 中微半导体设备(上海)股份有限公司 一种等离子体腔室的运行方法和等离子反应器
CN118541782A (zh) * 2022-01-13 2024-08-23 朗姆研究公司 高选择比和均匀介电蚀刻

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1725442A (zh) * 2004-07-22 2006-01-25 气体产品与化学公司 氮化钛去除方法
US20060118520A1 (en) * 2004-12-07 2006-06-08 Tokyo Electron Limited Plasma etching method
CN1787183A (zh) * 2004-12-07 2006-06-14 东京毅力科创株式会社 等离子体蚀刻方法
US20080194114A1 (en) * 2007-02-08 2008-08-14 Tokyo Electron Limited Plasma etching method

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03239323A (ja) * 1990-02-16 1991-10-24 Yamaha Corp ドライエッチング方法
JP3117187B2 (ja) * 1995-12-20 2000-12-11 株式会社日立製作所 プラズマクリーニング処理方法
US5948702A (en) * 1996-12-19 1999-09-07 Texas Instruments Incorporated Selective removal of TixNy
JPH10280151A (ja) * 1997-04-08 1998-10-20 Fujitsu Ltd Ｃｖｄ装置のクリーニング方法
US6692903B2 (en) * 2000-12-13 2004-02-17 Applied Materials, Inc Substrate cleaning apparatus and method
JP4176365B2 (ja) * 2002-03-25 2008-11-05 東京エレクトロン株式会社 プラズマエッチング方法
JP5047504B2 (ja) 2005-02-05 2012-10-10 三星電子株式会社 ビアキャッピング保護膜を使用する半導体素子のデュアルダマシン配線の製造方法
JP4764028B2 (ja) * 2005-02-28 2011-08-31 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP4288252B2 (ja) * 2005-04-19 2009-07-01 パナソニック株式会社 半導体チップの製造方法
JP5705495B2 (ja) * 2010-10-07 2015-04-22 株式会社日立ハイテクノロジーズ プラズマの処理方法及びプラズマ処理装置
US20120094499A1 (en) * 2010-10-15 2012-04-19 Siu Tang Ng Method of performing an in situ chamber clean
JP6177601B2 (ja) * 2013-06-25 2017-08-09 東京エレクトロン株式会社 クリーニング方法及び基板処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1725442A (zh) * 2004-07-22 2006-01-25 气体产品与化学公司 氮化钛去除方法
US20060118520A1 (en) * 2004-12-07 2006-06-08 Tokyo Electron Limited Plasma etching method
CN1787183A (zh) * 2004-12-07 2006-06-14 东京毅力科创株式会社 等离子体蚀刻方法
US20080194114A1 (en) * 2007-02-08 2008-08-14 Tokyo Electron Limited Plasma etching method

Also Published As

Publication number Publication date
EP2879166B1 (en) 2019-10-09
TW201413817A (zh) 2014-04-01
KR102114922B1 (ko) 2020-05-25
EP2879166A1 (en) 2015-06-03
US20150228458A1 (en) 2015-08-13
JP2014045063A (ja) 2014-03-13
JP5982223B2 (ja) 2016-08-31
KR20150048134A (ko) 2015-05-06
TWI571930B (zh) 2017-02-21
US9460896B2 (en) 2016-10-04
WO2014034396A1 (ja) 2014-03-06
EP2879166A4 (en) 2016-03-16
CN104508803A (zh) 2015-04-08

Similar Documents

Publication Publication Date Title
CN104508803B (zh) 等离子体处理方法
CN110622282B (zh) 在基板和腔室部件上沉积金属硅化物层
CN102117733B (zh) 基板处理装置及其清洁方法
KR102340222B1 (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
US9818582B2 (en) Plasma processing method
US9147556B2 (en) Plasma processing method and plasma processing apparatus
US10553409B2 (en) Method of cleaning plasma processing apparatus
CN109219866B (zh) 蚀刻方法
JP6422262B2 (ja) プラズマ処理方法及びプラズマ処理装置
KR20140092257A (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
CN101471257A (zh) 等离子体蚀刻方法、等离子体蚀刻装置和控制程序
CN101030527A (zh) 等离子体蚀刻方法和计算机可读取的存储介质
WO2023008025A1 (ja) エッチング方法、半導体装置の製造方法、エッチングプログラムおよびプラズマ処理装置
JP7072439B2 (ja) プラズマ処理装置の洗浄方法
KR102104867B1 (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
JP2009200182A (ja) 付着物除去方法及び基板処理方法
JP2016207788A (ja) 上部電極の表面処理方法、プラズマ処理装置及び上部電極
CN100413035C (zh) 等离子体蚀刻方法
CN109075068B (zh) 蚀刻方法
TW201829835A (zh) 被處理體之處理方法
JP2023018631A (ja) エッチング方法、半導体装置の製造方法、プログラムおよびプラズマ処理装置
CN116169050A (zh) 基板处理装置及使用该装置的基板处理方法
JP2010166092A (ja) プラズマエッチング方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant