JP5911767B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP5911767B2 JP5911767B2 JP2012157885A JP2012157885A JP5911767B2 JP 5911767 B2 JP5911767 B2 JP 5911767B2 JP 2012157885 A JP2012157885 A JP 2012157885A JP 2012157885 A JP2012157885 A JP 2012157885A JP 5911767 B2 JP5911767 B2 JP 5911767B2
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- 238000003384 imaging method Methods 0.000 title claims description 35
- 238000009792 diffusion process Methods 0.000 claims description 147
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 24
- 238000006243 chemical reaction Methods 0.000 claims description 18
- 230000003321 amplification Effects 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 32
- 101100041125 Arabidopsis thaliana RST1 gene Proteins 0.000 description 17
- 101100443250 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) DIG1 gene Proteins 0.000 description 17
- 101710170230 Antimicrobial peptide 1 Proteins 0.000 description 15
- 101710170231 Antimicrobial peptide 2 Proteins 0.000 description 12
- 101100443251 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) DIG2 gene Proteins 0.000 description 12
- 101100041128 Schizosaccharomyces pombe (strain 972 / ATCC 24843) rst2 gene Proteins 0.000 description 12
- HODRFAVLXIFVTR-RKDXNWHRSA-N tevenel Chemical compound NS(=O)(=O)C1=CC=C([C@@H](O)[C@@H](CO)NC(=O)C(Cl)Cl)C=C1 HODRFAVLXIFVTR-RKDXNWHRSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 101000743485 Homo sapiens V-set and immunoglobulin domain-containing protein 1 Proteins 0.000 description 3
- 101000743490 Homo sapiens V-set and immunoglobulin domain-containing protein 2 Proteins 0.000 description 3
- 102100038293 V-set and immunoglobulin domain-containing protein 1 Human genes 0.000 description 3
- 102100038295 V-set and immunoglobulin domain-containing protein 2 Human genes 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
第1実施形態の固体撮像装置について説明する。
前述した第1実施形態ではリセットトランジスタのソース領域、チャネル領域、及びドレイン領域をL字型に形成したが、第2実施形態では、リセットトランジスタのソース領域、チャネル領域、及びドレイン領域をT字型に形成する例を説明する。
前述した第2実施形態ではリセットトランジスタのアクティブ領域をT字型に形成したが、第3実施形態では、リセットトランジスタのアクティブ領域を十字型に形成する例を説明する。
Claims (1)
- 半導体基板に第1方向に配列され、入射光を信号電荷に変換する第1,第2の光電変換部と、
前記半導体基板に形成され、前記第1,第2の光電変換部により変換された前記信号電荷をそれぞれ転送する第1,第2の転送トランジスタと、
前記半導体基板に形成され、前記第1,第2の転送トランジスタにより転送された前記信号電荷を蓄積する第1の浮遊拡散層と、
前記半導体基板に前記第1方向に配列され、入射光を信号電荷に変換する第3,第4の光電変換部と、
前記半導体基板に形成され、前記第3,第4の光電変換部により変換された前記信号電荷をそれぞれ転送する第3,第4の転送トランジスタと、
前記半導体基板に形成され、前記第3,第4の転送トランジスタにより転送された前記信号電荷を蓄積する第2の浮遊拡散層と、
前記半導体基板に形成され、前記第1,第2の浮遊拡散層に蓄積された前記信号電荷をリセットするリセットトランジスタと、
前記半導体基板に形成され、前記リセットトランジスタに対して前記第1方向に配置され、前記第1,第2の浮遊拡散層に蓄積された前記信号電荷をそれぞれ増幅する第1,第2の増幅トランジスタとを具備し、
前記第1,第2の光電変換部と、前記第3,第4の光電変換部とは、前記リセットトランジスタを挟んで前記第1方向と交差する第2方向に配置され、
前記リセットトランジスタは、前記第1の浮遊拡散層と共有する第1のソース領域と、前記第2の浮遊拡散層と共有する第2のソース領域と、前記第1のソース領域と前記第2のソース領域間のゲートと、ドレイン領域と、前記ゲート下に配置されたチャネル領域とを有し、
前記リセットトランジスタの前記第1のソース領域と、前記第2のソース領域とは前記ゲートを挟んで前記第2方向に配置され、前記ドレイン領域は前記ゲートに対して前記第1方向に配置され、
前記リセットトランジスタの前記第1のソース領域、前記チャネル領域、前記第2のソース領域と、前記ドレイン領域とは、前記半導体基板にT字型にレイアウトされていることを特徴とする固体撮像装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012157885A JP5911767B2 (ja) | 2012-07-13 | 2012-07-13 | 固体撮像装置 |
US13/760,251 US8952476B2 (en) | 2012-07-13 | 2013-02-06 | Solid-state image pickup device |
KR1020130022822A KR101455517B1 (ko) | 2012-07-13 | 2013-03-04 | 고체 촬상 장치 |
CN201310070315.9A CN103545326B (zh) | 2012-07-13 | 2013-03-06 | 固体拍摄装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012157885A JP5911767B2 (ja) | 2012-07-13 | 2012-07-13 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014022463A JP2014022463A (ja) | 2014-02-03 |
JP5911767B2 true JP5911767B2 (ja) | 2016-04-27 |
Family
ID=49913240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012157885A Expired - Fee Related JP5911767B2 (ja) | 2012-07-13 | 2012-07-13 | 固体撮像装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8952476B2 (ja) |
JP (1) | JP5911767B2 (ja) |
KR (1) | KR101455517B1 (ja) |
CN (1) | CN103545326B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5911767B2 (ja) * | 2012-07-13 | 2016-04-27 | 株式会社東芝 | 固体撮像装置 |
JP6305515B2 (ja) * | 2013-04-10 | 2018-04-04 | ショット グラス テクノロジーズ (スゾウ) カンパニー リミテッドSchott Glass Technologies (Suzhou) Co., Ltd. | フレキシブルガラス/金属箔複合物品およびそれらの製造方法 |
JP2017204528A (ja) * | 2016-05-10 | 2017-11-16 | セイコーエプソン株式会社 | 固体撮像装置 |
CN116057713A (zh) * | 2020-08-06 | 2023-05-02 | 索尼半导体解决方案公司 | 半导体装置和电子设备 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5526680A (en) * | 1978-08-16 | 1980-02-26 | Mitsubishi Electric Corp | Semiconductor integrated circuit |
JPS63250152A (ja) * | 1987-04-07 | 1988-10-18 | Nec Corp | 半導体集積回路のレイアウト方法 |
JP4069918B2 (ja) * | 2004-09-27 | 2008-04-02 | セイコーエプソン株式会社 | 固体撮像装置 |
KR100683392B1 (ko) | 2005-04-29 | 2007-02-15 | 매그나칩 반도체 유한회사 | 시모스 이미지센서 |
JP4844032B2 (ja) | 2005-07-21 | 2011-12-21 | 株式会社ニコン | 撮像装置 |
JP4984316B2 (ja) * | 2005-08-18 | 2012-07-25 | セイコーエプソン株式会社 | 半導体装置、電気光学装置及び電子機器 |
KR20070030659A (ko) * | 2005-09-13 | 2007-03-16 | 마쯔시다덴기산교 가부시키가이샤 | 고체 촬상 장치 |
JP2008177306A (ja) | 2007-01-17 | 2008-07-31 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
JP5157783B2 (ja) * | 2008-09-25 | 2013-03-06 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
JP4735702B2 (ja) * | 2008-10-22 | 2011-07-27 | ソニー株式会社 | 固体撮像装置、固体撮像装置の駆動方法および撮像装置 |
TWI433307B (zh) * | 2008-10-22 | 2014-04-01 | Sony Corp | 固態影像感測器、其驅動方法、成像裝置及電子器件 |
JP5029624B2 (ja) * | 2009-01-15 | 2012-09-19 | ソニー株式会社 | 固体撮像装置及び電子機器 |
JP2010206174A (ja) * | 2009-02-06 | 2010-09-16 | Canon Inc | 光電変換装置およびその製造方法ならびにカメラ |
JP2011204916A (ja) | 2010-03-25 | 2011-10-13 | Toshiba Corp | 固体撮像装置およびその製造方法 |
EP2571059A1 (en) * | 2010-05-10 | 2013-03-20 | Sharp Kabushiki Kaisha | Semiconductor device, active matrix substrate, and display device |
JP2011249371A (ja) | 2010-05-21 | 2011-12-08 | Sony Corp | 固体撮像素子及びその製造方法、撮像装置 |
JP5377549B2 (ja) | 2011-03-03 | 2013-12-25 | 株式会社東芝 | 固体撮像装置 |
CN103488012B (zh) * | 2012-06-08 | 2016-02-17 | 瀚宇彩晶股份有限公司 | 像素结构、像素结构的制作方法以及有源元件阵列基板 |
JP5911767B2 (ja) * | 2012-07-13 | 2016-04-27 | 株式会社東芝 | 固体撮像装置 |
-
2012
- 2012-07-13 JP JP2012157885A patent/JP5911767B2/ja not_active Expired - Fee Related
-
2013
- 2013-02-06 US US13/760,251 patent/US8952476B2/en not_active Expired - Fee Related
- 2013-03-04 KR KR1020130022822A patent/KR101455517B1/ko active IP Right Grant
- 2013-03-06 CN CN201310070315.9A patent/CN103545326B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2014022463A (ja) | 2014-02-03 |
KR20140009009A (ko) | 2014-01-22 |
US20140015024A1 (en) | 2014-01-16 |
KR101455517B1 (ko) | 2014-10-27 |
CN103545326B (zh) | 2016-04-27 |
US8952476B2 (en) | 2015-02-10 |
CN103545326A (zh) | 2014-01-29 |
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