JP5968470B2 - レドーム用セラミック材料、レドームおよびその製造方法 - Google Patents
レドーム用セラミック材料、レドームおよびその製造方法 Download PDFInfo
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Description
約80〜95%(重量%)のSi3N4;ならびに
2.5〜12.5%(重量%)のSiO2、0.5〜3%(重量%)のMgOおよび2〜6%(重量%)のAl2O3を含んだ約5〜15%(重量%)のケイ酸アルミン酸マグネシウム
を含んで成り、
2.5g/cm3以上の密度および6.5を超えない誘電率を有している、レドーム用セラミック材料。
約80〜95%(重量%)のSi3N4粉末、ならびに、2.5〜12.5%(重量%)のSiO2、0.5〜3%(重量%)のMgOおよび2〜6%(重量%)のAl2O3を含んだ約5〜15%(重量%)のケイ酸アルミン酸マグネシウム粉末の均一混合物を形成する工程a;
少なくとも1つの有機バインダーを前記混合物に加える工程b;
前記混合物をアトマイズする工程c;
特別なモールド(mold)で前記混合物を周囲温度にて等方圧加圧(または等方圧プレス、isostatic pressing)に付して未焼結な半製品を形成する工程d;
未焼結な半製品を機械加工して未焼結な半製品に最終形状を実質的に付与する工程e;
最終形状を付与された未焼結な半製品を熱サイクルに付す工程f;
未焼結な半製品を焼結して最終製品を得る工程g
を含んで成る、レドームの製造方法。
Si3N4をSiO2と混合してプレ混合物を形成するサブ工程a’;および
プレ混合物をMgOおよびAl2O3と混合するサブ工程a”
と2つのサブ工程を含んで成る。
300℃〜390℃の温度に達するまで8℃/hで昇温するサブ工程f’;
その温度に半製品を3〜6時間おくサブ工程f”
と2つのサブ工程を含んで成る。
約80〜95%(重量%)のSi3N4粉末、ならびに、2.5〜12.5%(重量%)のSiO2、0.5〜3%(重量%)のMgOおよび2〜6%(重量%)のAl2O3を含んだ約5〜15%(重量%)のケイ酸アルミン酸マグネシウム粉末の均一混合物を形成する第1工程aが供される。
−300℃〜390℃の温度に達するまで8℃/hで昇温する。
−その温度を3〜6時間維持する。
得られた結果から、用いられた特定の組成および製造方法の特定の工程の組合せによって良好な機械特性、良好な熱耐性および良好な誘電特性を得ることができることが示された。
Claims (11)
- レドーム用セラミック材料であって、
90〜94%(重量%)のSi3N4;ならびに
3.2〜5.2%(重量%)のSiO2、0.7〜2%(重量%)のMgOおよび2.1〜4%(重量%)のAl2O3を含んだ6〜10%(重量%)のケイ酸アルミン酸マグネシウム
を含んで成り、
2.5g/cm3以上の密度およびXバンド、Kuバンド又はKaバンドの測定周波数帯において6.5を超えない誘電率を有している、レドーム用セラミック材料。 - 前記密度が2.5〜2.9g/cm3であり、および/または、前記誘電率がXバンド、Kuバンド又はKaバンドの測定周波数帯において5.7〜6.4である、請求項1に記載のレドーム用セラミック材料。
- 15〜35%(Si 3 N 4 の全重量に基づく重量%)のSi3N4がβ−Si3N4である、請求項1または2に記載のレドーム用セラミック材料。
- 90%(重量%)のSi3N4、5.1%(重量%)のSiO2、1.4%(重量%)のMgOおよび3.5%(重量%)のAl2O3を含んでなる、請求項1〜3のいずれかに記載のレドーム用セラミック材料。
- 請求項1〜4のいずれかに記載のセミラック材料を含んで成るレドーム。
- レドームを製造するための方法であって、
80〜95%(重量%)のSi3N4粉末、ならびに、2.5〜12.5%(重量%)のSiO2、0.5〜3%(重量%)のMgOおよび2〜6%(重量%)のAl2O3を含んだ5〜15%(重量%)のケイ酸アルミン酸マグネシウム粉末の均一混合物を形成する工程a;
少なくとも1つの有機バインダーを前記混合物に加える工程b;
前記混合物を微粉末に変えるアトマイズ処理を行う工程c;
モールドで前記微粉末を周囲温度にて等方圧加圧に付して未焼結な半製品を形成する工程d;
未焼結な半製品を機械加工して未焼結な半製品に最終形状を実質的に付与する工程e;
最終形状を付与された未焼結な半製品を熱サイクルに付す工程f;
未焼結な半製品を焼結して最終製品を得る工程g
を含んで成る、レドームの製造方法。 - 均一混合物を形成する工程aが、
Si3N4をSiO2と混合してプレ混合物を形成するサブ工程a’;および
プレ混合物をMgOおよびAl2O3と混合するサブ工程a”
と2つのサブ工程を含んで成る、請求項6に記載のレドームの製造方法。 - 最終形状を付与された未焼結な半製品を熱サイクルに付す工程fが
300℃〜390℃の温度に達するまで8℃/hで昇温する工程f’;
その温度に半製品を3〜6時間おく工程f”
と2つのサブ工程を含んで成る、請求項6または7に記載のレドームの製造方法。 - 最終形状を付与された未焼結な半製品を熱サイクルに付す工程fが、サポート、および/または、有機バインダーがピースから出ていくことを確実にするようにガスを運ぶシステムを有して成る炉において行われる、請求項6〜8のいずれかに記載のレドームの製造方法。
- 未焼結な半製品を焼結して最終製品を得る工程gを、半製品と同じ材料から成るサポート上で実施する、請求項6〜9のいずれかに記載のレドームの製造方法。
- 前記混合物が、
90〜94%(重量%)のSi3N4;ならびに
3.2〜5.2%(重量%)のSiO2、0.7〜2%(重量%)のMgOおよび2.1〜4%(重量%)のAl2O3を含んだ6〜10%(重量%)のケイ酸アルミン酸マグネシウム
を含んでなる、請求項6に記載のレドームの製造方法。
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CN112408990B (zh) * | 2019-08-20 | 2023-05-02 | 山东工业陶瓷研究设计院有限公司 | 与红外材料性能匹配的陶瓷透波材料、天线罩及制备方法 |
CN114072370A (zh) | 2019-09-20 | 2022-02-18 | 阿塞尔桑电子工业及贸易股份公司 | 由连续陶瓷细丝制造功能分级结构的方法 |
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US4677443A (en) * | 1979-01-26 | 1987-06-30 | The Boeing Company | Broadband high temperature radome apparatus |
US4542109A (en) * | 1983-08-09 | 1985-09-17 | Gte Laboratories Incorporated | Silicon nitride-cordierite ceramic article, and process of manufacture thereof |
JPS61201667A (ja) * | 1985-03-05 | 1986-09-06 | 住友電気工業株式会社 | 窒化珪素質セラミツクスの製造方法 |
US4654315A (en) * | 1985-04-08 | 1987-03-31 | Gte Products Corporation | Low dielectric loss silicon nitride based material |
US4642299A (en) * | 1985-04-08 | 1987-02-10 | Gte Products Corporation | Silicon nitride having low dielectric loss |
US5034356A (en) * | 1989-08-07 | 1991-07-23 | General Electric Company | Ceramic matrix composite |
US5023215A (en) * | 1989-10-26 | 1991-06-11 | Gte Products Corporation | Cordierite-silicon nitride body |
US5156830A (en) | 1990-07-24 | 1992-10-20 | Eaton Corporation | Process for preparing an alpha-phase silicon nitride material and thereafter converting to non-densified beta-phase material |
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US5376602A (en) * | 1993-12-23 | 1994-12-27 | The Dow Chemical Company | Low temperature, pressureless sintering of silicon nitride |
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EP2817273A1 (en) | 2014-12-31 |
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