JP5980476B2 - ポリッシング装置およびポリッシング方法 - Google Patents
ポリッシング装置およびポリッシング方法 Download PDFInfo
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- JP5980476B2 JP5980476B2 JP2010289209A JP2010289209A JP5980476B2 JP 5980476 B2 JP5980476 B2 JP 5980476B2 JP 2010289209 A JP2010289209 A JP 2010289209A JP 2010289209 A JP2010289209 A JP 2010289209A JP 5980476 B2 JP5980476 B2 JP 5980476B2
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- substrate
- optical head
- polishing
- light
- film thickness
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- 238000005498 polishing Methods 0.000 title claims description 286
- 238000000034 method Methods 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims description 353
- 230000003287 optical effect Effects 0.000 claims description 285
- 230000002093 peripheral effect Effects 0.000 claims description 116
- 238000005259 measurement Methods 0.000 claims description 54
- 238000001228 spectrum Methods 0.000 claims description 42
- 238000012545 processing Methods 0.000 claims description 26
- 230000007246 mechanism Effects 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 239000010408 film Substances 0.000 description 145
- 239000007788 liquid Substances 0.000 description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 238000010586 diagram Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 239000012788 optical film Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000012530 fluid Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000012625 in-situ measurement Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Priority Applications (16)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010289209A JP5980476B2 (ja) | 2010-12-27 | 2010-12-27 | ポリッシング装置およびポリッシング方法 |
US13/330,881 US9401293B2 (en) | 2010-12-27 | 2011-12-20 | Polishing apparatus and polishing method |
TW107118720A TWI702668B (zh) | 2010-12-27 | 2011-12-23 | 磨光裝置 |
KR1020110140782A KR101739074B1 (ko) | 2010-12-27 | 2011-12-23 | 폴리싱 장치 및 폴리싱 방법 |
TW109124274A TWI729884B (zh) | 2010-12-27 | 2011-12-23 | 磨光墊 |
TW105113929A TWI629735B (zh) | 2010-12-27 | 2011-12-23 | 磨光裝置 |
TW100148258A TWI538076B (zh) | 2010-12-27 | 2011-12-23 | 磨光裝置、磨光方法及磨光墊 |
TW109124275A TWI724945B (zh) | 2010-12-27 | 2011-12-23 | 磨光裝置 |
US14/808,252 US9969048B2 (en) | 2010-12-27 | 2015-07-24 | Polishing apparatus |
US15/215,343 US20160325399A1 (en) | 2010-12-27 | 2016-07-20 | Polishing apparatus |
JP2016146959A JP6208299B2 (ja) | 2010-12-27 | 2016-07-27 | ポリッシング装置 |
KR1020170061009A KR101868503B1 (ko) | 2010-12-27 | 2017-05-17 | 폴리싱 장치 및 폴리싱 방법 |
US15/949,960 US10343255B2 (en) | 2010-12-27 | 2018-04-10 | Polishing apparatus |
KR1020180047966A KR101966274B1 (ko) | 2010-12-27 | 2018-04-25 | 폴리싱 장치 및 폴리싱 방법 |
KR1020190036511A KR102025784B1 (ko) | 2010-12-27 | 2019-03-29 | 폴리싱 장치 및 폴리싱 방법 |
KR1020190036506A KR102017770B1 (ko) | 2010-12-27 | 2019-03-29 | 폴리싱 장치 및 폴리싱 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010289209A JP5980476B2 (ja) | 2010-12-27 | 2010-12-27 | ポリッシング装置およびポリッシング方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016146959A Division JP6208299B2 (ja) | 2010-12-27 | 2016-07-27 | ポリッシング装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012138442A JP2012138442A (ja) | 2012-07-19 |
JP2012138442A5 JP2012138442A5 (ko) | 2014-02-13 |
JP5980476B2 true JP5980476B2 (ja) | 2016-08-31 |
Family
ID=46317752
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010289209A Active JP5980476B2 (ja) | 2010-12-27 | 2010-12-27 | ポリッシング装置およびポリッシング方法 |
JP2016146959A Active JP6208299B2 (ja) | 2010-12-27 | 2016-07-27 | ポリッシング装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016146959A Active JP6208299B2 (ja) | 2010-12-27 | 2016-07-27 | ポリッシング装置 |
Country Status (4)
Country | Link |
---|---|
US (4) | US9401293B2 (ko) |
JP (2) | JP5980476B2 (ko) |
KR (5) | KR101739074B1 (ko) |
TW (5) | TWI538076B (ko) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010173052A (ja) * | 2009-02-02 | 2010-08-12 | Sumco Corp | 研磨パッド厚測定方法、および研磨パッド厚測定装置 |
US8545289B2 (en) * | 2011-04-13 | 2013-10-01 | Nanya Technology Corporation | Distance monitoring device |
JP2013222856A (ja) * | 2012-04-17 | 2013-10-28 | Ebara Corp | 研磨装置および研磨方法 |
KR101387980B1 (ko) * | 2012-11-22 | 2014-04-22 | 주식회사 케이씨텍 | 화학 기계적 연마 시스템의 웨이퍼 막두께 모니터링 장치 및 방법 |
USD731448S1 (en) | 2013-10-29 | 2015-06-09 | Ebara Corporation | Polishing pad for substrate polishing apparatus |
KR101539208B1 (ko) * | 2013-12-02 | 2015-07-24 | 주식회사 케이씨텍 | 화학 기계적 연마 시스템의 웨이퍼 막두께 모니터링 장치 및 방법 |
JP6266493B2 (ja) * | 2014-03-20 | 2018-01-24 | 株式会社荏原製作所 | 研磨装置及び研磨方法 |
JP6399873B2 (ja) * | 2014-09-17 | 2018-10-03 | 株式会社荏原製作所 | 膜厚信号処理装置、研磨装置、膜厚信号処理方法、及び、研磨方法 |
JP6109224B2 (ja) * | 2015-03-30 | 2017-04-05 | 株式会社日立国際電気 | 半導体装置の製造方法、プログラムおよび基板処理装置 |
JP6133347B2 (ja) | 2015-03-30 | 2017-05-24 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理システム及びプログラム |
JP6473050B2 (ja) * | 2015-06-05 | 2019-02-20 | 株式会社荏原製作所 | 研磨装置 |
KR101664110B1 (ko) * | 2015-07-27 | 2016-10-24 | 주식회사 케이씨텍 | 베어 웨이퍼의 연마 장치 |
TW201710029A (zh) * | 2015-09-01 | 2017-03-16 | Ebara Corp | 渦電流檢測器 |
JP6591043B2 (ja) * | 2016-03-14 | 2019-10-16 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及びコンピュータ読み取り可能な記録媒体 |
JP6650341B2 (ja) * | 2016-05-13 | 2020-02-19 | スピードファム株式会社 | 断面形状測定方法 |
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JP6795337B2 (ja) * | 2016-06-29 | 2020-12-02 | 株式会社荏原製作所 | 膜厚信号処理装置、研磨装置、膜厚信号処理方法、及び、研磨方法 |
JP6730124B2 (ja) * | 2016-08-01 | 2020-07-29 | 株式会社ディスコ | 厚み計測装置 |
JP6730125B2 (ja) * | 2016-08-01 | 2020-07-29 | 株式会社ディスコ | 計測装置 |
JP6829653B2 (ja) * | 2017-05-17 | 2021-02-10 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
JP7023063B2 (ja) * | 2017-08-08 | 2022-02-21 | 株式会社荏原製作所 | 基板研磨装置及び方法 |
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JP6985107B2 (ja) | 2017-11-06 | 2021-12-22 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
KR102483003B1 (ko) * | 2017-11-13 | 2022-12-30 | 주식회사 케이씨텍 | 웨이퍼 연마 시스템 |
KR102435764B1 (ko) * | 2017-11-17 | 2022-08-24 | 삼성디스플레이 주식회사 | 레이저 결정화 돌기의 제거 장치 및 방법 |
KR102529817B1 (ko) * | 2018-05-02 | 2023-05-08 | 주식회사 케이씨텍 | 산화물층을 갖는 기판 처리 장치 |
JP7179586B2 (ja) * | 2018-11-08 | 2022-11-29 | 株式会社荏原製作所 | 渦電流検出装置及び研磨装置 |
KR20200068785A (ko) * | 2018-12-05 | 2020-06-16 | 삼성디스플레이 주식회사 | 연마 모니터링 시스템 및 연마 모니터링 방법 |
JP7145084B2 (ja) * | 2019-01-11 | 2022-09-30 | 株式会社荏原製作所 | 基板処理装置および基板処理装置において部分研磨されるべき領域を特定する方法 |
KR102093286B1 (ko) * | 2019-07-05 | 2020-05-29 | (주)제이씨글로벌 | 광학적 웨이퍼 엔드포인트 이중검사장치 |
JP7403998B2 (ja) * | 2019-08-29 | 2023-12-25 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
JP7374710B2 (ja) * | 2019-10-25 | 2023-11-07 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
JP7469032B2 (ja) * | 2019-12-10 | 2024-04-16 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
JP7361637B2 (ja) * | 2020-03-09 | 2023-10-16 | 株式会社荏原製作所 | 研磨方法、研磨装置、およびプログラムを記録したコンピュータ読み取り可能な記録媒体 |
JP7365282B2 (ja) * | 2020-03-26 | 2023-10-19 | 株式会社荏原製作所 | 研磨ヘッドシステムおよび研磨装置 |
JP2022108789A (ja) * | 2021-01-14 | 2022-07-27 | 株式会社荏原製作所 | 研磨装置、研磨方法、および基板の膜厚分布の可視化情報を出力する方法 |
CN113664712A (zh) * | 2021-08-13 | 2021-11-19 | 芯盟科技有限公司 | 涡流侦测装置以及金属层厚度的测量方法 |
JP2023094723A (ja) * | 2021-12-24 | 2023-07-06 | 株式会社荏原製作所 | 膜厚測定方法および膜厚測定装置 |
JP7218830B1 (ja) | 2022-04-14 | 2023-02-07 | 信越半導体株式会社 | 両面研磨装置及び両面研磨方法 |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5700180A (en) * | 1993-08-25 | 1997-12-23 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing |
JP3313505B2 (ja) * | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
JPH08174411A (ja) * | 1994-12-22 | 1996-07-09 | Ebara Corp | ポリッシング装置 |
US5838447A (en) * | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
JP2004001227A (ja) | 1995-07-20 | 2004-01-08 | Ebara Corp | ポリッシング装置および方法 |
JP4451432B2 (ja) * | 1995-07-20 | 2010-04-14 | 株式会社荏原製作所 | ポリッシング方法 |
JP3601910B2 (ja) * | 1995-07-20 | 2004-12-15 | 株式会社荏原製作所 | ポリッシング装置及び方法 |
US6384915B1 (en) * | 1998-03-30 | 2002-05-07 | The Regents Of The University Of California | Catheter guided by optical coherence domain reflectometry |
US6106662A (en) * | 1998-06-08 | 2000-08-22 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
US6159073A (en) | 1998-11-02 | 2000-12-12 | Applied Materials, Inc. | Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing |
US6190234B1 (en) | 1999-01-25 | 2001-02-20 | Applied Materials, Inc. | Endpoint detection with light beams of different wavelengths |
JP2001009699A (ja) * | 1999-07-05 | 2001-01-16 | Nichiden Mach Ltd | 平面研磨装置 |
JP2001105308A (ja) * | 1999-10-04 | 2001-04-17 | Asahi Kasei Corp | 光伝送路付研磨装置 |
JP3854056B2 (ja) * | 1999-12-13 | 2006-12-06 | 株式会社荏原製作所 | 基板膜厚測定方法、基板膜厚測定装置、基板処理方法及び基板処理装置 |
KR100718737B1 (ko) * | 2000-01-17 | 2007-05-15 | 가부시키가이샤 에바라 세이사꾸쇼 | 폴리싱 장치 |
JP2001284298A (ja) | 2000-03-30 | 2001-10-12 | Nikon Corp | 研磨状態のモニタリング方法、研磨装置、及び半導体デバイスの製造方法 |
US6923711B2 (en) * | 2000-10-17 | 2005-08-02 | Speedfam-Ipec Corporation | Multizone carrier with process monitoring system for chemical-mechanical planarization tool |
US6805613B1 (en) * | 2000-10-17 | 2004-10-19 | Speedfam-Ipec Corporation | Multiprobe detection system for chemical-mechanical planarization tool |
JP2002359217A (ja) * | 2001-05-31 | 2002-12-13 | Omron Corp | 研磨終点検出方法およびその装置 |
US6678055B2 (en) * | 2001-11-26 | 2004-01-13 | Tevet Process Control Technologies Ltd. | Method and apparatus for measuring stress in semiconductor wafers |
US7024268B1 (en) * | 2002-03-22 | 2006-04-04 | Applied Materials Inc. | Feedback controlled polishing processes |
JP4542324B2 (ja) * | 2002-10-17 | 2010-09-15 | 株式会社荏原製作所 | 研磨状態監視装置及びポリッシング装置 |
JP2004330326A (ja) * | 2003-05-02 | 2004-11-25 | Ebara Corp | ポリッシング装置 |
JP2005268424A (ja) * | 2004-03-17 | 2005-09-29 | Tokyo Seimitsu Co Ltd | 化学機械研磨装置及び化学機械研磨方法 |
JP2005340679A (ja) * | 2004-05-31 | 2005-12-08 | Matsushita Electric Ind Co Ltd | 研磨装置及び研磨終点検出方法ならびに半導体装置の製造方法 |
WO2005123335A1 (en) * | 2004-06-21 | 2005-12-29 | Ebara Corporation | Polishing apparatus and polishing method |
KR101324644B1 (ko) | 2005-08-22 | 2013-11-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법 |
US7115017B1 (en) * | 2006-03-31 | 2006-10-03 | Novellus Systems, Inc. | Methods for controlling the pressures of adjustable pressure zones of a work piece carrier during chemical mechanical planarization |
JP4790475B2 (ja) * | 2006-04-05 | 2011-10-12 | 株式会社荏原製作所 | 研磨装置、研磨方法、および基板の膜厚測定プログラム |
US7264537B1 (en) * | 2006-08-04 | 2007-09-04 | Novellus Systems, Inc. | Methods for monitoring a chemical mechanical planarization process of a metal layer using an in-situ eddy current measuring system |
KR101278236B1 (ko) | 2006-09-12 | 2013-06-24 | 가부시키가이샤 에바라 세이사꾸쇼 | 연마장치 및 연마방법 |
TWI422798B (zh) * | 2006-10-06 | 2014-01-11 | Ebara Corp | 加工終點檢測方法、研磨方法及研磨裝置 |
JP5167010B2 (ja) * | 2008-07-23 | 2013-03-21 | 株式会社荏原製作所 | 研磨終点検知方法および研磨装置 |
IT1391719B1 (it) * | 2008-11-17 | 2012-01-27 | Marposs Spa | Metodo, stazione ed apparecchiatura per la misura ottica mediante interferometria dello spessore di un oggetto |
JP2012028602A (ja) * | 2010-07-26 | 2012-02-09 | Sumitomo Metal Mining Co Ltd | 半導体のウェハーの自動研磨装置及び研磨方法 |
US8535115B2 (en) | 2011-01-28 | 2013-09-17 | Applied Materials, Inc. | Gathering spectra from multiple optical heads |
KR20140040449A (ko) * | 2012-09-26 | 2014-04-03 | 주식회사 엘지실트론 | 웨이퍼 연마장치 |
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- 2018-04-25 KR KR1020180047966A patent/KR101966274B1/ko active IP Right Grant
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Also Published As
Publication number | Publication date |
---|---|
TW201834105A (zh) | 2018-09-16 |
US9969048B2 (en) | 2018-05-15 |
US10343255B2 (en) | 2019-07-09 |
KR20170058893A (ko) | 2017-05-29 |
KR102025784B1 (ko) | 2019-09-26 |
TWI538076B (zh) | 2016-06-11 |
US20160325399A1 (en) | 2016-11-10 |
US20120164917A1 (en) | 2012-06-28 |
KR101966274B1 (ko) | 2019-04-05 |
KR101739074B1 (ko) | 2017-05-23 |
TW201236098A (en) | 2012-09-01 |
KR20190038771A (ko) | 2019-04-09 |
US9401293B2 (en) | 2016-07-26 |
KR20180048490A (ko) | 2018-05-10 |
TW201631681A (zh) | 2016-09-01 |
TWI724945B (zh) | 2021-04-11 |
TWI729884B (zh) | 2021-06-01 |
KR20190038772A (ko) | 2019-04-09 |
JP6208299B2 (ja) | 2017-10-04 |
TWI702668B (zh) | 2020-08-21 |
JP2012138442A (ja) | 2012-07-19 |
KR102017770B1 (ko) | 2019-09-03 |
TW202042322A (zh) | 2020-11-16 |
US20180229346A1 (en) | 2018-08-16 |
TWI629735B (zh) | 2018-07-11 |
US20150332943A1 (en) | 2015-11-19 |
JP2016184770A (ja) | 2016-10-20 |
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