JP5843756B2 - パルス制御される高出力レーザダイオード用のヒートシンク - Google Patents

パルス制御される高出力レーザダイオード用のヒートシンク Download PDF

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Publication number
JP5843756B2
JP5843756B2 JP2012511254A JP2012511254A JP5843756B2 JP 5843756 B2 JP5843756 B2 JP 5843756B2 JP 2012511254 A JP2012511254 A JP 2012511254A JP 2012511254 A JP2012511254 A JP 2012511254A JP 5843756 B2 JP5843756 B2 JP 5843756B2
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Japan
Prior art keywords
semiconductor laser
layer
primary layer
primary
laser module
Prior art date
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Expired - Fee Related
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JP2012511254A
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English (en)
Japanese (ja)
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JP2012527754A (ja
JP2012527754A5 (https=
Inventor
ヘアデン ヴェアナー
ヘアデン ヴェアナー
シュヴァーツ ハンス−ヨヘン
シュヴァーツ ハンス−ヨヘン
ピトロフ ヴォルフガング
ピトロフ ヴォルフガング
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Robert Bosch GmbH
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Robert Bosch GmbH
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Publication date
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Publication of JP2012527754A publication Critical patent/JP2012527754A/ja
Publication of JP2012527754A5 publication Critical patent/JP2012527754A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42—Fillings
    • H10W76/48—Fillings including materials for absorbing or reacting with moisture or other undesired substances
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
    • F02P23/00—Other ignition
    • F02P23/04—Other physical ignition means, e.g. using laser rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094076—Pulsed or modulated pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/02365—Fixing laser chips on mounts by clamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2012511254A 2009-05-22 2010-05-18 パルス制御される高出力レーザダイオード用のヒートシンク Expired - Fee Related JP5843756B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009026413A DE102009026413A1 (de) 2009-05-22 2009-05-22 Halbleiterlasermodul und Herstellungsverfahren hierfür
DE102009026413.2 2009-05-22
PCT/EP2010/056779 WO2010133572A1 (de) 2009-05-22 2010-05-18 Wärmesenke für gepulste hochleistungslaserdiode

Publications (3)

Publication Number Publication Date
JP2012527754A JP2012527754A (ja) 2012-11-08
JP2012527754A5 JP2012527754A5 (https=) 2014-12-18
JP5843756B2 true JP5843756B2 (ja) 2016-01-13

Family

ID=42470725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012511254A Expired - Fee Related JP5843756B2 (ja) 2009-05-22 2010-05-18 パルス制御される高出力レーザダイオード用のヒートシンク

Country Status (5)

Country Link
US (1) US8891567B2 (https=)
EP (1) EP2433343A1 (https=)
JP (1) JP5843756B2 (https=)
DE (1) DE102009026413A1 (https=)
WO (1) WO2010133572A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9933554B2 (en) 2013-07-03 2018-04-03 California Institute Of Technology High-coherence semiconductor light sources
AU2014284466A1 (en) * 2013-07-03 2015-12-24 California Institute Of Technology High-coherence semiconductor light sources
WO2015153208A1 (en) * 2014-03-31 2015-10-08 Ipg Photonics Corporation High-power laser diode packaging method and laser diode module
CN105244755B (zh) * 2015-10-24 2018-04-03 长沙青波光电科技有限公司 半导体激光单管芯片封装方法
US10866038B2 (en) * 2018-10-25 2020-12-15 United Arab Emirates University Heat sinks with vibration enhanced heat transfer for non-liquid heat sources
CN113847183B (zh) * 2021-09-23 2022-09-30 上海鑫歆源电子有限公司 一种热量控制模块、驱动电路及点火线圈驱动器
TWI832589B (zh) * 2022-11-30 2024-02-11 晶呈科技股份有限公司 雷射二極體及雷射二極體製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1113920A (en) * 1967-04-18 1968-05-15 Standard Telephones Cables Ltd An improved laser unit
JPH02102756U (https=) * 1989-01-31 1990-08-15
JPH0448656U (https=) * 1990-08-31 1992-04-24
JPH0537089A (ja) * 1991-07-25 1993-02-12 Mitsubishi Electric Corp 半導体レーザ装置
JPH05326767A (ja) * 1992-03-19 1993-12-10 Sumitomo Electric Ind Ltd 放熱基板
JP3297948B2 (ja) * 1993-05-17 2002-07-02 ソニー株式会社 レーザ光学素子の固定方法及びレーザ光学装置
JPH08195528A (ja) * 1995-01-13 1996-07-30 Fujitsu Ltd レーザダイオードモジュール
FR2736764B1 (fr) * 1995-07-13 1997-08-08 Thomson Csf Source laser a semiconducteurs
JP2001156384A (ja) 1999-11-29 2001-06-08 Nec Corp 半導体レーザ
JP2001330789A (ja) * 2000-05-19 2001-11-30 Ricoh Co Ltd 画像形成装置
US20030152773A1 (en) * 2002-02-14 2003-08-14 Chrysler Gregory M. Diamond integrated heat spreader and method of manufacturing same
JP2003318475A (ja) * 2002-04-24 2003-11-07 Kyocera Corp 光半導体素子のマウント構造
JP4037815B2 (ja) * 2003-09-29 2008-01-23 オムロンレーザーフロント株式会社 レーザダイオードモジュール、レーザ装置、及びレーザ加工装置
JP2007194467A (ja) * 2006-01-20 2007-08-02 Sharp Corp 半導体レーザ装置
US7551656B2 (en) * 2006-03-29 2009-06-23 Lockheed Martin Coherent Technologies, Inc. Low stress optics mount using thermally conductive liquid metal or gel
WO2009037555A2 (en) * 2007-09-20 2009-03-26 Bookham Technology Plc High power semiconductor laser diodes

Also Published As

Publication number Publication date
DE102009026413A1 (de) 2010-11-25
US20120106582A1 (en) 2012-05-03
US8891567B2 (en) 2014-11-18
WO2010133572A1 (de) 2010-11-25
EP2433343A1 (de) 2012-03-28
JP2012527754A (ja) 2012-11-08

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