JP5965537B2 - 複数の導電性ポストを平坦化する半導体構造および方法 - Google Patents
複数の導電性ポストを平坦化する半導体構造および方法 Download PDFInfo
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- JP5965537B2 JP5965537B2 JP2015500432A JP2015500432A JP5965537B2 JP 5965537 B2 JP5965537 B2 JP 5965537B2 JP 2015500432 A JP2015500432 A JP 2015500432A JP 2015500432 A JP2015500432 A JP 2015500432A JP 5965537 B2 JP5965537 B2 JP 5965537B2
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Description
Claims (23)
- 半導体基板へと伸長する複数の導電性ポストを平坦化する方法であって、
前記半導体基板の表面にわたって、かつ、前記複数のポストの複数の側壁表面および複数の上部表面に沿ってライナーを形成することと、
前記ライナー上かつ前記複数のポストの間に充填材料を形成することであって、前記充填材料は、一つ以上の有機組成を含むように、形成することと、
前記充填材料を含まずに前記複数のポストと前記ライナーとを含む平坦化された表面を構成するように、平坦化することと、
を含む、
ことを特徴とする方法。 - 半導体基板へと伸長する複数の導電性ポストを平坦化する方法であって、
前記半導体基板の表面にわたって、かつ、前記複数のポストの複数の側壁表面および複数の上部表面に沿ってライナーを形成することと、
前記ライナー上かつ前記複数のポストの間に充填材料を形成することであって、前記充填材料は、一つ以上の有機組成を含むように、形成することと、
前記複数のポストと前記ライナーと前記充填剤を含む平坦化された表面を構成するように、平坦化することと、
前記平坦化された表面を形成した後に、前記充填材料を除去することと、
を含む、ことを特徴とする方法。 - 前記充填材料はフォトレジストを含む、
ことを特徴とする請求項1又は2に記載の方法。 - 前記半導体基板は、半導体ダイを含み、前記半導体基板の表面は前記ダイの裏側表面であって、前記複数の導電性ポストは、前記ダイ全体を通って伸長する、
ことを特徴とする請求項1又は2に記載の方法。 - 前記方法は、前記複数のポストの前記平坦化された複数の表面に直面し、かつ前記複数のポストと一対一対応の複数の導電性キャップを形成することをさらに含む、
ことを特徴とする請求項1に記載の方法。 - 前記方法は、前記複数のポストの間から前記充填材料を除去した後で、前記複数のポストの複数の側壁表面に沿って、かつ、前記複数のポストの間の前記半導体基板の前記表面にわたって、前記ライナーを残すことをさらに含む、
ことを特徴とする請求項2に記載の方法。 - 前記複数のポストの複数の平坦化された上部表面に直面し、かつ、前記複数のポストの前記複数の側壁表面に沿って、複数の導電性キャップを形成することをさらに含み、前記複数のポストの前記複数の側壁表面に沿った前記複数の導電性キャップの複数の領域は、前記ライナーによって前記複数の側壁表面から間隔を開けられる、
ことを特徴とする請求項6に記載の方法。 - 前記平坦化の後、前記ライナーにわたって、パターン化された電気的に絶縁性の材料を形成することであって、前記パターン化された電気的に絶縁性の材料は、前記複数のポストの平坦化された複数の上部表面の周囲に複数の挿入領域を画定するように、形成することと、
前記複数の挿入領域内、かつ前記複数のポストの前記平坦化された複数の上部表面に直面し、前記複数のポストの前記複数の側壁表面に沿って複数の導電性キャップを形成することであって、前記複数のポストの前記複数の側壁表面に沿った前記複数の導電性キャップの複数の領域は、前記ライナーによって前記複数の側壁表面から間隔を開けられるように、形成することと、
をさらに含む、
ことを特徴とする請求項6に記載の方法。 - 前記パターン化された電気的に絶縁性の材料はポリイミドを含む、
ことを特徴とする請求項8に記載の方法。 - 前記ライナーは、その中に伸長する一つ以上のピンホールを有する窒化シリコンを含み、前記パターン化された電気的に絶縁性の材料は、前記一つ以上のピンホールを充填する、
ことを特徴とする請求項8に記載の方法。 - 前記複数の導電性ポストは銅を含み、前記ライナーは窒化シリコンを含む、
ことを特徴とする請求項1又は2に記載の方法。 - 前記ライナーは、一つ以上の無機組成を含み、前記充填材料は一つ以上の有機組成を含み、
前記複数のポストの複数の側壁方面に沿って、かつ、前記複数のポスト間の前記半導体基板の前記表面にわたって前記ライナーを残すことと、
を含む、
ことを特徴とする請求項2に記載の方法。 - 前記基板は、半導体ダイを含み、前記半導体基板の前記表面は、前記ダイの裏側表面であって、前記複数の導電性ポストは、全体に前記ダイを通って伸長する複数の銅含有ポストである、
ことを特徴とする請求項12に記載の方法。 - 前記複数のポストの複数の平坦化された上部表面に直面し、前記複数のポストの前記複数の側壁表面に沿った前記ライナーに直面するように、導電性材料を形成することと、
前記複数のポストの前記平坦化された複数の上部表面上に複数の導電性キャップを形成するために、前記導電性材料上に銅を成長させることと、
をさらに含む、
ことを特徴とする請求項12に記載の方法。 - 前記平坦化の後、前記ライナーにわたってパターン化された電気的に絶縁性の材料を形成することであって、前記パターン化された電気的に絶縁性の材料は、前記複数のポストの複数の平坦化された上部表面の周囲に複数の挿入領域を画定するように、形成することと、
前記複数のポストの複数の平坦化された上部表面に直面し、前記複数のポストの前記複数の側壁表面に沿った前記ライナーに直面して、導電性材料を形成することと、
前記複数のポストの前記平坦化された複数の上部表面上に複数の導電性キャップを形成するために、前記導電性材料上に銅を成長させることと、
をさらに含む、
ことを特徴とする請求項12に記載の方法。 - 半導体ダイを通って伸長する複数の導電性ポストであって、前記複数のポストは、前記ダイの裏側表面上に複数の上部表面を有し、前記ダイの前記裏側表面および前記複数の上部表面の間に伸長する複数の側壁表面を有する、複数の導電性ポストと、
前記複数のポストの前記複数の側壁表面に沿い、かつ、前記ダイの前記裏側表面に沿ったライナーであって、前記複数のポストの前記複数の側壁表面に沿った複数の領域から前記ダイの前記裏側表面に沿った複数の領域へと変化するうえで、実質的に直角を含むように構成される、ライナーと、
前記複数のポストの前記複数の上部表面に直面する複数の導電性キャップであって、前記複数のキャップは、前記複数のポストの前記複数の側壁表面に沿い、かつ前記ライナーによって前記複数の側壁表面から間隔をあけられた複数のリムを有し、前記複数のリムは、複数の底部表面を有し、かつ、前記複数の底部表面から前記複数のポストの前記複数の側壁表面に沿った複数の領域へと変化するうえで、実質的に直角を含むように構成される、複数の導電性キャップと、
前記複数のポストの前記複数の上部表面の周囲に複数の挿入領域を画定するパターン化された電気的に絶縁性の材料であって、前記電気的に絶縁性の材料は、前記複数のリムの前記複数の底部表面が前記電気的に絶縁性の材料の上部へ接し、かつ、前記複数のリムが、前記複数の挿入領域へと伸長するように形成され、前記電気的に絶縁性の材料は、前記複数の挿入領域に隣接する厚い部分と、前記複数の挿入領域に対応する複数の薄い部分とを有し、前記複数の挿入領域のうちの他の部分が前記複数のリムを超えて外側へ横方向に伸長するように、前記複数のリムは前記複数の挿入領域のうちの一部に沿ってのみ存在し、前記複数の挿入領域のうちの前記他の部分は、前記複数のリムと前記電気的に絶縁性の材料の前記複数の厚い部分との間に存在する、パターン化された電気的に絶縁性の材料と、
を含む、
ことを特徴とする半導体構造。 - 前記パターン化された電気的に絶縁性の材料は、ポリイミドを含む、
ことを特徴とする請求項16に記載の構造。 - 前記ライナーは、一つの物質で構成される、
ことを特徴とする請求項16に記載の構造。 - 前記ライナーは、窒化シリコンで構成される、
ことを特徴とする請求項18に記載の構造。 - 前記ライナーはルテニウムを含む、
ことを特徴とする請求項16に記載の構造。 - 前記複数の導電性ポストは銅を含む、
ことを特徴とする請求項20に記載の構造。 - 前記ライナーは二つ以上の物質を含む、
ことを特徴とする請求項16に記載の構造。 - 前記複数の導電性キャップは、ニッケルおよびパラジウムのうちの一方もしくは双方を含む、
ことを特徴とする請求項16に記載の構造。
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