JP5915225B2 - 配線基板及びそれを用いた半導体装置 - Google Patents
配線基板及びそれを用いた半導体装置 Download PDFInfo
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- JP5915225B2 JP5915225B2 JP2012027031A JP2012027031A JP5915225B2 JP 5915225 B2 JP5915225 B2 JP 5915225B2 JP 2012027031 A JP2012027031 A JP 2012027031A JP 2012027031 A JP2012027031 A JP 2012027031A JP 5915225 B2 JP5915225 B2 JP 5915225B2
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- wiring board
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- sealing resin
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- 239000004065 semiconductor Substances 0.000 title claims description 56
- 239000000758 substrate Substances 0.000 title claims description 18
- 229920005989 resin Polymers 0.000 claims description 46
- 239000011347 resin Substances 0.000 claims description 46
- 229910000679 solder Inorganic materials 0.000 claims description 43
- 238000007789 sealing Methods 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 24
- 238000007747 plating Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
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- 229910052802 copper Inorganic materials 0.000 description 3
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- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910020836 Sn-Ag Inorganic materials 0.000 description 2
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- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000003463 adsorbent Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
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- 239000004020 conductor Substances 0.000 description 2
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- 239000004593 Epoxy Substances 0.000 description 1
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- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
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- 229910020816 Sn Pb Inorganic materials 0.000 description 1
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- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- AHHWIHXENZJRFG-UHFFFAOYSA-N oxetane Chemical compound C1COC1 AHHWIHXENZJRFG-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920013637 polyphenylene oxide polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
Landscapes
- Wire Bonding (AREA)
Description
て取り込む性質を有する分子性吸着剤を封止樹脂21中に分散する技術も開示されている(特許文献2)。
図1に示すように、本発明に係る配線基板1は、少なくとも片側の最表層に、ソルダーレジスト2が形成されている。しかしながら、ソルダーレジスト2は、半導体チップ20との接続用パッド3(以下、単にパッドとも記す。)が規則的に敷設された領域(図では白い枠状の部分)を被覆してはおらず、複数のパッド3を内部に含む開口領域5となっている。この開口領域5は、一般には矩形を組み合わせた対称性の高い形状であって、外周の大きさは後工程で搭載される半導体チップ20の大きさと同程度である。
キシ樹脂とガラス繊維等を組み合わせた材料、およびガラス、セラミックス等の無機材料を用いることができる。
2…ソルダーレジスト
3…接続用パッド
4…絶縁部
5…本発明のソルダーレジスト開口領域(開口部)
10…従来の配線基板
11…従来のソルダーレジスト開口パターン
20…半導体チップ
21…封止樹脂(アンダーフィル)
22…突起電極
23…ボイド
30…加熱・加圧ツール
Claims (2)
- 裏面にアレイ状の接続用パッドを備え、表面にフリップチップ接続用パッドを備え、且つ表面がソルダーレジスト層に被覆された配線線基板において、フリップチップ接続用パッドが敷設された領域と前記領域から配線基板外周に向って伸在する細帯状領域に、ソルダーレジスト層の開口領域を有する配線基板であって、前記配線基板に、半導体チップがフリップチップ方式にて搭載された半導体装置において、配線基板と半導体チップとの隙間には封止樹脂が充填され、前記細帯状領域に封止樹脂の非被覆領域を有する半導体装置。
- 前記細帯状のソルダーレジスト層開口領域は、配線基板の対角線方向に伸在していることを特徴とする請求項1に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012027031A JP5915225B2 (ja) | 2012-02-10 | 2012-02-10 | 配線基板及びそれを用いた半導体装置 |
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---|---|---|---|
JP2012027031A JP5915225B2 (ja) | 2012-02-10 | 2012-02-10 | 配線基板及びそれを用いた半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2013165148A JP2013165148A (ja) | 2013-08-22 |
JP5915225B2 true JP5915225B2 (ja) | 2016-05-11 |
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JP2012027031A Active JP5915225B2 (ja) | 2012-02-10 | 2012-02-10 | 配線基板及びそれを用いた半導体装置 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015070187A (ja) * | 2013-09-30 | 2015-04-13 | 凸版印刷株式会社 | 半導体装置及び半導体装置の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3115828U (ja) * | 2005-08-16 | 2005-11-17 | ハリマ化成株式会社 | 配線基板 |
JP2009289868A (ja) * | 2008-05-28 | 2009-12-10 | Kyocer Slc Technologies Corp | 配線基板およびその製造方法 |
JP5015065B2 (ja) * | 2008-05-28 | 2012-08-29 | 新光電気工業株式会社 | 配線基板 |
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