JP5847157B2 - 有機半導体デバイス用の正孔伝導層用のドーパント及びその使用 - Google Patents
有機半導体デバイス用の正孔伝導層用のドーパント及びその使用 Download PDFInfo
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- JP5847157B2 JP5847157B2 JP2013501693A JP2013501693A JP5847157B2 JP 5847157 B2 JP5847157 B2 JP 5847157B2 JP 2013501693 A JP2013501693 A JP 2013501693A JP 2013501693 A JP2013501693 A JP 2013501693A JP 5847157 B2 JP5847157 B2 JP 5847157B2
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- doped
- hole
- bis
- npb
- phenyl
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 18
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- 125000004122 cyclic group Chemical group 0.000 claims description 3
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- KSSABTOENVKMLW-UHFFFAOYSA-N 2-N,2-N,2-N',2-N'-tetrakis(4-phenylphenyl)-9,9'-spirobi[fluorene]-2,2'-diamine Chemical compound C1=CC=CC=C1C1=CC=C(N(C=2C=CC(=CC=2)C=2C=CC=CC=2)C=2C=C3C4(C5=CC(=CC=C5C5=CC=CC=C54)N(C=4C=CC(=CC=4)C=4C=CC=CC=4)C=4C=CC(=CC=4)C=4C=CC=CC=4)C4=CC=CC=C4C3=CC=2)C=C1 KSSABTOENVKMLW-UHFFFAOYSA-N 0.000 description 1
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- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
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| PCT/EP2011/001645 WO2011120709A1 (de) | 2010-03-31 | 2011-03-31 | Dotierstoff für eine lochleiterschicht für organische halbleiterbauelemente und verwendung dazu |
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| DE102010062877A1 (de) * | 2010-12-13 | 2012-06-21 | Osram Opto Semiconductors Gmbh | Organisches Lichtemittierendes Bauelement und Verwendung eines Kupferkomplexes in einer Ladungstransportschicht |
| CN102731533B (zh) | 2011-04-12 | 2016-08-10 | 精工爱普生株式会社 | 噻二唑系化合物、发光元件用化合物、发光元件、发光装置、认证装置以及电子设备 |
| JP5765034B2 (ja) | 2011-04-18 | 2015-08-19 | セイコーエプソン株式会社 | チアジアゾール系化合物、発光素子用化合物、発光素子、発光装置、認証装置および電子機器 |
| KR20130018547A (ko) | 2011-08-09 | 2013-02-25 | 세이코 엡슨 가부시키가이샤 | 티아디아졸계 화합물, 발광 소자, 발광 장치, 인증 장치, 전자 기기 |
| JP5790279B2 (ja) | 2011-08-09 | 2015-10-07 | セイコーエプソン株式会社 | 発光素子、発光装置および電子機器 |
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| CN118355092A (zh) | 2021-12-21 | 2024-07-16 | 默克专利有限公司 | 电子器件 |
| WO2023152346A1 (de) | 2022-02-14 | 2023-08-17 | Merck Patent Gmbh | Materialien für elektronische vorrichtungen |
| EP4526279A1 (de) | 2022-05-18 | 2025-03-26 | Merck Patent GmbH | Verfahren zur herstellung von deuterierten organischen verbindungen |
| EP4555039A1 (de) | 2022-07-11 | 2025-05-21 | Merck Patent GmbH | Materialien für elektronische vorrichtungen |
| EP4321506A1 (en) | 2022-08-09 | 2024-02-14 | Novaled GmbH | Metal complex, semiconductor layer comprising a metal complex and organic electronic device |
| WO2024170605A1 (en) | 2023-02-17 | 2024-08-22 | Merck Patent Gmbh | Materials for organic electroluminescent devices |
| WO2024218109A1 (de) | 2023-04-20 | 2024-10-24 | Merck Patent Gmbh | Materialien für elektronische vorrichtungen |
| WO2025012253A1 (en) | 2023-07-12 | 2025-01-16 | Merck Patent Gmbh | Materials for electronic devices |
| WO2025021855A1 (de) | 2023-07-27 | 2025-01-30 | Merck Patent Gmbh | Materialien für organische lichtemittierende vorrichtungen und organische sensoren |
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| EP2259360B1 (en) * | 2001-08-29 | 2021-11-03 | The Trustees of Princeton University | Organic light emitting devices having carrier transporting layers comprising metal complexes |
| US9157023B2 (en) | 2003-11-18 | 2015-10-13 | Koninklijke Philips N.V. | Light-emitting device with an iridium complex |
| US7867676B2 (en) * | 2007-07-31 | 2011-01-11 | Xerox Corporation | Copper containing hole blocking layer photoconductors |
| DE102008051737B4 (de) * | 2007-10-24 | 2022-10-06 | Novaled Gmbh | Quadratisch planare Übergangsmetallkomplexe, organische halbleitende Materialien sowie elektronische oder optoelektronische Bauelemente, die diese umfassen und Verwendung derselben |
| JP2011060998A (ja) | 2009-09-10 | 2011-03-24 | Konica Minolta Holdings Inc | 有機光電変換素子、その製造方法、有機光電変換素子を用いた太陽電池及び光センサアレイ |
| WO2011033023A1 (en) * | 2009-09-18 | 2011-03-24 | Osram Opto Semiconductors Gmbh | Organic electronic device and dopant for doping an organic semiconducting matrix material |
| JP4798282B2 (ja) * | 2009-10-27 | 2011-10-19 | 大日本印刷株式会社 | 正孔注入輸送層を有するデバイス、及びその製造方法、並びに正孔注入輸送層形成用インク |
| DE102010013495A1 (de) * | 2010-03-31 | 2011-10-06 | Siemens Aktiengesellschaft | Dotierstoff für eine Lochleiterschicht für organische Halbleiterbauelemente und Verwendung dazu |
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| US20130099209A1 (en) | 2013-04-25 |
| CN106410026B (zh) | 2019-05-14 |
| CN102947414B (zh) | 2016-04-27 |
| EP2553047B1 (de) | 2016-12-21 |
| KR101757888B1 (ko) | 2017-07-14 |
| CN106410026A (zh) | 2017-02-15 |
| KR101705136B1 (ko) | 2017-02-09 |
| KR20130025897A (ko) | 2013-03-12 |
| US20150200374A1 (en) | 2015-07-16 |
| DE102010013495A1 (de) | 2011-10-06 |
| US9276223B2 (en) | 2016-03-01 |
| CN102947414A (zh) | 2013-02-27 |
| JP2013527599A (ja) | 2013-06-27 |
| US9006716B2 (en) | 2015-04-14 |
| EP2553047A1 (de) | 2013-02-06 |
| KR20170015573A (ko) | 2017-02-08 |
| WO2011120709A1 (de) | 2011-10-06 |
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