JP5818109B2 - (ハロ)ケイ酸塩系蛍光体及びその製造方法 - Google Patents
(ハロ)ケイ酸塩系蛍光体及びその製造方法 Download PDFInfo
- Publication number
- JP5818109B2 JP5818109B2 JP2012531998A JP2012531998A JP5818109B2 JP 5818109 B2 JP5818109 B2 JP 5818109B2 JP 2012531998 A JP2012531998 A JP 2012531998A JP 2012531998 A JP2012531998 A JP 2012531998A JP 5818109 B2 JP5818109 B2 JP 5818109B2
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- group
- halo
- silicate
- silicate phosphor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims description 91
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 title claims description 41
- 125000001475 halogen functional group Chemical group 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000000203 mixture Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000011575 calcium Substances 0.000 claims description 19
- 239000002243 precursor Substances 0.000 claims description 17
- 229910052791 calcium Inorganic materials 0.000 claims description 15
- 150000002739 metals Chemical class 0.000 claims description 15
- 239000012190 activator Substances 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052693 Europium Inorganic materials 0.000 claims description 12
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 12
- 229910052746 lanthanum Inorganic materials 0.000 claims description 12
- 229910052727 yttrium Inorganic materials 0.000 claims description 12
- 229910052733 gallium Inorganic materials 0.000 claims description 11
- 229910052749 magnesium Inorganic materials 0.000 claims description 11
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 10
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 10
- 229910052801 chlorine Inorganic materials 0.000 claims description 10
- 239000011572 manganese Substances 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 229910052712 strontium Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052794 bromium Inorganic materials 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 229910052788 barium Inorganic materials 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 230000005284 excitation Effects 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052684 Cerium Inorganic materials 0.000 claims description 5
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052772 Samarium Inorganic materials 0.000 claims description 5
- -1 ammonium halide Chemical class 0.000 claims description 5
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 5
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 5
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 4
- 150000001805 chlorine compounds Chemical class 0.000 claims description 4
- 229910052740 iodine Inorganic materials 0.000 claims description 4
- OUUQCZGPVNCOIJ-UHFFFAOYSA-M Superoxide Chemical class [O-][O] OUUQCZGPVNCOIJ-UHFFFAOYSA-M 0.000 claims description 3
- 150000004649 carbonic acid derivatives Chemical class 0.000 claims description 3
- 239000011363 dried mixture Substances 0.000 claims description 3
- 150000004679 hydroxides Chemical class 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000012153 distilled water Substances 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 238000005303 weighing Methods 0.000 claims description 2
- 239000013543 active substance Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 18
- 239000002253 acid Substances 0.000 description 13
- 150000002736 metal compounds Chemical class 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 239000000460 chlorine Substances 0.000 description 10
- 101100496858 Mus musculus Colec12 gene Proteins 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- 229910052688 Gadolinium Inorganic materials 0.000 description 7
- 229910052779 Neodymium Inorganic materials 0.000 description 7
- 238000000295 emission spectrum Methods 0.000 description 7
- 229910052736 halogen Inorganic materials 0.000 description 7
- 150000002367 halogens Chemical class 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 238000010304 firing Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 5
- 238000007792 addition Methods 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910016655 EuF 3 Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910004283 SiO 4 Inorganic materials 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- 229910016036 BaF 2 Inorganic materials 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 241001085205 Prenanthella exigua Species 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 229910001631 strontium chloride Inorganic materials 0.000 description 1
- AHBGXTDRMVNFER-UHFFFAOYSA-L strontium dichloride Chemical compound [Cl-].[Cl-].[Sr+2] AHBGXTDRMVNFER-UHFFFAOYSA-L 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
- C09K11/77922—Silicates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77342—Silicates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77344—Aluminosilicates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Luminescent Compositions (AREA)
Description
第1に、1パッケージに赤色、青色、及び緑色の発光ダイオードチップを実装し、それぞれのチップを制御して白色発光素子を製作する技術、第2に、紫外線発光ダイオードチップに赤色、青色、及び緑色の発光特性を有する蛍光体を塗布して白色発光素子を製作する技術、第3に、青色発光ダイオードチップに黄色発光特性を有する蛍光体を塗布して白色発光素子を製作する技術である。
従って、本発明は、発光輝度が向上した新規な(ハロ)ケイ酸塩系蛍光体を提供することにその目的がある。
また、本発明は、工程上、モルホロジーを改善して発光輝度が向上した新規な(ハロ)ケイ酸塩系蛍光体の製造方法を提供することに他の目的がある。
(Sr16-x-yMy)SiaObXCdN2O3:Eu2+ z (1)
(式中、MはMg、Ca、及びBaからなる群から選択された1種以上の金属であり、XはF、Cl、Br、又はIであり、NはY、La、Nd、Gd、Lu、B、Al、Ga、及びInからなる群から選択された1種以上の金属であり、0≦x≦14、0≦y≦16、0≦x+y≦16、0<z≦1、0.9<a≦6、3<b≦24、0≦c≦8、0≦d≦2である。)
本発明は、従来のケイ酸塩蛍光体の輝度向上に関して集中的に研究して、前記(ハロ)ケイ酸塩蛍光体に特定量のIII価元素を添加する場合、蛍光体の輝度が向上することを発見した。
ストロンチウム(Sr)、カルシウム(Ca)、及びバリウム(Ba)から選択された1種以上のアルカリ土金属前駆体、ケイ素(Si)前駆体とハロゲン化アンモニウムの母体成分及びユーロピウム(Eu)前駆体の活性剤成分を前記一般式(1)の蛍光体組成比となるように秤量して溶媒下で混合する1段階と、
前記1段階の混合物を100〜150℃のオーブンで乾燥する2段階と、
前記2段階の乾燥された混合物を体積比75〜95:25〜5の窒素と水素の混合ガスの雰囲気及び1000〜1350℃の温度条件下で熱処理する3段階と、を含む(ハロ)ケイ酸塩系蛍光体の製造方法に他の特徴がある。
本発明は、母体としてストロンチウム(Sr)、カルシウム(Ca)、及びバリウム(Ba)から選択された1種以上のアルカリ土金属を含有した(ハロ)ケイ酸塩にユーロピウム(Eu)を活性剤として使用する一般式(1)の(ハロ)ケイ酸塩系蛍光体に関するものである。
(式中、MはMg、Ca、及びBaからなる群から選択された1種以上の金属であり、XはF、Cl、Br、又はIであり、NはY、La、Nd、Gd、Lu、B、Al、Ga、及びInからなる群から選択された1種以上の金属であり、0≦x≦14、0≦y≦16、0≦x+y≦16、0<z≦1、0.9<a≦6、3<b≦24、0≦c≦8、0≦d≦2である。)
前記(ハロ)ケイ酸塩系蛍光体は、ユーロピウム(Eu)を活性剤として使用するが、ユーロピウム(Eu)と共にイットリウム(Y)、セリウム(Ce)、ランタン(La)、マンガン(Mn)、及びサマリウム(Sm)から選択された単一又は2種以上の金属の共活性剤をさらに使用してもよい。
本発明による(ハロ)ケイ酸塩系蛍光体の製造方法は、当分野で一般的に使用される方法であり、特に限定することはないが、例えば、ストロンチウム(Sr)、バリウム(Ba)、ガリウム(Ga)、及びケイ素(Si)前駆体とハロゲン化アンモニウムの母体成分と、ユーロピウム(Eu)前駆体の活性剤成分を前記一般式(1)の蛍光体組成比となるように秤量して溶媒下で混合する1段階、前記1段階の混合物を100〜150℃のオーブンで乾燥する2段階、及び前記2段階の乾燥された混合物を体積比75〜95:25〜5の窒素と水素の混合ガスの雰囲気及び1000〜1350℃の温度条件下で熱処理する3段階を含んで製造される。
前記前駆体を混合する方法は、当分野で一般的に用いられる方法であれば特に限定することはないが、例えば、すり鉢、湿式ボールミル又は乾式ボールミルなどの混合方法を用いることができる。また、前記前駆体の混合に用いられる溶媒は、当分野で一般的に使用されるものであれば、特に限定することはないが、例えば、蒸留水、炭素数1〜4の低級アルコール、又はアセトンなどが使用可能である。
前記(ハロ)ケイ酸塩系蛍光体の製造方法の3段階では、窒素と水素の混合ガスを用いて熱処理するが、活性剤を(ハロ)ケイ酸塩系蛍光体に置換するために還元処理する。この時、水素の体積比が5%未満であれば、前記蛍光体の還元が完全に行われないため、ケイ酸塩系の結晶が完全に生成されることがない。また、水素の体積比が25%を超えると、前記混合ガスが高温で反応して爆発の危険があるため、窒素と水素の体積比は75〜95:25〜5の範囲であることが良い。
前記方法から得られた蛍光体は、ボールミル又はジェットミルを用いて粉砕され、粉砕及び焼成は2回以上繰り返してもよい。必要であれば、結果物の蛍光体が洗浄又は分類されてもよい。又はロゲン元素の含有量は洗浄により制御されてもよい。洗浄後、ハロゲン元素の含有量の変動を招く操作を行い、変動後の含有量が上述したモル比を満足する蛍光体であれば、本発明の蛍光体であると看做す。焼成後、蛍光体内のハロゲン元素の量は洗浄操作により減少するが、その後、その量はほぼ変わることなく、安定するようになる。
本発明は、前記一般式(1)を有する(ハロ)ケイ酸塩系蛍光体を含み、半導体発光ダイオードチップ及び前記発光ダイオードチップから放出された光により励起される発光素子を提供する。より具体的には、本発明による(ハロ)ケイ酸塩系蛍光体は、優れた色の演色性、耐久性、及び高輝度が要求される発光ダイオード、レーザダイオード、面発光レーザダイオード、無機エレクトロルミネセンス素子、又は有機エレクトロルミネセンス素子のような発光素子に有効である。本発明による(ハロ)ケイ酸塩系蛍光体は単独使用が可能であるが、他の蛍光体との混合使用も可能である。また、本発明による(ハロ)ケイ酸塩系蛍光体の大きさは発光素子に使用されるために、5〜20μmの範囲が好ましい。この時、蛍光体の大きさが5μm未満であれば、輝度低下の問題が発生し、20μmを超えると、発光装置に適用しにくいという問題が発生するため、前記範囲を維持する。
以下、本発明は、次の実施例に基づいて具体的に説明するが、本発明がこれに限定されることはない。
各金属の前駆体を次の表1のような組成で混合して50mlのエタノールに入れてボールミルを用いて1時間混合した。前記混合物を100℃の乾燥器で6時間乾燥してエタノールを完全に揮発させた。溶媒が完全に乾燥された前記混合材料をアルミナるつぼに入れて1150℃で3時間熱処理した。この時、水素50cc/min及び窒素150cc/minが混合された混合ガスを供給して還元雰囲気で熱処理した後、蛍光体の粒子サイズが20μm以下となるように粉砕した。このように製造された蛍光体は450nmの励起波長を有する発光スペクトルを用いて光学的特性を評価し、下記表2に示す。
*実施例2:x=14、y=1、z=0.015、a=1、b=7、c=0、d=2
*実施例3:x=14、y=1、z=0.015、a=1、b=7、c=0、d=2
*実施例4:x=14、y=1、z=0.015、a=1、b=7、c=0、d=2
*実施例5:x=14、y=1、z=0.015、a=1、b=7、c=0、d=2
*実施例6:x=13、y=1、z=0.03、a=2、b=7、c=0、d=1
*実施例7:x=11、y=0、z=0.3、a=2、b=7、c=4、d=1
*実施例8:x=11、y=1、z=0.3、a=2、b=7、c=4、d=1
*実施例9:x=11、y=1、z=0.4、a=2、b=7、c=4、d=1
*実施例10:x=11、y=2、z=0.3、a=2、b=7、c=4、d=1
*実施例11:x=11、y=2、z=0.3、a=2、b=7、c=4、d=1
*実施例12:x=11、y=2、z=0.35、a=2、b=7、c=4、d=1
*実施例13:x=11、y=2、z=0.35、a=2、b=7、c=4、d=1
*実施例14:x=7、y=9、z=0.2、a=4、b=16、c=2、d=1
*実施例15:x=6、y=1、z=0.2、a=6、b=21、c=2、d=1
*実施例16:x=0、y=16、z=0.2、a=6、b=24、c=8、d=1
発光波長のスペクトル及び輝度はPSI社のフォトルミネセンス(Photoluminescence)装備を用いて測定した。
また、本発明による(ハロ)ケイ酸塩系蛍光体は、アルカリ土金属の種類と含量に応じて発光波長が変化可能であり、共活性剤の選択的な使用により発光波長の変化及び輝度増加の効果があり、本発明による各種発光素子に適用した時、消費電力が向上すると期待される。
図7と図8は、それぞれパッケージ型緑色発光ダイオードとトップ緑色発光ダイオードを示す。これら緑色発光ダイオードは電極と、銀(Ag)ペーストで接着固定されたLEDチップを有し、前記LEDチップは金(Au)ワイヤーにより電極に電気的に接続されている。前記LEDチップはホールカップ内に収容され、前記ホールカップは透明樹脂のエポキシ樹脂と前記実施例1による(ハロ)ケイ酸塩系蛍光体をそれぞれ重量比1:0.15、1:0.25、1:0.35になるように混合して含む。混合された蛍光体をホールカップに注入して140℃で硬化させる。このように最終製品を製造した。この時、図7に示す混合物の硬化部はリフレクター内に形成した。これによる緑色の発光スペクトルを図9に示す。
2 銀(Ag)ペースト
3 三原色蛍光物質
4 金(Au)ワイヤー
5 エポキシ
6 リードフレーム
Claims (8)
- 次の一般式(1)で表される(ハロ)ケイ酸塩系蛍光体。
(Sr16-x-yMy)SiaObXCd(N2O3):Eu2+ z (1)
(式中、MはMg、Ca、及びBaからなる群から選択された1種以上の金属であり、XはF、Cl、Br、又はIであり、NはAl、Ga、及びInからなる群から選択された1種以上の金属であり、0≦x≦14、0≦y≦16、0≦x+y≦16、0.015≦z≦0.3、1≦a≦6、4≦b≦24、0≦c≦8、0<d≦2である。
ただし、x、y、z、a、b、c及びdの値は、以下の組合せからなる群から選択される。
(1)x=14、y=1、z=0.015、a=1、b=4、c=0、d=1、
(2)x=14、y=1、z=0.015、a=1、b=7、c=0、d=2、
(3)x=13、y=1、z=0.03、a=2、b=7、c=0、d=1、
(4)x=11、y=0、z=0.3、a=2、b=7、c=4、d=1、
(5)x=11、y=1、z=0.3、a=2、b=7、c=4、d=1、
(6)x=11、y=2、z=0.3、a=2、b=7、c=4、d=1、
(7)x=7、y=9、z=0.2、a=4、b=16、c=2、d=1、
(8)x=6、y=1、z=0.2、a=6、b=21、c=2、d=1、及び
(9)x=0、y=16、z=0.2、a=6、b=24、c=8、d=1) - 前記(ハロ)ケイ酸塩系蛍光体は、ユーロピウム(Eu)と共にイットリウム(Y)、セリウム(Ce)、ランタン(La)、マンガン(Mn)、及びサマリウム(Sm)からなる群から選択された単一又は2種以上の共活性剤をさらに使用することを特徴とする請求項1に記載の蛍光体。
- 前記(ハロ)ケイ酸塩系蛍光体は、350〜500nmの励起波長で510〜555nmの発光波長を有することを特徴とする請求項1に記載の蛍光体。
- 前記(ハロ)ケイ酸塩系蛍光体の大きさは5〜20μmであることを特徴とする請求項1に記載の蛍光体。
- ストロンチウム(Sr)、カルシウム(Ca)及びバリウム(Ba)からなる群から選択される1種以上のアルカリ土金属前駆体、ケイ素(Si)前駆体及びハロゲン化アンモニウムの母体成分及びユーロピウム(Eu)前駆体の活性剤成分を次の一般式(1)の蛍光体組成比となるように秤量して溶媒下で混合する1段階と、
前記1段階の混合物を100〜150℃のオーブンで乾燥する2段階と、
前記2段階の乾燥された混合物を体積比75〜95:25〜5の窒素と水素の混合ガスの雰囲気及び1000〜1350℃の温度条件下で熱処理する3段階と、
を含むことを特徴とする(ハロ)ケイ酸塩系蛍光体の製造方法。
(Sr16-x-yMy)SiaObXCd(N2O3):Eu2+ z (1)
(式中、MはMg、Ca、及びBaからなる群から選択された1種以上の金属であり、XはF、Cl、Br、又はIであり、NはAl、Ga、及びInからなる群から選択された1種以上の金属であり、0≦x≦14、0≦y≦16、0≦x+y≦16、0.015≦z≦0.3、1≦a≦6、4≦b≦24、0≦c≦8、0<d≦2である。
ただし、x、y、z、a、b、c及びdの値は、以下の組合せからなる群から選択される。
(1)x=14、y=1、z=0.015、a=1、b=4、c=0、d=1、
(2)x=14、y=1、z=0.015、a=1、b=7、c=0、d=2、
(3)x=13、y=1、z=0.03、a=2、b=7、c=0、d=1、
(4)x=11、y=0、z=0.3、a=2、b=7、c=4、d=1、
(5)x=11、y=1、z=0.3、a=2、b=7、c=4、d=1、
(6)x=11、y=2、z=0.3、a=2、b=7、c=4、d=1、
(7)x=7、y=9、z=0.2、a=4、b=16、c=2、d=1、
(8)x=6、y=1、z=0.2、a=6、b=21、c=2、d=1、及び
(9)x=0、y=16、z=0.2、a=6、b=24、c=8、d=1) - 前記前駆体は、金属の酸化物、塩化物、水酸化物、窒酸化物、炭酸化物、及び超酸化物からなる群から選択された単一又は2種以上の混合物であることを特徴とする請求項5に記載の製造方法。
- 前記活性剤以外に、共活性剤としてイットリウム(Y)、セリウム(Ce)、ランタン(La)、マンガン(Mn)、及びサマリウム(Sm)からなる群から選択された単一又は2種以上の金属の前駆体をさらに使用することを特徴とする請求項5に記載の製造方法。
- 前記溶媒は、蒸留水、炭素数1〜4の低級アルコール又はアセトンであることを特徴とする請求項5に記載の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090092547A KR101098006B1 (ko) | 2009-09-29 | 2009-09-29 | (할로)실리케이트계 형광체 및 이의 제조방법 |
KR10-2009-0092547 | 2009-09-29 | ||
PCT/KR2010/006001 WO2011040709A2 (ko) | 2009-09-29 | 2010-09-03 | (할로)실리케이트계 형광체 및 이의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013506043A JP2013506043A (ja) | 2013-02-21 |
JP5818109B2 true JP5818109B2 (ja) | 2015-11-18 |
Family
ID=43826752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012531998A Expired - Fee Related JP5818109B2 (ja) | 2009-09-29 | 2010-09-03 | (ハロ)ケイ酸塩系蛍光体及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8865023B2 (ja) |
JP (1) | JP5818109B2 (ja) |
KR (1) | KR101098006B1 (ja) |
CN (1) | CN102686702B (ja) |
WO (1) | WO2011040709A2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103370394B (zh) * | 2011-02-14 | 2015-03-04 | 株式会社小糸制作所 | 荧光体的制造方法 |
WO2012118310A2 (ko) * | 2011-02-28 | 2012-09-07 | 성균관대학교산학협력단 | 형광체, 및 이의 제조 방법 |
KR101337998B1 (ko) * | 2011-06-01 | 2013-12-06 | 한국화학연구원 | 실리케이트 형광체 및 이를 포함하는 백색 발광 소자 |
TWI432555B (zh) * | 2011-08-12 | 2014-04-01 | Unity Opto Technology Co Ltd | 鋁酸鹽類化合物螢光粉 |
KR102007373B1 (ko) * | 2012-07-03 | 2019-08-06 | 삼성디스플레이 주식회사 | 나노 형광체 제조 방법, 발광 다이오드 및 발광 다이오드 제조 방법 |
WO2015037715A1 (ja) * | 2013-09-13 | 2015-03-19 | 宇部マテリアルズ株式会社 | ケイ酸塩蛍光体の製造方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3790490A (en) * | 1971-03-03 | 1974-02-05 | Gen Electric | Europium and manganese activated strontium chlorosilicate phosphor |
JPS56155280A (en) * | 1980-04-11 | 1981-12-01 | Toshiba Corp | Bluish green-luminescent fluorescent substance |
WO1998042798A1 (fr) * | 1997-03-26 | 1998-10-01 | Zhiguo Xiao | Luminophore de silicate a luminescence remanente et procede de fabrication de ce dernier |
CN1062581C (zh) * | 1997-03-26 | 2001-02-28 | 肖志国 | 硅酸盐长余辉发光材料及其制造方法 |
JP3609709B2 (ja) | 2000-09-29 | 2005-01-12 | 株式会社シチズン電子 | 発光ダイオード |
KR100511562B1 (ko) * | 2003-01-29 | 2005-09-02 | 한국화학연구원 | 백색 발광 다이오드 및 능동 발광형 액정 디스플레이에 적용되는 스트론튬실리케이트계 황색 형광체와 이의 제조방법 |
CN100412156C (zh) * | 2003-03-28 | 2008-08-20 | 韩国化学研究所 | 硅酸锶基磷光体、其制造方法和使用该磷光体的led |
KR20050031343A (ko) | 2003-09-29 | 2005-04-06 | (주) 리드제넥스 | 신규한 신·의약 중간체 및 제조방법 |
KR100605211B1 (ko) * | 2004-04-07 | 2006-07-31 | 엘지이노텍 주식회사 | 형광체 및 이를 이용한 백색 발광다이오드 |
KR100628884B1 (ko) | 2004-08-13 | 2006-09-26 | 주식회사 티씨오 | 백색 발광다이오드 및 그 제조방법 |
KR20060034055A (ko) * | 2004-10-18 | 2006-04-21 | 엘지이노텍 주식회사 | 형광체 및 이를 이용한 발광소자 |
JP2007231250A (ja) * | 2006-02-02 | 2007-09-13 | Nichia Chem Ind Ltd | 蛍光体及びそれを用いた発光装置 |
JP4399624B2 (ja) * | 2006-02-10 | 2010-01-20 | 独立行政法人産業技術総合研究所 | メカノルミネッセンス材料 |
CN100590173C (zh) * | 2006-03-24 | 2010-02-17 | 北京有色金属研究总院 | 一种荧光粉及其制造方法和所制成的电光源 |
US7780871B2 (en) * | 2006-04-26 | 2010-08-24 | Wei-Hung Lo | Inorganic light-emitting materials for UV solid light source |
EP2084242A4 (en) | 2006-10-03 | 2009-12-16 | Sarnoff Corp | METAL SILICATE HALIDE PHOSPHORES AND LED LIGHTING DEVICES USING THE SAME |
US7648650B2 (en) * | 2006-11-10 | 2010-01-19 | Intematix Corporation | Aluminum-silicate based orange-red phosphors with mixed divalent and trivalent cations |
JP5222600B2 (ja) * | 2007-04-05 | 2013-06-26 | 株式会社小糸製作所 | 蛍光体 |
JP5360857B2 (ja) * | 2007-05-17 | 2013-12-04 | Necライティング株式会社 | 緑色発光蛍光体、その製造方法及びそれを用いた発光素子 |
RU2423756C1 (ru) * | 2007-08-30 | 2011-07-10 | Нития Корпорейшн | Светоизлучающее устройство |
-
2009
- 2009-09-29 KR KR1020090092547A patent/KR101098006B1/ko not_active IP Right Cessation
-
2010
- 2010-09-03 JP JP2012531998A patent/JP5818109B2/ja not_active Expired - Fee Related
- 2010-09-03 US US13/499,129 patent/US8865023B2/en not_active Expired - Fee Related
- 2010-09-03 CN CN201080051556.3A patent/CN102686702B/zh not_active Expired - Fee Related
- 2010-09-03 WO PCT/KR2010/006001 patent/WO2011040709A2/ko active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2011040709A3 (ko) | 2011-07-21 |
CN102686702B (zh) | 2014-12-03 |
CN102686702A (zh) | 2012-09-19 |
WO2011040709A2 (ko) | 2011-04-07 |
KR101098006B1 (ko) | 2011-12-23 |
US20120187338A1 (en) | 2012-07-26 |
JP2013506043A (ja) | 2013-02-21 |
KR20110035011A (ko) | 2011-04-06 |
US8865023B2 (en) | 2014-10-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100574546B1 (ko) | 스트론튬실리케이트계 형광체, 그 제조방법 및 이를이용한 발광다이오드 | |
JP4617323B2 (ja) | 新しい組成の黄色発光Ce3+賦活シリケート系黄色蛍光体、その製造方法及び前記蛍光体を包含する白色発光ダイオード | |
JP5139300B2 (ja) | 紫外線および長波長励起用ケイ酸塩系蛍光体とその製造方法 | |
JP4799549B2 (ja) | 白色発光ダイオード | |
KR101172143B1 (ko) | 백색 발광다이오드 소자용 시온계 산화질화물 형광체, 그의 제조방법 및 그를 이용한 백색 led 소자 | |
JP2007510040A (ja) | スペクトル特性が向上したガーネット蛍光体材料 | |
JP5818109B2 (ja) | (ハロ)ケイ酸塩系蛍光体及びその製造方法 | |
JP2015113358A (ja) | 蛍光体、蛍光体含有組成物、発光装置、照明装置、画像表示装置、及び蛍光体の製造方法 | |
JP2006511697A (ja) | ストロンチウムシリケート系蛍光体及びその製造方法 | |
JP2010270196A (ja) | 蛍光体及び蛍光体の製造方法、並びに、蛍光体含有組成物、発光装置、照明装置、画像表示装置及び蛍光塗料 | |
JP5361736B2 (ja) | 蛍光体、コーティング蛍光体組成物、蛍光体の製造方法及び発光素子 | |
KR100697822B1 (ko) | Uv led용 스트론튬마그네슘실리케이트계 청색 형광체 및 이의 제조방법 | |
KR101196845B1 (ko) | (할로)금속실리콘산질화물 형광체 및 이의 제조방법 | |
KR100802873B1 (ko) | 등색 발광 형광체 | |
JP2014001286A (ja) | 蛍光体とその製造方法、及びそれを用いた発光装置 | |
KR101114190B1 (ko) | 산화질화물계 형광체, 그의 제조방법 및 발광 장치 | |
KR101103999B1 (ko) | 산화질화물계 형광체, 그의 제조방법 및 발광 장치 | |
KR100780484B1 (ko) | 청색광 여기용 루테늄-리튬계 가넷 형광체와 이를 이용한백색발광다이오드 | |
KR101047775B1 (ko) | 형광체 및 발광소자 | |
JP2015183084A (ja) | 紫光励起用蛍光体、該蛍光体を用いた蛍光体含有組成物及び発光装置、並びに、該発光装置を用いた照明装置及び画像表示装置 | |
KR100668796B1 (ko) | 훈타이트계 형광체 및 이를 이용한 백색 발광 장치 | |
KR100902415B1 (ko) | 할로실리케이트계 형광체 및 이의 제조방법 | |
KR100571882B1 (ko) | 황색 형광체 및 이를 포함하는 백색 발광 장치 | |
KR101790541B1 (ko) | 주석(Sn) 또는 비스무트(Bi)가 도핑 된 금속질화물 적색 형광체 및 이를 이용한 발광소자 | |
KR101014076B1 (ko) | 형광체, 발광소자 및 형광체 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130507 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130703 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20131002 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20131009 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20131105 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20131112 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131203 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140820 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141218 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150204 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20150210 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150413 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150709 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150812 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150902 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150916 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5818109 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |