JP5980476B2 - ポリッシング装置およびポリッシング方法 - Google Patents

ポリッシング装置およびポリッシング方法 Download PDF

Info

Publication number
JP5980476B2
JP5980476B2 JP2010289209A JP2010289209A JP5980476B2 JP 5980476 B2 JP5980476 B2 JP 5980476B2 JP 2010289209 A JP2010289209 A JP 2010289209A JP 2010289209 A JP2010289209 A JP 2010289209A JP 5980476 B2 JP5980476 B2 JP 5980476B2
Authority
JP
Japan
Prior art keywords
substrate
optical head
polishing
light
film thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010289209A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012138442A (ja
JP2012138442A5 (enExample
Inventor
小畠　厳貴
厳貴 小畠
小林　洋一
洋一 小林
大野　勝俊
勝俊 大野
将毅 木下
将毅 木下
金馬　利文
利文 金馬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2010289209A priority Critical patent/JP5980476B2/ja
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to US13/330,881 priority patent/US9401293B2/en
Priority to KR1020110140782A priority patent/KR101739074B1/ko
Priority to TW109124275A priority patent/TWI724945B/zh
Priority to TW100148258A priority patent/TWI538076B/zh
Priority to TW109124274A priority patent/TWI729884B/zh
Priority to TW105113929A priority patent/TWI629735B/zh
Priority to TW107118720A priority patent/TWI702668B/zh
Publication of JP2012138442A publication Critical patent/JP2012138442A/ja
Publication of JP2012138442A5 publication Critical patent/JP2012138442A5/ja
Priority to US14/808,252 priority patent/US9969048B2/en
Priority to US15/215,343 priority patent/US20160325399A1/en
Priority to JP2016146959A priority patent/JP6208299B2/ja
Application granted granted Critical
Publication of JP5980476B2 publication Critical patent/JP5980476B2/ja
Priority to KR1020170061009A priority patent/KR101868503B1/ko
Priority to US15/949,960 priority patent/US10343255B2/en
Priority to KR1020180047966A priority patent/KR101966274B1/ko
Priority to KR1020190036511A priority patent/KR102025784B1/ko
Priority to KR1020190036506A priority patent/KR102017770B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
JP2010289209A 2010-12-27 2010-12-27 ポリッシング装置およびポリッシング方法 Active JP5980476B2 (ja)

Priority Applications (16)

Application Number Priority Date Filing Date Title
JP2010289209A JP5980476B2 (ja) 2010-12-27 2010-12-27 ポリッシング装置およびポリッシング方法
US13/330,881 US9401293B2 (en) 2010-12-27 2011-12-20 Polishing apparatus and polishing method
KR1020110140782A KR101739074B1 (ko) 2010-12-27 2011-12-23 폴리싱 장치 및 폴리싱 방법
TW109124275A TWI724945B (zh) 2010-12-27 2011-12-23 磨光裝置
TW100148258A TWI538076B (zh) 2010-12-27 2011-12-23 磨光裝置、磨光方法及磨光墊
TW109124274A TWI729884B (zh) 2010-12-27 2011-12-23 磨光墊
TW105113929A TWI629735B (zh) 2010-12-27 2011-12-23 磨光裝置
TW107118720A TWI702668B (zh) 2010-12-27 2011-12-23 磨光裝置
US14/808,252 US9969048B2 (en) 2010-12-27 2015-07-24 Polishing apparatus
US15/215,343 US20160325399A1 (en) 2010-12-27 2016-07-20 Polishing apparatus
JP2016146959A JP6208299B2 (ja) 2010-12-27 2016-07-27 ポリッシング装置
KR1020170061009A KR101868503B1 (ko) 2010-12-27 2017-05-17 폴리싱 장치 및 폴리싱 방법
US15/949,960 US10343255B2 (en) 2010-12-27 2018-04-10 Polishing apparatus
KR1020180047966A KR101966274B1 (ko) 2010-12-27 2018-04-25 폴리싱 장치 및 폴리싱 방법
KR1020190036511A KR102025784B1 (ko) 2010-12-27 2019-03-29 폴리싱 장치 및 폴리싱 방법
KR1020190036506A KR102017770B1 (ko) 2010-12-27 2019-03-29 폴리싱 장치 및 폴리싱 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010289209A JP5980476B2 (ja) 2010-12-27 2010-12-27 ポリッシング装置およびポリッシング方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016146959A Division JP6208299B2 (ja) 2010-12-27 2016-07-27 ポリッシング装置

Publications (3)

Publication Number Publication Date
JP2012138442A JP2012138442A (ja) 2012-07-19
JP2012138442A5 JP2012138442A5 (enExample) 2014-02-13
JP5980476B2 true JP5980476B2 (ja) 2016-08-31

Family

ID=46317752

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2010289209A Active JP5980476B2 (ja) 2010-12-27 2010-12-27 ポリッシング装置およびポリッシング方法
JP2016146959A Active JP6208299B2 (ja) 2010-12-27 2016-07-27 ポリッシング装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2016146959A Active JP6208299B2 (ja) 2010-12-27 2016-07-27 ポリッシング装置

Country Status (4)

Country Link
US (4) US9401293B2 (enExample)
JP (2) JP5980476B2 (enExample)
KR (5) KR101739074B1 (enExample)
TW (5) TWI702668B (enExample)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010173052A (ja) * 2009-02-02 2010-08-12 Sumco Corp 研磨パッド厚測定方法、および研磨パッド厚測定装置
US8545289B2 (en) * 2011-04-13 2013-10-01 Nanya Technology Corporation Distance monitoring device
JP2013222856A (ja) * 2012-04-17 2013-10-28 Ebara Corp 研磨装置および研磨方法
KR101387980B1 (ko) * 2012-11-22 2014-04-22 주식회사 케이씨텍 화학 기계적 연마 시스템의 웨이퍼 막두께 모니터링 장치 및 방법
USD731448S1 (en) 2013-10-29 2015-06-09 Ebara Corporation Polishing pad for substrate polishing apparatus
KR101539208B1 (ko) * 2013-12-02 2015-07-24 주식회사 케이씨텍 화학 기계적 연마 시스템의 웨이퍼 막두께 모니터링 장치 및 방법
JP6266493B2 (ja) * 2014-03-20 2018-01-24 株式会社荏原製作所 研磨装置及び研磨方法
JP6399873B2 (ja) * 2014-09-17 2018-10-03 株式会社荏原製作所 膜厚信号処理装置、研磨装置、膜厚信号処理方法、及び、研磨方法
JP6109224B2 (ja) * 2015-03-30 2017-04-05 株式会社日立国際電気 半導体装置の製造方法、プログラムおよび基板処理装置
JP6133347B2 (ja) * 2015-03-30 2017-05-24 株式会社日立国際電気 半導体装置の製造方法、基板処理システム及びプログラム
JP6473050B2 (ja) * 2015-06-05 2019-02-20 株式会社荏原製作所 研磨装置
KR101664110B1 (ko) * 2015-07-27 2016-10-24 주식회사 케이씨텍 베어 웨이퍼의 연마 장치
TW201710029A (zh) * 2015-09-01 2017-03-16 荏原製作所股份有限公司 渦電流檢測器
WO2017158955A1 (ja) * 2016-03-14 2017-09-21 東京エレクトロン株式会社 基板処理装置、基板処理方法及びコンピュータ読み取り可能な記録媒体
JP6650341B2 (ja) * 2016-05-13 2020-02-19 スピードファム株式会社 断面形状測定方法
JP2018001296A (ja) * 2016-06-28 2018-01-11 株式会社荏原製作所 研磨装置、研磨方法、及び研磨制御プログラム
JP6795337B2 (ja) * 2016-06-29 2020-12-02 株式会社荏原製作所 膜厚信号処理装置、研磨装置、膜厚信号処理方法、及び、研磨方法
JP6730124B2 (ja) * 2016-08-01 2020-07-29 株式会社ディスコ 厚み計測装置
JP6730125B2 (ja) * 2016-08-01 2020-07-29 株式会社ディスコ 計測装置
JP6829653B2 (ja) * 2017-05-17 2021-02-10 株式会社荏原製作所 研磨装置および研磨方法
JP7023063B2 (ja) * 2017-08-08 2022-02-21 株式会社荏原製作所 基板研磨装置及び方法
JP6902452B2 (ja) * 2017-10-19 2021-07-14 株式会社荏原製作所 研磨装置
JP6847811B2 (ja) 2017-10-24 2021-03-24 株式会社荏原製作所 研磨方法および研磨装置
JP6985107B2 (ja) 2017-11-06 2021-12-22 株式会社荏原製作所 研磨方法および研磨装置
KR102483003B1 (ko) * 2017-11-13 2022-12-30 주식회사 케이씨텍 웨이퍼 연마 시스템
KR102435764B1 (ko) * 2017-11-17 2022-08-24 삼성디스플레이 주식회사 레이저 결정화 돌기의 제거 장치 및 방법
KR102529817B1 (ko) * 2018-05-02 2023-05-08 주식회사 케이씨텍 산화물층을 갖는 기판 처리 장치
JP7179586B2 (ja) * 2018-11-08 2022-11-29 株式会社荏原製作所 渦電流検出装置及び研磨装置
KR20200068785A (ko) * 2018-12-05 2020-06-16 삼성디스플레이 주식회사 연마 모니터링 시스템 및 연마 모니터링 방법
JP7145084B2 (ja) * 2019-01-11 2022-09-30 株式会社荏原製作所 基板処理装置および基板処理装置において部分研磨されるべき領域を特定する方法
KR102093286B1 (ko) * 2019-07-05 2020-05-29 (주)제이씨글로벌 광학적 웨이퍼 엔드포인트 이중검사장치
JP7403998B2 (ja) * 2019-08-29 2023-12-25 株式会社荏原製作所 研磨装置および研磨方法
JP7374710B2 (ja) * 2019-10-25 2023-11-07 株式会社荏原製作所 研磨方法および研磨装置
JP7469032B2 (ja) * 2019-12-10 2024-04-16 株式会社荏原製作所 研磨方法および研磨装置
JP7361637B2 (ja) * 2020-03-09 2023-10-16 株式会社荏原製作所 研磨方法、研磨装置、およびプログラムを記録したコンピュータ読み取り可能な記録媒体
JP7365282B2 (ja) * 2020-03-26 2023-10-19 株式会社荏原製作所 研磨ヘッドシステムおよび研磨装置
JP7709281B2 (ja) * 2021-01-14 2025-07-16 株式会社荏原製作所 研磨装置、研磨方法、および基板の膜厚分布の可視化情報を出力する方法
JP7575309B2 (ja) * 2021-03-17 2024-10-29 株式会社荏原製作所 膜厚測定方法、ノッチ部の検出方法、および研磨装置
JP7547275B2 (ja) * 2021-03-31 2024-09-09 株式会社荏原製作所 ワークピースの膜厚を推定するモデルを作成する方法、そのようなモデルを用いてワークピースの研磨中に膜厚を推定する方法、およびコンピュータにこれらの方法を実行させるためのプログラム
CN113664712A (zh) * 2021-08-13 2021-11-19 芯盟科技有限公司 涡流侦测装置以及金属层厚度的测量方法
JP7680347B2 (ja) * 2021-12-24 2025-05-20 株式会社荏原製作所 膜厚測定方法および膜厚測定装置
JP7218830B1 (ja) 2022-04-14 2023-02-07 信越半導体株式会社 両面研磨装置及び両面研磨方法
WO2024015530A1 (en) * 2022-07-14 2024-01-18 Applied Materials, Inc. Monitoring thickness in face-up polishing
CN116810618A (zh) * 2023-07-06 2023-09-29 华海清科股份有限公司 一种用于cmp的光学测量装置和化学机械抛光设备
US12416490B1 (en) * 2024-05-29 2025-09-16 Beijing Tsd Semiconductor Co., Ltd. Method and chemical mechanical planarization device for in-situ measurement of film thickness
WO2025246244A1 (zh) * 2024-05-29 2025-12-04 北京特思迪半导体设备有限公司 用于原位测量膜厚的方法、参考光谱生成方法及设备

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5700180A (en) * 1993-08-25 1997-12-23 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing
JP3313505B2 (ja) * 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
JPH08174411A (ja) * 1994-12-22 1996-07-09 Ebara Corp ポリッシング装置
JP4451432B2 (ja) * 1995-07-20 2010-04-14 株式会社荏原製作所 ポリッシング方法
US5838447A (en) * 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
JP2004001227A (ja) 1995-07-20 2004-01-08 Ebara Corp ポリッシング装置および方法
JP3601910B2 (ja) * 1995-07-20 2004-12-15 株式会社荏原製作所 ポリッシング装置及び方法
US6384915B1 (en) * 1998-03-30 2002-05-07 The Regents Of The University Of California Catheter guided by optical coherence domain reflectometry
US6106662A (en) * 1998-06-08 2000-08-22 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
US6159073A (en) 1998-11-02 2000-12-12 Applied Materials, Inc. Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing
US6190234B1 (en) 1999-01-25 2001-02-20 Applied Materials, Inc. Endpoint detection with light beams of different wavelengths
JP2001009699A (ja) * 1999-07-05 2001-01-16 Nichiden Mach Ltd 平面研磨装置
JP2001105308A (ja) * 1999-10-04 2001-04-17 Asahi Kasei Corp 光伝送路付研磨装置
JP3854056B2 (ja) 1999-12-13 2006-12-06 株式会社荏原製作所 基板膜厚測定方法、基板膜厚測定装置、基板処理方法及び基板処理装置
KR100718737B1 (ko) * 2000-01-17 2007-05-15 가부시키가이샤 에바라 세이사꾸쇼 폴리싱 장치
JP2001284298A (ja) 2000-03-30 2001-10-12 Nikon Corp 研磨状態のモニタリング方法、研磨装置、及び半導体デバイスの製造方法
US6805613B1 (en) * 2000-10-17 2004-10-19 Speedfam-Ipec Corporation Multiprobe detection system for chemical-mechanical planarization tool
US6923711B2 (en) * 2000-10-17 2005-08-02 Speedfam-Ipec Corporation Multizone carrier with process monitoring system for chemical-mechanical planarization tool
JP2002359217A (ja) * 2001-05-31 2002-12-13 Omron Corp 研磨終点検出方法およびその装置
US6678055B2 (en) * 2001-11-26 2004-01-13 Tevet Process Control Technologies Ltd. Method and apparatus for measuring stress in semiconductor wafers
US7024268B1 (en) * 2002-03-22 2006-04-04 Applied Materials Inc. Feedback controlled polishing processes
JP4542324B2 (ja) 2002-10-17 2010-09-15 株式会社荏原製作所 研磨状態監視装置及びポリッシング装置
JP2004330326A (ja) * 2003-05-02 2004-11-25 Ebara Corp ポリッシング装置
JP2005268424A (ja) * 2004-03-17 2005-09-29 Tokyo Seimitsu Co Ltd 化学機械研磨装置及び化学機械研磨方法
JP2005340679A (ja) * 2004-05-31 2005-12-08 Matsushita Electric Ind Co Ltd 研磨装置及び研磨終点検出方法ならびに半導体装置の製造方法
EP1758711B1 (en) * 2004-06-21 2013-08-07 Ebara Corporation Polishing apparatus and polishing method
KR101324644B1 (ko) 2005-08-22 2013-11-01 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법
US7115017B1 (en) * 2006-03-31 2006-10-03 Novellus Systems, Inc. Methods for controlling the pressures of adjustable pressure zones of a work piece carrier during chemical mechanical planarization
JP4790475B2 (ja) * 2006-04-05 2011-10-12 株式会社荏原製作所 研磨装置、研磨方法、および基板の膜厚測定プログラム
US7264537B1 (en) * 2006-08-04 2007-09-04 Novellus Systems, Inc. Methods for monitoring a chemical mechanical planarization process of a metal layer using an in-situ eddy current measuring system
KR101278236B1 (ko) 2006-09-12 2013-06-24 가부시키가이샤 에바라 세이사꾸쇼 연마장치 및 연마방법
CN101523565B (zh) * 2006-10-06 2012-02-29 株式会社荏原制作所 加工终点检测方法、研磨方法及研磨装置
JP5167010B2 (ja) * 2008-07-23 2013-03-21 株式会社荏原製作所 研磨終点検知方法および研磨装置
IT1391719B1 (it) * 2008-11-17 2012-01-27 Marposs Spa Metodo, stazione ed apparecchiatura per la misura ottica mediante interferometria dello spessore di un oggetto
JP2012028602A (ja) * 2010-07-26 2012-02-09 Sumitomo Metal Mining Co Ltd 半導体のウェハーの自動研磨装置及び研磨方法
US8535115B2 (en) 2011-01-28 2013-09-17 Applied Materials, Inc. Gathering spectra from multiple optical heads
KR20140040449A (ko) * 2012-09-26 2014-04-03 주식회사 엘지실트론 웨이퍼 연마장치

Also Published As

Publication number Publication date
JP2012138442A (ja) 2012-07-19
KR101868503B1 (ko) 2018-06-19
TWI538076B (zh) 2016-06-11
US9969048B2 (en) 2018-05-15
US9401293B2 (en) 2016-07-26
TWI724945B (zh) 2021-04-11
TW201631681A (zh) 2016-09-01
TW202042322A (zh) 2020-11-16
TW201236098A (en) 2012-09-01
US20180229346A1 (en) 2018-08-16
KR20190038772A (ko) 2019-04-09
US20150332943A1 (en) 2015-11-19
US20160325399A1 (en) 2016-11-10
US20120164917A1 (en) 2012-06-28
TW202042323A (zh) 2020-11-16
KR20120074227A (ko) 2012-07-05
JP2016184770A (ja) 2016-10-20
TWI729884B (zh) 2021-06-01
KR102025784B1 (ko) 2019-09-26
KR102017770B1 (ko) 2019-09-03
TW201834105A (zh) 2018-09-16
US10343255B2 (en) 2019-07-09
TWI702668B (zh) 2020-08-21
JP6208299B2 (ja) 2017-10-04
TWI629735B (zh) 2018-07-11
KR101739074B1 (ko) 2017-05-23
KR20180048490A (ko) 2018-05-10
KR20170058893A (ko) 2017-05-29
KR20190038771A (ko) 2019-04-09
KR101966274B1 (ko) 2019-04-05

Similar Documents

Publication Publication Date Title
JP5980476B2 (ja) ポリッシング装置およびポリッシング方法
JP6470366B2 (ja) ポリッシング装置
JP5612945B2 (ja) 基板の研磨の進捗を監視する方法および研磨装置
JP5301931B2 (ja) 研磨方法および研磨装置
KR102283692B1 (ko) 막 두께 측정 방법, 막 두께 측정 장치, 연마 방법 및 연마 장치
TWI788383B (zh) 研磨裝置及研磨方法
CN108857859B (zh) 晶片的抛光控制方法及抛光系统
TW202438225A (zh) 研磨裝置及研磨方法
KR102483003B1 (ko) 웨이퍼 연마 시스템
JP2024092954A (ja) 研磨装置及び研磨方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131223

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20131223

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20141217

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150106

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150304

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20151104

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151228

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160628

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160727

R150 Certificate of patent or registration of utility model

Ref document number: 5980476

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250