JP2012054544A5 - - Google Patents
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- Publication number
- JP2012054544A5 JP2012054544A5 JP2011169779A JP2011169779A JP2012054544A5 JP 2012054544 A5 JP2012054544 A5 JP 2012054544A5 JP 2011169779 A JP2011169779 A JP 2011169779A JP 2011169779 A JP2011169779 A JP 2011169779A JP 2012054544 A5 JP2012054544 A5 JP 2012054544A5
- Authority
- JP
- Japan
- Prior art keywords
- drain electrode
- source electrode
- electrode
- semiconductor layer
- oxide semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 10
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011169779A JP5876682B2 (ja) | 2010-08-06 | 2011-08-03 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010177037 | 2010-08-06 | ||
| JP2010177037 | 2010-08-06 | ||
| JP2011169779A JP5876682B2 (ja) | 2010-08-06 | 2011-08-03 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012054544A JP2012054544A (ja) | 2012-03-15 |
| JP2012054544A5 true JP2012054544A5 (enExample) | 2014-07-24 |
| JP5876682B2 JP5876682B2 (ja) | 2016-03-02 |
Family
ID=45555464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011169779A Expired - Fee Related JP5876682B2 (ja) | 2010-08-06 | 2011-08-03 | 半導体装置の作製方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US20120032172A1 (enExample) |
| JP (1) | JP5876682B2 (enExample) |
| KR (1) | KR101991690B1 (enExample) |
| TW (4) | TWI595670B (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8792284B2 (en) | 2010-08-06 | 2014-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor memory device |
| US10079053B2 (en) | 2011-04-22 | 2018-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Memory element and memory device |
| US9177872B2 (en) | 2011-09-16 | 2015-11-03 | Micron Technology, Inc. | Memory cells, semiconductor devices, systems including such cells, and methods of fabrication |
| CN103843145B (zh) * | 2011-09-29 | 2017-03-29 | 株式会社半导体能源研究所 | 半导体装置 |
| JP2013232567A (ja) * | 2012-04-30 | 2013-11-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US9048323B2 (en) | 2012-04-30 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI596778B (zh) * | 2012-06-29 | 2017-08-21 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| JP6306832B2 (ja) * | 2012-07-06 | 2018-04-04 | 株式会社半導体エネルギー研究所 | 半導体装置および半導体装置の作製方法 |
| JP6293229B2 (ja) * | 2012-10-17 | 2018-03-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102220279B1 (ko) * | 2012-10-19 | 2021-02-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법 |
| JP6355374B2 (ja) * | 2013-03-22 | 2018-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN103886813B (zh) * | 2014-02-14 | 2016-07-06 | 上海和辉光电有限公司 | 双面显示器、双面显示器的控制装置及其制造方法 |
| TWI672804B (zh) | 2014-05-23 | 2019-09-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| CN104134699A (zh) * | 2014-07-15 | 2014-11-05 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、阵列基板及显示装置 |
| JP6393936B2 (ja) * | 2014-09-05 | 2018-09-26 | Dic株式会社 | 薄膜トランジスタ、トランジスタアレイ、薄膜トランジスタの製造方法及びトランジスタアレイの製造方法 |
| JP6293818B2 (ja) * | 2016-05-31 | 2018-03-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN112530978B (zh) * | 2020-12-01 | 2024-02-13 | 京东方科技集团股份有限公司 | 开关器件结构及其制备方法、薄膜晶体管膜层、显示面板 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7211825B2 (en) * | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
| JP5126729B2 (ja) | 2004-11-10 | 2013-01-23 | キヤノン株式会社 | 画像表示装置 |
| KR20070092455A (ko) * | 2006-03-10 | 2007-09-13 | 삼성전자주식회사 | 표시 장치 및 그 제조 방법 |
| JP4609797B2 (ja) * | 2006-08-09 | 2011-01-12 | Ｎｅｃ液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
| DE102006039764A1 (de) * | 2006-08-24 | 2008-02-28 | Wabco Gmbh | Nutzfahrzeuganhänger mit einem elektronisch gesteuerten Bremssystem |
| KR20080047085A (ko) * | 2006-11-24 | 2008-05-28 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판 및 그 제조방법 |
| KR20080052107A (ko) * | 2006-12-07 | 2008-06-11 | 엘지전자 주식회사 | 산화물 반도체층을 구비한 박막 트랜지스터 |
| KR101410926B1 (ko) * | 2007-02-16 | 2014-06-24 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조방법 |
| KR101375831B1 (ko) * | 2007-12-03 | 2014-04-02 | 삼성전자주식회사 | 산화물 반도체 박막 트랜지스터를 이용한 디스플레이 장치 |
| JP5584960B2 (ja) * | 2008-07-03 | 2014-09-10 | ソニー株式会社 | 薄膜トランジスタおよび表示装置 |
| JP2010045159A (ja) * | 2008-08-12 | 2010-02-25 | Fujifilm Corp | 薄膜電界効果型トランジスタ及びその製造方法 |
| US7989321B2 (en) * | 2008-08-21 | 2011-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device gate structure including a gettering layer |
| JP5372435B2 (ja) * | 2008-09-02 | 2013-12-18 | 株式会社ジャパンディスプレイ | 表示装置 |
| JP2010062233A (ja) * | 2008-09-02 | 2010-03-18 | Hitachi Displays Ltd | 表示装置 |
| JP5484853B2 (ja) * | 2008-10-10 | 2014-05-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN101740631B (zh) * | 2008-11-07 | 2014-07-16 | 株式会社半导体能源研究所 | 半导体装置及该半导体装置的制造方法 |
| JP2010135771A (ja) | 2008-11-07 | 2010-06-17 | Semiconductor Energy Lab Co Ltd | 半導体装置及び当該半導体装置の作製方法 |
| US8865516B2 (en) * | 2009-06-29 | 2014-10-21 | Sharp Kabushiki Kaisha | Oxide semiconductor, thin film transistor array substrate and production method thereof, and display device |
| KR101093424B1 (ko) * | 2009-11-10 | 2011-12-14 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시 장치 및 그의 제조 방법 |
| KR101511076B1 (ko) * | 2009-12-08 | 2015-04-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| JP5727204B2 (ja) * | 2009-12-11 | 2015-06-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2011
- 2011-07-29 US US13/193,755 patent/US20120032172A1/en not_active Abandoned
- 2011-08-02 TW TW105122742A patent/TWI595670B/zh active
- 2011-08-02 TW TW106117660A patent/TW201733133A/zh unknown
- 2011-08-02 TW TW100127417A patent/TWI553875B/zh not_active IP Right Cessation
- 2011-08-02 TW TW107136184A patent/TWI663639B/zh not_active IP Right Cessation
- 2011-08-03 JP JP2011169779A patent/JP5876682B2/ja not_active Expired - Fee Related
- 2011-08-03 KR KR1020110077182A patent/KR101991690B1/ko not_active Expired - Fee Related
-
2017
- 2017-06-12 US US15/619,670 patent/US20170278976A1/en not_active Abandoned