CN104183510B - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN104183510B
CN104183510B CN201410174444.7A CN201410174444A CN104183510B CN 104183510 B CN104183510 B CN 104183510B CN 201410174444 A CN201410174444 A CN 201410174444A CN 104183510 B CN104183510 B CN 104183510B
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CN
China
Prior art keywords
protective film
semiconductor device
forming
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201410174444.7A
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English (en)
Chinese (zh)
Other versions
CN104183510A (zh
Inventor
秋山肇
冈田章
山下钦也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN104183510A publication Critical patent/CN104183510A/zh
Application granted granted Critical
Publication of CN104183510B publication Critical patent/CN104183510B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Automation & Control Theory (AREA)
CN201410174444.7A 2013-05-20 2014-04-28 半导体装置的制造方法 Expired - Fee Related CN104183510B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013105985A JP5858952B2 (ja) 2013-05-20 2013-05-20 半導体装置の製造方法
JP2013-105985 2013-05-20

Publications (2)

Publication Number Publication Date
CN104183510A CN104183510A (zh) 2014-12-03
CN104183510B true CN104183510B (zh) 2017-05-10

Family

ID=51896099

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410174444.7A Expired - Fee Related CN104183510B (zh) 2013-05-20 2014-04-28 半导体装置的制造方法

Country Status (3)

Country Link
US (1) US9117880B2 (https=)
JP (1) JP5858952B2 (https=)
CN (1) CN104183510B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106291265A (zh) * 2015-05-13 2017-01-04 无锡华润上华半导体有限公司 Dc-dc电路中开关管的耐压测试方法
DE112016007192T5 (de) 2016-09-01 2019-05-09 Mitsubishi Electric Corporation Verfahren zum vermessen einer halbleitervorrichtung
JP7217688B2 (ja) * 2019-09-26 2023-02-03 三菱電機株式会社 半導体装置、及び半導体素子の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1181628A (zh) * 1996-10-30 1998-05-13 三星电子株式会社 具有自对准触点半导体存储器件的制造方法
CN1198000A (zh) * 1997-04-08 1998-11-04 索尼株式会社 半导体器件的制造方法
CN101894816A (zh) * 2009-05-20 2010-11-24 瑞萨电子株式会社 半导体器件

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2969086B2 (ja) 1996-09-25 1999-11-02 中日本電子株式会社 大電流用小型接触子
JP2003130889A (ja) 2001-10-29 2003-05-08 Vector Semicon Kk 半導体装置検査装置及び検査方法
JP4609983B2 (ja) * 2004-04-30 2011-01-12 ルネサスエレクトロニクス株式会社 電極パッドを備える素子
CH700392B1 (de) * 2009-02-06 2012-12-31 Gerhard Obrist Abgabevorrichtung für die dosierte Abgabe einer Flüssiggasformulierung und Verfahren zur Herstellung der Abgabevorrichtung.
JP5486866B2 (ja) * 2009-07-29 2014-05-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2012064698A (ja) * 2010-09-15 2012-03-29 Ricoh Co Ltd 半導体装置及びそのレイアウト方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1181628A (zh) * 1996-10-30 1998-05-13 三星电子株式会社 具有自对准触点半导体存储器件的制造方法
CN1198000A (zh) * 1997-04-08 1998-11-04 索尼株式会社 半导体器件的制造方法
CN101894816A (zh) * 2009-05-20 2010-11-24 瑞萨电子株式会社 半导体器件

Also Published As

Publication number Publication date
CN104183510A (zh) 2014-12-03
US9117880B2 (en) 2015-08-25
US20140342544A1 (en) 2014-11-20
JP5858952B2 (ja) 2016-02-10
JP2014229651A (ja) 2014-12-08

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Granted publication date: 20170510