JP5858952B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5858952B2
JP5858952B2 JP2013105985A JP2013105985A JP5858952B2 JP 5858952 B2 JP5858952 B2 JP 5858952B2 JP 2013105985 A JP2013105985 A JP 2013105985A JP 2013105985 A JP2013105985 A JP 2013105985A JP 5858952 B2 JP5858952 B2 JP 5858952B2
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JP
Japan
Prior art keywords
protective film
semiconductor device
forming
manufacturing
semiconductor
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Active
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JP2013105985A
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English (en)
Japanese (ja)
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JP2014229651A5 (https=
JP2014229651A (ja
Inventor
肇 秋山
肇 秋山
岡田　章
章 岡田
欽也 山下
欽也 山下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2013105985A priority Critical patent/JP5858952B2/ja
Priority to US14/188,378 priority patent/US9117880B2/en
Priority to CN201410174444.7A priority patent/CN104183510B/zh
Publication of JP2014229651A publication Critical patent/JP2014229651A/ja
Publication of JP2014229651A5 publication Critical patent/JP2014229651A5/ja
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Publication of JP5858952B2 publication Critical patent/JP5858952B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Automation & Control Theory (AREA)
JP2013105985A 2013-05-20 2013-05-20 半導体装置の製造方法 Active JP5858952B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013105985A JP5858952B2 (ja) 2013-05-20 2013-05-20 半導体装置の製造方法
US14/188,378 US9117880B2 (en) 2013-05-20 2014-02-24 Method for manufacturing semiconductor device
CN201410174444.7A CN104183510B (zh) 2013-05-20 2014-04-28 半导体装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013105985A JP5858952B2 (ja) 2013-05-20 2013-05-20 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2014229651A JP2014229651A (ja) 2014-12-08
JP2014229651A5 JP2014229651A5 (https=) 2015-07-02
JP5858952B2 true JP5858952B2 (ja) 2016-02-10

Family

ID=51896099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013105985A Active JP5858952B2 (ja) 2013-05-20 2013-05-20 半導体装置の製造方法

Country Status (3)

Country Link
US (1) US9117880B2 (https=)
JP (1) JP5858952B2 (https=)
CN (1) CN104183510B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106291265A (zh) * 2015-05-13 2017-01-04 无锡华润上华半导体有限公司 Dc-dc电路中开关管的耐压测试方法
DE112016007192T5 (de) 2016-09-01 2019-05-09 Mitsubishi Electric Corporation Verfahren zum vermessen einer halbleitervorrichtung
JP7217688B2 (ja) * 2019-09-26 2023-02-03 三菱電機株式会社 半導体装置、及び半導体素子の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2969086B2 (ja) 1996-09-25 1999-11-02 中日本電子株式会社 大電流用小型接触子
RU2190897C2 (ru) * 1996-10-30 2002-10-10 Самсунг Электроникс Ко., Лтд. Способ изготовления полупроводникового запоминающего устройства, имеющего самовыравненный контакт
JP3587019B2 (ja) * 1997-04-08 2004-11-10 ソニー株式会社 半導体装置の製造方法
JP2003130889A (ja) 2001-10-29 2003-05-08 Vector Semicon Kk 半導体装置検査装置及び検査方法
JP4609983B2 (ja) * 2004-04-30 2011-01-12 ルネサスエレクトロニクス株式会社 電極パッドを備える素子
CH700392B1 (de) * 2009-02-06 2012-12-31 Gerhard Obrist Abgabevorrichtung für die dosierte Abgabe einer Flüssiggasformulierung und Verfahren zur Herstellung der Abgabevorrichtung.
JP5160498B2 (ja) * 2009-05-20 2013-03-13 ルネサスエレクトロニクス株式会社 半導体装置
JP5486866B2 (ja) * 2009-07-29 2014-05-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2012064698A (ja) * 2010-09-15 2012-03-29 Ricoh Co Ltd 半導体装置及びそのレイアウト方法

Also Published As

Publication number Publication date
CN104183510A (zh) 2014-12-03
US9117880B2 (en) 2015-08-25
US20140342544A1 (en) 2014-11-20
JP2014229651A (ja) 2014-12-08
CN104183510B (zh) 2017-05-10

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