JP5924941B2 - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

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JP5924941B2
JP5924941B2 JP2012001272A JP2012001272A JP5924941B2 JP 5924941 B2 JP5924941 B2 JP 5924941B2 JP 2012001272 A JP2012001272 A JP 2012001272A JP 2012001272 A JP2012001272 A JP 2012001272A JP 5924941 B2 JP5924941 B2 JP 5924941B2
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film
processing method
gas
electrode
hard mask
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JP2013143390A (ja
JP2013143390A5 (enExample
Inventor
泰清 森岡
泰清 森岡
淳 須山
淳 須山
藤田　大介
大介 藤田
正人 石丸
正人 石丸
直広 山本
直広 山本
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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JP2012001272A 2012-01-06 2012-01-06 プラズマ処理方法 Active JP5924941B2 (ja)

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JP2012001272A JP5924941B2 (ja) 2012-01-06 2012-01-06 プラズマ処理方法

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JP2013143390A JP2013143390A (ja) 2013-07-22
JP2013143390A5 JP2013143390A5 (enExample) 2014-11-06
JP5924941B2 true JP5924941B2 (ja) 2016-05-25

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10236186B2 (en) * 2014-08-05 2019-03-19 Tokyo Electron Limited Methods for dry hard mask removal on a microelectronic substrate
JP6935352B2 (ja) * 2015-07-03 2021-09-15 ウシオ電機株式会社 グリッド偏光素子
CN108963001A (zh) * 2018-07-02 2018-12-07 合肥工业大学 一种定位生长钙钛矿薄膜阵列的方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3122396B2 (ja) * 1997-09-16 2001-01-09 松下電子工業株式会社 膜のパターニング方法
JP2004241692A (ja) * 2003-02-07 2004-08-26 Oki Electric Ind Co Ltd 強誘電体メモリ素子の製造方法
JP2010080780A (ja) * 2008-09-26 2010-04-08 Fujitsu Microelectronics Ltd 半導体装置の製造方法及び容量素子の製造方法

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