JP5918122B2 - パターン形成方法、パターン形成装置、及びコンピュータ可読記憶媒体 - Google Patents

パターン形成方法、パターン形成装置、及びコンピュータ可読記憶媒体 Download PDF

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Publication number
JP5918122B2
JP5918122B2 JP2012285132A JP2012285132A JP5918122B2 JP 5918122 B2 JP5918122 B2 JP 5918122B2 JP 2012285132 A JP2012285132 A JP 2012285132A JP 2012285132 A JP2012285132 A JP 2012285132A JP 5918122 B2 JP5918122 B2 JP 5918122B2
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Japan
Prior art keywords
pattern forming
ultraviolet light
block copolymer
pmma
wafer
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JP2012285132A
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Japanese (ja)
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JP2013232621A5 (enExample
JP2013232621A (ja
Inventor
村松　誠
誠 村松
北野　高広
高広 北野
忠利 冨田
忠利 冨田
啓士 田内
啓士 田内
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2012285132A priority Critical patent/JP5918122B2/ja
Priority to PCT/JP2013/059264 priority patent/WO2013150955A1/ja
Priority to US14/389,437 priority patent/US9618849B2/en
Priority to KR1020147027564A priority patent/KR101857323B1/ko
Priority to TW102111688A priority patent/TWI538745B/zh
Publication of JP2013232621A publication Critical patent/JP2013232621A/ja
Publication of JP2013232621A5 publication Critical patent/JP2013232621A5/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0147—Film patterning
    • B81C2201/0149—Forming nanoscale microstructures using auto-arranging or self-assembling material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2012285132A 2012-04-06 2012-12-27 パターン形成方法、パターン形成装置、及びコンピュータ可読記憶媒体 Active JP5918122B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012285132A JP5918122B2 (ja) 2012-04-06 2012-12-27 パターン形成方法、パターン形成装置、及びコンピュータ可読記憶媒体
PCT/JP2013/059264 WO2013150955A1 (ja) 2012-04-06 2013-03-28 パターン形成方法、パターン形成装置、及びコンピュータ可読記憶媒体
US14/389,437 US9618849B2 (en) 2012-04-06 2013-03-28 Pattern forming method, pattern forming apparatus, and computer readable storage medium
KR1020147027564A KR101857323B1 (ko) 2012-04-06 2013-03-28 패턴 형성 방법, 패턴 형성 장치 및 컴퓨터 판독 가능 기억 매체
TW102111688A TWI538745B (zh) 2012-04-06 2013-04-01 圖案形成方法、圖案形成裝置及電腦可讀取記憶媒體

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012087106 2012-04-06
JP2012087106 2012-04-06
JP2012285132A JP5918122B2 (ja) 2012-04-06 2012-12-27 パターン形成方法、パターン形成装置、及びコンピュータ可読記憶媒体

Related Child Applications (1)

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JP2016077116A Division JP6177958B2 (ja) 2012-04-06 2016-04-07 パターン形成方法、パターン形成装置、及びコンピュータ可読記憶媒体

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JP2013232621A JP2013232621A (ja) 2013-11-14
JP2013232621A5 JP2013232621A5 (enExample) 2015-02-19
JP5918122B2 true JP5918122B2 (ja) 2016-05-18

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US (1) US9618849B2 (enExample)
JP (1) JP5918122B2 (enExample)
KR (1) KR101857323B1 (enExample)
TW (1) TWI538745B (enExample)
WO (1) WO2013150955A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10395942B2 (en) 2016-09-15 2019-08-27 SCREEN Holdings Co., Ltd. Etching device, substrate processing apparatus, etching method and substrate processing method
US10832925B2 (en) 2016-08-18 2020-11-10 SCREEN Holdings Co., Ltd. Thermal processing device, substrate processing apparatus, thermal processing method and substrate processing method
US11107698B2 (en) 2017-02-14 2021-08-31 SCREEN Holdings Co., Ltd. Substrate treating method

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140273290A1 (en) * 2013-03-15 2014-09-18 Tokyo Electron Limited Solvent anneal processing for directed-self assembly applications
JP5783472B2 (ja) * 2013-06-10 2015-09-24 ウシオ電機株式会社 アッシング装置
TWI562239B (en) * 2013-11-07 2016-12-11 Tokyo Electron Ltd Pattern forming method and heating device
US9859118B2 (en) * 2013-11-25 2018-01-02 Tokyo Electron Limited Pattern forming method and heating apparatus
JP6235974B2 (ja) 2014-09-24 2017-11-22 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
JP6314779B2 (ja) * 2014-10-01 2018-04-25 東京エレクトロン株式会社 液処理方法、記憶媒体及び液処理装置
JP6495707B2 (ja) 2015-03-25 2019-04-03 株式会社Ｓｃｒｅｅｎホールディングス 露光装置および基板処理装置
JP6543064B2 (ja) * 2015-03-25 2019-07-10 株式会社Ｓｃｒｅｅｎホールディングス 露光装置、基板処理装置、基板の露光方法および基板処理方法
TWI723052B (zh) 2015-10-23 2021-04-01 日商東京威力科創股份有限公司 基板處理方法、程式及電腦記憶媒體
JP6655418B2 (ja) 2016-02-17 2020-02-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JPWO2017221683A1 (ja) * 2016-06-24 2019-04-04 東京エレクトロン株式会社 基板処理方法、読み取り可能なコンピュータ記憶媒体及び基板処理システム
JP6683578B2 (ja) 2016-09-23 2020-04-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
EP3528045A1 (en) 2018-02-16 2019-08-21 IMEC vzw Method for forming a cross-linked layer
CN109569970A (zh) * 2018-12-26 2019-04-05 江苏荣成环保科技股份有限公司 一种单面瓦楞机胶桶加热保温装置

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JP3940546B2 (ja) * 1999-06-07 2007-07-04 株式会社東芝 パターン形成方法およびパターン形成材料
JP4127682B2 (ja) 1999-06-07 2008-07-30 株式会社東芝 パターン形成方法
JP2001113163A (ja) * 1999-10-20 2001-04-24 Hoya Schott Kk 紫外光照射装置及び方法
JP2005142185A (ja) * 2003-11-04 2005-06-02 Canon Inc 露光装置及びその環境制御方法
US20060210929A1 (en) * 2005-03-15 2006-09-21 Canon Kabushiki Kaisha Photosensitive composition and forming process of structured material using the composition
JP4665720B2 (ja) 2005-11-01 2011-04-06 株式会社日立製作所 パターン基板，パターン基板の製造方法、微細金型および磁気記録用パターン媒体
JP4803591B2 (ja) 2006-06-01 2011-10-26 東京エレクトロン株式会社 溶剤供給方法
JP5112562B2 (ja) * 2009-09-29 2013-01-09 株式会社東芝 パターン形成方法
JP5300799B2 (ja) * 2010-07-28 2013-09-25 株式会社東芝 パターン形成方法及びポリマーアロイ下地材料
JP5484373B2 (ja) * 2011-02-14 2014-05-07 東京エレクトロン株式会社 パターン形成方法
US9060415B2 (en) 2011-02-15 2015-06-16 Riken Method for producing substrate having surface nanostructure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10832925B2 (en) 2016-08-18 2020-11-10 SCREEN Holdings Co., Ltd. Thermal processing device, substrate processing apparatus, thermal processing method and substrate processing method
US10395942B2 (en) 2016-09-15 2019-08-27 SCREEN Holdings Co., Ltd. Etching device, substrate processing apparatus, etching method and substrate processing method
US11107698B2 (en) 2017-02-14 2021-08-31 SCREEN Holdings Co., Ltd. Substrate treating method

Also Published As

Publication number Publication date
KR20150007279A (ko) 2015-01-20
US9618849B2 (en) 2017-04-11
TW201410336A (zh) 2014-03-16
US20150062545A1 (en) 2015-03-05
WO2013150955A1 (ja) 2013-10-10
TWI538745B (zh) 2016-06-21
JP2013232621A (ja) 2013-11-14
KR101857323B1 (ko) 2018-05-11

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