JP5876682B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5876682B2
JP5876682B2 JP2011169779A JP2011169779A JP5876682B2 JP 5876682 B2 JP5876682 B2 JP 5876682B2 JP 2011169779 A JP2011169779 A JP 2011169779A JP 2011169779 A JP2011169779 A JP 2011169779A JP 5876682 B2 JP5876682 B2 JP 5876682B2
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JP
Japan
Prior art keywords
drain electrode
source electrode
oxide semiconductor
semiconductor layer
layer
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Expired - Fee Related
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JP2011169779A
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English (en)
Japanese (ja)
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JP2012054544A5 (enExample
JP2012054544A (ja
Inventor
耕生 野田
耕生 野田
佑太 遠藤
佑太 遠藤
俊成 佐々木
俊成 佐々木
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2011169779A priority Critical patent/JP5876682B2/ja
Publication of JP2012054544A publication Critical patent/JP2012054544A/ja
Publication of JP2012054544A5 publication Critical patent/JP2012054544A5/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2011169779A 2010-08-06 2011-08-03 半導体装置の作製方法 Expired - Fee Related JP5876682B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011169779A JP5876682B2 (ja) 2010-08-06 2011-08-03 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010177037 2010-08-06
JP2010177037 2010-08-06
JP2011169779A JP5876682B2 (ja) 2010-08-06 2011-08-03 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2012054544A JP2012054544A (ja) 2012-03-15
JP2012054544A5 JP2012054544A5 (enExample) 2014-07-24
JP5876682B2 true JP5876682B2 (ja) 2016-03-02

Family

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Family Applications (1)

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JP2011169779A Expired - Fee Related JP5876682B2 (ja) 2010-08-06 2011-08-03 半導体装置の作製方法

Country Status (4)

Country Link
US (2) US20120032172A1 (enExample)
JP (1) JP5876682B2 (enExample)
KR (1) KR101991690B1 (enExample)
TW (4) TWI595670B (enExample)

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US8792284B2 (en) 2010-08-06 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
US10079053B2 (en) 2011-04-22 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Memory element and memory device
US9177872B2 (en) 2011-09-16 2015-11-03 Micron Technology, Inc. Memory cells, semiconductor devices, systems including such cells, and methods of fabrication
CN103843145B (zh) * 2011-09-29 2017-03-29 株式会社半导体能源研究所 半导体装置
JP2013232567A (ja) * 2012-04-30 2013-11-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US9048323B2 (en) 2012-04-30 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI596778B (zh) * 2012-06-29 2017-08-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
JP6306832B2 (ja) * 2012-07-06 2018-04-04 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
JP6293229B2 (ja) * 2012-10-17 2018-03-14 株式会社半導体エネルギー研究所 半導体装置
KR102220279B1 (ko) * 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
JP6355374B2 (ja) * 2013-03-22 2018-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN103886813B (zh) * 2014-02-14 2016-07-06 上海和辉光电有限公司 双面显示器、双面显示器的控制装置及其制造方法
TWI672804B (zh) 2014-05-23 2019-09-21 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
CN104134699A (zh) * 2014-07-15 2014-11-05 京东方科技集团股份有限公司 一种薄膜晶体管、阵列基板及显示装置
JP6393936B2 (ja) * 2014-09-05 2018-09-26 Dic株式会社 薄膜トランジスタ、トランジスタアレイ、薄膜トランジスタの製造方法及びトランジスタアレイの製造方法
JP6293818B2 (ja) * 2016-05-31 2018-03-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN112530978B (zh) * 2020-12-01 2024-02-13 京东方科技集团股份有限公司 开关器件结构及其制备方法、薄膜晶体管膜层、显示面板

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US7211825B2 (en) * 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP5126729B2 (ja) 2004-11-10 2013-01-23 キヤノン株式会社 画像表示装置
KR20070092455A (ko) * 2006-03-10 2007-09-13 삼성전자주식회사 표시 장치 및 그 제조 방법
JP4609797B2 (ja) * 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
DE102006039764A1 (de) * 2006-08-24 2008-02-28 Wabco Gmbh Nutzfahrzeuganhänger mit einem elektronisch gesteuerten Bremssystem
KR20080047085A (ko) * 2006-11-24 2008-05-28 엘지디스플레이 주식회사 액정표시장치용 어레이 기판 및 그 제조방법
KR20080052107A (ko) * 2006-12-07 2008-06-11 엘지전자 주식회사 산화물 반도체층을 구비한 박막 트랜지스터
KR101410926B1 (ko) * 2007-02-16 2014-06-24 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
KR101375831B1 (ko) * 2007-12-03 2014-04-02 삼성전자주식회사 산화물 반도체 박막 트랜지스터를 이용한 디스플레이 장치
JP5584960B2 (ja) * 2008-07-03 2014-09-10 ソニー株式会社 薄膜トランジスタおよび表示装置
JP2010045159A (ja) * 2008-08-12 2010-02-25 Fujifilm Corp 薄膜電界効果型トランジスタ及びその製造方法
US7989321B2 (en) * 2008-08-21 2011-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device gate structure including a gettering layer
JP5372435B2 (ja) * 2008-09-02 2013-12-18 株式会社ジャパンディスプレイ 表示装置
JP2010062233A (ja) * 2008-09-02 2010-03-18 Hitachi Displays Ltd 表示装置
JP5484853B2 (ja) * 2008-10-10 2014-05-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN101740631B (zh) * 2008-11-07 2014-07-16 株式会社半导体能源研究所 半导体装置及该半导体装置的制造方法
JP2010135771A (ja) 2008-11-07 2010-06-17 Semiconductor Energy Lab Co Ltd 半導体装置及び当該半導体装置の作製方法
US8865516B2 (en) * 2009-06-29 2014-10-21 Sharp Kabushiki Kaisha Oxide semiconductor, thin film transistor array substrate and production method thereof, and display device
KR101093424B1 (ko) * 2009-11-10 2011-12-14 삼성모바일디스플레이주식회사 유기전계발광 표시 장치 및 그의 제조 방법
KR101511076B1 (ko) * 2009-12-08 2015-04-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP5727204B2 (ja) * 2009-12-11 2015-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法

Also Published As

Publication number Publication date
TWI663639B (zh) 2019-06-21
KR20120024397A (ko) 2012-03-14
JP2012054544A (ja) 2012-03-15
KR101991690B1 (ko) 2019-06-21
TW201733133A (zh) 2017-09-16
US20120032172A1 (en) 2012-02-09
TWI595670B (zh) 2017-08-11
TW201639177A (zh) 2016-11-01
TWI553875B (zh) 2016-10-11
US20170278976A1 (en) 2017-09-28
TW201909257A (zh) 2019-03-01
TW201225303A (en) 2012-06-16

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