JP5963449B2 - 光電変換装置の製造方法 - Google Patents

光電変換装置の製造方法 Download PDF

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Publication number
JP5963449B2
JP5963449B2 JP2012006554A JP2012006554A JP5963449B2 JP 5963449 B2 JP5963449 B2 JP 5963449B2 JP 2012006554 A JP2012006554 A JP 2012006554A JP 2012006554 A JP2012006554 A JP 2012006554A JP 5963449 B2 JP5963449 B2 JP 5963449B2
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Japan
Prior art keywords
region
layer
photoelectric conversion
semiconductor substrate
gate electrode
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Expired - Fee Related
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JP2012006554A
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English (en)
Japanese (ja)
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JP2013145853A5 (enExample
JP2013145853A (ja
Inventor
政次 板橋
政次 板橋
憲二 都甲
憲二 都甲
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2012006554A priority Critical patent/JP5963449B2/ja
Priority to US13/705,499 priority patent/US9202842B2/en
Publication of JP2013145853A publication Critical patent/JP2013145853A/ja
Publication of JP2013145853A5 publication Critical patent/JP2013145853A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

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  • Solid State Image Pick-Up Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2012006554A 2012-01-16 2012-01-16 光電変換装置の製造方法 Expired - Fee Related JP5963449B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012006554A JP5963449B2 (ja) 2012-01-16 2012-01-16 光電変換装置の製造方法
US13/705,499 US9202842B2 (en) 2012-01-16 2012-12-05 Method for manufacturing photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012006554A JP5963449B2 (ja) 2012-01-16 2012-01-16 光電変換装置の製造方法

Publications (3)

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JP2013145853A JP2013145853A (ja) 2013-07-25
JP2013145853A5 JP2013145853A5 (enExample) 2015-03-05
JP5963449B2 true JP5963449B2 (ja) 2016-08-03

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JP2012006554A Expired - Fee Related JP5963449B2 (ja) 2012-01-16 2012-01-16 光電変換装置の製造方法

Country Status (2)

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US (1) US9202842B2 (enExample)
JP (1) JP5963449B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015109342A (ja) 2013-12-04 2015-06-11 キヤノン株式会社 撮像装置の製造方法
US9608033B2 (en) 2014-05-12 2017-03-28 Canon Kabushiki Kaisha Solid-state image sensor, method of manufacturing the same, and camera
JP6700655B2 (ja) * 2014-10-30 2020-05-27 キヤノン株式会社 光電変換装置および光電変換装置の製造方法
WO2016080337A1 (ja) * 2014-11-17 2016-05-26 国立大学法人東北大学 光センサ及びその信号読み出し方法並びに固体撮像装置及びその信号読み出し方法
US10154222B2 (en) 2014-11-17 2018-12-11 Tohoku University Optical sensor, signal reading method therefor, solid-state imaging device, and signal reading method therefor
US9935140B2 (en) 2015-05-19 2018-04-03 Canon Kabushiki Kaisha Solid state imaging device, manufacturing method of solid state imaging device, and imaging system
EP3113224B1 (en) 2015-06-12 2020-07-08 Canon Kabushiki Kaisha Imaging apparatus, method of manufacturing the same, and camera
JP6861471B2 (ja) * 2015-06-12 2021-04-21 キヤノン株式会社 撮像装置およびその製造方法ならびにカメラ
JP6808481B2 (ja) 2016-12-27 2021-01-06 キヤノン株式会社 半導体装置、システム、および、半導体装置の製造方法
JP6656698B1 (ja) * 2019-05-23 2020-03-04 国立大学法人徳島大学 医療用マイクロ波給電システム、医療用受電回路、ショットキーバリアダイオード及び医療用マイクロ波給電方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6333205B1 (en) * 1999-08-16 2001-12-25 Micron Technology, Inc. CMOS imager with selectively silicided gates
JP4398917B2 (ja) 2000-03-28 2010-01-13 株式会社東芝 固体撮像装置及びその製造方法
JP3782297B2 (ja) 2000-03-28 2006-06-07 株式会社東芝 固体撮像装置及びその製造方法
US6448595B1 (en) * 2000-06-26 2002-09-10 Twin Han Technology Co., Ltd. Active photodiode CMOS image sensor structure
JP4025605B2 (ja) * 2002-08-30 2007-12-26 富士通株式会社 半導体装置及びその製造方法
KR100595899B1 (ko) * 2003-12-31 2006-06-30 동부일렉트로닉스 주식회사 이미지 센서 및 그 제조방법
JP2005260076A (ja) 2004-03-12 2005-09-22 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
KR100672713B1 (ko) 2004-06-09 2007-01-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조방법
JP2006191054A (ja) 2004-12-29 2006-07-20 Dongbuanam Semiconductor Inc Ｃｍｏｓイメージセンサの製造方法
US20080258188A1 (en) * 2007-04-23 2008-10-23 United Microelectronics Corp. Metal oxide semiconductor device and method of fabricating the same
JP5095287B2 (ja) 2007-07-18 2012-12-12 パナソニック株式会社 固体撮像素子及びその製造方法
JP2009283649A (ja) * 2008-05-22 2009-12-03 Panasonic Corp 固体撮像装置及びその製造方法
JP5558916B2 (ja) * 2009-06-26 2014-07-23 キヤノン株式会社 光電変換装置の製造方法

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US20130183786A1 (en) 2013-07-18
JP2013145853A (ja) 2013-07-25
US9202842B2 (en) 2015-12-01

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