JP5877121B2 - 半導体集積回路 - Google Patents

半導体集積回路 Download PDF

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Publication number
JP5877121B2
JP5877121B2 JP2012113557A JP2012113557A JP5877121B2 JP 5877121 B2 JP5877121 B2 JP 5877121B2 JP 2012113557 A JP2012113557 A JP 2012113557A JP 2012113557 A JP2012113557 A JP 2012113557A JP 5877121 B2 JP5877121 B2 JP 5877121B2
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JP
Japan
Prior art keywords
transistor
drain
source
oxide semiconductor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012113557A
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English (en)
Japanese (ja)
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JP2013009325A (ja
JP2013009325A5 (enExample
Inventor
修平 長塚
修平 長塚
裕人 八窪
裕人 八窪
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2012113557A priority Critical patent/JP5877121B2/ja
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Publication of JP2013009325A5 publication Critical patent/JP2013009325A5/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/22—Subject matter not provided for in other groups of this subclass including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/0063—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is an EEPROM element, e.g. a floating gate or MNOS transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
JP2012113557A 2011-05-20 2012-05-17 半導体集積回路 Expired - Fee Related JP5877121B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012113557A JP5877121B2 (ja) 2011-05-20 2012-05-17 半導体集積回路

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011113651 2011-05-20
JP2011113651 2011-05-20
JP2012113557A JP5877121B2 (ja) 2011-05-20 2012-05-17 半導体集積回路

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016011401A Division JP6076516B2 (ja) 2011-05-20 2016-01-25 半導体集積回路

Publications (3)

Publication Number Publication Date
JP2013009325A JP2013009325A (ja) 2013-01-10
JP2013009325A5 JP2013009325A5 (enExample) 2015-05-28
JP5877121B2 true JP5877121B2 (ja) 2016-03-02

Family

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Family Applications (2)

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JP2012113557A Expired - Fee Related JP5877121B2 (ja) 2011-05-20 2012-05-17 半導体集積回路
JP2016011401A Expired - Fee Related JP6076516B2 (ja) 2011-05-20 2016-01-25 半導体集積回路

Family Applications After (1)

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JP2016011401A Expired - Fee Related JP6076516B2 (ja) 2011-05-20 2016-01-25 半導体集積回路

Country Status (4)

Country Link
US (1) US9048105B2 (enExample)
JP (2) JP5877121B2 (enExample)
KR (1) KR101955036B1 (enExample)
TW (1) TWI559683B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6030334B2 (ja) * 2011-05-20 2016-11-24 株式会社半導体エネルギー研究所 記憶装置
JP6099368B2 (ja) 2011-11-25 2017-03-22 株式会社半導体エネルギー研究所 記憶装置
JP6108960B2 (ja) 2012-06-01 2017-04-05 株式会社半導体エネルギー研究所 半導体装置、処理装置
JP2015165226A (ja) * 2014-02-07 2015-09-17 株式会社半導体エネルギー研究所 装置
US9716100B2 (en) * 2014-03-14 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and electronic device
JP6906978B2 (ja) 2016-02-25 2021-07-21 株式会社半導体エネルギー研究所 半導体装置、半導体ウェハ、および電子機器
JP7222657B2 (ja) * 2018-10-25 2023-02-15 株式会社半導体エネルギー研究所 二次電池の残量計測回路
CN113474897A (zh) * 2019-03-12 2021-10-01 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
JP7528072B2 (ja) * 2019-05-31 2024-08-05 株式会社半導体エネルギー研究所 半導体装置

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US9048105B2 (en) 2015-06-02
KR101955036B1 (ko) 2019-03-06
JP2013009325A (ja) 2013-01-10
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US20120292680A1 (en) 2012-11-22
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