JP6063115B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP6063115B2 JP6063115B2 JP2011230247A JP2011230247A JP6063115B2 JP 6063115 B2 JP6063115 B2 JP 6063115B2 JP 2011230247 A JP2011230247 A JP 2011230247A JP 2011230247 A JP2011230247 A JP 2011230247A JP 6063115 B2 JP6063115 B2 JP 6063115B2
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- film
- oxide
- insulating film
- oxide semiconductor
- gate
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Description
本実施の形態では、半導体装置及び半導体装置の作製方法の一形態を、図1乃至図3を用いて説明する。
(a―A)2+(b―B)2+(c―C)2≦r2
を満たすことをいい、rは、例えば、0.05とすればよい。他の酸化物でも同様である。
本実施の形態では、図4(A)乃至図4(E)を用いて、図2(A)に示すトランジスタ152の作製工程の一例について説明する。
本実施の形態では、図5(A)乃至図5(E)を用いて、図2(B)に示すトランジスタ153の作製工程の一例について説明する。
図6(A)乃至図6(E)に本実施の形態の表示装置の作製工程断面を示す。本実施の形態に示すトランジスタは、ゲート電極が基板側に位置するボトムゲート型で、かつ、ソース電極とドレイン電極がともに半導体膜の上面にコンタクトするトップコンタクト型である。
図7(A)乃至図7(C)に本実施の形態の表示装置の作製工程断面を示す。本実施の形態に示すトランジスタは、ボトムゲート型である。また、ソース電極とドレイン電極はともに半導体膜の下面にコンタクトするボトムコンタクト型である。
本発明の一態様である半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビまたはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラなどのカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。上記実施の形態で説明した半導体装置を具備する電子機器の例について説明する。
102 絶縁膜
106 酸化物半導体膜
108a ソース電極
108b ドレイン電極
112 ゲート絶縁膜
114 第1のゲート膜
115 第2のゲート膜
122a ソース領域
122b ドレイン領域
124 保護絶縁膜
126 チャネル領域
151 トランジスタ
152 トランジスタ
153 トランジスタ
200 基板
206 酸化物半導体膜
206a 酸化物半導体膜
207a N型酸化物半導体膜
207b N型酸化物半導体膜
208a ソース電極
208b ドレイン電極
209 第1の絶縁物
210 第2の絶縁物
211 表示用電極
212 ゲート絶縁膜
214 第1のゲート膜
214a 化合物導電体膜
215 第2のゲート膜
215a 導電膜
301 本体
302 筐体
303 表示部
304 キーボード
311 本体
312 スタイラス
313 表示部
314 操作ボタン
315 外部インターフェイス
320 電子書籍
321 筐体
322 筐体
323 表示部
324 表示部
325 軸部
326 電源
327 操作キー
328 スピーカー
330 筐体
331 筐体
332 表示パネル
333 スピーカー
334 マイクロフォン
335 操作キー
336 ポインティングデバイス
337 カメラ用レンズ
338 外部接続端子
340 太陽電池セル
341 外部メモリスロット
351 本体
353 接眼部
354 操作スイッチ
355 表示部(B)
356 バッテリー
357 表示部(A)
360 テレビジョン装置
361 筐体
363 表示部
365 スタンド
Claims (5)
- 基板上に、インジウムと窒素とを有し、バンドギャップが2.8電子ボルト未満である化合物導電体の膜を形成する工程と、
前記化合物導電体の膜上に、第1の絶縁膜を形成する工程と、
前記第1の絶縁膜上に、インジウムを有する酸化物半導体膜を形成する工程と、
前記酸化物半導体膜を形成後、第1の熱処理を行う工程と、
前記酸化物半導体膜の上面の一部と接する領域を有する第2の絶縁膜を形成する工程と、
前記第2の絶縁膜を形成後、第2の熱処理を行う工程と、を有し、
前記第1の絶縁膜は、酸化シリコン、窒化シリコン、酸化窒化シリコン、窒化酸化シリコン、酸化アルミニウム、窒化アルミニウム、又は酸化ハフニウムを有し、
前記第2の絶縁膜は、酸化シリコン、酸化窒化シリコン、酸化アルミニウム、又は酸化窒化アルミニウムを有し、
前記第1の熱処理において、前記第1の絶縁膜から酸素が放出されて前記酸化物半導体膜に供給され、
前記酸素の放出量は、1×10 18 atoms/cm 3 以上である半導体装置の作製方法。 - 基板上に第1の絶縁膜を形成する工程と、
前記第1の絶縁膜上に、インジウムを有する酸化物半導体膜を形成する工程と、
前記酸化物半導体膜を形成後、第1の熱処理を行う工程と、
前記第1の熱処理後、前記酸化物半導体膜上に第2の絶縁膜を形成する工程と、
前記第2の絶縁膜を形成後、第2の熱処理を行う工程と、
前記第2の熱処理後、前記第2の絶縁膜上に、インジウムと窒素とを有し、バンドギャップが2.8電子ボルト未満である化合物導電体の膜を形成する工程と、を有し、
前記第1の絶縁膜は、酸化シリコン、窒化シリコン、酸化窒化シリコン、窒化酸化シリコン、酸化アルミニウム、窒化アルミニウムを有し、
前記第2の絶縁膜は、酸化シリコン、窒化シリコン、酸化窒化シリコン、窒化酸化シリコン、酸化アルミニウム、窒化アルミニウム、又は酸化ハフニウムを有し、
前記第1の熱処理において、前記第1の絶縁膜から酸素が放出されて前記酸化物半導体膜に供給され、
前記酸素の放出量は、1×10 18 atoms/cm 3 以上である半導体装置の作製方法。 - 請求項2において、
前記第2の熱処理において、前記第2の絶縁膜から酸素が放出されて前記酸化物半導体膜へ供給され、
前記酸素の放出量は、1×1018atoms/cm3以上である半導体装置の作製方法。 - 請求項1乃至3のいずれか一において、
前記化合物導電体の膜は、窒素を含む雰囲気でスパッタリング法により形成されることを特徴とする半導体装置の作製方法。 - 請求項1乃至4のいずれか一において、
前記化合物導電体の膜は、酸素濃度が5%以下の雰囲気でスパッタリング法により形成されることを特徴とする半導体装置の作製方法。
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