JP5806097B2 - 蓄電装置 - Google Patents
蓄電装置 Download PDFInfo
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- JP5806097B2 JP5806097B2 JP2011263396A JP2011263396A JP5806097B2 JP 5806097 B2 JP5806097 B2 JP 5806097B2 JP 2011263396 A JP2011263396 A JP 2011263396A JP 2011263396 A JP2011263396 A JP 2011263396A JP 5806097 B2 JP5806097 B2 JP 5806097B2
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- 230000002040 relaxant effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 159000000008 strontium salts Chemical class 0.000 description 1
- 229920005608 sulfonated EPDM Polymers 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 229920002725 thermoplastic elastomer Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
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- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
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- H01G11/06—Hybrid capacitors with one of the electrodes allowing ions to be reversibly doped thereinto, e.g. lithium ion capacitors [LIC]
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- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
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- H01M10/056—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes
- H01M10/0561—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes the electrolyte being constituted of inorganic materials only
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- H01M4/36—Selection of substances as active materials, active masses, active liquids
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- H01M4/386—Silicon or alloys based on silicon
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- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M2004/026—Electrodes composed of, or comprising, active material characterised by the polarity
- H01M2004/027—Negative electrodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
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Description
本実施の形態では、本発明の一態様である蓄電装置の電極およびその作製方法について、図1および図2を用いて説明する。
本実施の形態では、本発明の一態様である蓄電装置の電極およびその作製方法について、図3および図4を用いて説明する。
本実施の形態では、本発明の一態様である蓄電装置の電極およびその作製方法について、以下に説明する。
本実施の形態では、蓄電装置の構造について、図5を用いて説明する。
本実施の形態では、実施の形態4で説明した蓄電装置の応用形態について図6を用いて説明する。
本実施の形態では、本発明の一態様に係る蓄電装置の一例である二次電池を、無線給電システム(以下、RF給電システムと呼ぶ。)に用いた場合の一例を、図7および図8のブロック図を用いて説明する。なお、各ブロック図では、受電装置および給電装置内の構成要素を機能ごとに分類し、互いに独立したブロックとして示しているが、実際の構成要素は機能ごとに完全に切り分けることが困難であり、一つの構成要素が複数の機能に係わることもあり得る。
まず、二次電池の電極の作製工程を説明する。
次に、本実施例の二次電池の作製工程を示す。
次に、比較二次電池の電極の作製工程を説明する。本発明の一態様である二次電池と比較二次電池とは、活物質層の作製工程が異なる。それ以外の構成は共通しているため、基板、集電体等の構成は省略する。
次に、比較二次電池の作製工程を示す。
上記のようにして作製した二次電池および比較二次電池について、充放電測定機を用いて電池特性の比較を行った。充放電の測定には定電流方式を採用し、初回充電のみ0.05mAで、その後の充電からは0.15mAの電流で充放電し、上限電圧を1.0V、下限電圧を0.03Vとして行った。容量制限を2000(mAh/g)とし、また、測定は室温で行った。その結果を表1および図10に示す。
103 活物質層
109 ニオブを含む層
151 蓄電装置
153 外装部材
155 蓄電セル
157 端子部
159 端子部
163 負極
165 正極
167 セパレータ
169 電解質
171 負極集電体
173 負極活物質層
175 正極集電体
177 正極活物質層
179 ニオブを含む層
201 集電体
203 活物質層
203a 結晶性シリコン領域
203b 結晶性シリコン領域
204 電極
206 筐体
209 ニオブを含む層
210 セパレータ
220 リング状絶縁体
232 参照電極
240 スペーサー
242 ワッシャー
244 筐体
300 自動車
302 蓄電装置
600 受電装置
601 受電装置部
602 受電装置用アンテナ回路
603 信号処理回路
604 二次電池
605 整流回路
606 変調回路
607 電源回路
610 電源負荷部
700 給電装置
701 給電装置用アンテナ回路
702 信号処理回路
703 整流回路
704 変調回路
705 復調回路
706 発振回路
1301 モーターボート
1302 蓄電装置
1311 電動車椅子
1312 蓄電装置
Claims (3)
- 集電体と、
前記集電体上の、リチウムと合金化する材料からなる活物質層と、
前記活物質層上の、ニオブを含む層と、を有する電極を用いた蓄電装置であって、
前記活物質層は、結晶性シリコンからなり、
前記活物質層は、第1の領域と、前記第1の領域上の、第2の領域とを有し、
前記第2の領域は、複数の突起を有し、
前記複数の突起は、第1の突起と、第2の突起とを有し、
前記第1の突起は、前記第2の突起より高く、
前記第1の突起の頂部は、前記第2の突起と重なる方向へ、湾曲し、
前記ニオブを含む層は、前記第1の突起及び前記第2の突起を覆い、かつ前記第1の領域と、前記第2の領域との界面に接するように設けられていることを特徴とする蓄電装置。 - 請求項1において、前記ニオブを含む層は、酸化ニオブまたは窒化ニオブで形成されることを特徴とする蓄電装置。
- 集電体と、
前記集電体上の、リチウムと合金化する材料で形成される活物質層と、
前記活物質層上の、ニオブを含む層と、を有する負極と、
前記負極と接して形成される電解質と、
前記電解質を介して、前記負極と対向する正極と、を有する蓄電装置であって、
前記活物質層は、結晶性シリコンからなり、
前記活物質層は、第1の領域と、前記第1の領域上の、第2の領域とを有し、
前記第2の領域は、複数の突起を有し、
前記複数の突起は、第1の突起と、第2の突起とを有し、
前記第1の突起は、前記第2の突起より高く、
前記第1の突起の頂部は、前記第2の突起と重なる方向へ、湾曲し、
前記ニオブを含む層は、前記第1の突起及び前記第2の突起を覆い、かつ前記第1の領域と、前記第2の領域との界面に接するように設けられていることを特徴とする蓄電装置。
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JP6035013B2 (ja) | 2011-08-30 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 電極の作製方法 |
JP6204004B2 (ja) | 2011-08-31 | 2017-09-27 | 株式会社半導体エネルギー研究所 | 二次電池の作製方法 |
JP2013054878A (ja) | 2011-09-02 | 2013-03-21 | Semiconductor Energy Lab Co Ltd | 電極の作製方法および蓄電装置 |
US9384904B2 (en) | 2012-04-06 | 2016-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for power storage device, method for forming the same, and power storage device |
JP6216154B2 (ja) | 2012-06-01 | 2017-10-18 | 株式会社半導体エネルギー研究所 | 蓄電装置用負極及び蓄電装置 |
US9806334B2 (en) | 2012-11-02 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device electrode, method for forming the same, power storage device, and electrical device |
CN104781954B (zh) | 2012-11-07 | 2017-08-08 | 株式会社半导体能源研究所 | 蓄电装置用电极、蓄电装置以及蓄电装置用电极的制造方法 |
WO2014171337A1 (en) | 2013-04-19 | 2014-10-23 | Semiconductor Energy Laboratory Co., Ltd. | Secondary battery and a method for fabricating the same |
US20150132649A1 (en) | 2013-11-13 | 2015-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for power storage device, power storage device, and electrical device |
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US20120141866A1 (en) | 2012-06-07 |
US20160268598A1 (en) | 2016-09-15 |
KR101884040B1 (ko) | 2018-07-31 |
CN103238240B (zh) | 2016-05-18 |
CN103238240A (zh) | 2013-08-07 |
US10128498B2 (en) | 2018-11-13 |
US9362556B2 (en) | 2016-06-07 |
TWI521780B (zh) | 2016-02-11 |
WO2012077692A1 (en) | 2012-06-14 |
KR20130124337A (ko) | 2013-11-13 |
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