JP5837178B2 - 化学気相堆積チャンバ用のライナアセンブリ - Google Patents

化学気相堆積チャンバ用のライナアセンブリ Download PDF

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Publication number
JP5837178B2
JP5837178B2 JP2014501055A JP2014501055A JP5837178B2 JP 5837178 B2 JP5837178 B2 JP 5837178B2 JP 2014501055 A JP2014501055 A JP 2014501055A JP 2014501055 A JP2014501055 A JP 2014501055A JP 5837178 B2 JP5837178 B2 JP 5837178B2
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liner
chamber
assembly
gas
liner assembly
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Japanese (ja)
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JP2014514744A (ja
JP2014514744A5 (enExample
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デーヴィッド キース カールソン，
デーヴィッド キース カールソン，
メフメト（トゥグリル） サミル，
メフメト（トゥグリル） サミル，
ニー オー． ミョー，
ニー オー． ミョー，
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2014501055A 2011-03-22 2011-07-26 化学気相堆積チャンバ用のライナアセンブリ Active JP5837178B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161466413P 2011-03-22 2011-03-22
US61/466,413 2011-03-22
PCT/US2011/045288 WO2012128783A1 (en) 2011-03-22 2011-07-26 Liner assembly for chemical vapor deposition chamber

Publications (3)

Publication Number Publication Date
JP2014514744A JP2014514744A (ja) 2014-06-19
JP2014514744A5 JP2014514744A5 (enExample) 2014-09-11
JP5837178B2 true JP5837178B2 (ja) 2015-12-24

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JP2014501055A Active JP5837178B2 (ja) 2011-03-22 2011-07-26 化学気相堆積チャンバ用のライナアセンブリ

Country Status (6)

Country Link
US (2) US8980005B2 (enExample)
JP (1) JP5837178B2 (enExample)
KR (1) KR101884003B1 (enExample)
CN (1) CN103430285B (enExample)
TW (1) TWI551720B (enExample)
WO (1) WO2012128783A1 (enExample)

Families Citing this family (201)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101033123B1 (ko) * 2004-06-30 2011-05-11 엘지디스플레이 주식회사 액정표시장치의 제조를 위한 챔버형 장치
EP2553144B1 (en) * 2010-03-29 2016-11-23 Koolerheadz Gas injection device with uniform gas velocity
US9441295B2 (en) * 2010-05-14 2016-09-13 Solarcity Corporation Multi-channel gas-delivery system
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
KR101884003B1 (ko) * 2011-03-22 2018-07-31 어플라이드 머티어리얼스, 인코포레이티드 화학 기상 증착 챔버를 위한 라이너 조립체
US9512520B2 (en) * 2011-04-25 2016-12-06 Applied Materials, Inc. Semiconductor substrate processing system
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
US9982346B2 (en) * 2011-08-31 2018-05-29 Alta Devices, Inc. Movable liner assembly for a deposition zone in a CVD reactor
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) * 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US20140116336A1 (en) * 2012-10-26 2014-05-01 Applied Materials, Inc. Substrate process chamber exhaust
JP5343162B1 (ja) * 2012-10-26 2013-11-13 エピクルー株式会社 エピタキシャル成長装置
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
CN104822866B (zh) * 2012-11-27 2017-09-01 索泰克公司 具有可互换气体喷射器的沉积系统和相关的方法
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US9768043B2 (en) 2013-01-16 2017-09-19 Applied Materials, Inc. Quartz upper and lower domes
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US10344380B2 (en) 2013-02-11 2019-07-09 Globalwafers Co., Ltd. Liner assemblies for substrate processing systems
US20140224175A1 (en) * 2013-02-14 2014-08-14 Memc Electronic Materials, Inc. Gas distribution manifold system for chemical vapor deposition reactors and method of use
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US9322097B2 (en) 2013-03-13 2016-04-26 Applied Materials, Inc. EPI base ring
US9117670B2 (en) 2013-03-14 2015-08-25 Sunedison Semiconductor Limited (Uen201334164H) Inject insert liner assemblies for chemical vapor deposition systems and methods of using same
US9328420B2 (en) 2013-03-14 2016-05-03 Sunedison Semiconductor Limited (Uen201334164H) Gas distribution plate for chemical vapor deposition systems and methods of using same
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
KR20160003831A (ko) * 2013-04-30 2016-01-11 어플라이드 머티어리얼스, 인코포레이티드 공간적으로 분포된 가스 통로들을 갖는 유동 제어 라이너
WO2014179014A1 (en) * 2013-05-01 2014-11-06 Applied Materials, Inc. Inject and exhaust design for epi chamber flow manipulation
SG11201508512PA (en) * 2013-05-23 2015-12-30 Applied Materials Inc A coated liner assembly for a semiconductor processing chamber
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
RU2548578C2 (ru) * 2013-08-19 2015-04-20 Валерий Анатольевич Буробин Способ получения эпитаксиального слоя бинарного полупроводникового материала на монокристаллической подложке посредством металлоорганического химического осаждения из газовой фазы
US9856580B2 (en) * 2013-08-19 2018-01-02 Applied Materials, Inc. Apparatus for impurity layered epitaxy
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
WO2015195256A1 (en) * 2014-06-18 2015-12-23 Applied Materials, Inc. One-piece injector assembly
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
CN106663606A (zh) * 2014-06-20 2017-05-10 应用材料公司 用于将气体注入外延腔室的设备
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
WO2016036497A1 (en) * 2014-09-05 2016-03-10 Applied Materials, Inc. Upper dome for epi chamber
US11060203B2 (en) 2014-09-05 2021-07-13 Applied Materials, Inc. Liner for epi chamber
US10760161B2 (en) * 2014-09-05 2020-09-01 Applied Materials, Inc. Inject insert for EPI chamber
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9478434B2 (en) 2014-09-24 2016-10-25 Applied Materials, Inc. Chlorine-based hardmask removal
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
EP3275008B1 (en) * 2015-03-25 2022-02-23 Applied Materials, Inc. Chamber components for epitaxial growth apparatus
US9972740B2 (en) 2015-06-07 2018-05-15 Tesla, Inc. Chemical vapor deposition tool and process for fabrication of photovoltaic structures
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10105732B2 (en) * 2016-01-05 2018-10-23 Taiwan Semiconductor Manufacturing Co., Ltd. Coater and surface treatment method
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9748434B1 (en) 2016-05-24 2017-08-29 Tesla, Inc. Systems, method and apparatus for curing conductive paste
US9958782B2 (en) * 2016-06-29 2018-05-01 Applied Materials, Inc. Apparatus for post exposure bake
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
KR101874184B1 (ko) * 2016-07-26 2018-07-03 에스케이실트론 주식회사 에피택셜 웨이퍼 제조 장치
US9954136B2 (en) 2016-08-03 2018-04-24 Tesla, Inc. Cassette optimized for an inline annealing system
US10607837B2 (en) * 2016-08-19 2020-03-31 Applied Materials, Inc. Gas flow control for EPI thickness uniformity improvement
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10115856B2 (en) 2016-10-31 2018-10-30 Tesla, Inc. System and method for curing conductive paste using induction heating
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
JP6773880B2 (ja) 2017-02-23 2020-10-21 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、コンピュータプログラムおよび処理容器
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US11004704B2 (en) * 2017-03-17 2021-05-11 Applied Materials, Inc. Finned rotor cover
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
USD875055S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
USD875054S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
USD842259S1 (en) 2017-04-28 2019-03-05 Applied Materials, Inc. Plasma chamber liner
USD838681S1 (en) 2017-04-28 2019-01-22 Applied Materials, Inc. Plasma chamber liner
USD837754S1 (en) 2017-04-28 2019-01-08 Applied Materials, Inc. Plasma chamber liner
USD875053S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
WO2018213621A2 (en) * 2017-05-18 2018-11-22 Applied Materials, Inc. Thermal chamber with improved thermal uniformity
CN108950519B (zh) * 2017-05-19 2021-03-02 北京北方华创微电子装备有限公司 腔室的内衬和腔室
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
KR102408720B1 (ko) * 2017-06-07 2022-06-14 삼성전자주식회사 상부 돔을 포함하는 반도체 공정 챔버
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
TWI754765B (zh) 2017-08-25 2022-02-11 美商應用材料股份有限公司 用於磊晶沉積製程之注入組件
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10636626B2 (en) * 2018-01-25 2020-04-28 Applied Materials, Inc. Dogbone inlet cone profile for remote plasma oxidation chamber
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
KR102576220B1 (ko) * 2018-06-22 2023-09-07 삼성디스플레이 주식회사 박막 처리 장치 및 박막 처리 방법
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
CN214848503U (zh) * 2018-08-29 2021-11-23 应用材料公司 注入器设备、基板处理设备及在机器可读介质中实现的结构
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
TWI833954B (zh) * 2019-05-28 2024-03-01 美商應用材料股份有限公司 用於改善處理腔室中的流動控制的設備
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
CN111455458B (zh) * 2019-09-18 2021-11-16 北京北方华创微电子装备有限公司 外延装置及应用于外延装置的进气结构
FI128855B (en) * 2019-09-24 2021-01-29 Picosun Oy FLUID DISTRIBUTOR FOR THIN FILM GROWING EQUIPMENT, RELATED EQUIPMENT AND METHODS
US12110585B2 (en) 2020-02-10 2024-10-08 Applied Materials, Inc. Process chamber and exhaust liner system therefor
CN119465090A (zh) * 2020-04-20 2025-02-18 应用材料公司 具有共用的气体输送和排气系统的多个热cvd腔室
US11881385B2 (en) * 2020-04-24 2024-01-23 Applied Materials, Inc. Methods and apparatus for reducing defects in preclean chambers
CN114916255B (zh) * 2020-12-07 2025-09-23 株式会社Tmeic 活性气体生成装置
US11499223B2 (en) 2020-12-10 2022-11-15 Applied Materials, Inc. Continuous liner for use in a processing chamber
US12188148B2 (en) 2020-12-22 2025-01-07 Applied Materials, Inc. Multi-layer EPI chamber body
CN112941626B (zh) * 2021-01-22 2022-07-22 北京北方华创微电子装备有限公司 工艺腔室的进气组件、进气装置及半导体加工设备
US12060651B2 (en) * 2021-05-11 2024-08-13 Applied Materials, Inc. Chamber architecture for epitaxial deposition and advanced epitaxial film applications
US12018372B2 (en) * 2021-05-11 2024-06-25 Applied Materials, Inc. Gas injector for epitaxy and CVD chamber
US20230097346A1 (en) * 2021-09-30 2023-03-30 Applied Materials, Inc. Flow guide apparatuses for flow uniformity control in process chambers
KR102682489B1 (ko) * 2022-02-17 2024-07-08 에스케이실트론 주식회사 라이너 및 이를 포함하는 에피텍셜 반응기
JPWO2023175826A1 (enExample) * 2022-03-17 2023-09-21
USD1069863S1 (en) 2022-08-04 2025-04-08 Applied Materials, Inc. Deposition ring of a process kit for semiconductor substrate processing
USD1064005S1 (en) * 2022-08-04 2025-02-25 Applied Materials, Inc. Grounding ring of a process kit for semiconductor substrate processing
USD1066440S1 (en) 2022-10-28 2025-03-11 Applied Materials, Inc. Process chamber pumping liner
KR102572438B1 (ko) * 2022-11-17 2023-08-30 주식회사 피제이피테크 에피택셜 성장장치 및 그에 사용되는 가스공급조절 모듈
KR102572439B1 (ko) * 2022-12-05 2023-08-30 주식회사 피제이피테크 에피택셜 성장장치 및 그에 사용되는 다층 가스공급 모듈
US20240274463A1 (en) * 2023-02-10 2024-08-15 Applied Materials, Inc. Overlapping substrate supports and pre-heat rings, and related process kits, processing chambers, methods, and components
US20240360590A1 (en) * 2023-04-27 2024-10-31 Applied Materials, Inc. Gas exhaust frames including pathways having size variations, and related apparatus and methods

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1716A (en) * 1840-08-12 Machine for beveling boot-forms
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
JPH0383897A (ja) * 1989-08-24 1991-04-09 Mitsubishi Electric Corp 気相成長装置
EP0967633A1 (en) * 1993-07-30 1999-12-29 Applied Materials, Inc. Gas inlets for wafer processing chamber
US6500734B2 (en) * 1993-07-30 2002-12-31 Applied Materials, Inc. Gas inlets for wafer processing chamber
US5916369A (en) * 1995-06-07 1999-06-29 Applied Materials, Inc. Gas inlets for wafer processing chamber
US5551982A (en) * 1994-03-31 1996-09-03 Applied Materials, Inc. Semiconductor wafer process chamber with susceptor back coating
US5597439A (en) * 1994-10-26 1997-01-28 Applied Materials, Inc. Process gas inlet and distribution passages
US6153260A (en) * 1997-04-11 2000-11-28 Applied Materials, Inc. Method for heating exhaust gas in a substrate reactor
US6022587A (en) * 1997-05-13 2000-02-08 Applied Materials, Inc. Method and apparatus for improving film deposition uniformity on a substrate
US6258170B1 (en) * 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus
US5914050A (en) * 1997-09-22 1999-06-22 Applied Materials, Inc. Purged lower liner
US6352592B1 (en) * 1998-01-16 2002-03-05 Silicon Valley Group, Thermal Systems Llc Free floating shield and semiconductor processing system
JP2000277509A (ja) * 1999-03-29 2000-10-06 Kokusai Electric Co Ltd 基板処理装置
US6489241B1 (en) * 1999-09-17 2002-12-03 Applied Materials, Inc. Apparatus and method for surface finishing a silicon film
KR20030070374A (ko) * 2002-02-25 2003-08-30 삼성전자주식회사 반도체 제조용 프로세스 챔버
US7311942B2 (en) * 2002-08-29 2007-12-25 Micron Technology, Inc. Method for binding halide-based contaminants during formation of a titanium-based film
US20040050325A1 (en) * 2002-09-12 2004-03-18 Samoilov Arkadii V. Apparatus and method for delivering process gas to a substrate processing system
JP3893615B2 (ja) * 2002-12-20 2007-03-14 信越半導体株式会社 気相成長装置およびエピタキシャルウェーハの製造方法
JP4379585B2 (ja) * 2003-12-17 2009-12-09 信越半導体株式会社 気相成長装置およびエピタキシャルウェーハの製造方法
US8236105B2 (en) * 2004-04-08 2012-08-07 Applied Materials, Inc. Apparatus for controlling gas flow in a semiconductor substrate processing chamber
US7396743B2 (en) * 2004-06-10 2008-07-08 Singh Kaushal K Low temperature epitaxial growth of silicon-containing films using UV radiation
KR100672828B1 (ko) * 2005-06-29 2007-01-22 삼성전자주식회사 챔버 인서트 및 이를 포함하는 기판 가공 장치
US7794667B2 (en) * 2005-10-19 2010-09-14 Moore Epitaxial, Inc. Gas ring and method of processing substrates
US20070113783A1 (en) * 2005-11-19 2007-05-24 Applied Materials, Inc. Band shield for substrate processing chamber
US7709391B2 (en) * 2006-01-20 2010-05-04 Applied Materials, Inc. Methods for in-situ generation of reactive etch and growth specie in film formation processes
KR200431206Y1 (ko) 2006-05-03 2006-11-23 어플라이드 머티어리얼스, 인코포레이티드 삽입부 없이 고종횡비 미세구조물을 에칭하기에 적절한상부 챔버 라이너
US20070267143A1 (en) * 2006-05-16 2007-11-22 Applied Materials, Inc. In situ cleaning of CVD system exhaust
TW200809926A (en) * 2006-05-31 2008-02-16 Sumco Techxiv Corp Apparatus and method for depositing layer on substrate
US7976634B2 (en) * 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
US20080220150A1 (en) * 2007-03-05 2008-09-11 Applied Materials, Inc. Microbatch deposition chamber with radiant heating
US8226770B2 (en) * 2007-05-04 2012-07-24 Applied Materials, Inc. Susceptor with backside area of constant emissivity
KR100906392B1 (ko) * 2007-12-13 2009-07-07 (주)트리플코어스코리아 반도체 챔버 라이너
US20090188625A1 (en) * 2008-01-28 2009-07-30 Carducci James D Etching chamber having flow equalizer and lower liner
JP5475261B2 (ja) * 2008-03-31 2014-04-16 東京エレクトロン株式会社 プラズマ処理装置
US7987814B2 (en) * 2008-04-07 2011-08-02 Applied Materials, Inc. Lower liner with integrated flow equalizer and improved conductance
TWI395272B (zh) * 2008-05-02 2013-05-01 Applied Materials Inc 用於旋轉基板之非徑向溫度控制系統
US8441640B2 (en) * 2008-05-02 2013-05-14 Applied Materials, Inc. Non-contact substrate support position sensing system and corresponding adjustments
US8147137B2 (en) * 2008-11-19 2012-04-03 Applied Materials, Inc. Pyrometry for substrate processing
JP5268766B2 (ja) * 2009-04-23 2013-08-21 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 成膜反応装置及び成膜基板製造方法
US8382939B2 (en) * 2009-07-13 2013-02-26 Applied Materials, Inc. Plasma processing chamber with enhanced gas delivery
US8840725B2 (en) * 2009-11-11 2014-09-23 Applied Materials, Inc. Chamber with uniform flow and plasma distribution
KR101884003B1 (ko) * 2011-03-22 2018-07-31 어플라이드 머티어리얼스, 인코포레이티드 화학 기상 증착 챔버를 위한 라이너 조립체
US20120258259A1 (en) * 2011-04-08 2012-10-11 Amit Bansal Apparatus and method for uv treatment, chemical treatment, and deposition
TW201325326A (zh) * 2011-10-05 2013-06-16 Applied Materials Inc 電漿處理設備及其基板支撐組件
US20140116336A1 (en) * 2012-10-26 2014-05-01 Applied Materials, Inc. Substrate process chamber exhaust
US10344380B2 (en) * 2013-02-11 2019-07-09 Globalwafers Co., Ltd. Liner assemblies for substrate processing systems
US9322097B2 (en) * 2013-03-13 2016-04-26 Applied Materials, Inc. EPI base ring
KR20160003831A (ko) * 2013-04-30 2016-01-11 어플라이드 머티어리얼스, 인코포레이티드 공간적으로 분포된 가스 통로들을 갖는 유동 제어 라이너
WO2014179014A1 (en) * 2013-05-01 2014-11-06 Applied Materials, Inc. Inject and exhaust design for epi chamber flow manipulation

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US9695508B2 (en) 2017-07-04
KR101884003B1 (ko) 2018-07-31
CN103430285A (zh) 2013-12-04
WO2012128783A1 (en) 2012-09-27
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US20120240853A1 (en) 2012-09-27
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