DE102009026413A1 - Halbleiterlasermodul und Herstellungsverfahren hierfür - Google Patents

Halbleiterlasermodul und Herstellungsverfahren hierfür Download PDF

Info

Publication number
DE102009026413A1
DE102009026413A1 DE102009026413A DE102009026413A DE102009026413A1 DE 102009026413 A1 DE102009026413 A1 DE 102009026413A1 DE 102009026413 A DE102009026413 A DE 102009026413A DE 102009026413 A DE102009026413 A DE 102009026413A DE 102009026413 A1 DE102009026413 A1 DE 102009026413A1
Authority
DE
Germany
Prior art keywords
semiconductor laser
layer
primary layer
substrate
primary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102009026413A
Other languages
German (de)
English (en)
Inventor
Werner Herden
Hans-Jochen Schwarz
Wolfgang Pittroff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to DE102009026413A priority Critical patent/DE102009026413A1/de
Priority to EP10721017A priority patent/EP2433343A1/de
Priority to JP2012511254A priority patent/JP5843756B2/ja
Priority to PCT/EP2010/056779 priority patent/WO2010133572A1/de
Priority to US13/259,292 priority patent/US8891567B2/en
Publication of DE102009026413A1 publication Critical patent/DE102009026413A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42—Fillings
    • H10W76/48—Fillings including materials for absorbing or reacting with moisture or other undesired substances
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
    • F02P23/00—Other ignition
    • F02P23/04—Other physical ignition means, e.g. using laser rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094076—Pulsed or modulated pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/02365—Fixing laser chips on mounts by clamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE102009026413A 2009-05-22 2009-05-22 Halbleiterlasermodul und Herstellungsverfahren hierfür Withdrawn DE102009026413A1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE102009026413A DE102009026413A1 (de) 2009-05-22 2009-05-22 Halbleiterlasermodul und Herstellungsverfahren hierfür
EP10721017A EP2433343A1 (de) 2009-05-22 2010-05-18 Wärmesenke für gepulste hochleistungslaserdiode
JP2012511254A JP5843756B2 (ja) 2009-05-22 2010-05-18 パルス制御される高出力レーザダイオード用のヒートシンク
PCT/EP2010/056779 WO2010133572A1 (de) 2009-05-22 2010-05-18 Wärmesenke für gepulste hochleistungslaserdiode
US13/259,292 US8891567B2 (en) 2009-05-22 2010-05-18 Heat sink for a pulsed high-power laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009026413A DE102009026413A1 (de) 2009-05-22 2009-05-22 Halbleiterlasermodul und Herstellungsverfahren hierfür

Publications (1)

Publication Number Publication Date
DE102009026413A1 true DE102009026413A1 (de) 2010-11-25

Family

ID=42470725

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102009026413A Withdrawn DE102009026413A1 (de) 2009-05-22 2009-05-22 Halbleiterlasermodul und Herstellungsverfahren hierfür

Country Status (5)

Country Link
US (1) US8891567B2 (https=)
EP (1) EP2433343A1 (https=)
JP (1) JP5843756B2 (https=)
DE (1) DE102009026413A1 (https=)
WO (1) WO2010133572A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9933554B2 (en) 2013-07-03 2018-04-03 California Institute Of Technology High-coherence semiconductor light sources
AU2014284466A1 (en) * 2013-07-03 2015-12-24 California Institute Of Technology High-coherence semiconductor light sources
WO2015153208A1 (en) * 2014-03-31 2015-10-08 Ipg Photonics Corporation High-power laser diode packaging method and laser diode module
CN105244755B (zh) * 2015-10-24 2018-04-03 长沙青波光电科技有限公司 半导体激光单管芯片封装方法
US10866038B2 (en) * 2018-10-25 2020-12-15 United Arab Emirates University Heat sinks with vibration enhanced heat transfer for non-liquid heat sources
CN113847183B (zh) * 2021-09-23 2022-09-30 上海鑫歆源电子有限公司 一种热量控制模块、驱动电路及点火线圈驱动器
TWI832589B (zh) * 2022-11-30 2024-02-11 晶呈科技股份有限公司 雷射二極體及雷射二極體製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1113920A (en) * 1967-04-18 1968-05-15 Standard Telephones Cables Ltd An improved laser unit
JPH02102756U (https=) * 1989-01-31 1990-08-15
JPH0448656U (https=) * 1990-08-31 1992-04-24
JPH0537089A (ja) * 1991-07-25 1993-02-12 Mitsubishi Electric Corp 半導体レーザ装置
JPH05326767A (ja) * 1992-03-19 1993-12-10 Sumitomo Electric Ind Ltd 放熱基板
JP3297948B2 (ja) * 1993-05-17 2002-07-02 ソニー株式会社 レーザ光学素子の固定方法及びレーザ光学装置
JPH08195528A (ja) * 1995-01-13 1996-07-30 Fujitsu Ltd レーザダイオードモジュール
FR2736764B1 (fr) * 1995-07-13 1997-08-08 Thomson Csf Source laser a semiconducteurs
JP2001156384A (ja) 1999-11-29 2001-06-08 Nec Corp 半導体レーザ
JP2001330789A (ja) * 2000-05-19 2001-11-30 Ricoh Co Ltd 画像形成装置
US20030152773A1 (en) * 2002-02-14 2003-08-14 Chrysler Gregory M. Diamond integrated heat spreader and method of manufacturing same
JP2003318475A (ja) * 2002-04-24 2003-11-07 Kyocera Corp 光半導体素子のマウント構造
JP4037815B2 (ja) * 2003-09-29 2008-01-23 オムロンレーザーフロント株式会社 レーザダイオードモジュール、レーザ装置、及びレーザ加工装置
JP2007194467A (ja) * 2006-01-20 2007-08-02 Sharp Corp 半導体レーザ装置
US7551656B2 (en) * 2006-03-29 2009-06-23 Lockheed Martin Coherent Technologies, Inc. Low stress optics mount using thermally conductive liquid metal or gel
WO2009037555A2 (en) * 2007-09-20 2009-03-26 Bookham Technology Plc High power semiconductor laser diodes

Also Published As

Publication number Publication date
US20120106582A1 (en) 2012-05-03
US8891567B2 (en) 2014-11-18
JP5843756B2 (ja) 2016-01-13
WO2010133572A1 (de) 2010-11-25
EP2433343A1 (de) 2012-03-28
JP2012527754A (ja) 2012-11-08

Similar Documents

Publication Publication Date Title
DE102009026413A1 (de) Halbleiterlasermodul und Herstellungsverfahren hierfür
DE102007030389B4 (de) Moduleinheit mit einer Wärmesenke
EP2291890B1 (de) Wärmeübertragungsvorrichtung mit wenigstens einem halbleiterbauelement, insbesondere einem laser- oder leuchtdiodenelement, und verfahren zu seiner montage
DE102013211977B3 (de) Festkörperlaseranordnung
EP0766354A1 (de) Laserdiodenbauelement mit Wärmesenke
DE102017112620A1 (de) Lasersystem und Herstellungsverfahren
WO2003032377A1 (de) Verfahren zur verbindung einer siliziumplatte mit einer weiteren platte
EP4396862B1 (de) Elektronisches modul mit wenigstens einem leistungshalbleiter und verfahren zu dessen herstellung
EP2530707A2 (de) Verfahren zum Fügen von Metall-Keramik-Substraten an Metallkörpern
DE10335622A1 (de) Harzversiegelte Halbleiterbaugruppe
DE102008026229A1 (de) Wärmeübertragungsvorrichtung zur doppelseitigen Kühlung eines Halbleiterbauelementes
WO2010136384A1 (de) Vertikal übereinander angeordnete laserdioden zum pumpen von festkörperlasern mit optimiertem fernfeld
DE102018210142B4 (de) Diodenlaseranordnung und Verfahren zum Herstellen einer Diodenlaseranordnung
DE102013105528A1 (de) Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates
DE102014105957B3 (de) Verfahren zur Herstellung einer Lötverbindung
WO2019243322A1 (de) Diodenlaseranordnung und verfahren zum herstellen einer diodenlaseranordnung
DE112020003541T5 (de) Leistungshalbleitermodul
WO2009036919A2 (de) Verfahren zur herstellung wenigstens einer strahlungsquelle
DE10226724B4 (de) Laserkristall mit einer Kühlstruktur, Verfahren zum Herstellen eines Laserkristalls mit einer Kühlstruktur sowie Verwendung eines solchen Laserkristalls
DE10252577A1 (de) Verfahren zum Erzeugen einer Lotverbindung durch kapillaren Lotfluß
WO2002014008A1 (de) Lötverfahren zur befestigung elektrischer bauelemente
EP4037865B1 (de) Verfahren zum bearbeiten und befestigen eines metall-keramik-substrate
DE102004012232B4 (de) Verfahren zum Herstellen von Plattenstapeln, insbesondere zum Herstellen von aus wenigstens einem Plattenstapel bestehenden Kühlern
DE102014114732B4 (de) Verfahren zum anbringen eines sättigbaren halbleiter-absorberelements auf einem träger und halbleiter-absorberelement-einheit
DE102013219990B4 (de) Verbindungsanordnung mit einem mittels Thermokompression gebondeten Verbindungsmittel und Verfahren

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee
R002 Refusal decision in examination/registration proceedings