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  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
  • H10K50/14—Carrier transporting layers
  • H10K50/15—Hole transporting layers
  • H10K50/155—Hole transporting layers comprising dopants
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  • H10K50/17—Carrier injection layers
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  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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  • H10K71/30—Doping active layers, e.g. electron transporting layers
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  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/30—Coordination compounds
  • H10K85/371—Metal complexes comprising a group IB metal element, e.g. comprising copper, gold or silver
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  • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
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  • C09K2211/1007—Non-condensed systems
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  • C09K2211/1011—Condensed systems
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  • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
  • C09K2211/10—Non-macromolecular compounds
  • C09K2211/1003—Carbocyclic compounds
  • C09K2211/1014—Carbocyclic compounds bridged by heteroatoms, e.g. N, P, Si or B
• • C—CHEMISTRY; METALLURGY
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  • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
  • C09K2211/18—Metal complexes
  • C09K2211/188—Metal complexes of other metals not provided for in one of the previous groups
• • H—ELECTRICITY
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  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
  • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
  • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
  • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/549—Organic PV cells

Definitions

• the invention relates to novel organometallic materials for hole injection layers in organic electronic components, in particular in light-emitting components such as organic light emitting diodes (OLED) or organic light emitting electrochemical cells (OLEEC) or organic field effect transistors or organic solar cells or organic photodetectors.
• OLED organic light emitting diodes
• OEEC organic light emitting electrochemical cells
• organic field effect transistors organic solar cells or organic photodetectors.
• the conductivity of the material can be increased by orders of magnitude.
• the object of the present invention is to provide further dopants for use in hole conductor materials.
• the object of the invention is therefore to provide a doped hole conductor layer for use in organic electronic components, comprising at least one hole-conducting matrix and a square-planar mononuclear transition metal complex as dopant. It is also an object of the present invention to provide the use of such a hole conductor layer, and finally an organic electronic component.
• the dopant is a square-planar mononuclear transition metal complex with a copper, palladium, platinum, cobalt or nickel atom as the central atom.
• any complex form is referred to, which deviates from the tetrahedral complex configuration according to a crystal structure analysis by more than the usual Meßau- techniken. In no case is it restricted to a planar arrangement of the ligands around the central atom.
• the complexes can be present in their cis or trans form with the same empirical formula. In general, especially for small substituents R, both isomers are equally good at doping. In the following, only the trans isomer is discussed as a representative of both isomers.
• Formula I shows an example of the square-planar copper (II) complexes according to the invention.
• the complex may be in the cis or trans form.
• the bridge Y 1 or Y 2 may be independently N or CR, where R may be any aliphatic or aromatic substituent as discussed below for R 1a , R 1b , R 2a and R 2b ,
• bridge C-H is particularly preferred. This is used in all embodiments.
• the electron-poor representatives of this class form a preferred class within the dopants for hole conductor materials disclosed herein.
• the substituents Ri a, Ri b, R 2a and R 2b may be independently -hydrogen or -Deuterium, methyl, ethyl comparablesammlungrt straight, branched, condensed (deca hydronaphthyl-), annular (cyclohexyl) or wholly or partially substituted alkyl radicals (Ci - C 20 ) be.
• These alkyl radicals can be ether groups (ethoxy, methoxy, etc.), ester, amide, carbonate groups, etc., or else halogens, in particular special F included.
• halogens in particular special F included.
• For the purposes of the invention are also substituted or unsubstituted aliphatic rings or ring systems, such as cyclohexyl.
• Ria, R 1b , R 2a and R 2 b are not restricted to saturated systems, but also include substituted or unsubstituted aromatics such as phenyl, diphenyl, naphthyl, phenanthryl etc. or benzyl, etc.
• a subset of suitable substituents Heterocycles are shown in Table 1.
• R is derived analogously from the radicals R ia , Rib R2a and R 2 b defined here.
• Table 1 shows a selection of substituted or un- substituted heterocycles which are suitable as radicals R a, Rib, R2a and R 2b independently in question. For simplicity, only the basic unit is shown. Binding to the ligand may occur at any bondable site of the Body done. Very particularly preferably, the electron-deficient variants when the substituents R la, R lb / R 2a and R 2b carrying electron-withdrawing substituents by fluorine directly at the binding carbon (see formulas 3.3a to 3.3c).
• Formula III shows various types of particularly preferred substituents for the radicals R ia , Rib / R2a and R 2 b-
• R 7 are independently selected as the radicals R a, Rib / R2a and R 2 b.
• R x is particularly preferred, independently of one another H or F.
• the syntheses of the complexes will not be discussed in more detail, as they have been studied very thoroughly. (Quotation: book "The Chemistry of Metal CVD, T. Koda, M. Hampden Smith, VCH 1994, ISBN 3-527-29071-0, pages 178-192).
• these complexes are used as precursors for copper CVD (chemical vapor deposition) in the semiconductor industry. Many volatile derivatives are therefore commercially available.
• the materials according to the invention for the production of the hole transport layer, in a concentration of 0.1 -
• the deposition of the layer can be carried out both from the gas phase and liquid phase.
• hole transporters which are deposited from the gas phase, come here but not restrictive in question:
• These monomolecular hole transport materials may also be deposited from the liquid phase or blended into the polymeric materials mentioned below.
• the film forming properties are improved when low molecular weight and polymeric materials are mixed.
• the mixing ratios are between 0 - 100%.
• PEDOT poly (3,4-ethylenedioxythiophene)
• PVK poly (9-vinylcarbazole)
• PTPD poly (N, N'-bis (4-butylphenyl) -
• Table 2 shows typical hole-transporting polymers, which are preferably deposited from the liquid phase.
• the mentioned materials can also be used as any other materials.
• Suitable solvents are the customary organic solvents, but especially chlorobenzene, chloroform, benzene, anisole, toluene, xylene, THF, methoxypropyl acetate, phentols, methyl ethyl ketone, N-methylpyrrolidone, gamma-butyrolactone, etc.
• NPB 1 - 2 hole conductor molecules
• the dopants in the form of square-planar transition metal complexes which are shown here for the first time, can be used for the first time to introduce cheap and easily accessible compounds into this technique of dopant additions.
• many of the copper 2+ compounds are readily available because they are used in copper CVD processes in the semiconductor industry.
• the manufacturing processes are well developed, the dopants are often low, the components made with them have a neutral appearance in the off state and finally, the materials are suitable for the deposition of the doped hole conductors from the gas or liquid phase.
• FIG. 1 shows the structure of an OLEEC schematically.
• An OLED 7 is in most cases a simple one
• an organic layer 3 between two organic auxiliary layers, an electron transport layer 5 and a hole transport layer 6 constructed.
• This organically active part of the OLED comprising the layers 3, 5 and 6 is then brought between two electrodes 2 and 4.
• an active emitting layer 3 of an OLED consists of a matrix in which an emitting species is embedded.
• Layer 3 also comprises a layer stack, for example for the emitter red, green, blue.
• the transparent substrate 1 On the transparent substrate 1 is the lower transparent electrode layer 2, for example, the anode. Then comes the hole transport layer 6, whose doping is the subject of the present invention. On the side of the organic active layer opposite the hole conductor layer is the electron injection layer 5, on which the upper electrode 4, for example a metal electrode, is located.
• the OLED 7 is encapsulated in the rule, which is not shown here. example 1
• the dopant Cu (acac) 2 was doped in concentrations of 5% and 10% relative to the evaporation rate in NPB. Substrates, layer thicknesses and size of the devices were as mentioned in the first experiment.
• the component with 5% concentration gave the characteristic marked with squares and the component with 10% concentration the characteristic marked by triangles.
• FIG. 2 shows the graphical summary of the experiments, ie the current-voltage characteristics of NPB (reference line) and NPB doped with Cu (acac) 2 .
• the undoped NPB and the Cu (acac) 2 doped NPB layers were each deposited on a silica glass disk. These samples have no electrical contacts and are only used to measure the absorption and emission spectra of the individual layers.
• the pure NPB layer yielded the characteristic curves for absorption or photo-luminescence spectra marked with black diamonds shown in FIG. Samples of 5% doped Cu (acac) 2 gave the squares shown in squares and the samples of 10% of doped Cu (acac) 2 gave the triangular labeled Spektra.
• Figure 3 shows the absorption spectra of NPB and NPB doped with Cu (acac) 2 .
• the device with 5% concentration yielded the quadratic characteristic and the device with 10%
• the curve marked with black diamonds again shows the reference component made of pure NPB.
• For both concentrations an increase of the current density can be seen as well as a symmetry-like behavior, both of which show an existing doping effect.
• the horizontal area of the 5% line is not a current limit on the part but is the compliance (measuring limit) of the measuring device.
• the higher current density of the 5% sample compared to the 10% sample shows that the optimum of the dopant concentration is below 10%.
• the optimal concentration does not necessarily have to be between 5% and 10%, but it can also be deeper, which can cause an even greater doping effect.
• Figure 5 shows the current-voltage characteristics of NPB and NPB doped with Cu (tcac) 2 .
• the undoped NPB and the Cu (tfac) 2 doped NPB layers were each deposited on a quartz glass disk. These samples have no electrical contacts and are only used to measure the absorption and emission spectra of the individual layers.
• the pure NPB reference layer yielded black diamond marked characteristics for absorbance and phot Luminescence spectra.
• the samples with 5% doped Cu (tfac) 2 yielded the spectra shown with squares and the samples with 10% doped Cu ( tfac) 2 gave the triangles marked spectra.
• Example 4 The doping effect in Example 4 is lower for the 10% sample and again this is evidenced by the lower drop in absorption compared to the 5% sample.
• Comparison of the PL spectra shows that the samples doped with Cu (tfac) 2 also have a higher emission than the pure NPB sample, as in Example 3. At the same time a shift of the emission towards low wavelengths can be observed. Pure NPB emits at 444nm while emitting 5% and 10% doped layers at 436nm and 434nm, respectively. The shift of the emission due to doping can again be explained by the charge-transfer complex. Again, what is new here is the emission enhancing effect of copper acetylacetonate. As already mentioned, amplification is unusual in that dopants are actually known as emission quenchers.
• Figure 6 shows the absorption spectra of NPB and NPB doped with Cu (tfac) 2 in two concentrations
• FIG. 7 shows PL spectra of NPB and NPB doped with Cu (tfac) 2 .
• Luminescence (cd / m 2) Efficiency (cd / A) and lifetime (h) of organic electronic components such as in particular organic light emitting diodes (Fig.l) depend heavily on the Exzito- nenêt in the light emitting layer and the quality of Ladungsskainj ection from and are also limited by these.
• This invention describes a hole injection layer consisting of square planar mononuclear transition metal complexes, such as copper 2+ complexes, embedded in a hole-conducting matrix.

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